JP2017094417A - Working device - Google Patents

Working device Download PDF

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Publication number
JP2017094417A
JP2017094417A JP2015227017A JP2015227017A JP2017094417A JP 2017094417 A JP2017094417 A JP 2017094417A JP 2015227017 A JP2015227017 A JP 2015227017A JP 2015227017 A JP2015227017 A JP 2015227017A JP 2017094417 A JP2017094417 A JP 2017094417A
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liquid
flow path
flow rate
supply
detection
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純 諏訪野
Jun Suwano
純 諏訪野
杉山　聡
Satoshi Sugiyama
聡 杉山
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2015227017A priority Critical patent/JP2017094417A/en
Priority to TW105132907A priority patent/TW201718180A/en
Priority to CN201611035278.8A priority patent/CN107017185A/en
Priority to KR1020160151789A priority patent/KR20170058861A/en
Publication of JP2017094417A publication Critical patent/JP2017094417A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Measuring Volume Flow (AREA)
  • Auxiliary Devices For Machine Tools (AREA)
  • Machine Tool Sensing Apparatuses (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a working device capable of confirming that liquid is supplied at a lower flow rate, at a low cost.SOLUTION: A working device (2) comprises: supply nozzles (40a, 42a, 46a and 48a) which supply liquid (31) to a work-piece (11); a supply passage (50) including a first passage (50a) and a second passage (50b); a flow-rate adjustment valve (54) that adjusts a flow rate of the liquid to be supplied; detection means (52) which is provided between the first passage and the second passage and detects a flow of the liquid; and determination means (58) that determines whether or not the liquid of a prescribed flow rate flows in the supply passage, on the basis of a detected result by the detection means. The detection means includes: a detection pipe portion (72) to the upper part of which a downstream end of the first passage is connected and to the lower part of which an upstream end of the second passage is connected, and whose inner diameter is larger than the downstream end of the first passage and the upstream end of the second passage; and a detection portion (74) which is constituted of a light emitting portion (74a) and a light receiving portion (74b), and detects liquid dropping down in the detection pipe portion.SELECTED DRAWING: Figure 1

Description

本発明は、板状の被加工物を加工する加工装置に関する。   The present invention relates to a processing apparatus for processing a plate-shaped workpiece.

半導体ウェーハに代表される板状の被加工物を加工する際には、例えば、切削装置、研削装置、研磨装置等の加工装置が使用される（例えば、特許文献１，２参照）。これらの加工装置では、被加工物の冷却、加工の促進、加工屑の排出等を目的として、被加工物に液体を供給しながら加工を遂行する。   When processing a plate-like workpiece typified by a semiconductor wafer, for example, a processing device such as a cutting device, a grinding device, or a polishing device is used (see, for example, Patent Documents 1 and 2). In these processing apparatuses, processing is performed while supplying a liquid to the workpiece for the purpose of cooling the workpiece, accelerating the processing, discharging the processing waste, and the like.

上述した加工装置を用いて被加工物を加工する際には、ある程度の大きな流量（例えば、１Ｌ／ｍｉｎ以上）で液体を供給することが多い。一方で、今後は、小さな流量（例えば、０．１Ｌ／ｍｉｎ以下）で液体を供給しながら被加工物を加工する機会も増えると考えられる。   When a workpiece is processed using the above-described processing apparatus, a liquid is often supplied at a certain large flow rate (for example, 1 L / min or more). On the other hand, in the future, it is considered that opportunities to process a workpiece while supplying a liquid at a small flow rate (for example, 0.1 L / min or less) will increase.

特開２０１２−１０６２９３号公報JP 2012-106293 A 特開２０１５−１２３５６８号公報Japanese Patent Laying-Open No. 2015-123568

しかしながら、これまでの加工装置に用いられてきた浮き子式の流量計では、小さな流量を測定できず、供給される液体の流量が適切であるか否かを判定できなかった。コリオリ式の流量計のように小さな流量を測定可能な流量計を用いる方法も考えられるが、その場合には、加工装置のコストが高くなってしまうという問題がある。   However, the float type flow meter used in the conventional processing apparatus cannot measure a small flow rate and cannot determine whether or not the flow rate of the supplied liquid is appropriate. A method using a flow meter capable of measuring a small flow rate such as a Coriolis type flow meter is also conceivable, but in that case, there is a problem that the cost of the processing apparatus increases.

本発明はかかる問題点に鑑みてなされたものであり、その目的とするところは、小さな流量で液体が供給されていることを低いコストで確認できる加工装置を提供することである。   The present invention has been made in view of such problems, and an object of the present invention is to provide a processing apparatus capable of confirming that liquid is supplied at a low flow rate at a low cost.

本発明の一態様によれば、チャックテーブルで保持した被加工物に液体を供給しつつ加工する加工手段を備える加工装置であって、被加工物に液体を供給する供給ノズルと、液体の供給源に接続する第１流路、及び該供給ノズルに接続する第２流路を含む供給流路と、該供給源から供給される液体の流量を調整する流量調整弁と、該第１流路と該第２流路との間に設けられ、液体の流れを検出する検出手段と、該検出手段の検出結果に基づいて、該供給流路に所定の流量の液体が流れているか否かを判定する判定手段と、を備え、該検出手段は、上部に該第１流路の下流端が接続すると共に、下部に該第２流路の上流端が接続し、該第１流路の下流端及び該第２流路の上流端よりも内径が大きい検出管部と、発光部及び受光部からなり、該第１流路から流れ出て該検出管部内で連続的又は断続的に落下する液体を検出する検出部と、を有し、該判定手段は、単位時間あたりの該受光部の受光量が所定の範囲内である場合に、該所定の流量の液体が流れていると判定することを特徴とする加工装置が提供される。   According to one aspect of the present invention, there is provided a processing apparatus including processing means for processing while supplying a liquid to a workpiece held by a chuck table, the supply nozzle supplying a liquid to the workpiece, and supplying the liquid A supply channel including a first channel connected to the source and a second channel connected to the supply nozzle, a flow rate adjusting valve for adjusting a flow rate of the liquid supplied from the supply source, and the first channel And a second detecting means for detecting the flow of the liquid, and based on the detection result of the detecting means, whether or not a predetermined flow rate of liquid is flowing in the supply flow path. A determination means for determining, wherein the detection means has a downstream end of the first flow path connected to the upper part and an upstream end of the second flow path connected to the lower part, and is downstream of the first flow path. A detection tube portion having an inner diameter larger than that of the end and the upstream end of the second flow path, and a light emitting portion and a light receiving portion, A detection unit that detects liquid flowing out of the flow path and falling continuously or intermittently in the detection tube unit, and the determination means includes a light reception amount of the light reception unit within a predetermined range per unit time In this case, it is determined that the liquid having the predetermined flow rate is flowing.

