JP2015191914A5 - - Google Patents

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JP2015191914A5
JP2015191914A5 JP2014065846A JP2014065846A JP2015191914A5 JP 2015191914 A5 JP2015191914 A5 JP 2015191914A5 JP 2014065846 A JP2014065846 A JP 2014065846A JP 2014065846 A JP2014065846 A JP 2014065846A JP 2015191914 A5 JP2015191914 A5 JP 2015191914A5
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Prior art keywords
semiconductor substrate
mask
main surface
spacer member
fixing
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JP2014065846A
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Japanese (ja)
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JP6338416B2 (en
JP2015191914A (en
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Claims (8)

第１主面を有する半導体基板の外周領域にスペーサ部材を配置する工程と、
前記スペーサ部材を間に挟んで、前記第１主面の上方に配置されるマスクと前記半導体基板とを固定する工程と、
前記マスクの上から前記半導体基板に向けてイオンを照射する工程と、
を備えるイオン照射方法。 Disposing a spacer member in the outer peripheral region of the semiconductor substrate having the first main surface;
Fixing the mask disposed above the first main surface and the semiconductor substrate with the spacer member interposed therebetween;
Irradiating ions from above the mask toward the semiconductor substrate;
An ion irradiation method comprising: 前記マスクと前記半導体基板とを固定する工程は、前記マスクと前記半導体基板を挟み込んで固定するクリップを取り付ける工程を含む、請求項１に記載のイオン照射方法。   The ion irradiation method according to claim 1, wherein the step of fixing the mask and the semiconductor substrate includes a step of attaching a clip that sandwiches and fixes the mask and the semiconductor substrate. 前記スペーサ部材を配置する工程は、前記半導体基板を収容可能な凹部を有するウェハホルダの下側スペーサ部材の上に前記半導体基板を配置し、前記半導体基板の上に上側スペーサ部材を配置する工程を含み、
前記マスクと前記半導体基板とを固定する工程は、前記半導体基板を収容するウェハホルダと前記マスクとを固定する工程を含む、請求項１または２に記載のイオン照射方法。 The step of disposing the spacer member includes the step of disposing the semiconductor substrate on a lower spacer member of a wafer holder having a recess capable of accommodating the semiconductor substrate, and disposing the upper spacer member on the semiconductor substrate. ,
The ion irradiation method according to claim 1, wherein the step of fixing the mask and the semiconductor substrate includes a step of fixing a wafer holder that accommodates the semiconductor substrate and the mask. 前記スペーサ部材を配置する工程は、前記第１主面および前記第１主面に背向する前記半導体基板の第２主面の外周領域と、前記半導体基板の側面と、を取り囲むフレームを前記半導体基板に固定する工程を含む、請求項１または２に記載のイオン照射方法。   The step of disposing the spacer member includes forming a frame surrounding the first main surface and an outer peripheral region of the second main surface of the semiconductor substrate facing away from the first main surface and a side surface of the semiconductor substrate. The ion irradiation method according to claim 1, comprising a step of fixing to a substrate. 前記マスクと前記半導体基板とを固定する工程は、前記フレームを前記半導体基板に固定した後に、前記マスクが有するアライメント開口および前記第１主面に設けられるアライメントマークを用いて前記マスクを前記第１主面に対して位置合わせする工程を含む、請求項４に記載のイオン照射方法。   The step of fixing the mask and the semiconductor substrate includes fixing the frame to the first substrate using an alignment opening provided in the mask and an alignment mark provided on the first main surface after the frame is fixed to the semiconductor substrate. The ion irradiation method of Claim 4 including the process of aligning with respect to a main surface. 半導体基板の主面上に配置されたマスクを介してイオン照射をする際に前記マスクを前記半導体基板に固定するための固定装置であって、
前記半導体基板の外周領域に設けられるスペーサ部材と、
前記半導体基板、前記スペーサ部材および前記マスクを挟み込んで固定するクリップと、
を備える固定装置。 A fixing device for fixing the mask to the semiconductor substrate when ion irradiation is performed through a mask disposed on a main surface of the semiconductor substrate,
A spacer member provided in an outer peripheral region of the semiconductor substrate;
A clip that sandwiches and fixes the semiconductor substrate, the spacer member, and the mask;
A fixing device comprising: 前記固定装置は、
前記半導体基板を収容可能な凹部を有するウェハホルダをさらに備え、
前記スペーサ部材は、前記半導体基板の外径に対応したリング形状を有し、前記ウェハホルダと前記半導体基板の間に配置される下側スペーサ部材と、前記半導体基板と前記マスクの間に配置される上側スペーサ部材と、を含み、
前記クリップは、前記凹部に前記半導体基板が収容された前記ウェハホルダと、前記凹部の上方に配置される前記マスクと、を固定する請求項６に記載の固定装置。 The fixing device is
A wafer holder having a recess capable of accommodating the semiconductor substrate;
The spacer member has a ring shape corresponding to the outer diameter of the semiconductor substrate, and is disposed between the wafer holder and the semiconductor substrate, and between the semiconductor substrate and the mask. An upper spacer member,
The fixing device according to claim 6, wherein the clip fixes the wafer holder in which the semiconductor substrate is accommodated in the concave portion and the mask disposed above the concave portion. 前記固定装置は、前記半導体基板の第１主面および第２主面の外周領域と、前記半導体基板の側面と、を取り囲むようにして前記半導体基板に固定されるフレームを備え、
前記スペーサ部材は、前記フレームの少なくとも一部分を構成し、
前記クリップは、前記半導体基板に固定されたフレームと、前記第１主面の上方に配置される前記マスクと、を固定する請求項６に記載の固定装置。 The fixing device includes a frame fixed to the semiconductor substrate so as to surround an outer peripheral region of the first main surface and the second main surface of the semiconductor substrate and a side surface of the semiconductor substrate,
The spacer member constitutes at least a portion of the frame;
The fixing device according to claim 6, wherein the clip fixes a frame fixed to the semiconductor substrate and the mask disposed above the first main surface.
JP2014065846A 2014-03-27 2014-03-27 Ion irradiation method and fixing device used for ion irradiation Active JP6338416B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014065846A JP6338416B2 (en) 2014-03-27 2014-03-27 Ion irradiation method and fixing device used for ion irradiation

