TW491750B - Method and apparatus for electrochemical planarization of a workpiece - Google Patents

Abstract

An electrochemical planarization apparatus for planarizing a workpiece which has at least one metallized surface us disclosed. The apparatus includes a first brushing surface configured to frictionally engage the metallized surface of the workpiece, a first driver assembly configured to cause relative motion between the metallized surface of the workpiece and the first brushing surface, and a first conductive element disposed proximate the first brushing surface. The apparatus also includes a first power supply configured to effect an electric potential difference between the metallized surface of the workpiece and the first conductive element, and a first solution application mechanism configured to supply an electrolytic solution to the first metallized surface. The apparatus may also have a second brushing surface configured to frictionally engage a second metallized surface of the workpiece, a second conductive element disposed proximate the second brushing surface, a second solution application mechanism configured to supply an electrolytic solution to the second metallized surface, and a second power supply configured to effect an electric potential difference between the second metallized surface of the workpiece and the second conductive element.

Description

491750 V. Description of the invention (1) The present invention generally relates to a polishing or leveling system for workpieces such as semiconductor wafers, especially an electrochemical leveling device and method for wafers having a metallized surface. Background Manufacturing of integrated circuits begins with the production of high-quality semiconductor wafers. During the wafer process, the wafer is subjected to multiple masks, etching, and dielectric and conductor deposition methods. In addition, the key to the operation of semiconductor components is metallization, which generally involves materials, wiring and connection methods and processes of integrated circuit components located on the wafer surface. Typically, the "wiring" of integrated circuits involves etching trenches or trenches in a flat dielectric (insulator, body) layer and filling the trench with metal.

In the past, the main metallization material used in semiconductor manufacturing was aluminum, because the use of gold encountered leakage and adhesion problems, and the use of copper has high contact resistance with silicon. Other metallization materials include Ni, Ta, Ti, W, Ag, Cu / Al, TaN, TiN, CoWP, NiP, and CoP. In the past, the semiconductor industry has slowly moved to using copper for metallization, as aluminum has shown problems with alloys and electromigration. When filling with copper, typically a barrier layer of other materials is fixed, which is used to line trenches and canals to prevent copper from moving into the dielectric layer. Barrier metals can be deposited using W, Ti, TiN, Ta, TaN, various alloys, and other refractory nitrides, and can be deposited using CVD, PJFD, electroless or electrolytic plating. To achieve good filling of trenches and trenches, additional metal is deposited during the process so that the metal covers the wafer area above and outside the trenches and trenches. After filling, it is typically flattened to remove extra metal until the surface of the medium is seen. Leveling leaves filled trenches and ditches, resulting in a flat, polished surface.

Due to the high precision required in the fabrication of integrated circuits, generally an extremely flat surface is required on at least one side of the semiconductor wafer, to ensure production on the wafer surface.

Page 6 491750 V. Description of the invention (2) Appropriate accuracy and efficiency of the microelectronic structure. As the size of integrated circuits continues to decrease and the density of microstructures on integrated circuits increases, the need for precision becomes more important. So, ... between the steps; Polish or flatten the wafer surface to get the flattest surface possible. Chemical mechanical planarization (CMP) is a customary technique for semiconductor wafer planarization. For a discussion of chemical mechanical levelling (CMP) manufacturing methods and devices, see, for example, U.S. Pat. No. 4,805,348 (issued February 1, 989) and 5,099,614 (1992 (Issued in July),] ^]: 151'11 (U.S. Patent No. 5,329,732, issued by 1 et al. (Issued in July 1994), U.S. Patent No. 5,498,196 by Karl srud (issued in March 1996) And US Patent No. 5,498, 199 (issued in March 1996) by Karlsrud et al., CMP machines typically include a wafer carrier, which is formed in a wafer polishing or leveling process, Can hold, rotate, and transfer wafers. In the flattening operation, pressure elements (such as rigid plates, soft shells, etc.) that are integrated with the wafer carrier can be pressed, so that the wafer is combined with the polishing surface with the required force 222 =, the surface typically rotates at different speeds, causing the polishing surface to move laterally relative to the wafer, and promoting uniform flatness. Generally speaking, the polishing surface includes horizontal polishing pads, such as hafnium oxide, alumina, Exposed surface of fumes / sedimented silica or other granular abrasives. Polishing pads can be technically Various types of materials are available on the market in Chiwa. Typical polishing pads are blow molded polyurethanes, such as 1 (: and Gs series polishing pads manufactured and sold by Rodel Products Company, Scottdale, Arizona, USA. The hardness and density of the tablet depends on the material to be polished. If the correct slurry and process parameters are used, cmp can make the leveling operation very