本発明の一態様において、該受光部の受光量が該所定の範囲よりも多い場合、該供給流路に該所定の流量よりも小さな流量の液体が流れている、又は該供給流路に液体が流れていないと判定することが好ましい。   In one embodiment of the present invention, when the amount of light received by the light receiving unit is larger than the predetermined range, a liquid having a flow rate smaller than the predetermined flow rate flows in the supply flow channel, or the liquid flows in the supply flow channel. It is preferable to determine that is not flowing.

また、本発明の一態様において、該受光部の受光量が該所定の範囲よりも少ない場合、該供給流路に該所定の流量よりも大きな流量の液体が流れている、又は該供給流路に液体が流れていないと判定することが好ましい。   In one embodiment of the present invention, when the amount of light received by the light receiving unit is smaller than the predetermined range, a liquid having a flow rate larger than the predetermined flow rate flows in the supply flow channel, or the supply flow channel. It is preferable to determine that no liquid is flowing.

本発明の一態様に係る加工装置では、第１流路の下流端及び第２流路の上流端よりも内径が大きい検出管部と、発光部及び受光部からなり、第１流路から流れ出て検出管部内で連続的又は断続的に落下する液体を検出する検出部と、で構成されるシンプルな検出手段を用い、単位時間あたりの受光部の受光量が所定の範囲内である場合に、所定の流量の液体が流れていると判定するので、小さな流量で液体が供給されていることを低いコストで確認できる。また、この検出手段には、可動部分が存在しないので、本発明の一態様に係る加工装置は、可動部分のある流量計を備えた加工装置に比べて故障し難い。   The processing apparatus according to one aspect of the present invention includes a detection tube portion having a larger inner diameter than the downstream end of the first flow channel and the upstream end of the second flow channel, a light emitting unit, and a light receiving unit, and flows out of the first flow channel. And a simple detection means consisting of a detection unit that detects liquid falling continuously or intermittently in the detection tube unit, and the amount of light received by the light receiving unit per unit time is within a predetermined range. Since it is determined that the liquid having a predetermined flow rate is flowing, it can be confirmed at a low cost that the liquid is supplied at a small flow rate. In addition, since there is no movable part in this detection means, the machining apparatus according to one aspect of the present invention is less likely to fail than a machining apparatus provided with a flow meter having a movable part.

研磨装置の構成例を模式的に示す斜視図である。It is a perspective view which shows the structural example of a grinding | polishing apparatus typically. 研磨ユニットの構造等を模式的に示す一部断面側面図である。It is a partial cross section side view which shows typically the structure of a grinding | polishing unit, etc. 図３（Ａ）は、検出ユニットの構造等を模式的に示す縦断面図であり、図３（Ｂ）は、検出ユニットの構造等を模式的に示す横断面図である。FIG. 3A is a longitudinal sectional view schematically showing the structure and the like of the detection unit, and FIG. 3B is a transverse sectional view schematically showing the structure and the like of the detection unit. 図４（Ａ）は、液体が断続的に落下している状態を模式的に示す縦断面図であり、図４（Ｂ）は、受光ユニットの受光量と時間との関係を示すグラフである。FIG. 4A is a longitudinal sectional view schematically showing a state where the liquid is intermittently falling, and FIG. 4B is a graph showing the relationship between the amount of light received by the light receiving unit and time. . 図５（Ａ）は、液体が連続的に落下している状態を模式的に示す縦断面図であり、図５（Ｂ）は、受光ユニットの受光量と時間との関係を示すグラフである。FIG. 5A is a longitudinal sectional view schematically showing a state in which the liquid is continuously falling, and FIG. 5B is a graph showing the relationship between the amount of light received by the light receiving unit and time. . 図６（Ａ）は、第１流路から検出管に液体が供給されない状態を模式的に示す縦断面図であり、図６（Ｂ）は、受光ユニットの受光量と時間との関係を示すグラフである。FIG. 6A is a longitudinal sectional view schematically showing a state in which liquid is not supplied from the first flow path to the detection tube, and FIG. 6B shows the relationship between the amount of light received by the light receiving unit and time. It is a graph. 図７（Ａ）は、検出管から第２流路に液体が排出されない状態を模式的に示す縦断面図であり、図７（Ｂ）は、受光ユニットの受光量と時間との関係を示すグラフである。FIG. 7A is a longitudinal sectional view schematically showing a state in which liquid is not discharged from the detection tube to the second flow path, and FIG. 7B shows the relationship between the amount of light received by the light receiving unit and time. It is a graph. 変形例に係る検出ユニットの構造等を模式的に示す縦断面図である。It is a longitudinal cross-sectional view which shows typically the structure etc. of the detection unit which concerns on a modification.

添付図面を参照して、本発明の一態様に係る実施形態について説明する。図１は、本実施形態に係る研磨装置の構成例を模式的に示す斜視図である。なお、本実施形態では、加工装置の例として、板状の被加工物を研磨加工する研磨装置を示すが、本発明の加工装置は、被加工物を切削加工する切削装置や、被加工物を研削加工する研削装置等でも良い。   Embodiments according to one aspect of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a perspective view schematically showing a configuration example of a polishing apparatus according to the present embodiment. In this embodiment, a polishing apparatus that polishes a plate-like workpiece is shown as an example of a processing apparatus. However, the processing apparatus of the present invention is a cutting apparatus that cuts a workpiece or a workpiece. A grinding device or the like that grinds may be used.

図１に示すように、研磨装置（加工装置）２は、各構成要素が搭載される直方体状の基台４を備えている。基台４の後端には、壁状の支持構造６が設けられている。基台４の上面前部には、開口４ａが形成されており、この開口４ａ内には、板状の被加工物１１を搬送する搬送ユニット８が設けられている。   As shown in FIG. 1, the polishing device (processing device) 2 includes a rectangular parallelepiped base 4 on which each component is mounted. A wall-like support structure 6 is provided at the rear end of the base 4. An opening 4a is formed in the upper front portion of the base 4, and a transport unit 8 for transporting the plate-like workpiece 11 is provided in the opening 4a.

