Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
  • H10P52/40—Chemomechanical polishing [CMP]
  • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
  • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
  • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/11—Lapping tools
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/27—Work carriers
  • B24B37/30—Work carriers for single side lapping of plane surfaces
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
  • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
  • H10P52/40—Chemomechanical polishing [CMP]
  • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0418—Apparatus for fluid treatment for etching
  • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting

Definitions

• the present invention relates generally to
• semiconductor device manufacturing and more particularly to methods and apparatus adapted to polish a substrate surface.
• CMP chemical mechanical polishing
• Such polishing may be accomplished by pressing a rotating substrate held in a holder (e.g., polishing head or carrier) against a rotating polishing pad while a slurry is applied ahead of the
• the slurry is commonly made up of a mixture of oxidants, metal oxide abrasive particles, etchants, complexing agents, and corrosion inhibitors.
• oxidants metal oxide abrasive particles, etchants, complexing agents, and corrosion inhibitors.
• a substrate polishing apparatus in a first aspect, includes a polishing platform having two or more zones, each zone adapted to contain a different slurry component.
• a substrate polishing system in another aspect, includes a
• substrate holder adapted to hold a substrate
• polishing platform having a moveable polishing pad with two or more zones, each zone operable to receive a different slurry component.
• a method of processing a substrate includes providing a substrate in a substrate holder, providing a polishing platform having a moveable polishing pad, and dispensing a different slurry component into two or more zones on the polishing pad.
• a substrate polishing system in another aspect, includes a
• a substrate holder adapted to hold a substrate, a polishing platform having a polishing pad moveable relative to the substrate, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component.
• a method of processing a substrate includes providing a substrate in a substrate holder, providing a polishing platform having a moveable polishing pad, and dispensing between the polishing pad and the substrate, in a timed sequence, two or more slurry components each having a different chemical composition.
• FIG. 1A illustrates a schematic top view of a linear substrate polishing apparatus according to
• FIG. IB illustrates a schematic cross-sectioned side view of a linear substrate polishing apparatus according to embodiments taken along section line IB-IB of FIG. 1A.
• FIG. 1C illustrates a schematic cross-sectioned side view of a linear substrate polishing apparatus according to embodiments taken along section line 1C-1C of FIG. 1A.
• FIG. 2A illustrates a schematic top view of a rotary substrate polishing apparatus according to
• FIG. 2B illustrates a schematic side view of a rotary substrate polishing apparatus according to
• FIG. 3A illustrates a top view of a slurry distributor according to embodiments.
• FIG. 3B illustrates a side view of a slurry distributor according to embodiments.
• FIG. 3C illustrates a first end view of a slurry distributor according to embodiments.
• FIG. 3D illustrates a second end view of a slurry distributor according to embodiments.
• FIGs. 3E-3G illustrate various cross section view of a slurry distributor according to embodiments.
• FIG. 4 illustrates a flowchart of a method of polishing a substrate according to embodiments.
• FIG. 5 illustrates a flowchart of a method of polishing a substrate according to embodiments.
• FIG. 6 illustrates a graph of phases (e.g., pulses) of a method of polishing a substrate according to embodiments .
• FIG. 7 illustrates a graph of phases (e.g., pulses) of another method of polishing a substrate according to embodiments.
• Embodiments described herein relate to apparatus, systems and methods useful for, and adapted to, polishing a surface of a substrate in semiconductor device
• Prior systems have utilized a slurry of mixed slurry components.
• the components of the slurry are adapted to accomplish various processes on the substrate, such as the process of oxidation of the substrate surface by oxidants and material removal by abrasive particles and etchants.
• the across the wafer removal variations may be as high as 50%-100% of the film thickness that is removed.
• thinner and thinner films are being applied and may be undergo polishing.
• films used in the formation of front end structures, such as inlaid metal gates and the like are very thin. As these films are provided in the device structures, it is desired that these thin films be removed with a relatively high degree of uniformity and control.
