JP2017050511A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017050511A JP2017050511A JP2015175058A JP2015175058A JP2017050511A JP 2017050511 A JP2017050511 A JP 2017050511A JP 2015175058 A JP2015175058 A JP 2015175058A JP 2015175058 A JP2015175058 A JP 2015175058A JP 2017050511 A JP2017050511 A JP 2017050511A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 150000004767 nitrides Chemical class 0.000 claims abstract description 105
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 abstract description 22
- 230000005669 field effect Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000035515 penetration Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
【解決手段】第1の窒化物半導体層13は、第1の領域13aを有する。第2の窒化物半導体層14は、第1の窒化物半導体層13の上に設けられ、炭素とケイ素とを含む。第3の窒化物半導体層15は、第2の窒化物半導体層14の上に設けられ、第2の領域を有する。第4の窒化物半導体層16は、第3の窒化物半導体層15の上に設けられ、第3の窒化物半導体層15よりもバンドギャップが大きい。ソース電極21は、第4の窒化物半導体層16の上に設けられ、第1の領域13aに電気的に接続されている。ドレイン電極22は、第4の窒化物半導体層16の上に設けられ、第2の領域15aに電気的に接続されている。ゲート電極23は、第4の窒化物半導体層16の上に設けられ、ソース電極21とドレイン電極22との間に挟まれている。
【選択図】図1
Description
図1は、本実施形態に係る半導体装置の概略的な構造を示す断面図である。図1に示すように、本実施形態に係る半導体装置1は、導電性基板11と、バッファ層12と、第1の窒化物半導体層13と、第2の窒化物半導体層14と、第3の窒化物半導体層15と、第4の窒化物半導体層16と、第1の貫通電極17と、第2の貫通電極18と、を備える。
第2の実施形態について、第1の実施形態と異なる点を中心に説明する。図7は、第2の実施形態に係る半導体装置の概略的な構造を示す断面図である。以下、上述した第1の実施形態と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
Claims (7)
- 第1の領域を有する第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に設けられ、炭素とケイ素とを含む第2の窒化物半導体層と、
前記第2の窒化物半導体層の上に設けられ、第2の領域を有する第3の窒化物半導体層と、
前記第3の窒化物半導体層の上に設けられ、前記第3の窒化物半導体層よりもバンドギャップが大きい第4の窒化物半導体層と、
前記第4の窒化物半導体層の上に設けられ、前記第1の領域に電気的に接続されたソース電極と、
前記第4の窒化物半導体層の上に設けられ、前記第2の領域に電気的に接続されたドレイン電極と、
前記第4の窒化物半導体層の上に設けられ、前記ソース電極と前記ドレイン電極との間に挟まれたゲート電極と、
を備える半導体装置。 - 前記第1の窒化物半導体層および前記第3の窒化物半導体層が、窒化ガリウム層で構成され、かつ、前記第2の窒化物半導体層が、前記炭素と前記ケイ素とが含まれた窒化ガリウム層で構成されている、請求項1に記載の半導体装置。
- 前記第1の領域と、前記第2の領域と、前記第1の領域と前記第2の領域との間における前記第2の窒化物半導体層の一部と、を囲む電気絶縁領域をさらに備える、請求項1または2に記載の半導体装置。
- 前記第1の領域と前記第2の領域が、互いに対向している、請求項1から3のいずれかに記載の半導体装置。
- 導電性基板と、
前記導電性基板と前記第1の窒化物半導体層との間に設けられ、前記導電性基板よりも電気抵抗が大きいバッファ層と、
をさらに備える、請求項1から4のいずれかに記載の半導体装置。 - 前記導電性基板と前記バッファ層とを貫通し、前記第1の領域と前記ソース電極とを電気的に接続する第1の貫通電極と、
前記第4の窒化物半導体層を貫通し、前記第2の領域と前記ドレイン電極とを電気的に接続する第2の貫通電極と、
をさらに備える、請求項5に記載の半導体装置。 - 前記第2の貫通電極が、前記ドレイン電極の直下に設けられている、請求項6に記載の半導体装置。
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