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Application Number Priority Date Filing Date Title
JP2014065846A JP6338416B2 (en) 2014-03-27 2014-03-27 Ion irradiation method and fixing device used for ion irradiation

Publications (3)

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JP2015191914A JP2015191914A (en) 2015-11-02
JP2015191914A5 true JP2015191914A5 (en) 2017-03-30
JP6338416B2 JP6338416B2 (en) 2018-06-06

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Publication number Priority date Publication date Assignee Title
JP6732645B2 (en) * 2016-12-07 2020-07-29 住重アテックス株式会社 Fixing device and ion irradiation method
JP6914600B2 (en) * 2017-10-24 2021-08-04 住重アテックス株式会社 Fixing device and ion irradiation method

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JP2002110637A (en) * 2000-09-26 2002-04-12 Applied Materials Inc Mask member, mask member set, substrate treatment method, manufacturing method, of semiconductor device and the method for deciding manufacturing conditions of the semiconductor device
US7820460B2 (en) * 2007-09-07 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Patterned assembly for manufacturing a solar cell and a method thereof
JP2010186820A (en) * 2009-02-10 2010-08-26 Toyota Motor Corp Method of manufacturing semiconductor device
CN102396056B (en) * 2009-12-15 2014-03-12 丰田自动车株式会社 Method for manufacturing semiconductor device
JP5510070B2 (en) * 2010-05-26 2014-06-04 トヨタ自動車株式会社 Manufacturing method of semiconductor device
JP5892802B2 (en) * 2012-02-09 2016-03-23 住友重機械工業株式会社 Ion implantation method, transfer container, and ion implantation apparatus

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