JP2017059645A5 - - Google Patents

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Publication number
JP2017059645A5
JP2017059645A5 JP2015182313A JP2015182313A JP2017059645A5 JP 2017059645 A5 JP2017059645 A5 JP 2017059645A5 JP 2015182313 A JP2015182313 A JP 2015182313A JP 2015182313 A JP2015182313 A JP 2015182313A JP 2017059645 A5 JP2017059645 A5 JP 2017059645A5
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JP
Japan
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view
plan
sectional
light emitting
emitting device
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Ceased
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JP2015182313A
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English (en)
Japanese (ja)
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JP2017059645A (ja
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Priority to JP2015182313A priority Critical patent/JP2017059645A/ja
Priority claimed from JP2015182313A external-priority patent/JP2017059645A/ja
Publication of JP2017059645A publication Critical patent/JP2017059645A/ja
Publication of JP2017059645A5 publication Critical patent/JP2017059645A5/ja
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JP2015182313A 2015-09-15 2015-09-15 半導体発光素子 Ceased JP2017059645A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015182313A JP2017059645A (ja) 2015-09-15 2015-09-15 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015182313A JP2017059645A (ja) 2015-09-15 2015-09-15 半導体発光素子

Publications (2)

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JP2017059645A JP2017059645A (ja) 2017-03-23
JP2017059645A5 true JP2017059645A5 (enExample) 2018-11-01

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JP2015182313A Ceased JP2017059645A (ja) 2015-09-15 2015-09-15 半導体発光素子

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JP (1) JP2017059645A (enExample)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
TWI397989B (zh) * 2009-12-07 2013-06-01 晶元光電股份有限公司 發光二極體陣列
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
DE102010013494A1 (de) * 2010-03-31 2011-10-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
WO2011126248A2 (en) * 2010-04-06 2011-10-13 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
JP5633477B2 (ja) * 2010-08-27 2014-12-03 豊田合成株式会社 発光素子
DE102010048159B4 (de) * 2010-10-11 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
JP5541261B2 (ja) * 2011-03-23 2014-07-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP4989773B1 (ja) * 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
US9299742B2 (en) * 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
JP5985322B2 (ja) * 2012-03-23 2016-09-06 株式会社東芝 半導体発光装置及びその製造方法
JP5377725B1 (ja) * 2012-08-21 2013-12-25 株式会社東芝 半導体発光素子
KR101565122B1 (ko) * 2012-11-05 2015-11-02 일진엘이디(주) 열전도성 기판을 갖는 단일칩 반도체 발광소자
JP6013931B2 (ja) * 2013-02-08 2016-10-25 株式会社東芝 半導体発光素子
JP6287317B2 (ja) * 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子
JP6462274B2 (ja) * 2014-08-21 2019-01-30 株式会社東芝 半導体発光素子

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