被加工物１１は、例えば、円盤状の半導体ウェーハや樹脂基板、セラミックス基板等であり、その一方側の面には、樹脂等でなる保護部材２１（図２参照）が貼り付けられている。本実施形態の研磨装置２では、保護部材２１が貼り付けられていない他方側の面を研磨加工する。なお、被加工物１１の材質、形状等に制限はない。また、保護部材２１を省略することもできる。   The workpiece 11 is, for example, a disk-shaped semiconductor wafer, a resin substrate, a ceramic substrate, or the like, and a protective member 21 (see FIG. 2) made of resin or the like is attached to one surface thereof. In the polishing apparatus 2 of the present embodiment, the other surface where the protective member 21 is not attached is polished. In addition, there is no restriction | limiting in the material of the workpiece 11, a shape, etc. Further, the protective member 21 can be omitted.

開口４ａの側方の領域には、複数の被加工物１１を収容するカセット１０ａ，１０ｂが載せられる。一方のカセット１０ａが載せられる領域の後方には、アライメント機構１２が設置されている。アライメント機構１２は、例えば、搬送ユニット８でカセット１０ａ，１０ｂから搬送された被加工物１１の中心の位置を調整する。   Cassettes 10a and 10b for accommodating a plurality of workpieces 11 are placed in a region on the side of the opening 4a. An alignment mechanism 12 is installed behind the area on which one cassette 10a is placed. The alignment mechanism 12 adjusts the center position of the workpiece 11 conveyed from the cassettes 10a and 10b by the conveyance unit 8, for example.

アライメント機構１２の後方には、被加工物１１を保持して旋回する搬入ユニット１４が設けられている。搬入ユニット１４の更に後方には、開口４ｂが形成されている。この開口４ｂ内には、Ｘ軸移動テーブル１６、Ｘ軸移動テーブル１６をＸ軸方向（前後方向）に移動させるＸ軸移動ユニット１８、及びＸ軸移動ユニット１８を覆う防塵防滴カバー２０が配置されている。   A carry-in unit 14 that holds and holds the workpiece 11 is provided behind the alignment mechanism 12. An opening 4 b is formed further rearward of the carry-in unit 14. In this opening 4b, an X-axis moving table 16, an X-axis moving unit 18 that moves the X-axis moving table 16 in the X-axis direction (front-rear direction), and a dust-proof and splash-proof cover 20 that covers the X-axis moving unit 18 are arranged. Has been.

Ｘ軸移動ユニット１８は、Ｘ軸方向に平行な一対のＸ軸ガイドレール（不図示）を備えており、Ｘ軸ガイドレールには、Ｘ軸移動テーブル１６がスライド可能に取り付けられている。Ｘ軸移動テーブル１６の下面側には、ナット部（不図示）が設けられており、このナット部には、Ｘ軸ガイドレールに平行なＸ軸ボールネジ（不図示）が螺合されている。   The X-axis movement unit 18 includes a pair of X-axis guide rails (not shown) parallel to the X-axis direction, and the X-axis movement table 16 is slidably attached to the X-axis guide rails. A nut portion (not shown) is provided on the lower surface side of the X-axis moving table 16, and an X-axis ball screw (not shown) parallel to the X-axis guide rail is screwed to the nut portion.

Ｘ軸ボールネジの一端部には、Ｘ軸パルスモータ（不図示）が連結されている。Ｘ軸パルスモータでＸ軸ボールネジを回転させることにより、Ｘ軸移動テーブル１６はＸ軸ガイドレールに沿ってＸ軸方向に移動する。Ｘ軸移動テーブル１６の上面には、被加工物１１を吸引、保持するチャックテーブル２２が設けられている。   An X-axis pulse motor (not shown) is connected to one end of the X-axis ball screw. By rotating the X-axis ball screw with the X-axis pulse motor, the X-axis moving table 16 moves in the X-axis direction along the X-axis guide rail. A chuck table 22 that sucks and holds the workpiece 11 is provided on the upper surface of the X-axis moving table 16.

チャックテーブル２２は、モータ等の回転駆動源（不図示）に連結されており、Ｚ軸方向（鉛直方向）に概ね平行な回転軸の周りに回転する。また、チャックテーブル２２は、上述のＸ軸移動ユニット１８により、被加工物１１が搬入、搬出される前方の搬入搬出領域と、被加工物１１が研磨加工される後方の研磨領域との間を移動する。   The chuck table 22 is connected to a rotation drive source (not shown) such as a motor, and rotates around a rotation axis substantially parallel to the Z-axis direction (vertical direction). Further, the chuck table 22 is provided between the front loading / unloading area where the workpiece 11 is loaded and unloaded by the X-axis moving unit 18 and the rear polishing area where the workpiece 11 is polished. Moving.

チャックテーブル２２の上面は、被加工物１１を吸引、保持する保持面２２ａとなっている。この保持面２２ａは、チャックテーブル２２の内部に形成された流路（不図示）等を通じて吸引源（不図示）に接続されている。搬入ユニット１４でチャックテーブル２２に搬入された被加工物１１は、保持面２２ａに作用する吸引源の負圧で吸引、保持される。   The upper surface of the chuck table 22 is a holding surface 22 a that sucks and holds the workpiece 11. The holding surface 22 a is connected to a suction source (not shown) through a flow path (not shown) formed in the chuck table 22. The workpiece 11 carried into the chuck table 22 by the carry-in unit 14 is sucked and held by the negative pressure of the suction source acting on the holding surface 22a.

支持構造６の前面には、Ｚ軸移動ユニット２４が設けられている。Ｚ軸移動ユニット２４は、Ｚ軸方向に平行な一対のＺ軸ガイドレール２６を備えており、このＺ軸ガイドレール２６には、Ｚ軸移動プレート２８がスライド可能に取り付けられている。Ｚ軸移動プレート２８の後面側（裏面側）には、ナット部（不図示）が設けられており、このナット部には、Ｚ軸ガイドレール２６に平行なＺ軸ボールネジ３０が螺合されている。   A Z-axis moving unit 24 is provided on the front surface of the support structure 6. The Z-axis movement unit 24 includes a pair of Z-axis guide rails 26 parallel to the Z-axis direction, and a Z-axis movement plate 28 is slidably attached to the Z-axis guide rails 26. A nut portion (not shown) is provided on the rear surface side (back surface side) of the Z-axis moving plate 28, and a Z-axis ball screw 30 parallel to the Z-axis guide rail 26 is screwed into the nut portion. Yes.