• the material removal precision is also desired to be on the order of an atomic layer.
• the method can offer precise control of the removal process, i.e. the relative amount of removal.
• embodiments of the invention physically separate the slurry components. This may be used to provide more precise control over amount of material removal.
• the polishing process may be provided with distinct breaks (e.g., formed as physical zones of slurry components having differing chemical composition) between two or more of the slurry components (e.g., accomplishing oxidation, material removal, and corrosion inhibition) .
• a polishing platform e.g., comprising a pad support and pad
• a polishing platform may be separated to have two or more zones, wherein each zone is adapted to contain a different slurry component.
• Each slurry component may have a different chemical
• the substrate may be moved rastered (e.g., translated) across the zones wherein each adjacent zone includes a different slurry component.
• Running one cycle across the zones, in sequence, may be used to effectively remove one atomic layer, for example.
• Total material removal can be precisely controlled by managing the number of cycles. Removal may be controlled on an atomic level .
• the polishing surface is separated (e.g., broken up) into multiple zones, wherein each zone contains an individual slurry component that performs one of an oxidation, material removal, or corrosion inhibition process.
• rastering e.g., scanning
• high cycle counts can be achieved within reasonable total polish time.
• oxidants function to oxidize the surface layer of substrate. This oxidation process may be self-limiting, since only a surface layer is exposed to oxidants.
• abrasives and etchants attack the previously-oxidized surface layer.
• the material removal zone may be adjacent to the oxidation zone. This material removal process may also be self-limiting, since only the oxidized layer is removed.
• a corrosion inhibiting zone containing a corrosion inhibiting slurry component e.g., including corrosion inhibiters
• the corrosion inhibiting zone may be provided adjacent to the oxidation zone .
• embodiments of the invention disclose a polishing process (e.g., a film removal process), which utilizes multi-step reactions to affect uniform film removal.
• embodiments of the invention separate the slurry components in time by
• This multi-step polishing process can be applied to any application where the CMP involves competing reactions .
• the polishing process will have distinct breaks (e.g., separations in time) between administering of the various slurry components used to accomplish oxidation, material removal, and/or corrosion inhibition processes.
• the oxidiation slurry component may be first introduced in time, followed by a material removal slurry component (e.g., containing abrasives and/or etchants) . This may be followed in sequence by introducing a corrosion inhibitor slurry component in some embodiments. The sequence may be followed by introduction of a rinsing liquid (e.g., de-ionized (DI) water) in some embodiments. In other embodiments, the rinsing liquid may be introduced between the various slurry introductions phases.
• DI de-ionized
• FIGs. 1A-1C illustrate various views of a
• the substrate polishing apparatus 100 is adapted to hold and polish a substrate 101 as will be apparent from the
• the substrate polishing apparatus 100 includes a polishing platform 102 having two or more
• first zone 104 second zone 106
• third zone 108 third zone 108.
• the two or more zones e.g., 104, 106, and 108 are adapted to contain a different slurry component having a different chemistry (chemical composition) .
• the two or more zones may be arranged across a width "W" of the platform 102. In the depicted embodiment, nine zones are shown. However, more or less numbers of zones may be
• the platform 102 comprises a linear polishing platform wherein the two or more zones are arranged across a width "W" of a pad 109 and that extend along the length "L" of the pad with the length L being substantially longer than the width W.
• the pad 109 of the platform 102 moves linearly as indicated by directional arrow 110.
• various slurry components such as slurry component 1, slurry component 2, and slurry component 3 may be applied to the pad 109 by a distributor 112.
• the distributor 112 may have any suitable internal structure capable of dispensing the slurry
• the slurry component 1, slurry component 2, and slurry component 3, for example, may be received from slurry component supplies 114, 116, 118, respectively. More or less numbers of slurry components may be provided.
