JP2017034073A - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
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- JP2017034073A JP2017034073A JP2015152164A JP2015152164A JP2017034073A JP 2017034073 A JP2017034073 A JP 2017034073A JP 2015152164 A JP2015152164 A JP 2015152164A JP 2015152164 A JP2015152164 A JP 2015152164A JP 2017034073 A JP2017034073 A JP 2017034073A
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- insulating layer
- semiconductor
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- fin
- memory device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 164
- 230000015654 memory Effects 0.000 claims abstract description 61
- 238000003860 storage Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 270
- 239000000463 material Substances 0.000 description 14
- 230000006870 function Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 229910052735 hafnium Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- -1 lanthanum aluminum silicon Chemical compound 0.000 description 7
- 238000007667 floating Methods 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 4
- 229910003468 tantalcarbide Inorganic materials 0.000 description 4
- QUOQJNYANJQSDA-MHQSSNGYSA-N Sialyllacto-N-tetraose a Chemical compound O1C([C@H](O)[C@H](O)CO)[C@H](NC(=O)C)[C@@H](O)C[C@@]1(C(O)=O)O[C@@H]1[C@@H](O)[C@H](OC2[C@H]([C@H](OC3[C@H]([C@H](O[C@H]([C@H](O)CO)[C@H](O)[C@@H](O)C=O)O[C@H](CO)[C@@H]3O)O)O[C@H](CO)[C@H]2O)NC(C)=O)O[C@H](CO)[C@@H]1O QUOQJNYANJQSDA-MHQSSNGYSA-N 0.000 description 3
- SFMRPVLZMVJKGZ-JRZQLMJNSA-N Sialyllacto-N-tetraose b Chemical compound O1[C@@H]([C@H](O)[C@H](O)CO)[C@H](NC(=O)C)[C@@H](O)C[C@@]1(C(O)=O)OC[C@@H]1[C@@H](O)[C@H](O[C@H]2[C@@H]([C@@H](O)[C@@H](O)[C@@H](CO)O2)O)[C@@H](NC(C)=O)[C@H](O[C@@H]2[C@H]([C@H](O[C@H]([C@H](O)CO)[C@H](O)[C@@H](O)C=O)O[C@H](CO)[C@@H]2O)O)O1 SFMRPVLZMVJKGZ-JRZQLMJNSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 241000588731 Hafnia Species 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- UZQSJWBBQOJUOT-UHFFFAOYSA-N alumane;lanthanum Chemical compound [AlH3].[La] UZQSJWBBQOJUOT-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/31051—Planarisation of the insulating layers
