CN109243976B - 化学机械抛光设备及方法 - Google Patents

化学机械抛光设备及方法 Download PDF

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Publication number
CN109243976B
CN109243976B CN201810942811.1A CN201810942811A CN109243976B CN 109243976 B CN109243976 B CN 109243976B CN 201810942811 A CN201810942811 A CN 201810942811A CN 109243976 B CN109243976 B CN 109243976B
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Prior art keywords
slurry
components
zones
component
polishing
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Chinese (zh)
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CN109243976A (zh
Inventor
R·巴贾杰
T·H·奥斯特赫尔德
H·陈
T·Y·李
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Applied Materials Inc
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Applied Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
CN201810942811.1A 2013-01-11 2013-12-30 化学机械抛光设备及方法 Active CN109243976B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810942811.1A CN109243976B (zh) 2013-01-11 2013-12-30 化学机械抛光设备及方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361751688P 2013-01-11 2013-01-11
US61/751,688 2013-01-11
CN201810942811.1A CN109243976B (zh) 2013-01-11 2013-12-30 化学机械抛光设备及方法
PCT/US2013/078313 WO2014109929A1 (en) 2013-01-11 2013-12-30 Chemical mechanical polishing apparatus and methods
CN201380070166.4A CN104919575B (zh) 2013-01-11 2013-12-30 化学机械抛光设备及方法

Related Parent Applications (1)

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CN109243976A CN109243976A (zh) 2019-01-18
CN109243976B true CN109243976B (zh) 2023-05-23

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US (3) US20140199840A1 (https=)
JP (1) JP2016507896A (https=)
KR (2) KR102152964B1 (https=)
CN (2) CN109243976B (https=)
TW (2) TWI692387B (https=)
WO (1) WO2014109929A1 (https=)

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US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
US12506014B2 (en) 2021-10-19 2025-12-23 Tokyo Electron Limited Methods for non-isothermal wet atomic layer etching
US11802342B2 (en) 2021-10-19 2023-10-31 Tokyo Electron Limited Methods for wet atomic layer etching of ruthenium
US11866831B2 (en) 2021-11-09 2024-01-09 Tokyo Electron Limited Methods for wet atomic layer etching of copper
US12506011B2 (en) 2023-12-15 2025-12-23 Tokyo Electron Limited Methods for wet atomic layer etching of transition metal oxide dielectric materials
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Publication number Publication date
CN104919575B (zh) 2018-09-18
KR102229556B1 (ko) 2021-03-18
WO2014109929A1 (en) 2014-07-17
CN104919575A (zh) 2015-09-16
US20200086452A1 (en) 2020-03-19
TW201800186A (zh) 2018-01-01
TWI692387B (zh) 2020-05-01
US20140199840A1 (en) 2014-07-17
TW201433413A (zh) 2014-09-01
TWI598188B (zh) 2017-09-11
JP2016507896A (ja) 2016-03-10
KR102152964B1 (ko) 2020-09-07
KR20150104206A (ko) 2015-09-14
US10500694B2 (en) 2019-12-10
US11453097B2 (en) 2022-09-27
KR20200105972A (ko) 2020-09-09
CN109243976A (zh) 2019-01-18
US20170297163A1 (en) 2017-10-19

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