Ｚ軸ボールネジ３０の一端部には、Ｚ軸パルスモータ３２が連結されている。Ｚ軸パルスモータ３２でＺ軸ボールネジ３０を回転させることにより、Ｚ軸移動プレート２８はＺ軸ガイドレール２６に沿ってＺ軸方向に移動する。Ｚ軸移動プレート２８の前面には、固定具３４が設けられている。この固定具３４には、被加工物１１を研磨加工する研磨ユニット（加工手段）３６が支持されている。   A Z-axis pulse motor 32 is connected to one end of the Z-axis ball screw 30. By rotating the Z-axis ball screw 30 by the Z-axis pulse motor 32, the Z-axis moving plate 28 moves in the Z-axis direction along the Z-axis guide rail 26. A fixture 34 is provided on the front surface of the Z-axis moving plate 28. A polishing unit (processing means) 36 for polishing the workpiece 11 is supported on the fixture 34.

研磨ユニット３６は、固定具３４に固定された筒状のスピンドルハウジング３８を備えている。スピンドルハウジング３８の内部には、回転軸となるスピンドル４０が収容されており、スピンドル４０の下端部は、スピンドルハウジング３８から露出している。露出したスピンドル４０の下端部には、円盤状のマウント４２が固定されており、マウント４２の下面には、マウント４２と概ね同径の研磨ホイール４４が装着されている。   The polishing unit 36 includes a cylindrical spindle housing 38 fixed to the fixture 34. A spindle 40 serving as a rotation shaft is accommodated in the spindle housing 38, and a lower end portion of the spindle 40 is exposed from the spindle housing 38. A disc-shaped mount 42 is fixed to the exposed lower end portion of the spindle 40, and a polishing wheel 44 having substantially the same diameter as the mount 42 is attached to the lower surface of the mount 42.

図２は、研磨ユニット３６の構造等を模式的に示す一部断面側面図である。図２に示すように、研磨ホイール４４は、円盤状の基台４６を備えている。基台４６の下面には、不織布等でなる研磨パッド４８が接着されている。基台４６及び研磨パッド４８の中央部には、スラリー等の研磨用の液体を供給するための貫通穴（供給ノズル）４６ａ，４８ａが設けられている。   FIG. 2 is a partial cross-sectional side view schematically showing the structure and the like of the polishing unit 36. As shown in FIG. 2, the polishing wheel 44 includes a disk-shaped base 46. A polishing pad 48 made of a nonwoven fabric or the like is bonded to the lower surface of the base 46. In the central part of the base 46 and the polishing pad 48, through holes (supply nozzles) 46a and 48a for supplying a polishing liquid such as slurry are provided.

この貫通穴４６ａ，４８ａは、スピンドル４０及びマウント４２の内部に設けられた貫通穴（供給ノズル）４０ａ，４２ａに接続されている。図１及び図２に示すように、貫通穴４０ａの上端には、配管等でなる供給流路５０、液体の流れを検出する検出ユニット（検出手段）５２、液体の流量を調整する流量調整弁５４等を介して、液体の供給源５６が接続されている。流量調整弁５４としては、例えば、チューブポンプを使用できる。また、検出ユニット５２は、制御ユニット（判定手段）５８によって制御される。   The through holes 46 a and 48 a are connected to through holes (supply nozzles) 40 a and 42 a provided inside the spindle 40 and the mount 42. As shown in FIGS. 1 and 2, at the upper end of the through hole 40a, a supply flow path 50 made of piping or the like, a detection unit (detection means) 52 for detecting the flow of liquid, and a flow rate adjusting valve for adjusting the flow rate of liquid A liquid supply source 56 is connected via 54 and the like. As the flow rate adjustment valve 54, for example, a tube pump can be used. The detection unit 52 is controlled by a control unit (determination means) 58.

供給流路５０は、検出ユニット５２より上流側の第１流路５０ａと、検出ユニット５２より下流側の第２流路５０ｂとに分けられている。第１流路５０ａの上流端は、液体の供給源５６に接続されており、第２流路５０ｂの下流端は、スピンドル４０の貫通穴４０ａに接続されている。流量調整弁５４は、第１流路５０ａの中流部に設けられている。   The supply flow path 50 is divided into a first flow path 50 a upstream from the detection unit 52 and a second flow path 50 b downstream from the detection unit 52. The upstream end of the first flow path 50 a is connected to the liquid supply source 56, and the downstream end of the second flow path 50 b is connected to the through hole 40 a of the spindle 40. The flow rate adjusting valve 54 is provided in the midstream portion of the first flow path 50a.

そのため、供給源５６から供給された研磨用の液体は、流量調整弁５４で流量を調整された後に、検出ユニット５２を経て、貫通穴４０ａへと送られる。貫通穴４０ａへと送られた液体は、貫通穴４８ａ等を通じて被加工物１１へと供給される。これにより、研磨用の液体を供給しながら被加工物１１を研磨加工できる。   Therefore, the polishing liquid supplied from the supply source 56 is sent to the through hole 40 a through the detection unit 52 after the flow rate is adjusted by the flow rate adjusting valve 54. The liquid sent to the through hole 40a is supplied to the workpiece 11 through the through hole 48a and the like. Thus, the workpiece 11 can be polished while supplying the polishing liquid.

スピンドル４０の上端側には、モータ等の回転駆動源（不図示）が連結されており、研磨ホイール４４は、この回転駆動源から伝達される回転力で回転する。また、研磨ホイール４４は、上述したＺ軸移動ユニット２４によって下降する。これにより、チャックテーブル２２に保持された被加工物１１に研磨パッド４８を押し当てて、被加工物１１を研磨加工できる。   A rotary drive source (not shown) such as a motor is connected to the upper end side of the spindle 40, and the grinding wheel 44 rotates with the rotational force transmitted from the rotary drive source. Further, the polishing wheel 44 is lowered by the Z-axis moving unit 24 described above. Thus, the workpiece 11 can be polished by pressing the polishing pad 48 against the workpiece 11 held on the chuck table 22.

この研磨装置２で被加工物１１を研磨加工する際には、まず、保護部材２１を保持面２２ａに接触させるように被加工物１１をチャックテーブル２２に載せ、吸引源の負圧を作用させる。これにより、被加工物１１は、保護部材２１の貼り付けられていない他方側の面（被研磨面）が上方に露出した状態でチャックテーブル２２に吸引、保持される。   When the workpiece 11 is polished by the polishing apparatus 2, first, the workpiece 11 is placed on the chuck table 22 so that the protective member 21 is in contact with the holding surface 22a, and a negative pressure of a suction source is applied. . Thereby, the workpiece 11 is sucked and held by the chuck table 22 in a state where the other surface (surface to be polished) to which the protective member 21 is not attached is exposed upward.

