JP2017054875A - 半導体装置及びそれを用いた電子機器 - Google Patents
半導体装置及びそれを用いた電子機器 Download PDFInfo
- Publication number
- JP2017054875A JP2017054875A JP2015176505A JP2015176505A JP2017054875A JP 2017054875 A JP2017054875 A JP 2017054875A JP 2015176505 A JP2015176505 A JP 2015176505A JP 2015176505 A JP2015176505 A JP 2015176505A JP 2017054875 A JP2017054875 A JP 2017054875A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- wiring
- metal layer
- circuit block
- analog circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 221
- 239000002184 metal Substances 0.000 claims abstract description 221
- 239000000945 filler Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims description 17
- 238000012858 packaging process Methods 0.000 abstract description 20
- 239000000463 material Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000007789 sealing Methods 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 173
- 239000011229 interlayer Substances 0.000 description 47
- 239000010949 copper Substances 0.000 description 18
- 230000001902 propagating effect Effects 0.000 description 11
- 230000000644 propagated effect Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
【解決手段】この半導体装置は、半導体基板と、半導体基板に設けられた能動素子を含むアナログ回路ブロックと、アナログ回路ブロックの上方に位置し、スリットを有する金属層又は並行して配列された複数の金属配線と、少なくとも金属層又は複数の金属配線の上方に位置し、フィラーを含む樹脂層とを備える。
【選択図】図1
Description
<第1の実施形態>
図1は、本発明の第1の実施形態に係る半導体装置の構成例を示す平面図である。なお、図1においては、第3の配線層のレイアウトを示すために、それより上の層は省略されている。図1に示すように、この半導体装置は、半導体基板10と、半導体基板10に設けられたアナログ回路ブロック21〜22及びデジタル回路ブロック31〜33とを含んでいる。半導体基板10は、シリコン等の半導体材料で構成される。
図4は、本発明の第2の実施形態に係る半導体装置の断面図である。第2の実施形態においては、金属層41が、第3の配線層ではなく第2の配線層に設けられている。その他の点に関しては、第2の実施形態は、第1の実施形態と同様でも良い。
図5は、本発明の第3の実施形態に係る半導体装置の断面図である。第3の実施形態においては、第2の配線層に第1の金属層41が設けられると共に、第3の配線層に第2の金属層41aが設けられている。その他の点に関しては、第3の実施形態は、第1又は第2の実施形態と同様でも良い。
図6は、本発明の第4の実施形態に係る半導体装置の構成例を示す平面図である。なお、図6においては、第3の配線層のレイアウトを示すために、それより上の層は省略されている。第4の実施形態においては、図1に示す金属層41及び42の替りに、複数の金属配線44及び複数の金属配線45が設けられている。その他の点に関しては、第4の実施形態は、第1の実施形態と同様でも良い。
図8は、本発明の第5の実施形態に係る半導体装置の構成例を示す平面図である。なお、図8においては、第2の配線層のレイアウトを示すために、それより上の層は省略されている。第5の実施形態においては、図1に示す金属層41及び42の替りに、第2の配線層に第1の金属層46及び47が設けられると共に、第3の配線層に第2の金属層が設けられている。さらに、第1の金属層と第2の金属層とを接続する金属部材(金属ピラー)48が設けられている。その他の点に関しては、第5の実施形態は、第3の実施形態と同様でも良い。
次に、本発明の一実施形態に係る電子機器について説明する。
図11は、本発明の一実施形態に係る電子機器の構成例を示すブロック図である。図11に示すように、電子機器100は、本発明のいずれかの実施形態に係る半導体装置を用いた通信部110を含み、さらに、CPU120と、操作部130と、ROM(リードオンリー・メモリー)140と、RAM(ランダムアクセス・メモリー)150と、音声出力部160と、表示部170とを含んでも良い。なお、図11に示す構成要素の一部を省略又は変更しても良いし、あるいは、図11に示す構成要素に他の構成要素を付加しても良い。
Claims (6)
- 半導体基板と、
前記半導体基板に設けられた能動素子を含むアナログ回路ブロックと、
前記アナログ回路ブロックの上方に位置し、スリットを有する金属層又は並行して配列された複数の金属配線と、
少なくとも前記金属層又は前記複数の金属配線の上方に位置し、フィラーを含む樹脂層と、
を備える半導体装置。 - 前記スリットの幅又は前記複数の金属配線の間隔が、前記フィラーの粒径よりも小さい、請求項1記載の半導体装置。
- 前記金属層のスリットの面積が、前記金属層の面積の20%よりも小さいか、又は、前記複数の金属配線の間に位置する領域の面積が、前記複数の金属配線の面積の20%よりも小さい、請求項1又は2記載の半導体装置。
- 半導体基板と、
前記半導体基板に設けられた能動素子を含むアナログ回路ブロックと、
前記アナログ回路ブロックの上方に位置する第1の金属層と、
前記第1の金属層上に絶縁膜を介して位置する第2の金属層と、
前記絶縁膜に形成されたスルーホールに充填され、前記第1の金属層と前記第2の金属層とを接続する金属部材と、
少なくとも前記第2の金属層の上方に位置し、フィラーを含む樹脂層と、
を備える半導体装置。 - 前記金属部材の太さが、前記フィラーの粒径よりも小さい、請求項4記載の半導体装置。
- 請求項1〜5のいずれか1項記載の半導体装置を備える電子機器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015176505A JP6565509B2 (ja) | 2015-09-08 | 2015-09-08 | 半導体装置及びそれを用いた電子機器 |
