JP2017069424A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017069424A5 JP2017069424A5 JP2015194330A JP2015194330A JP2017069424A5 JP 2017069424 A5 JP2017069424 A5 JP 2017069424A5 JP 2015194330 A JP2015194330 A JP 2015194330A JP 2015194330 A JP2015194330 A JP 2015194330A JP 2017069424 A5 JP2017069424 A5 JP 2017069424A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- film according
- crystalline semiconductor
- plane
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 239000010431 corundum Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015194330A JP6945121B2 (ja) | 2015-09-30 | 2015-09-30 | 結晶性半導体膜および半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015194330A JP6945121B2 (ja) | 2015-09-30 | 2015-09-30 | 結晶性半導体膜および半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017069424A JP2017069424A (ja) | 2017-04-06 |
| JP2017069424A5 true JP2017069424A5 (enrdf_load_stackoverflow) | 2018-11-22 |
| JP6945121B2 JP6945121B2 (ja) | 2021-10-06 |
Family
ID=58495321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015194330A Active JP6945121B2 (ja) | 2015-09-30 | 2015-09-30 | 結晶性半導体膜および半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6945121B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6934852B2 (ja) * | 2018-12-18 | 2021-09-15 | 信越化学工業株式会社 | 酸化ガリウム膜の製造方法 |
| JP7179294B2 (ja) * | 2019-04-12 | 2022-11-29 | 信越化学工業株式会社 | 酸化ガリウム半導体膜の製造方法 |
| EP3960914A4 (en) * | 2019-04-24 | 2022-12-28 | NGK Insulators, Ltd. | Semiconductor film |
| JP7066658B2 (ja) * | 2019-06-14 | 2022-05-13 | 信越化学工業株式会社 | 酸化物半導体膜の製造方法 |
| WO2021044489A1 (ja) * | 2019-09-02 | 2021-03-11 | 日本碍子株式会社 | 半導体膜 |
| JP6994694B2 (ja) * | 2020-02-27 | 2022-01-14 | 信越化学工業株式会社 | 成膜用霧化装置及びこれを用いた成膜装置 |
| JP7708348B2 (ja) * | 2020-06-30 | 2025-07-15 | 株式会社Flosfia | 結晶性酸化物膜および半導体装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120045661A1 (en) * | 2010-08-19 | 2012-02-23 | Raveen Kumaran | Rare-earth-doped aluminum-gallium-oxide films in the corundum-phase and related methods |
| JP6142358B2 (ja) * | 2011-09-08 | 2017-06-07 | 株式会社タムラ製作所 | Ｇａ２Ｏ３系半導体素子 |
| JP5948581B2 (ja) * | 2011-09-08 | 2016-07-06 | 株式会社Flosfia | Ｇａ２Ｏ３系半導体素子 |
| US9142623B2 (en) * | 2011-09-08 | 2015-09-22 | Tamura Corporation | Substrate for epitaxial growth, and crystal laminate structure |
| JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Ｒｏｃａ株式会社 | 半導体装置および結晶 |
| JP6152514B2 (ja) * | 2013-10-17 | 2017-06-28 | 株式会社Flosfia | 半導体装置及びその製造方法、並びに結晶及びその製造方法 |
| JP2015164158A (ja) * | 2014-02-28 | 2015-09-10 | 株式会社Flosfia | 半導体装置用積層構造体、半導体装置 |
| EP3783662B1 (en) * | 2014-09-02 | 2025-03-12 | Flosfia Inc. | Laminated structure and method for manufacturing same, semiconductor device, and crystalline film |
| JP6967213B2 (ja) * | 2015-04-10 | 2021-11-17 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
-
2015
- 2015-09-30 JP JP2015194330A patent/JP6945121B2/ja active Active