次に、チャックテーブル２２を研磨領域に移動させる。そして、チャックテーブル２２と研磨ホイール４４とを相互に回転させて、上述した研磨用の液体を供給しながら被加工物１１の他方側の面に研磨パッド４８の下面（研磨面）４８ｂを押し当てる。これにより、被加工物１１の他方側の面を研磨加工できる。   Next, the chuck table 22 is moved to the polishing area. Then, the chuck table 22 and the polishing wheel 44 are rotated relative to each other, and the lower surface (polishing surface) 48b of the polishing pad 48 is pressed against the other surface of the workpiece 11 while supplying the above-described polishing liquid. . Thereby, the other surface of the workpiece 11 can be polished.

図１に示すように、搬入ユニット１４に隣接する位置には、被加工物１１を保持して旋回する搬出ユニット６０が設けられている。搬出ユニット６０の前方、かつ、他方のカセット１０ｂが載せられる領域の後方には、研磨加工後の被加工物１１を洗浄する洗浄ユニット６２が配置されている。   As shown in FIG. 1, at a position adjacent to the carry-in unit 14, a carry-out unit 60 that holds and turns the workpiece 11 is provided. A cleaning unit 62 for cleaning the workpiece 11 after polishing is disposed in front of the carry-out unit 60 and behind the area on which the other cassette 10b is placed.

洗浄ユニット６２で洗浄された被加工物１１は、例えば、搬送ユニット８で搬送され、カセット１０ａ，１０ｂに収容される。開口４ａの前方には、研磨加工の条件等を入力するための操作パネル６４が設置されている。   For example, the workpiece 11 cleaned by the cleaning unit 62 is transported by the transport unit 8 and accommodated in the cassettes 10a and 10b. An operation panel 64 is provided in front of the opening 4a for inputting polishing conditions and the like.

次に、上述した検出ユニット５２について詳述する。図３（Ａ）は、検出ユニット５２の構造等を模式的に示す縦断面図であり、図３（Ｂ）は、検出ユニット５２の構造等を模式的に示す横断面図である。図３（Ａ）及び図３（Ｂ）に示すように、検出ユニット５２は、筒状の検出管（検出管部）７２と、光学式の検出器（検出部）７４と、を備えている。   Next, the detection unit 52 described above will be described in detail. 3A is a longitudinal sectional view schematically showing the structure and the like of the detection unit 52, and FIG. 3B is a transverse sectional view schematically showing the structure and the like of the detection unit 52. As shown in FIGS. 3A and 3B, the detection unit 52 includes a cylindrical detection tube (detection tube portion) 72 and an optical detector (detection portion) 74. .

検出管７２は、例えば、検出器７４で使用される波長の光を透過する材質で形成されており、筒状の側壁部７２ｃと、側壁部７２ｃの両端を閉じる２つの底壁部７２ａ，７２ｂとを備える。この検出管７２は、図３（Ａ）に示すように、一方側の底壁部７２ａを上方に位置付け、他方側の底壁部７２ｂを下方に位置付けるように配置される。   The detection tube 72 is formed of, for example, a material that transmits light having the wavelength used in the detector 74, and has a cylindrical side wall portion 72c and two bottom wall portions 72a and 72b that close both ends of the side wall portion 72c. With. As shown in FIG. 3A, the detection tube 72 is arranged such that the bottom wall portion 72a on one side is positioned upward and the bottom wall portion 72b on the other side is positioned downward.

上方の底壁部７２ａには、第１流路５０ａの下流端が接続されている。一方、下方の底壁部７２ｂには、第２流路５０ｂの上流端が接続されている。また、検出管７２は、検出管７２の内径（内側の幅）が、第１流路５０ａの下流端の内径（内側の幅）及び第２流路５０ｂの上流端の内径（内側の幅）よりも大きくなるように形成されている。   A downstream end of the first flow path 50a is connected to the upper bottom wall portion 72a. On the other hand, the upstream end of the second flow path 50b is connected to the lower bottom wall portion 72b. Further, the detection tube 72 has an inner diameter (inner width) of the detection tube 72, an inner diameter (inner width) at the downstream end of the first flow channel 50a, and an inner diameter (inner width) of the upstream end of the second flow channel 50b. It is formed so as to be larger.

そのため、第１流路５０ａの下流端から流れ出た液体３１は、検出管７２内の検出空間７２ｄを重力によって落下する。落下後の液体３１は、第２流路５０ｂを通じてスピンドル４０の貫通穴４０ａに供給される。   Therefore, the liquid 31 that has flowed out from the downstream end of the first flow path 50a falls in the detection space 72d in the detection tube 72 by gravity. The dropped liquid 31 is supplied to the through hole 40a of the spindle 40 through the second flow path 50b.

検出器７４は、検出管７２の側壁部７２ｃを透過する波長の光３３を発する発光ユニット（発光部）７４ａと、発光ユニット７４ａからの光３３を受けて受光量に関する情報（電気信号）を制御ユニット５８に送る受光ユニット（受光部）７４ｂと、を備えている。この発光ユニット７４ａからの光３３が落下する液体３１によって遮られると、受光ユニット７４ｂの受光量は低下する。本実施形態では、この現象を利用して液体３１の流れを検出する。   The detector 74 controls a light emitting unit (light emitting unit) 74a that emits light 33 having a wavelength that passes through the side wall 72c of the detection tube 72, and information (electrical signal) regarding the amount of light received by receiving the light 33 from the light emitting unit 74a. A light receiving unit (light receiving unit) 74b to be sent to the unit 58. When the light 33 from the light emitting unit 74a is blocked by the falling liquid 31, the amount of light received by the light receiving unit 74b decreases. In this embodiment, the flow of the liquid 31 is detected using this phenomenon.

発光ユニット７４ａ及び受光ユニット７４ｂは、例えば、図３（Ｂ）に示すように、平面視で検出管７２よりも幅広くなるように形成されている。これにより、検出管７２内で落下する液体３１をもれなく検出できる。ただし、発光ユニット（発光部）７４ａ及び受光ユニット（受光部）７４ｂの幅、形状等に特段の制限はない。   For example, as shown in FIG. 3B, the light emitting unit 74a and the light receiving unit 74b are formed to be wider than the detection tube 72 in plan view. Thereby, the liquid 31 falling in the detection tube 72 can be detected without exception. However, there are no particular restrictions on the width and shape of the light emitting unit (light emitting unit) 74a and the light receiving unit (light receiving unit) 74b.