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Abstract
【解決手段】実施例に係わる不揮発性半導体記憶装置は、第1の方向に、第1の絶縁層、半導体層、及び、第2の絶縁層の順で積み重ねられ、かつ、第2の方向に延びる第1の構造と、第3の方向に面する半導体層の表面上に配置され、第2の方向に直列接続される複数のメモリセルと、第1の構造の第2の方向の第1及び第2の端部の少なくとも1つに接触し、かつ、第1及び第2の端部間の領域の少なくとも一部を覆わない第3の絶縁層と、を備える。第2の方向における半導体層内の半導体原子の格子間隔は、第1の方向における半導体層内の半導体原子の格子間隔よりも大きい。
【選択図】図1
Description
図1は、不揮発性半導体記憶装置の平面図である。図2は、図1のII−II線に沿う断面図である。
第2の実施例は、第1の実施例において、メモリセルの構造を具体化する例である。
図4は、不揮発性半導体記憶装置の斜視図である。
次に、図4乃至図6の構造の各要素を構成する材料例を説明する。
図4の構造を製造する方法の例を説明する。
第3の実施例は、第1及び第2の実施例における第1の構造(フィン構造)Finのレイアウトに関する。以下の説明において、第1の構造Finは、第1及び第2の実施例における第1の構造Finに対応し、絶縁層6は、第1及び第2の実施例における絶縁層6に対応する。
上述の第1乃至第3の実施例を、例えば、VLB (Vertical gate ladder-Bit cost scalable memory)に適用した場合を説明する。
以上、実施形態によれば、三次元不揮発性半導体記憶装置において、メモリセルのオン電流を向上させることができる。
Claims (5)
- 第1の方向に、第1の絶縁層、半導体層、及び、第2の絶縁層の順で積み重ねられ、かつ、前記第1の方向に交差する第2の方向に延びる第1の構造と、前記第1及び第2の方向に交差する第3の方向に面する前記半導体層の表面上に配置され、前記第2の方向に直列接続される複数のメモリセルと、前記第2の方向における前記第1の構造の第1及び第2の端部の少なくとも1つに接触し、かつ、前記第1及び第2の端部間の領域の少なくとも一部を覆わない第3の絶縁層と、を具備し、
前記第2の方向における前記半導体層内の半導体原子の格子間隔は、前記第1の方向における前記半導体層内の半導体原子の格子間隔よりも大きい、
不揮発性半導体記憶装置。 - 第1の方向に、第1の絶縁層、半導体層、及び、第2の絶縁層の順で積み重ねられ、かつ、前記第1の方向に交差する第2の方向に延びる第1の構造と、前記第1及び第2の方向に交差する第3の方向に面する前記半導体層の表面上に配置され、前記第2の方向に直列接続される複数のメモリセルと、前記第2の方向における前記第1の構造の第1及び第2の端部の少なくとも1つに接触し、かつ、前記第1及び第2の端部間の領域の少なくとも一部を覆わない第3の絶縁層と、を具備し、
前記第1及び第2の絶縁層は、酸化シリコンを備え、前記第3の絶縁層は、窒化シリコン及び炭化シリコンのうちの少なくともいずれかを備える、
不揮発性半導体記憶装置。 - 表面を有する半導体基板をさらに具備し、
前記第1の構造は、前記表面上に配置され、前記第1の方向は、前記表面に垂直な方向であり、前記第2及び第3の方向は、前記表面に平行な方向であり、
前記半導体基板及び前記半導体層は、シリコン原子を含み、前記第2の方向において、前記半導体層内の前記シリコン原子の格子間隔は、前記半導体基板内の前記シリコン原子の格子間隔よりも大きく、前記第1の方向において、前記半導体層内の前記シリコン原子の格子間隔は、前記半導体基板内の前記シリコン原子の格子間隔よりも小さい、
請求項1又は2に記載の不揮発性半導体記憶装置。 - 前記第1及び第2の絶縁層は、シリコンと酸素の割合が1:x(xは2より大きい数)の酸化シリコンを備える、請求項1乃至3のいずれか1項に記載の不揮発性半導体記憶装置。
- 第1の方向に、第1の絶縁層、第1の半導体層、及び、第2の絶縁層の順で積み重ねられ、前記第1の方向に交差する第2の方向に延び、かつ、前記第1及び第2の方向に交差する第3の方向に並ぶ複数の第1の構造と、前記第3の方向に面する前記複数の第1の構造の表面上にそれぞれ配置され、各々が前記第2の方向に直列接続される複数のメモリセルを備える、複数のセルユニットと、前記第2の方向における前記複数の第1の構造の複数の第1の端部又は複数の第2の端部に接触し、前記第1の方向に、第3の絶縁層、第2の半導体層、及び、第4の絶縁層の順で積み重ねられ、これらの第3の絶縁層、第2の半導体層、及び、第4の絶縁層はそれぞれ前記第1の絶縁層、前記第1の半導体層、及び、前記第2の絶縁層に接続された第2の構造と、前記第2の方向における前記第2の構造の第3の端部に接触し、前記複数の第1の端部と前記複数の第2の端部との間の領域の少なくとも一部を覆わない、第3の絶縁層と、を具備する、不揮発性半導体記憶装置。
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