JP2017054570A5 - - Google Patents

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Publication number
JP2017054570A5
JP2017054570A5 JP2015179683A JP2015179683A JP2017054570A5 JP 2017054570 A5 JP2017054570 A5 JP 2017054570A5 JP 2015179683 A JP2015179683 A JP 2015179683A JP 2015179683 A JP2015179683 A JP 2015179683A JP 2017054570 A5 JP2017054570 A5 JP 2017054570A5
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JP
Japan
Prior art keywords
word line
semiconductor device
voltage
memory array
pmos transistor
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JP2015179683A
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English (en)
Japanese (ja)
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JP2017054570A (ja
JP6469554B2 (ja
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Priority claimed from JP2015179683A external-priority patent/JP6469554B2/ja
Priority to JP2015179683A priority Critical patent/JP6469554B2/ja
Application filed filed Critical
Priority to US15/212,162 priority patent/US9721647B2/en
Priority to CN201610704791.5A priority patent/CN106531206B/zh
Publication of JP2017054570A publication Critical patent/JP2017054570A/ja
Priority to US15/627,535 priority patent/US10255970B2/en
Publication of JP2017054570A5 publication Critical patent/JP2017054570A5/ja
Priority to US16/145,342 priority patent/US10354722B2/en
Publication of JP6469554B2 publication Critical patent/JP6469554B2/ja
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JP2015179683A 2015-09-11 2015-09-11 半導体装置 Active JP6469554B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015179683A JP6469554B2 (ja) 2015-09-11 2015-09-11 半導体装置
US15/212,162 US9721647B2 (en) 2015-09-11 2016-07-15 Semiconductor device
CN201610704791.5A CN106531206B (zh) 2015-09-11 2016-08-22 半导体器件
US15/627,535 US10255970B2 (en) 2015-09-11 2017-06-20 Semiconductor device
US16/145,342 US10354722B2 (en) 2015-09-11 2018-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015179683A JP6469554B2 (ja) 2015-09-11 2015-09-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2017054570A JP2017054570A (ja) 2017-03-16
JP2017054570A5 true JP2017054570A5 (https=) 2018-06-28
JP6469554B2 JP6469554B2 (ja) 2019-02-13

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ID=58238935

Family Applications (1)

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JP2015179683A Active JP6469554B2 (ja) 2015-09-11 2015-09-11 半導体装置

Country Status (3)

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US (3) US9721647B2 (https=)
JP (1) JP6469554B2 (https=)
CN (1) CN106531206B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6469554B2 (ja) * 2015-09-11 2019-02-13 ルネサスエレクトロニクス株式会社 半導体装置
US9786363B1 (en) * 2016-11-01 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Word-line enable pulse generator, SRAM and method for adjusting word-line enable time of SRAM
US10943645B2 (en) * 2018-07-31 2021-03-09 Taiwan Semiconductor Manufacturing Company, Ltd Memory device with a booster word line
JP7270451B2 (ja) * 2019-04-26 2023-05-10 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法
CN112750479A (zh) * 2019-10-30 2021-05-04 台湾积体电路制造股份有限公司 字线驱动装置
US11189336B2 (en) * 2019-10-30 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Word line driving device for minimizing RC delay
JP2021108307A (ja) * 2019-12-27 2021-07-29 キオクシア株式会社 半導体記憶装置
US11170830B2 (en) * 2020-02-11 2021-11-09 Taiwan Semiconductor Manufacturing Company Limited Word line driver for low voltage operation
US11211113B1 (en) * 2020-08-18 2021-12-28 Micron Technology, Inc. Integrated assemblies comprising wordlines having ends selectively shunted to low voltage for speed transitioning
KR20220058284A (ko) 2020-10-30 2022-05-09 삼성전자주식회사 워드 라인 보조 셀을 갖는 셀 어레이를 포함하는 집적 회로
US11521670B2 (en) * 2020-11-12 2022-12-06 Micron Technology, Inc. Word lines coupled to pull-down transistors, and related devices, systems, and methods
US12525261B2 (en) 2023-05-01 2026-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices with reduced bit line capacitance and methods of manufacturing thereof

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
JPS55150189A (en) 1979-05-10 1980-11-21 Nec Corp Memory circuit
JPS60226095A (ja) * 1984-04-25 1985-11-11 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS63276793A (ja) * 1987-05-07 1988-11-15 Nec Ic Microcomput Syst Ltd ワ−ド線駆動回路
JPH06203579A (ja) * 1993-01-08 1994-07-22 Fujitsu Ltd 出力回路及び記憶装置
JP3908493B2 (ja) * 2001-08-30 2007-04-25 株式会社東芝 電子回路及び半導体記憶装置
JP4439167B2 (ja) * 2002-08-30 2010-03-24 株式会社ルネサステクノロジ 半導体記憶装置
US7064981B2 (en) * 2004-08-04 2006-06-20 Micron Technology, Inc. NAND string wordline delay reduction
JP4912016B2 (ja) * 2005-05-23 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4631743B2 (ja) 2006-02-27 2011-02-16 ソニー株式会社 半導体装置
US7379354B2 (en) * 2006-05-16 2008-05-27 Texas Instruments Incorporated Methods and apparatus to provide voltage control for SRAM write assist circuits
US7733686B2 (en) * 2006-12-30 2010-06-08 Texas Instruments Incorporated Pulse width control for read and write assist for SRAM circuits
US8014226B2 (en) * 2009-12-22 2011-09-06 Arm Limited Integrated circuit memory with word line driving helper circuits
JP2014067942A (ja) * 2012-09-27 2014-04-17 Toshiba Corp 不揮発性半導体記憶装置
JP2014099225A (ja) 2012-11-14 2014-05-29 Renesas Electronics Corp 半導体装置
JP6469554B2 (ja) * 2015-09-11 2019-02-13 ルネサスエレクトロニクス株式会社 半導体装置

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