491750 V. Description of the invention (3) Good tendency, but the work piece will leave stress after work, which will cause cracks and short circuit between the metal layers later. In addition, semiconductors are increasingly using low-k dielectrics, which tends to become fragile materials. CMP can cause cutting and cracking of these fragile layers. CMP also tends to cause depressions in the center of wide metal features, such as trenches and canals, oxide erosion between metal features, and oxide loss in dielectrics. Electrochemical planarization is an attractive workaround for CMP because it does not generate stress in the workpiece and therefore does not reduce the integrity of low-k dielectric components to the extent that CMP may cause. In addition, electrochemical leveling is less likely to cause dents, oxide punches, and oxide loss in the dielectric layer. Electrochemical leveling is based on electropolishing and electrochemical mechanisms, that is, using both electrochemical solutions and electricity to remove metal from the substrate. Figure 1 shows a conventional electro-etched battery available in known art. The tank 1 contains a liquid electrolyte 4, an aqueous solution of tritium. Two electrodes (ie, anode 6 and cathode 8) are wired to a voltage source, such as a battery pack 10. When the device is energized, the metal atoms in the anode 6 are electrically ionized and enter the solution to become ions. Depending on the chemistry of the metal and plutonium, the metal ions of the anode 6 are either plated on the anode 8, falling as a precipitate, or remaining in the solution. When used for the planarization of a metal film on a semiconductor wafer, the conventional electrochemical planarization has the advantage that the metal cannot be selectively removed from the wafer. Figure 2 shows the dielectric layer 12, which has trenches or channels, and a metal barrier layer 20 thereon. The metal layer 14 is a comprehensive barrier layer on the wafer, filling the trench. After being deposited on the barrier layer 20, the metal layer 14 is not completely flat, but has an area of high terrain 16 and low terrain 18. With conventional electrochemical leveling, the metal layer is removed uniformly, so there are still areas of high terrain and low terrain.

491750 V. Description of the invention (4) However, in leveling, it is necessary to “stagewise decrease”, that is, to selectively remove metal layers with a high terrain area and then uniformly remove the metal layers. The reduction in stage height should result in metal remaining in the trenches and canals to form a flat surface, as shown in Figure 3. Due to the high cost of processing equipment, semiconductor manufacturers often prefer to use existing processing equipment for multiple functions. Standard equipment in conventional semiconductor processing facilities, including wafer cleaners, thoroughly cleans and rinses processed wafers to ensure that dust is removed from the wafers. For a discussion of existing wafer cleaners, see, for example, U.S. Patent No. 5,357,645 issued to Onodera on October 25, 1994, and issued to Inoue on January 11, 2000. Human U.S. Patent No. 6,0 1 2, 1 3. The wafer cleaning machine needs to be modified or installed to perform electrochemical leveling, thereby reducing equipment costs. Therefore, there is an urgent need for an electrochemical leveling method and device to complete the stepwise reduction of the metal layer on the substrate, and then level the metal layer uniformly. It also requires electrochemical leveling technology, which can be added to existing processing equipment. Summary of the Invention The above and other gist of the present invention will be made clearer by those skilled in the art, referring to the accompanying drawings, and referring to the attached drawings for a non-limiting detailed description of the preferred embodiment. According to a specific example of the present invention, an electric leveling device for flattening a workpiece having at least one metallized surface includes a first brushing surface to constitute a metallized surface that is pressed against the workpiece. The device further includes a first driver assembly configured to promote relative movement between the workpiece and the first brushing surface; and a first conductive element is provided adjacent to the first brushing surface. The first power source constitutes a metallized watch on the workpiece

Page 9 491750 V Description of the invention (5) '--_: ί f 丨 一 2 ί The potential difference between 70 cases. The device also contains μ virtual paired first metallized surfaces to supply electrolysis. The solution should be gold. This is a specific example, and it is electroplated. According to another specific example of the present invention, it is rotated about the longitudinal axis. According to still another specific example of the present invention According to still another specific example of the present invention According to still another specific example of the present invention, it is rotated about the longitudinal axis. According to yet another specific example of the present invention, according to still another specific example of the present invention, according to still another specific example of the present invention, the first brushing surface is a roller and the second surface of the workpiece J t has a second metallized surface. Brushing the watch ® forms the first part pressed tightly against the workpiece: Imamaki. Apparatus The motor element is disposed adjacent to the second brushed surfaced surface. Application, system: It is configured to supply a second solution to the second metalized surface. According to another embodiment of the present invention, the first brushed surface is provided. The first brushing surface is perforated. The first brushed surface is porous. The first brushing surface is a roller, which constitutes the first brushing surface to be perforated. The first brushed surface is porous. The flattening side of the metallized surface on the work piece I set two% into a specific example, the flattening of the metallized surface on the work piece 1 :: $ Yuan! Supply =, constitutes a tight pan on the metallization table of the workpiece, β is placed adjacent to the brushed surface; press the brushed surface tightly against the metal = surface, and cause the relative movement between the workpiece and the brushed surface, and the electro-hydraulic metallized surface And the potential difference between the metallized surface of the workpiece and the conductive element. = A further specific example of Ershifa Sun and Moon, a flattening device with at least one metallized surface, including a plurality of scrubbing rollers, each roller having