US15/258,654 US10319656B2 (en) | 2015-09-08 | 2016-09-07 | Semiconductor device and electronic apparatus encapsulated in resin with embedded filler particles |
CN201610807794.1A CN106505049B (zh) | 2015-09-08 | 2016-09-07 | 半导体装置以及使用该半导体装置的电子设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015176505A JP6565509B2 (ja) | 2015-09-08 | 2015-09-08 | 半導体装置及びそれを用いた電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017054875A true JP2017054875A (ja) | 2017-03-16 |
JP6565509B2 JP6565509B2 (ja) | 2019-08-28 |
Family
ID=58189609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015176505A Active JP6565509B2 (ja) | 2015-09-08 | 2015-09-08 | 半導体装置及びそれを用いた電子機器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10319656B2 (ja) |
JP (1) | JP6565509B2 (ja) |
CN (1) | CN106505049B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111696952A (zh) * | 2019-03-13 | 2020-09-22 | 住友电工光电子器件创新株式会社 | 微波集成电路 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001185660A (ja) * | 1999-12-27 | 2001-07-06 | Oki Electric Ind Co Ltd | 封止用樹脂、樹脂封止型半導体装置及びその製造方法 |
JP2005236277A (ja) * | 2004-01-22 | 2005-09-02 | Kawasaki Microelectronics Kk | 半導体集積回路 |
JP2006339406A (ja) * | 2005-06-02 | 2006-12-14 | Renesas Technology Corp | 半導体装置 |
JP2007035686A (ja) * | 2005-07-22 | 2007-02-08 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2009141064A (ja) * | 2007-12-05 | 2009-06-25 | Renesas Technology Corp | 半導体装置 |
JP2010045116A (ja) * | 2008-08-11 | 2010-02-25 | Toppan Printing Co Ltd | 電源装置及び不揮発性メモリ装置 |
JP2010141271A (ja) * | 2008-12-15 | 2010-06-24 | Toshiba Corp | 半導体装置 |
JP2011091130A (ja) * | 2009-10-21 | 2011-05-06 | Sony Corp | 半導体装置 |
JP2012033837A (ja) * | 2010-08-03 | 2012-02-16 | Sanken Electric Co Ltd | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2767843B2 (ja) | 1988-12-15 | 1998-06-18 | 日本電気株式会社 | アナログ・ディジタル混在集積回路 |
US6459156B1 (en) * | 1999-12-22 | 2002-10-01 | Motorola, Inc. | Semiconductor device, a process for a semiconductor device, and a process for making a masking database |
JP3819670B2 (ja) * | 2000-04-14 | 2006-09-13 | 富士通株式会社 | ダマシン配線を有する半導体装置 |
JP2002353381A (ja) | 2001-05-28 | 2002-12-06 | Fuji Electric Co Ltd | 半導体集積回路装置およびその製造方法 |
JP2004253574A (ja) | 2003-02-19 | 2004-09-09 | Fuji Electric Holdings Co Ltd | 半導体装置 |
JP2008034676A (ja) | 2006-07-31 | 2008-02-14 | Sharp Corp | 半導体装置 |
US8643149B2 (en) * | 2009-03-03 | 2014-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress barrier structures for semiconductor chips |
JP5601566B2 (ja) | 2010-01-28 | 2014-10-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8659126B2 (en) * | 2011-12-07 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit ground shielding structure |
US9196559B2 (en) * | 2013-03-08 | 2015-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Directly sawing wafers covered with liquid molding compound |
US9373585B2 (en) * | 2014-09-17 | 2016-06-21 | Invensas Corporation | Polymer member based interconnect |
-
2015
- 2015-09-08 JP JP2015176505A patent/JP6565509B2/ja active Active
-
2016
- 2016-09-07 US US15/258,654 patent/US10319656B2/en active Active
- 2016-09-07 CN CN201610807794.1A patent/CN106505049B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001185660A (ja) * | 1999-12-27 | 2001-07-06 | Oki Electric Ind Co Ltd | 封止用樹脂、樹脂封止型半導体装置及びその製造方法 |