• the supply of slurry components to the distributor 112 may be accomplished by a distribution system having one or more suitable pumps or other flow control mechanisms 115.
• "Slurry component” as used herein means a processing medium that is adapted to carry out one or more designated polishing functions.
• a rinsing liquid e.g., de-ionized water
• a rinsing liquid may be provided from the rinsing liquid source 123 and inserted between two or more of the zones, such as between zone 104 and 106, or between 106 and 108, or between both zones 104 and 106 and zones 106 and 108.
• Any suitable construction of the distributor 112 may be used to
• slurry component 1 may comprise a material adapted to execute a surface modification function, such as oxidation or other surface modification such as the formation of a nitride, bromide, chloride, or hydroxide containing later.
• Slurry component 1 may contain a liquid carrier such as purified water, and an oxidant such as hydrogen peroxide, ammonium persulfate, or potassium iodate. Other surface modifying materials may be used.
• Slurry component 1 may be supplied to the first zone 104 of the pad 109 from the component supply 1 114 through a first channel 119A (FIG. 3G) of the distributor 112, for example.
• Slurry component 2 may comprise a material adapted to execute a material removal function.
• Slurry component 2 may contain a liquid carrier such as purified water, and abrasive media such as silicon dioxide or aluminum oxide.
• the abrasive may have an average particle size between about 20 nanometers and 0.5 microns. Other particle sizes may be used.
• Slurry component 2 may also include an etchant
• Slurry component 2 may be supplied from the component supply 2 116 to the second zone 106 of the pad 109 by a second channel 119B (FIG. 3F) of the distributor 112, for example.
• slurry component 3 may comprise a material adapted to execute a corrosion
• Slurry component 3 may contain a liquid carrier such as purified water, and corrosion inhibitor such as benzotriazole, or 1,2,4 Triazole. Slurry component 3 may be supplied from the component supply 3 118 to the third zone 108 of the pad 109 by a third channel 119C (FIG. 3E) of the distributor 112, for example.
• a liquid carrier such as purified water
• corrosion inhibitor such as benzotriazole, or 1,2,4 Triazole.
• Slurry component 3 may be supplied from the component supply 3 118 to the third zone 108 of the pad 109 by a third channel 119C (FIG. 3E) of the distributor 112, for example.
• the zones 104, 106, 108 may be arranged in a side by side fashion and may each have a width of between about 2 mm and 50 mm.
• the widths may be the same as or different from each other. Other widths may be used.
• a distribution system including a distributor 112 is adapted to dispense into the two or more zones (e.g., zone 104, 106) at least two different slurry components.
• the slurry components may be selected from a group consisting of a surface modification slurry component, and a material removal slurry component, as discussed above.
• the distributor 112 may be formed as a unitary component and may be positioned adjacent to the pad 109 (e.g., just above the pad 109) .
• the distributor 112 may provide delivery of the slurry
• the distributor 112 may be part of a
• First channel 119A is adapted to distribute the slurry component 1 from component 1 supply 114 to one or more first distribution outlets 121A that are fluidly coupled to the first channel 119A along its length.
• the distributor 112 may also include a second channel 119B extending along the length of the distributor body 117 and adapted to distribute the slurry component 2 from component 2 supply 116 to one or more second
• distribution outlets 121B that are fluidly coupled to the second channel 119B along its length.
• the distributor 112 may also include a third channel 119C extending along the length of the distributor body 117 and adapted to distribute the slurry component 3 from component 3 supply 118 to one or more second
• outlets 121C that are fluidly coupled to the third channel 119C along its length.
• Other channels and interconnected outlets may be provided to disburse other slurry components and/or a rinsing liquid.
• the rinsing liquid may be received in a separate separation zone to separate the disbursed slurry components.
• the outlets 121A, 121B, 121C may have a diameter of less than about 5 mm, or between about 1 mm and 15 mm in some embodiments.