次に、上述した検出ユニット５２による液体３１の検出態様を説明する。図４（Ａ）は、液体３１が断続的に落下している状態を模式的に示す縦断面図であり、図４（Ｂ）は、受光ユニット７４ｂの受光量と時間との関係を示すグラフである。図４（Ａ）に示すように、液体３１が断続的に落下している場合には、図４（Ｂ）に示すように、落下する液体３１が光３３を遮るタイミングで、受光ユニット７４ｂの受光量は僅かに低下する。   Next, how the liquid 31 is detected by the detection unit 52 described above will be described. FIG. 4A is a longitudinal sectional view schematically showing a state where the liquid 31 is intermittently falling, and FIG. 4B is a graph showing the relationship between the amount of light received by the light receiving unit 74b and time. It is. As shown in FIG. 4 (A), when the liquid 31 is intermittently falling, as shown in FIG. 4 (B), at the timing when the falling liquid 31 blocks the light 33, the light receiving unit 74b The amount of light received decreases slightly.

図５（Ａ）は、液体３１が連続的に落下している状態を模式的に示す縦断面図であり、図５（Ｂ）は、受光ユニット７４ｂの受光量と時間との関係を示すグラフである。図５（Ａ）に示すように、液体３１が連続的に落下している場合には、図５（Ｂ）に示すように、液体３１が落下している期間で、受光ユニット７４ｂの受光量は僅かに低下した状態となる。   FIG. 5A is a longitudinal sectional view schematically showing a state in which the liquid 31 is continuously falling, and FIG. 5B is a graph showing the relationship between the amount of light received by the light receiving unit 74b and time. It is. As shown in FIG. 5A, when the liquid 31 is continuously falling, the amount of light received by the light receiving unit 74b during the period when the liquid 31 is falling as shown in FIG. 5B. Is slightly lowered.

図６（Ａ）は、第１流路５０ａから検出管７２に液体３１が供給されない状態を模式的に示す縦断面図であり、図６（Ｂ）は、受光ユニット７４ｂの受光量と時間との関係を示すグラフである。図６（Ａ）に示すように、第１流路５０ａの詰まり等の理由で第１流路５０ａから検出管７２に液体３１が供給されない場合、検出管７２内で液体３１は落下しない。よって、この場合には、図６（Ｂ）に示すように、受光ユニット７４ｂの受光量も低下しない。   FIG. 6A is a longitudinal sectional view schematically showing a state where the liquid 31 is not supplied from the first flow path 50a to the detection tube 72, and FIG. 6B shows the amount of light received by the light receiving unit 74b and the time. It is a graph which shows the relationship. As shown in FIG. 6A, when the liquid 31 is not supplied from the first flow path 50a to the detection tube 72 due to clogging of the first flow path 50a, the liquid 31 does not fall in the detection tube 72. Therefore, in this case, as shown in FIG. 6B, the amount of light received by the light receiving unit 74b does not decrease.

図７（Ａ）は、検出管７２から第２流路５０ｂに液体３１が排出されない状態を模式的に示す縦断面図であり、図７（Ｂ）は、受光ユニット７４ｂの受光量と時間との関係を示すグラフである。図７（Ａ）に示すように、第２流路５０ｂの詰まり等の理由で第２流路５０ｂに液体３１が排出されない場合、検出管７２内の液体３１は徐々に増加する。よって、この場合には、図７（Ｂ）に示すように、検出管７２内の液体３１の液面の高さがある程度に達すると、受光ユニット７４ｂの受光量は大幅に低下した状態となる。   FIG. 7A is a longitudinal sectional view schematically showing a state in which the liquid 31 is not discharged from the detection tube 72 to the second flow path 50b. FIG. 7B shows the amount of light received by the light receiving unit 74b and the time. It is a graph which shows the relationship. As shown in FIG. 7A, when the liquid 31 is not discharged to the second flow path 50b due to clogging of the second flow path 50b, the liquid 31 in the detection tube 72 gradually increases. Therefore, in this case, as shown in FIG. 7B, when the level of the liquid 31 in the detection tube 72 reaches a certain level, the amount of light received by the light receiving unit 74b is significantly reduced. .

よって、上述のような検出態様を考慮することで、液体３１の流れを検出できる。受光ユニット７４ｂの受光量に関する情報は、制御ユニット５８に通知され、所定の流量の液体３１が流れているか否かの判定処理に使用される。   Therefore, the flow of the liquid 31 can be detected by considering the detection mode as described above. Information regarding the amount of light received by the light receiving unit 74b is notified to the control unit 58, and is used for the determination process of whether or not the liquid 31 having a predetermined flow rate is flowing.

制御ユニット５８は、例えば、任意の単位時間あたりの受光量が所定の範囲内である場合に、供給流路５０に所定の流量の液体３１が流れていると判定する。所定の範囲は、例えば、液体３１が断続的に落下する場合の受光量（図４（Ｂ））、及び液体３１が連続的に落下する場合の受光量（図５（Ｂ））を含むように設定される。   For example, the control unit 58 determines that the liquid 31 having a predetermined flow rate is flowing in the supply flow path 50 when the amount of received light per unit time is within a predetermined range. The predetermined range includes, for example, the amount of light received when the liquid 31 is intermittently dropped (FIG. 4B) and the amount of light received when the liquid 31 is continuously dropped (FIG. 5B). Set to

一方、受光量が所定の範囲よりも多い場合、制御ユニット５８は、供給流路５０に所定の流量よりも小さな流量の液体３１が流れている、又は供給流路５０に液体３１が流れていないと判定する。更に、受光量が所定の範囲よりも少ない場合、制御ユニット５８は、供給流路５０に所定の流量よりも大きな流量の液体３１が流れている、又は供給流路５０に液体が流れていないと判定する。   On the other hand, when the amount of received light is larger than the predetermined range, the control unit 58 causes the liquid 31 having a flow rate smaller than the predetermined flow rate to flow through the supply flow path 50 or the liquid 31 does not flow through the supply flow path 50. Is determined. Further, when the amount of received light is smaller than the predetermined range, the control unit 58 indicates that the liquid 31 having a flow rate larger than the predetermined flow rate is flowing in the supply flow channel 50 or the liquid is not flowing in the supply flow channel 50. judge.