JP2005236277A (ja) * | 2004-01-22 | 2005-09-02 | Kawasaki Microelectronics Kk | 半導体集積回路 |
JP2006339406A (ja) * | 2005-06-02 | 2006-12-14 | Renesas Technology Corp | 半導体装置 |
JP2007035686A (ja) * | 2005-07-22 | 2007-02-08 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2009141064A (ja) * | 2007-12-05 | 2009-06-25 | Renesas Technology Corp | 半導体装置 |
JP2010045116A (ja) * | 2008-08-11 | 2010-02-25 | Toppan Printing Co Ltd | 電源装置及び不揮発性メモリ装置 |
JP2010141271A (ja) * | 2008-12-15 | 2010-06-24 | Toshiba Corp | 半導体装置 |
JP2011091130A (ja) * | 2009-10-21 | 2011-05-06 | Sony Corp | 半導体装置 |
JP2012033837A (ja) * | 2010-08-03 | 2012-02-16 | Sanken Electric Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20170069557A1 (en) | 2017-03-09 |
US10319656B2 (en) | 2019-06-11 |
CN106505049A (zh) | 2017-03-15 |
CN106505049B (zh) | 2022-07-26 |
JP6565509B2 (ja) | 2019-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9209131B2 (en) | Toroid inductor in redistribution layers (RDL) of an integrated device | |
US20200152564A1 (en) | Through-hole electrode substrate | |
US9613920B2 (en) | Microelectronic package utilizing multiple bumpless build-up structures and through-silicon vias | |
US9159670B2 (en) | Ultra fine pitch and spacing interconnects for substrate | |
US9679873B2 (en) | Low profile integrated circuit (IC) package comprising a plurality of dies | |
US20160141234A1 (en) | Integrated device package comprising silicon bridge in photo imageable layer | |
US8772951B1 (en) | Ultra fine pitch and spacing interconnects for substrate | |
US10622292B2 (en) | High density interconnects in an embedded trace substrate (ETS) comprising a core layer | |
CN109560056A (zh) | 集成电路封装 | |
JP2006228770A (ja) | 半導体装置 | |
US10916494B2 (en) | Device comprising first solder interconnects aligned in a first direction and second solder interconnects aligned in a second direction | |
JP6565509B2 (ja) | 半導体装置及びそれを用いた電子機器 | |
US20120097910A1 (en) | Resistance Element and Inverting Buffer Circuit | |
US9209110B2 (en) | Integrated device comprising wires as vias in an encapsulation layer | |
JP2014207462A (ja) | 半導体装置および半導体モジュール | |
US9362218B2 (en) | Integrated passive device (IPD) on substrate | |
KR20220135237A (ko) | 다이 영역 스플릿을 갖는 열 전도성 패키지 기판을 채용하는 집적 회로 (ic) 패키지들 및 관련 제조 방법들 | |
US9807884B2 (en) | Substrate comprising embedded elongated capacitor | |
JP2008198784A (ja) | 半導体装置 | |
JP2009199468A (ja) | 設計支援装置、プログラム、半導体装置の設計方法、及び半導体装置の製造方法 | |
JP5272052B2 (ja) | 半導体装置 | |
US11145649B2 (en) | Semiconductor devices with low parasitic capacitance | |
Zhao et al. | Electrical chip-board interaction (e-CBI) of wafer level packaging technology | |
US9633959B2 (en) | Integrated circuit die with corner IO pads | |
JP2020004851A (ja) | 半導体装置及び半導体チップ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180829 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190419 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190423 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190611 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190702 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190715 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6565509 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |