JP2016507896A - 化学機械研磨装置及び方法 - Google Patents

化学機械研磨装置及び方法 Download PDF

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Publication number
JP2016507896A
JP2016507896A JP2015552659A JP2015552659A JP2016507896A JP 2016507896 A JP2016507896 A JP 2016507896A JP 2015552659 A JP2015552659 A JP 2015552659A JP 2015552659 A JP2015552659 A JP 2015552659A JP 2016507896 A JP2016507896 A JP 2016507896A
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JP
Japan
Prior art keywords
substrate
polishing
slurry
zones
slurry component
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Pending
Application number
JP2015552659A
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English (en)
Japanese (ja)
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JP2016507896A5 (https=
Inventor
ラジーブ バジャージ，
ラジーブ バジャージ，
トーマス エイチ． オスターヘルド，
トーマス エイチ． オスターヘルド，
フン チェン，
フン チェン，
テランス ワイ． リー，
テランス ワイ． リー，
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016507896A publication Critical patent/JP2016507896A/ja
Publication of JP2016507896A5 publication Critical patent/JP2016507896A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP2015552659A 2013-01-11 2013-12-30 化学機械研磨装置及び方法 Pending JP2016507896A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361751688P 2013-01-11 2013-01-11
US61/751,688 2013-01-11
PCT/US2013/078313 WO2014109929A1 (en) 2013-01-11 2013-12-30 Chemical mechanical polishing apparatus and methods

Publications (2)

Publication Number Publication Date
JP2016507896A true JP2016507896A (ja) 2016-03-10
JP2016507896A5 JP2016507896A5 (https=) 2017-02-09

Family

ID=51165467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015552659A Pending JP2016507896A (ja) 2013-01-11 2013-12-30 化学機械研磨装置及び方法

Country Status (6)

Country Link
US (3) US20140199840A1 (https=)
JP (1) JP2016507896A (https=)
KR (2) KR102152964B1 (https=)
CN (2) CN109243976B (https=)
TW (2) TWI692387B (https=)
WO (1) WO2014109929A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140199840A1 (en) * 2013-01-11 2014-07-17 Applied Materials, Inc. Chemical mechanical polishing apparatus and methods
US9962801B2 (en) * 2014-01-07 2018-05-08 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for performing chemical mechanical planarization
US20160027668A1 (en) * 2014-07-25 2016-01-28 Applied Materials, Inc. Chemical mechanical polishing apparatus and methods
US10124464B2 (en) 2014-10-21 2018-11-13 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
US9688885B2 (en) 2014-10-21 2017-06-27 Cabot Microelectronics Corporation Cobalt polishing accelerators
KR102525356B1 (ko) * 2014-10-21 2023-04-25 씨엠씨 머티리얼즈, 인코포레이티드 코발트 파임 제어제
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
KR102493016B1 (ko) * 2015-12-31 2023-01-31 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
US10875149B2 (en) * 2017-03-30 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for timed dispensing various slurry components
US11697183B2 (en) * 2018-07-26 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fabrication of a polishing pad for chemical mechanical polishing
US12017322B2 (en) * 2018-08-14 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method
US12444610B2 (en) 2018-11-15 2025-10-14 Tokyo Electron Limited Methods for etching a substrate using a hybrid wet atomic layer etching process
US11437250B2 (en) * 2018-11-15 2022-09-06 Tokyo Electron Limited Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions
US12243752B2 (en) 2018-11-15 2025-03-04 Tokyo Electron Limited Systems for etching a substrate using a hybrid wet atomic layer etching process
JP7152279B2 (ja) * 2018-11-30 2022-10-12 株式会社荏原製作所 研磨装置
JP1651619S (https=) * 2019-07-11 2020-01-27
JP1651618S (https=) * 2019-07-11 2020-01-27
JP1651623S (https=) * 2019-07-18 2020-01-27
US11693435B2 (en) * 2020-06-25 2023-07-04 Applied Materials, Inc. Ethercat liquid flow controller communication for substrate processing systems
US11915941B2 (en) 2021-02-11 2024-02-27 Tokyo Electron Limited Dynamically adjusted purge timing in wet atomic layer etching
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
US12506014B2 (en) 2021-10-19 2025-12-23 Tokyo Electron Limited Methods for non-isothermal wet atomic layer etching
US11802342B2 (en) 2021-10-19 2023-10-31 Tokyo Electron Limited Methods for wet atomic layer etching of ruthenium
US11866831B2 (en) 2021-11-09 2024-01-09 Tokyo Electron Limited Methods for wet atomic layer etching of copper
US12506011B2 (en) 2023-12-15 2025-12-23 Tokyo Electron Limited Methods for wet atomic layer etching of transition metal oxide dielectric materials
US12521840B2 (en) * 2024-03-07 2026-01-13 Wolfspeed, Inc. Two component chemical mechanical polishing

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000308957A (ja) * 1999-04-06 2000-11-07 Lucent Technol Inc 研磨スラリーを連続的に供給し、調整するための装置および方法
US6248006B1 (en) * 2000-01-24 2001-06-19 Chartered Semiconductor Manufacturing Ltd. CMP uniformity
US20030148712A1 (en) * 2002-02-01 2003-08-07 Chartered Semiconductor Manufacturing Ltd. Multiple step CMP polishing
JP2004511109A (ja) * 2000-10-06 2004-04-08 ラム　リサーチ　コーポレーション 活性スラリによるｃｍｐシステムおよびｃｍｐシステムの実装方法
US20050272348A1 (en) * 2004-06-04 2005-12-08 Chung-Ki Min Polishing pad assembly, apparatus for polishing a wafer including the polishing pad assembly and method for polishing a wafer using the polishing pad assembly
US20090163114A1 (en) * 2007-12-19 2009-06-25 Advanced Technology Development Facility, Inc. Systems and Methods for Dynamic Slurry Blending and Control
JP2012076220A (ja) * 2010-09-09 2012-04-19 Ngk Insulators Ltd 被研磨物の研磨方法、及び研磨パッド

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540810A (en) * 1992-12-11 1996-07-30 Micron Technology Inc. IC mechanical planarization process incorporating two slurry compositions for faster material removal times
US5329734A (en) 1993-04-30 1994-07-19 Motorola, Inc. Polishing pads used to chemical-mechanical polish a semiconductor substrate
JP3734289B2 (ja) * 1995-01-24 2006-01-11 株式会社荏原製作所 ポリッシング装置
JP3311203B2 (ja) * 1995-06-13 2002-08-05 株式会社東芝 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法
US5868608A (en) * 1996-08-13 1999-02-09 Lsi Logic Corporation Subsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatus
JP3672685B2 (ja) * 1996-11-29 2005-07-20 松下電器産業株式会社 研磨方法及び研磨装置
US6273806B1 (en) * 1997-05-15 2001-08-14 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US6139406A (en) * 1997-06-24 2000-10-31 Applied Materials, Inc. Combined slurry dispenser and rinse arm and method of operation
US5899745A (en) 1997-07-03 1999-05-04 Motorola, Inc. Method of chemical mechanical polishing (CMP) using an underpad with different compression regions and polishing pad therefor
US5816900A (en) * 1997-07-17 1998-10-06 Lsi Logic Corporation Apparatus for polishing a substrate at radially varying polish rates
US5997392A (en) * 1997-07-22 1999-12-07 International Business Machines Corporation Slurry injection technique for chemical-mechanical polishing
WO1999033612A1 (en) * 1997-12-26 1999-07-08 Ebara Corporation Polishing device
US6436228B1 (en) 1998-05-15 2002-08-20 Applied Materials, Inc. Substrate retainer
KR20000025003A (ko) 1998-10-07 2000-05-06 윤종용 반도체 기판의 화학 기계적 연마에 사용되는 연마 패드
JP2000176829A (ja) 1998-12-18 2000-06-27 Tdk Corp 研磨装置
US6395194B1 (en) * 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
JP2000216120A (ja) * 1999-01-27 2000-08-04 Mitsubishi Electric Corp 研磨装置およびこれを用いた半導体装置の製造方法
US6429131B2 (en) * 1999-03-18 2002-08-06 Infineon Technologies Ag CMP uniformity
US6283840B1 (en) 1999-08-03 2001-09-04 Applied Materials, Inc. Cleaning and slurry distribution system assembly for use in chemical mechanical polishing apparatus
US6284092B1 (en) * 1999-08-06 2001-09-04 International Business Machines Corporation CMP slurry atomization slurry dispense system
US6348124B1 (en) * 1999-12-14 2002-02-19 Applied Materials, Inc. Delivery of polishing agents in a wafer processing system
US7041599B1 (en) 1999-12-21 2006-05-09 Applied Materials Inc. High through-put Cu CMP with significantly reduced erosion and dishing
US6979248B2 (en) * 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6514863B1 (en) * 2000-02-25 2003-02-04 Vitesse Semiconductor Corporation Method and apparatus for slurry distribution profile control in chemical-mechanical planarization