• a pitch (e.g., spacing between the adjacent outlets) may be less than about 50 mm, less than about 25 mm, or even less than about 10 mm in some embodiments. In some embodiments, the pitch may be between about 2 mm and 50 mm. Other diameters and pitches may be used.
• the distributor may be comprised of separate distributor heads, one for each slurry component that may be arranged at different spatial
• a rinsing liquid (e.g., DI water) may be delivered through some or all of the outlets 121A- 121C, or through separate outlets specifically designed for the rinsing liquid.
• Rinsing liquid may be provided from rinsing liquid supply 123 to some or all of each of the outlets 121A-121C by controlling valve 119S.
• the rinsing liquid may be provided by a separate distributor head or separate outlets from the distributor 112.
• the distributor may be included in the pad support 127 of the platform 102.
• the slurry components 1, 2, 3 may be disbursed to the various zones 104, 106, and 108 from underneath the pad 109.
• the pad support 127 may include holes like the outlets 121A-121C in distributor 112 being arranged across the width of the pad 109. Each hole may be fluidly coupled to one of the slurry component supplies 114, 116, 118.
• the various separated slurry components 1, 2, 3 may pass though the holes and wick through the pad 109 containing an
• the wicking provides the slurry components 1, 2, 3 to the one or more zones 104, 106, 108, respectively. Rinsing liquid may also be disbursed through some or all of the holes.
• polishing apparatus 100 may be rotated.
• Substrate holder 120 is adapted to hold the substrate 101 in contact with the pad 109 and rotate the substrate 101 as the polishing takes place.
• Other motions may be provided in addition or in place of the rotation, such as orbital motion.
• Rotational speed may be between about 10-150 RPM, for example.
• Rotation may be accomplished by driving the holder 120 with a holder motor 122. Any suitable motor may be used.
• An applied pressure on the substrate 101 during polishing may be between about 0.1 psi and 1 psi, for example. Any suitable conventional mechanism for applying the pressure may be used, such as a spring-loaded mechanism or other suitable vertically-acting actuator. Other rotational speeds and pressures may be used.
• Substrate holders also referred to as retainers or carrier heads
• retainers or carrier heads are described in US Pat. Nos. 8,298,047; US 8,088,299; US 7,883,397; and US 7,459,057, issued to the present assignee, for example.
• the pad 109 may be moved in the direction of the arrow 110.
• the linear speed of movement of the pad 109 in the direction of arrow 110 may be between about 40 cm/sec and about 600 cm/sec, for example. Other speeds may be used.
• the pad 109 as best shown in FIGs. IB and 1C, may be provided in the form of a continuous or endless belt.
• the pad 109 may be supported at its ends by first and second rollers 124, 126 (e.g., cylindrical
• rollers 124, 126 may be supported for rotation on a frame 128 by bearings or bushings, or other suitable low friction
• rollers such as roller 126
• roller 126 may be coupled to a pad drive motor 130 which may be driven at the appropriate rotational speed to accomplish the linear polishing speed of the pad 109 described above.
• Pad support 127 may also be coupled to the frame 128 at one or more locations and may support the upper portion of the pad 109 underneath some or most of the length L of upper surface of the pad 109.
• the holder 120 may be translated in the direction of directional arrow 132.
• the translation may be an oscillation back and forth along the transverse direction 132, generally perpendicular to the linear motion of the pad 109.
• Translation may be caused by any suitable translation motor 134 and drive system (not shown) that moves the substrate holder 120 back and forth along a support beam 136.
• the drive system adapted to accomplish the translation may be a rack and pinion, chain and sprocket, belt and pulley, drive and ball screw, or other suitable drive mechanism.
• an orbital motion may be provided by a suitable mechanism.
• distribution flow of the slurry components 1, 2 and 3 and rinsing liquid 123 may be controlled by controller 138.
• Controller 138 may be any suitable computer and connected drive and/or feedback components adapted to control such motions and functions.
• the pad 109 may be made of a suitable polishing pad material, for example.
