JP2017059645A - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP2017059645A
JP2017059645A JP2015182313A JP2015182313A JP2017059645A JP 2017059645 A JP2017059645 A JP 2017059645A JP 2015182313 A JP2015182313 A JP 2015182313A JP 2015182313 A JP2015182313 A JP 2015182313A JP 2017059645 A JP2017059645 A JP 2017059645A
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JP
Japan
Prior art keywords
semiconductor layer
region
semiconductor
light emitting
layer
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Ceased
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JP2015182313A
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English (en)
Japanese (ja)
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JP2017059645A5 (enExample
Inventor
純平 田島
Junpei Tajima
純平 田島
広持 加賀
Koji Kaga
広持 加賀
浩志 大野
Hiroshi Ono
浩志 大野
布上　真也
Shinya Nunoue
真也 布上
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Toshiba Corp
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Toshiba Corp
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Priority to JP2015182313A priority Critical patent/JP2017059645A/ja
Publication of JP2017059645A publication Critical patent/JP2017059645A/ja
Publication of JP2017059645A5 publication Critical patent/JP2017059645A5/ja
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JP2015182313A 2015-09-15 2015-09-15 半導体発光素子 Ceased JP2017059645A (ja)

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JP2015182313A JP2017059645A (ja) 2015-09-15 2015-09-15 半導体発光素子

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JP2015182313A JP2017059645A (ja) 2015-09-15 2015-09-15 半導体発光素子

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JP2017059645A true JP2017059645A (ja) 2017-03-23
JP2017059645A5 JP2017059645A5 (enExample) 2018-11-01

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JP2015182313A Ceased JP2017059645A (ja) 2015-09-15 2015-09-15 半導体発光素子

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Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087515A (ja) * 2008-09-30 2010-04-15 Seoul Opto Devices Co Ltd 発光素子及びその製造方法
JP2010525585A (ja) * 2007-04-26 2010-07-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体ボディおよびその製造方法
US20110133219A1 (en) * 2009-12-07 2011-06-09 Chao-Hsing Chen Light emitting element array
JP2011139038A (ja) * 2009-12-31 2011-07-14 Seoul Opto Devices Co Ltd 発光素子及びその製造方法
US20120043563A1 (en) * 2009-04-06 2012-02-23 James Ibbetson High Voltage Low Current Surface Emitting Light Emitting Diode
JP2012069909A (ja) * 2010-08-27 2012-04-05 Toyoda Gosei Co Ltd 発光素子
US20120080695A1 (en) * 2010-04-06 2012-04-05 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
JP2012195321A (ja) * 2011-03-14 2012-10-11 Toshiba Corp 半導体発光素子
JP2012212849A (ja) * 2011-03-23 2012-11-01 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2012243825A (ja) * 2011-05-16 2012-12-10 Toshiba Corp 半導体発光素子
JP2013524496A (ja) * 2010-03-31 2013-06-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体チップ
JP2013225640A (ja) * 2012-03-23 2013-10-31 Toshiba Corp 半導体発光装置及びその製造方法
US20130299867A1 (en) * 2010-10-11 2013-11-14 Osram Opto Semiconductors Gmbh Light-emitting diode chip
JP2014041886A (ja) * 2012-08-21 2014-03-06 Toshiba Corp 半導体発光素子
EP2728631A1 (en) * 2012-11-05 2014-05-07 Iljin Led Co., Ltd. Semiconductor light emitting diode including thermally conductive substrate
JP2014154727A (ja) * 2013-02-08 2014-08-25 Toshiba Corp 半導体発光素子
JP2014524665A (ja) * 2011-08-15 2014-09-22 マイクロン テクノロジー， インク． 高電圧固体変換器ならびに関連システムおよび方法
JP2014195055A (ja) * 2013-02-28 2014-10-09 Nichia Chem Ind Ltd 半導体発光素子
JP6462274B2 (ja) * 2014-08-21 2019-01-30 株式会社東芝 半導体発光素子

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010525585A (ja) * 2007-04-26 2010-07-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体ボディおよびその製造方法
JP2010087515A (ja) * 2008-09-30 2010-04-15 Seoul Opto Devices Co Ltd 発光素子及びその製造方法
US20120043563A1 (en) * 2009-04-06 2012-02-23 James Ibbetson High Voltage Low Current Surface Emitting Light Emitting Diode
US20110133219A1 (en) * 2009-12-07 2011-06-09 Chao-Hsing Chen Light emitting element array
JP2011139038A (ja) * 2009-12-31 2011-07-14 Seoul Opto Devices Co Ltd 発光素子及びその製造方法
JP2013524496A (ja) * 2010-03-31 2013-06-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体チップ
US20120080695A1 (en) * 2010-04-06 2012-04-05 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
JP2012069909A (ja) * 2010-08-27 2012-04-05 Toyoda Gosei Co Ltd 発光素子
US20130299867A1 (en) * 2010-10-11 2013-11-14 Osram Opto Semiconductors Gmbh Light-emitting diode chip
JP2012195321A (ja) * 2011-03-14 2012-10-11 Toshiba Corp 半導体発光素子
JP2012212849A (ja) * 2011-03-23 2012-11-01 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2012243825A (ja) * 2011-05-16 2012-12-10 Toshiba Corp 半導体発光素子
JP2014524665A (ja) * 2011-08-15 2014-09-22 マイクロン テクノロジー， インク． 高電圧固体変換器ならびに関連システムおよび方法
JP2013225640A (ja) * 2012-03-23 2013-10-31 Toshiba Corp 半導体発光装置及びその製造方法
JP2014041886A (ja) * 2012-08-21 2014-03-06 Toshiba Corp 半導体発光素子
EP2728631A1 (en) * 2012-11-05 2014-05-07 Iljin Led Co., Ltd. Semiconductor light emitting diode including thermally conductive substrate
JP2014154727A (ja) * 2013-02-08 2014-08-25 Toshiba Corp 半導体発光素子
JP2014195055A (ja) * 2013-02-28 2014-10-09 Nichia Chem Ind Ltd 半導体発光素子
JP6462274B2 (ja) * 2014-08-21 2019-01-30 株式会社東芝 半導体発光素子

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