制御ユニット５８は、供給流路５０に所定の流量の液体３１が流れていると判定しなかった場合には、オペレータ等にその旨を報知することが望ましい。これにより、供給流路５０の詰まり等の問題に対して素早く対応できる。オペレータ等への報知は、警告灯の発光、警告音の発生、操作パネル６４への表示等の方法で行うことができる。   When the control unit 58 does not determine that the liquid 31 having a predetermined flow rate is flowing in the supply flow path 50, it is desirable to notify the operator or the like to that effect. Thereby, it is possible to quickly cope with problems such as clogging of the supply flow path 50. Notification to the operator or the like can be performed by a method such as emission of a warning lamp, generation of a warning sound, display on the operation panel 64, or the like.

以上のように、本実施形態に係る研磨装置（加工装置）２では、第１流路５０ａの下流端及び第２流路５０ｂの上流端よりも内径が大きい検出管（検出管部）７２と、発光ユニット（発光部）７４ａ及び受光ユニット（受光部）７４ｂからなり、第１流路５０ａから流れ出て検出管７２内で連続的又は断続的に落下する液体３１を検出する検出器（検出部）７４と、で構成されるシンプルな検出ユニット（検出手段）５２を用い、単位時間あたりの受光ユニット７４ｂの受光量が所定の範囲内である場合に、所定の流量の液体３１が流れていると判定するので、小さな流量３１で液体が供給されていることを低いコストで確認できる。また、この検出ユニット５２には、可動部分が存在しないので、本実施形態に係る研磨装置２は、可動部分のある流量計を備えた研磨装置に比べて故障し難い。   As described above, in the polishing device (processing device) 2 according to this embodiment, the detection tube (detection tube portion) 72 having a larger inner diameter than the downstream end of the first flow channel 50a and the upstream end of the second flow channel 50b, A detector (detection unit) that detects the liquid 31 that flows out of the first flow path 50a and falls continuously or intermittently in the detection tube 72, and includes a light emitting unit (light emitting unit) 74a and a light receiving unit (light receiving unit) 74b. ) 74, and the amount of light received by the light receiving unit 74 b per unit time is within a predetermined range, the liquid 31 having a predetermined flow rate is flowing. Therefore, it can be confirmed at a low cost that the liquid is supplied at a small flow rate 31. Further, since there is no movable part in the detection unit 52, the polishing apparatus 2 according to the present embodiment is less likely to fail compared to a polishing apparatus provided with a flow meter having a movable part.

なお、本発明は上記実施形態の記載に限定されず、種々変更して実施可能である。例えば、上記実施形態では、円筒状の検出管７２を用いているが、検出管７２は円筒状でなくても良い。また、上記実施形態では、検出器（検出部）７４を検出管（検出管部）７２の外部に配置した検出ユニット５２を例示しているが、検出管７２の内部に検出器７４を露出させても良い。   In addition, this invention is not limited to description of the said embodiment, A various change can be implemented. For example, in the above embodiment, the cylindrical detection tube 72 is used, but the detection tube 72 may not be cylindrical. In the above-described embodiment, the detection unit 52 in which the detector (detection unit) 74 is disposed outside the detection tube (detection tube unit) 72 is illustrated. However, the detector 74 is exposed inside the detection tube 72. May be.

図８は、変形例に係る検出ユニット５２の構造等を模式的に示す縦断面図である。図８に示すように、検出管７２の内部に検出器７４（発光ユニット７４ａ及び受光ユニット７４ｂ）を露出させる場合には、検出器７４で使用される波長の光を透過しない材質で検出管７２を形成することもできる。   FIG. 8 is a longitudinal sectional view schematically showing the structure and the like of the detection unit 52 according to the modification. As shown in FIG. 8, when the detector 74 (light emitting unit 74 a and light receiving unit 74 b) is exposed inside the detection tube 72, the detection tube 72 is made of a material that does not transmit light having a wavelength used by the detector 74. Can also be formed.

その他、上記実施形態に係る構造、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。   In addition, the structure, method, and the like according to the above-described embodiment can be appropriately modified and implemented without departing from the scope of the object of the present invention.

２ 研磨装置（加工装置）
４ 基台
４ａ，４ｂ 開口
６ 支持構造
８ 搬送ユニット
１０ａ，１０ｂ カセット
１２ アライメント機構
１４ 搬入ユニット
１６ Ｘ軸移動テーブル
１８ Ｘ軸移動ユニット
２０ 防塵防滴カバー
２２ チャックテーブル
２２ａ 保持面
２４ Ｚ軸移動ユニット
２６ Ｚ軸ガイドレール
２８ Ｚ軸移動プレート
３０ Ｚ軸ボールネジ
３２ Ｚ軸パルスモータ
３４ 固定具
３６ 研磨ユニット（加工手段）
３８ スピンドルハウジング
４０ スピンドル
４０ａ 貫通穴（供給ノズル）
４２ マウント
４２ａ 貫通穴（供給ノズル）
４４ 研磨ホイール
４６ 基台
４６ａ 貫通穴（供給ノズル）
４８ 研磨パッド
４８ａ 貫通穴（供給ノズル）
４８ｂ 下面（研磨面）
５０ 供給流路
５０ａ 第１流路
５０ｂ 第２流路
５２ 検出ユニット（検出手段）
５４ 流量調整弁
５６ 供給源
５８ 制御ユニット（判定手段）
６０ 搬出ユニット
６２ 洗浄ユニット
６４ 操作パネル
７２ 検出管（検出管部）
７２ａ 底壁部
７２ｂ 底壁部
７２ｃ 側壁部
７２ｄ 検出空間
７４ 検出器（検出部）
７４ａ 発光ユニット（発光部）
７４ｂ 受光ユニット（受光部）
１１ 被加工物
２１ 保護部材
３１ 液体
３３ 光 2 Polishing equipment (processing equipment)
4 Base 4a, 4b Opening 6 Support structure 8 Transport unit 10a, 10b Cassette 12 Alignment mechanism 14 Loading unit 16 X-axis moving table 18 X-axis moving unit 20 Dust-proof drip-proof cover 22 Chuck table 22a Holding surface 24 Z-axis moving unit 26 Z-axis guide rail 28 Z-axis moving plate 30 Z-axis ball screw 32 Z-axis pulse motor 34 Fixing tool 36 Polishing unit (processing means)
38 Spindle housing 40 Spindle 40a Through hole (supply nozzle)
42 Mount 42a Through hole (supply nozzle)
44 Grinding wheel 46 Base 46a Through hole (supply nozzle)
48 Polishing pad 48a Through hole (supply nozzle)
48b bottom surface (polished surface)
50 Supply channel 50a First channel 50b Second channel 52 Detection unit (detection means)
54 Flow control valve 56 Supply source 58 Control unit (determination means)
60 Unloading unit 62 Cleaning unit 64 Operation panel 72 Detection tube (detection tube)
72a bottom wall part 72b bottom wall part 72c side wall part 72d detection space 74 detector (detection part)
74a Light emitting unit (light emitting unit)
74b Light receiving unit (light receiving unit)
11 Workpiece 21 Protective Member 31 Liquid 33 Light