• the pad 109 may be a polymer material, such as polyurethane, and may have open surface porosity.
• Surface porosity may be open porosity and may have an average pore size of between about 2 microns and 100 microns, for example.
• Pad may have a length L, as measured between the centers of the rollers 124, 126, of between about 30 cm and 300 cm, for example. Other dimensions may be used .
• FIGs. 2A and 2B illustrate various views of an alternative embodiment of a substrate polishing apparatus 200 and components thereof. As before, the substrate
• polishing apparatus 200 is adapted to hold and polish a substrate 101 as will be apparent from the following
• the substrate polishing apparatus 200 includes a polishing platform 202 having a pad 209 and a pad support 227 (e.g., a platen) .
• the polishing platform 202 has two or more physical zones, such as first zone 204, and second zone 206, and even a third zone 208. Zones 204, 206, 208 in this embodiment are arranged as concentric annuli, and the platform 202 is rotatable.
• Each zone 204, 206, 208 is adapted to contain a different slurry component having a different chemistry, such as slurry components 1-3 described above.
• the slurry components may be dispensed to the various zones 204, 206, 208 by a distributor 212 coupled to the component supplies 114, 116, 118, via valves or other flow control mechanism as commended by controller 238 as described before.
• the two or more zones 204, 206, 208 may be arranged across a diameter "D" of the platform 202.
• the width of each annular zone may be the same or different and of a width, and may be as described above. In the depicted embodiment, nine annular zones are shown. However, more or less numbers of zones may be provided.
• each of the zones labeled 204 may receive and contain the same slurry chemistry.
• each of the zones labeled 206 may receive and contain the same slurry chemistry, and each of the zones labeled 208 may receive and contain the same slurry component chemistry.
• the chemistries in each of the zones 204, 206 and 208 may have different slurry component chemistries as compared to each other .
• the platform 202 comprises a rotary polishing platform wherein the two or more zones (e.g., zones 204, 206 or 204, 206 and 208) are arranged across a diameter D the pad 209.
• the platform 202 and pad 209 may be rotated in the direction of directional arrow 210 at rotational speed of between about 10 and about 200 RPM by a platform motor 230.
• the substrate holder 220 may be rotated by a suitable holder motor 222 to rotate the substrate 101 as the polishing takes place.
• Rotational speed of the holder 220 may be between about 10 RPM - 200 RPM, for example.
• the holder 220 may be translated (e.g., oscillated) back and forth along the transverse direction 232, generally perpendicular to the tangential motion of the pad 209. Translation may be caused by any suitable translation motor 234 and drive system (not shown) as described above.
• An applied pressure on the substrate 101 during polishing may be as discussed above, for example. Any suitable conventional mechanism for applying the pressure may be used, such as a spring-loaded mechanism or actuator. Other rotational speeds and pressures may be used.
• Substrate holder 220 may be as described in US Pat. Nos. 8,298,047; US 8,088,299; US 7,883,397; and US 7,459,057, for example.
• FIG. 4 illustrates a method 400 of processing a substrate (e.g., substrate 101), and in particular a method of polishing a surface (e.g., a front side or backside surface) of a substrate 101 (e.g., a patterned or
• the method 400 includes, in 402,
• a substrate in a substrate holder (e.g., substrate holder 120, 220), providing, in 404, a polishing platform (e.g., polishing platform 102, 202) having a moveable polishing pad (e.g., polishing pad 109, 209), and, in 406, dispensing a different slurry component into two or more zones (e.g., zones 104, 106, 108) on the polishing pad.
• the polishing pad may be of the linear moving version 109 or rotationally moving version 209.
• the slurry components may be disbursed to the zones (e.g., zones 104, 106, 108) above the pad 109 or below the pad 109 (e.g., by wicking or other capillary action) .
• a substrate polishing system is provided as described in either of FIGs. 1A-1C or 2A and 2B.
• the substrate polishing system 100, 200 includes a polishing holder 120, 220 adapted to hold a substrate 101, a polishing platform 102, 202 having a polishing pad 109, 209 moveable relative to the substrate 101, and a distribution system adapted to dispense at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component.
• the two or more slurry components are dispensed in a timed sequence, one after another.
• a first slurry component selected from the group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component is first dispensed onto the pad (e.g., pad 109, 209). After a predetermined amount of time has elapsed, the supply of the first slurry component is stopped, and a second slurry component selected from the group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion
• inhibiting slurry component is then dispensed onto the pad (e.g., pad 109, 209) .
• the supply of the second slurry component is stopped, and a third slurry component selected from the group consisting of an oxidation slurry component, a
• inhibiting slurry component may then dispensed onto the pad (e.g., pad 109, 209) .
• the timed sequence may start over again by again dispensing the first slurry components.
• the sequence may be repeated as many times as necessary to accomplish the desired results, such as a desired amount of film removal.
• the pad 109, 209 may be rinsed by supplying rinsing liquid thereto.
• FIGs. 5 and 6 illustrate another method 500 of polishing a substrate.
• the method 500 includes, in 502, providing a substrate (e.g., substrate 101) in a substrate holder (e.g., holder 120, 220), and, in 504, providing a polishing platform having a moveable polishing pad.
• the method includes dispensing, in a timed sequence, two or more slurry components each having a different chemical composition between the polishing pad and the substrate.
• the slurry components may be dispersed between the pad (e.g., pad 109, 209) and the substrate 101 in a timed sequence as shown.
• a first slurry component e.g., an oxidizing slurry component
• a second slurry component e.g., a material removal slurry component
• the chemical composition of the first and second slurry components are different.
• a third slurry component e.g., a corrosion inhibiting slurry component
• dispensing phases may be repeated in 653-655. Other phases may be performed in addition or in substitution thereof.
• the three- or more dispense sequences may be repeated over and over as many times are desired on a single substrate. This may be performed while the substrate is being oscillated and rotated against the moving pad (e.g., pad 109, 209) as described above.
• the pad e.g., pad 109, 209 may undergo a rinsing phase wherein the pad (e.g., pad 109, 209) may be supplied with a rinsing liquid (e.g., DI water or other inert liquid
• a rinsing liquid e.g., DI water or other inert liquid
• the method 500 may then stop, a new substrate may be placed in the substrate holder (e.g., substrate holder 120, 220), and the described method 500 may be implemented on the second substrate starting at 657.
• a new substrate e.g., substrate holder 120, 220
• the described method 500 may be implemented on the second substrate starting at 657.
• Each of the phases may take between about 1 second and about 60 seconds. Other time lengths may be used. Some of the pulses may be less than 1 second. Each phase may be of the same or a different length. Some of the slurry components may be combined in some embodiments to institute more than one processing phase in a single pulse. For example, an oxidation and corrosion inhibitor phase may be combined as one slurry component and provided as one pulse in some embodiments. In other embodiments, a complexing agent may be combined in a single pulse with an abrasive (e.g., a metal oxide abrasive) . The oxidizing agent may be hydrogen peroxide. The corrosion inhibitor may be triazole. The complexing agent may be an organic acid, organic acid salt, or an amino acid. Other types of oxidizing agents, corrosion inhibitors, complexing agents, and abrasives may be used.
• abrasive e.g., a metal oxide abrasive
• the oxidizing agent may be hydrogen peroxide.
• FIG. 6 illustrates another embodiment of a method 600 utilizing a series of slurry components that are
• time-separated introduction of polishing chemistry allows for increased flexibility in use of chemical agents (e.g., two or more slurry
• oxidation chemistries are examples of oxidation chemistries.
• a surface film may be oxidized to a depth of about 20 angstroms and then stopped. By separating the slurry components in time, more aggressive oxidation chemistries could be used where the depth of oxidation may be controlled by the length of the pulse of chemical slurry component supplied to the substrate.
