JP2016534344A5 - - Google Patents

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JP2016534344A5
JP2016534344A5 JP2016535373A JP2016535373A JP2016534344A5 JP 2016534344 A5 JP2016534344 A5 JP 2016534344A5 JP 2016535373 A JP2016535373 A JP 2016535373A JP 2016535373 A JP2016535373 A JP 2016535373A JP 2016534344 A5 JP2016534344 A5 JP 2016534344A5
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Japan
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frequency
signal
sample
specific
phase shift
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JP2016535373A
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Japanese (ja)
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JP6616302B2 (ja
JP2016534344A (ja
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Priority claimed from EP13181506.0A external-priority patent/EP2840387A1/en
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JP2016535373A 2013-08-23 2014-05-30 ホットスポット位置特定のためのロックインサーモグラフィ方法およびシステム Active JP6616302B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13181506.0 2013-08-23
EP13181506.0A EP2840387A1 (en) 2013-08-23 2013-08-23 Lock-in thermography method and system for hot spot localization
PCT/EP2014/061232 WO2015024679A1 (en) 2013-08-23 2014-05-30 Lock-in thermography method and system for hot spot localization

Publications (3)

Publication Number Publication Date
JP2016534344A JP2016534344A (ja) 2016-11-04
JP2016534344A5 true JP2016534344A5 (enExample) 2017-08-17
JP6616302B2 JP6616302B2 (ja) 2019-12-04

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JP2016535373A Active JP6616302B2 (ja) 2013-08-23 2014-05-30 ホットスポット位置特定のためのロックインサーモグラフィ方法およびシステム

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US (1) US20160202126A1 (enExample)
EP (1) EP2840387A1 (enExample)
JP (1) JP6616302B2 (enExample)
DE (1) DE112014003881T5 (enExample)
SG (1) SG11201600524YA (enExample)
TW (1) TWI563251B (enExample)
WO (1) WO2015024679A1 (enExample)

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DE102014218136B4 (de) * 2014-09-10 2019-07-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thermographische Untersuchungseinrichtung sowie Verfahren zur zerstörungsfreien Untersuchung einer oberflächennahen Struktur an einem Prüfobjekt
CN104776918B (zh) * 2015-03-30 2018-06-08 中国人民解放军第二炮兵工程大学 一种相位提取方法
CN104916120B (zh) * 2015-06-12 2018-11-06 深圳市共进电子股份有限公司 一种智能红外发射设备的自动化生产测试系统及方法
EP3282249A1 (de) 2016-08-09 2018-02-14 Saint-Gobain Glass France Verfahren und vorrichtung zur detektion von gasen in kunststoffschichten durch lock-in-infrarotthermographie
JP2018096776A (ja) * 2016-12-12 2018-06-21 国立研究開発法人産業技術総合研究所 導電材料の内部構造、電流分布、抵抗分布を可視化する装置と方法
JP2019193417A (ja) * 2018-04-24 2019-10-31 学校法人日本大学 領域抽出装置
US10607104B1 (en) * 2019-01-31 2020-03-31 Raytheon Company System and method for detecting daytime solar glint using multi-band mid-wave infrared imagery
JP7554052B2 (ja) 2020-01-31 2024-09-19 浜松ホトニクス株式会社 半導体故障解析装置
CN111665403B (zh) * 2020-04-29 2022-12-23 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 层叠型电子元件的失效点定位方法、装置和系统
JP7579852B2 (ja) * 2020-05-26 2024-11-08 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
CN115667955A (zh) * 2020-05-26 2023-01-31 浜松光子学株式会社 半导体器件检查方法及半导体器件检查装置
CN111898333B (zh) * 2020-06-24 2021-12-10 北京智芯仿真科技有限公司 集成电路频率响应频率点提取与响应曲线计算方法及装置
ES2932781A1 (es) * 2021-07-19 2023-01-25 Consejo Superior Investigacion Metodo para la medida cuantitativa de temperatura
US20250076231A1 (en) * 2022-03-15 2025-03-06 Nippon Telegraph And Telephone Corporation Monitoring device
CN114858285A (zh) * 2022-04-02 2022-08-05 电子科技大学 一种线性调频红外无损检测系统
CN115541653A (zh) * 2022-12-02 2022-12-30 山东大学 一种3d系统级封装器件的缺陷定位方法及系统
CN117538378B (zh) * 2023-11-24 2024-06-28 山东大学 一种基于方波热源的锁相热成像缺陷快速检测方法
CN119290952A (zh) * 2024-08-29 2025-01-10 北京微电子技术研究所 一种叠层封装半导体器件缺陷检测与定位方法、系统
CN119827576B (zh) * 2024-11-25 2025-10-17 江苏大学 一种基于调频式红外热成像检测复合材料内部缺陷深度的方法

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US4792683A (en) * 1987-01-16 1988-12-20 Hughes Aircraft Company Thermal technique for simultaneous testing of circuit board solder joints
JP2758488B2 (ja) * 1990-07-25 1998-05-28 周次 仲田 電子部品の接合部検査装置
DE19837889C1 (de) * 1998-08-20 2000-12-21 Siemens Ag Thermowellen-Meßverfahren
US6394646B1 (en) * 1999-04-16 2002-05-28 General Electric Company Method and apparatus for quantitative nondestructive evaluation of metal airfoils using high resolution transient thermography
US7709794B2 (en) * 2008-02-05 2010-05-04 Kla-Tencor Corporation Defect detection using time delay lock-in thermography (LIT) and dark field LIT
JP5631484B2 (ja) * 2010-06-08 2014-11-26 ディーシージー システムズ、 インコーポライテッドＤｃｇ Ｓｙｓｔｅｍｓ Ｉｎｃ． ３次元ホットスポット位置特定
EP2444795A1 (en) * 2010-10-22 2012-04-25 DCG Systems, Inc. Lock in thermal laser stimulation through one side of the device while acquiring lock-in thermal emission images on the opposite side

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