Claims (3)

チャックテーブルで保持した被加工物に液体を供給しつつ加工する加工手段を備える加工装置であって、
被加工物に液体を供給する供給ノズルと、
液体の供給源に接続する第１流路、及び該供給ノズルに接続する第２流路を含む供給流路と、
該供給源から供給される液体の流量を調整する流量調整弁と、
該第１流路と該第２流路との間に設けられ、液体の流れを検出する検出手段と、
該検出手段の検出結果に基づいて、該供給流路に所定の流量の液体が流れているか否かを判定する判定手段と、を備え、
該検出手段は、
上部に該第１流路の下流端が接続すると共に、下部に該第２流路の上流端が接続し、該第１流路の下流端及び該第２流路の上流端よりも内径が大きい検出管部と、
発光部及び受光部からなり、該第１流路から流れ出て該検出管部内で連続的又は断続的に落下する液体を検出する検出部と、を有し、
該判定手段は、単位時間あたりの該受光部の受光量が所定の範囲内である場合に、該所定の流量の液体が流れていると判定することを特徴とする加工装置。 A processing apparatus comprising processing means for processing while supplying a liquid to a workpiece held by a chuck table,
A supply nozzle for supplying liquid to the workpiece;
A supply flow path including a first flow path connected to a liquid supply source and a second flow path connected to the supply nozzle;
A flow rate adjustment valve for adjusting the flow rate of the liquid supplied from the supply source;
A detecting means provided between the first flow path and the second flow path for detecting a liquid flow;
Determination means for determining whether a predetermined flow rate of liquid is flowing in the supply flow path based on the detection result of the detection means,
The detection means includes
The upper end of the first flow path is connected to the upper part, the upper end of the second flow path is connected to the lower part, and the inner diameter is smaller than the downstream end of the first flow path and the upstream end of the second flow path. A large detector tube,
Comprising a light emitting part and a light receiving part, and having a detection part for detecting a liquid flowing out from the first flow path and falling continuously or intermittently in the detection tube part,
The processing apparatus determines that the liquid having the predetermined flow rate is flowing when the amount of light received by the light receiving unit per unit time is within a predetermined range. 該受光部の受光量が該所定の範囲よりも多い場合、該供給流路に該所定の流量よりも小さな流量の液体が流れている、又は該供給流路に液体が流れていないと判定することを特徴とする請求項１記載の加工装置。   When the amount of light received by the light receiving unit is larger than the predetermined range, it is determined that a liquid having a flow rate smaller than the predetermined flow rate is flowing in the supply flow channel, or that no liquid is flowing in the supply flow channel. The processing apparatus according to claim 1. 該受光部の受光量が該所定の範囲よりも少ない場合、該供給流路に該所定の流量よりも大きな流量の液体が流れている、又は該供給流路に液体が流れていないと判定することを特徴とする請求項１又は請求項２に記載の加工装置。   When the amount of light received by the light receiving unit is smaller than the predetermined range, it is determined that a liquid having a flow rate larger than the predetermined flow rate is flowing in the supply flow channel, or that no liquid is flowing in the supply flow channel. The processing apparatus according to claim 1 or 2, characterized in that
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020131294A (en) * 2019-02-13 2020-08-31 株式会社ディスコ Waste liquid treatment apparatus

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827560A (en) * 1981-08-11 1983-02-18 テルモ株式会社 Medical pouring apparatus
JPH11190675A (en) * 1997-10-21 1999-07-13 Eagle Ind Co Ltd Device for detecting leakage from sealing device
JP2002011095A (en) * 2000-06-28 2002-01-15 Oi Electric Co Ltd Instillation monitoring device and its system
JP2002313753A (en) * 2001-04-19 2002-10-25 Tokyo Seimitsu Co Ltd Cutting water supply controller for dicing device
JP2007222949A (en) * 2004-03-24 2007-09-06 Nikon Corp Liquid supplying apparatus, polishing apparatus and semiconductor device manufacturing method
JP2008221425A (en) * 2007-03-14 2008-09-25 Ota Kk Closed type nozzle device for machining
US20110178476A1 (en) * 2010-01-19 2011-07-21 Gwg International Inc. Drip detector with multiple symmetric sensors and signal transmission by zigbee network

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0165322B1 (en) * 1995-12-27 1999-02-01 김광호 Hmds supply apparatus and the method thereof
CN2722928Y (en) * 2004-08-31 2005-09-07 季兵 Dropping speed monitoring alarm venous transfusion device
JP5456087B2 (en) * 2012-02-20 2014-03-26 富士フイルム株式会社 Image forming apparatus
US9562325B2 (en) * 2013-12-27 2017-02-07 Seiko Epson Corporation Sheet manufacturing apparatus and sheet manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827560A (en) * 1981-08-11 1983-02-18 テルモ株式会社 Medical pouring apparatus
JPH11190675A (en) * 1997-10-21 1999-07-13 Eagle Ind Co Ltd Device for detecting leakage from sealing device
JP2002011095A (en) * 2000-06-28 2002-01-15 Oi Electric Co Ltd Instillation monitoring device and its system
JP2002313753A (en) * 2001-04-19 2002-10-25 Tokyo Seimitsu Co Ltd Cutting water supply controller for dicing device
JP2007222949A (en) * 2004-03-24 2007-09-06 Nikon Corp Liquid supplying apparatus, polishing apparatus and semiconductor device manufacturing method
JP2008221425A (en) * 2007-03-14 2008-09-25 Ota Kk Closed type nozzle device for machining
US20110178476A1 (en) * 2010-01-19 2011-07-21 Gwg International Inc. Drip detector with multiple symmetric sensors and signal transmission by zigbee network

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020131294A (en) * 2019-02-13 2020-08-31 株式会社ディスコ Waste liquid treatment apparatus
JP7364341B2 (en) 2019-02-13 2023-10-18 株式会社ディスコ Waste liquid treatment equipment

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