JP2017005236A5 - - Google Patents
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- JP2017005236A5 JP2017005236A5 JP2015178990A JP2015178990A JP2017005236A5 JP 2017005236 A5 JP2017005236 A5 JP 2017005236A5 JP 2015178990 A JP2015178990 A JP 2015178990A JP 2015178990 A JP2015178990 A JP 2015178990A JP 2017005236 A5 JP2017005236 A5 JP 2017005236A5
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- JP
- Japan
- Prior art keywords
- semiconductor layer
- type semiconductor
- formed over
- pmc
- depletion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 description 3
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015114375 | 2015-06-05 | ||
JP2015114375 | 2015-06-05 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017005236A JP2017005236A (ja) | 2017-01-05 |
JP2017005236A5 true JP2017005236A5 (pl) | 2017-12-28 |
JP6485299B2 JP6485299B2 (ja) | 2019-03-20 |
Family
ID=57754413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015178990A Active JP6485299B2 (ja) | 2015-06-05 | 2015-09-11 | 半導体装置およびその製造方法ならびに電力変換装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6485299B2 (pl) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6485383B2 (ja) | 2016-02-23 | 2019-03-20 | 株式会社デンソー | 化合物半導体装置およびその製造方法 |
JP6927112B2 (ja) * | 2018-03-27 | 2021-08-25 | 豊田合成株式会社 | 半導体装置の製造方法 |
JP6927116B2 (ja) * | 2018-03-28 | 2021-08-25 | 豊田合成株式会社 | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100225409B1 (ko) * | 1997-03-27 | 1999-10-15 | 김덕중 | 트렌치 디-모오스 및 그의 제조 방법 |
CN1248288C (zh) * | 2000-02-09 | 2006-03-29 | 北卡罗来纳州大学 | 制造氮化镓半导体层和相关结构的方法 |
KR100473476B1 (ko) * | 2002-07-04 | 2005-03-10 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
US7989882B2 (en) * | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
JP5721308B2 (ja) * | 2008-03-26 | 2015-05-20 | ローム株式会社 | 半導体装置 |
JP5442229B2 (ja) * | 2008-09-04 | 2014-03-12 | ローム株式会社 | 窒化物半導体素子の製造方法 |
JP5884617B2 (ja) * | 2012-04-19 | 2016-03-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP6041726B2 (ja) * | 2013-03-26 | 2016-12-14 | 三菱電機株式会社 | 電力変換装置及び空気調和装置 |
JP6107597B2 (ja) * | 2013-03-26 | 2017-04-05 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
JP6048317B2 (ja) * | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
WO2015072052A1 (ja) * | 2013-11-13 | 2015-05-21 | 三菱電機株式会社 | 半導体装置 |
-
2015
- 2015-09-11 JP JP2015178990A patent/JP6485299B2/ja active Active
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