US20030168169A1 (en) * 2000-08-03 2003-09-11 Akira Ishikawa Chemical-mechanical polishing apparatus, polishing pad and method for manufacturing semiconductor device
US6726534B1 (en) * 2001-03-01 2004-04-27 Cabot Microelectronics Corporation Preequilibrium polishing method and system
US6398627B1 (en) * 2001-03-22 2002-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispenser having multiple adjustable nozzles
US6572445B2 (en) * 2001-05-16 2003-06-03 Speedfam-Ipec Multizone slurry delivery for chemical mechanical polishing tool
US20030027505A1 (en) * 2001-08-02 2003-02-06 Applied Materials, Inc. Multiport polishing fluid delivery system
US7086933B2 (en) * 2002-04-22 2006-08-08 Applied Materials, Inc. Flexible polishing fluid delivery system
JP4057803B2 (ja) * 2001-09-11 2008-03-05 株式会社東芝 半導体装置の製造方法
US7314402B2 (en) * 2001-11-15 2008-01-01 Speedfam-Ipec Corporation Method and apparatus for controlling slurry distribution
US6858436B2 (en) * 2002-04-30 2005-02-22 Motorola, Inc. Near-field transform spectroscopy
US20040011462A1 (en) * 2002-06-28 2004-01-22 Lam Research Corporation Method and apparatus for applying differential removal rates to a surface of a substrate
US7166015B2 (en) * 2002-06-28 2007-01-23 Lam Research Corporation Apparatus and method for controlling fluid material composition on a polishing pad
TWI300026B (en) * 2002-08-02 2008-08-21 Applied Materials Inc Conductive polishing article for electrochemical mechanical polishing
US7040957B2 (en) * 2002-08-14 2006-05-09 Novellus Systems Inc. Platen and manifold for polishing workpieces
DE10261465B4 (de) * 2002-12-31 2013-03-21 Advanced Micro Devices, Inc. Anordnung zum chemisch-mechanischen Polieren mit einem verbesserten Konditionierwerkzeug
US6875086B2 (en) * 2003-01-10 2005-04-05 Intel Corporation Surface planarization
JP2004288727A (ja) * 2003-03-19 2004-10-14 Seiko Epson Corp Ｃｍｐ装置、ｃｍｐ研磨方法、半導体装置及びその製造方法
US6984166B2 (en) * 2003-08-01 2006-01-10 Chartered Semiconductor Manufacturing Ltd. Zone polishing using variable slurry solid content
US6872128B1 (en) * 2003-09-30 2005-03-29 Lam Research Corporation System, method and apparatus for applying liquid to a CMP polishing pad
US6929533B2 (en) 2003-10-08 2005-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Methods for enhancing within-wafer CMP uniformity
JP3917578B2 (ja) * 2003-10-30 2007-05-23 株式会社東芝 半導体装置の製造方法及び製造装置
US20050164603A1 (en) * 2004-01-22 2005-07-28 House Colby J. Pivotable slurry arm
KR20070001955A (ko) * 2004-01-26 2007-01-04 티비더블유 인더스트리즈, 인코포레이티드 화학적 연마를 위한 다단계 패드 처리 시스템 및 방법
JP2005217037A (ja) * 2004-01-28 2005-08-11 Asahi Sunac Corp 半導体ウェーハ用研磨パッドのコンディショニング方法
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7255771B2 (en) 2004-03-26 2007-08-14 Applied Materials, Inc. Multiple zone carrier head with flexible membrane
US20060025049A1 (en) * 2004-07-30 2006-02-02 Applied Materials, Inc. Spray slurry delivery system for polish performance improvement and cost reduction
WO2006022452A2 (en) * 2004-08-27 2006-03-02 Ebara Corporation Polishing apparatus and polishing method
US20060191871A1 (en) * 2005-02-25 2006-08-31 Sheng-Yu Chen Cmp slurry delivery system and method of mixing slurry thereof
US7052374B1 (en) * 2005-03-01 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Multipurpose slurry delivery arm for chemical mechanical polishing
JP2006261261A (ja) 2005-03-16 2006-09-28 Renesas Technology Corp 化学機械研磨装置および化学機械研磨方法
KR100727484B1 (ko) * 2005-07-28 2007-06-13 삼성전자주식회사 화학기계적 연마 장치 및 패드 컨디셔닝 방법
JP4787063B2 (ja) * 2005-12-09 2011-10-05 株式会社荏原製作所 研磨装置及び研磨方法