• phased e.g., timed
• the slurry components may be use to overcome these previous limitations.
• the additive could be first introduced, followed by an abrasive solution which dilutes the additive and enables limited film removal. Additional removal could be accomplished by introduction of rinse which may quickly dilute the additive and allows limited removal of film until the charge of abrasive slurry component is exhausted .
• the method may be useful for metal film removal, and may involve an oxidation phase involving film oxidation, and a phase of inhibitor adsorption and
• each of the slurry components may be dispersed between the pad (e.g., pad 109, 209) and the substrate 101 in a timed sequence, but with a rinsing phase being instituted between the pad (e.g., pad 109, 209)
• each pulse of a slurry component e.g., oxidizing, inhibitor, complexing agent, material removal agent
• a pulse of a rinsing agent e.g., DI water
• a first slurry component e.g., an oxidizing slurry component
• a second slurry component e.g., a material removal slurry component
• the chemical composition of the first and second slurry components are different.
• This second rinse 657 may be followed by a third slurry component (e.g., a corrosion inhibiting slurry component) for a third time increment 653. This may be followed by another rinse in 657.
• this sequence may be repeated again on the same substrate 101 as many times as desired to achieve the desired material removal, or a new substrate may be inserted in the substrate holder (e.g., 120, 220) and polishing of the substrate by the method 700 may commence on the new substrate.
• the times may be the same or different for each phase of the polishing process .
• phase may be combined in some embodiments.
• the relative duration of each phase may be determined based on reaction kinetics of that particular phase. For example, an oxidation phase may be relatively short for copper polish, while it may be relatively long for polishing ruthenium or more noble metals.
• the pulse duration of a corrosion inhibitor phase (including inhibitor
• adsorption may also be varied in length based on the kinetics of adsorption.
• a complexation-abrasion phase may be varied in length based on the kinetics thereof.
• a pulse of an oxidizing slurry may also be varied in length based on the kinetics thereof.
• a corrosion inhibitor slurry component e.g., an inhibitor solution
• a complexing slurry component e.g., a complexing agent
• sequenced pulses may be provided while the substrate 101 is being pressed against a moving surface of the pad (e.g. , pad 109, 209) .
• a phased instruction of the slurry components in a timed sequence is as follows.
• a copper film removal process is provided wherein a first pulse of combined slurry component of an oxidizer and inhibitor solution are followed by a separate pulse of a complexing agent, while the substrate (e.g., wafer) is being pressed against a moving surface of the pad (e.g., pad 109, 209) as described herein.
• solution and the separate pulse of complexing agent may be interspersed by a rinsing pulse of a rinsing liquid.
• the rinse pulse may be at the end of the two- phase sequence.
• a first pulse of an oxidizing slurry component that may be followed by a separate sequential pulse of a combined slurry component having a metal oxide abrasive and a
• the complexing agent slurry component and the metal oxide abrasive slurry component may be instituted as separated phases one after the other in a three-phase polishing process.
• a rinsing phase may be instituted between the phases or at the end of the sequence.
• each step or pulse may be self-limiting, which may lead to relatively more uniform removal of even small thicknesses, particularly less than 500 Angstroms, and especially less than 200 Angstroms.
• a surface oxidation phase of a surface e.g., a copper surface
• the oxidation rate may slow dramatically. Consequently, when the complexation- abrasion phase is next executed, film removal may be
• the distribution of the slurry components may be provided by the systems and apparatus described herein.
• other suitable systems adapted to carry out a timed sequence delivery of the slurry components, and possibly a rinse may be used. Accordingly, while the present invention has been disclosed in connection with example embodiments thereof, it should be understood that other embodiments may fall within the scope of the invention, as defined by the following claims .

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• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
• Grinding-Machine Dressing And Accessory Apparatuses (AREA)

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• 2013
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