KR20070098321A (ko) 2006-03-31 2007-10-05 주식회사 하이닉스반도체 화학적 기계적 연마 장치
JP2007268678A (ja) * 2006-03-31 2007-10-18 Elpida Memory Inc 研磨装置及び研磨装置の制御方法
DE102006056623A1 (de) * 2006-11-30 2008-06-05 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System zum Steuern des chemisch-mechanischen Polierens durch steuerbares Bewegen eines Schleifmittelauslasses
US8128461B1 (en) * 2008-06-16 2012-03-06 Novellus Systems, Inc. Chemical mechanical polishing with multi-zone slurry delivery
US8414357B2 (en) * 2008-08-22 2013-04-09 Applied Materials, Inc. Chemical mechanical polisher having movable slurry dispensers and method
US8210900B2 (en) * 2008-10-31 2012-07-03 Applied Materials, Inc. Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery
US8523639B2 (en) * 2008-10-31 2013-09-03 Applied Materials, Inc. Self cleaning and adjustable slurry delivery arm
US8277286B2 (en) * 2009-02-13 2012-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispenser for chemical mechanical polishing (CMP) apparatus and method
US20100216373A1 (en) 2009-02-25 2010-08-26 Araca, Inc. Method for cmp uniformity control
US9425037B2 (en) 2011-01-21 2016-08-23 Cabot Microelectronics Corporation Silicon polishing compositions with improved PSD performance
TWI613037B (zh) * 2011-07-19 2018-02-01 荏原製作所股份有限公司 硏磨方法
KR101257336B1 (ko) * 2012-04-13 2013-04-23 유비머트리얼즈주식회사 연마용 슬러리 및 이를 이용한 기판 연마 방법
US20140199840A1 (en) * 2013-01-11 2014-07-17 Applied Materials, Inc. Chemical mechanical polishing apparatus and methods
US20140199842A1 (en) 2013-01-11 2014-07-17 Applied Materials, Inc. Chemical mechanical polishing process and slurry containing silicon nanoparticles
US20140315381A1 (en) 2013-04-19 2014-10-23 Applied Materials, Inc. Interconnect fabrication at an integrated semiconductor processing station
US20150021498A1 (en) 2013-07-17 2015-01-22 Applied Materials, Inc. Chemical mechanical polishing retaining ring methods and apparatus
US20160027668A1 (en) * 2014-07-25 2016-01-28 Applied Materials, Inc. Chemical mechanical polishing apparatus and methods
JP6940495B2 (ja) * 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000308957A (ja) * 1999-04-06 2000-11-07 Lucent Technol Inc 研磨スラリーを連続的に供給し、調整するための装置および方法
US6248006B1 (en) * 2000-01-24 2001-06-19 Chartered Semiconductor Manufacturing Ltd. CMP uniformity
JP2004511109A (ja) * 2000-10-06 2004-04-08 ラム　リサーチ　コーポレーション 活性スラリによるｃｍｐシステムおよびｃｍｐシステムの実装方法
US20030148712A1 (en) * 2002-02-01 2003-08-07 Chartered Semiconductor Manufacturing Ltd. Multiple step CMP polishing
US20050272348A1 (en) * 2004-06-04 2005-12-08 Chung-Ki Min Polishing pad assembly, apparatus for polishing a wafer including the polishing pad assembly and method for polishing a wafer using the polishing pad assembly
US20090163114A1 (en) * 2007-12-19 2009-06-25 Advanced Technology Development Facility, Inc. Systems and Methods for Dynamic Slurry Blending and Control
JP2012076220A (ja) * 2010-09-09 2012-04-19 Ngk Insulators Ltd 被研磨物の研磨方法、及び研磨パッド

Also Published As

Publication number Publication date
CN104919575B (zh) 2018-09-18
CN109243976B (zh) 2023-05-23
KR102229556B1 (ko) 2021-03-18
WO2014109929A1 (en) 2014-07-17
CN104919575A (zh) 2015-09-16
US20200086452A1 (en) 2020-03-19
TW201800186A (zh) 2018-01-01
TWI692387B (zh) 2020-05-01
US20140199840A1 (en) 2014-07-17
TW201433413A (zh) 2014-09-01
TWI598188B (zh) 2017-09-11
KR102152964B1 (ko) 2020-09-07
KR20150104206A (ko) 2015-09-14
US10500694B2 (en) 2019-12-10
US11453097B2 (en) 2022-09-27
KR20200105972A (ko) 2020-09-09
CN109243976A (zh) 2019-01-18
US20170297163A1 (en) 2017-10-19

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