V. Description of the invention (6) _______ The conductive element and the longitudinal axis, and each of them constitute a brushing roller to press the metallized surface around each longitudinal $ ^ f. The motor assembly is on the metallized surface of the workpiece and guides ^ ^. The device also contains a power supply mechanism and an application mechanism, which constitutes a potential difference between several components; and a solution diagram to supply an electrolyte solution. The same i: month j K is described below with reference to the drawings, where the same symbols indicate ΐ ^ ί Schematic diagram of the electric engraved battery in the known art; ^ The picture is a cross-sectional view of a substrate with a metal layer; = 3 is a metal filling Sectional view of the substrate of the trench; FIG. 4 is a schematic side view of a specific example of the ECMP device of the present invention; FIG. 5 is a schematic side view of another specific example of the ECP device of the present invention; A schematic side view of a specific example. Man riding instructions The following are only specific examples and are not intended to limit the scope, applicability, or configuration of the invention. Instead, it is used to explain specific examples for implementing the present invention. The specific examples can be variously modified in terms of the function and arrangement of the elements without departing from the scope of the present invention.

Fig. 4 is a schematic view showing a specific example of an electrochemical leveling (ECP) device 100 according to the present invention. The ECP device 300 can use standard cleaning devices, using "pancake" brush pads. A typical cleaning device using wafer-type brush pads is contained in U.S. Patent Nos. 5,114,7,11 issued to Gi 11 on September 8, 1982, and 1999 US Patent No. 5,870,793 issued to Chof fat et al. On June 16th, both of which are incorporated herein by reference. This type of cleaning device is typically used for cleaning

491750 V. Description of the invention (7) Wash the semiconductor wafer after chemical mechanical planarization to remove the slurry particles left on the wafer surface. This flat wafer gasket is typically fixed to the installation with adhesive, and the mounting plate is attached to the support using bolts, machine screws or other mechanical fasteners. The f-chip is a part of the wafer cleaning machine. The machine rotates the mounting plate and the gasket, which is closely related to the main flat surface of the semiconductor wafer to be cleaned. Referring to Fig. 4 ', the wafer 4 () having opposite metallized surfaces 401) and 40c is supported by a plurality of wafer holders 50, which are in contact with the wafer 4o along the peripheral side 40a. The device 30 contains two cleaning components. The first two cleaning members are dish-shaped brushes 60a and 60b 'η, which are on the opposite sides 40b and 40c of wafer 40, and frictionally combined with the opposite sides of wafer 40 to be cleaned. The surfaces of the brushes 60a and 60b are close to the surfaces 40b and 40c, respectively, and have a plurality of vertically extending protrusions 130. Each protrusion ′ is cylindrical, with exposed flat ends, and is substantially coplanar with the exposed ends of the other protrusions. The brushes 60 a and 60 b constitute a rotation about an upright axis 80. In addition, the brushes 60a and 60b can be shaken with respect to the wafer 40 in the directions of arrows B and D. In addition, the brushes 60a and 6 Ob are movable relative to the wafer 40 in a swinging manner. The third cleaning member is a roller 70, which is bonded to the peripheral side of the wafer 40 by friction of 403 to clean this edge. The roller 70 is configured to rotate around the upright axis 90. Although the device shown in FIG. 4 only uses one roller 70, it should be noted that two or more rollers 70 can also be used. In addition, the device 30 may not use a roller 70, and it is dependent on the brushes 60a and 60b to remove copper shavings from the side 40a. '' The hardness and density of the brushes 60a and 6Ob and the roller are selected according to the type of material to be flattened. The brush may be made of polyvinyl acetate (PVA), polyurethane, or any other suitable material that can be frictionally bonded to the wafer 40 to smooth the wafer 40 and remove copper. Brushes 60a and 60b should be thick enough to prevent

Page 12 491750 V. Description of the invention (8) The wafer 40 is in direct contact with the conductive members 12 & In addition, since the conventional brushes are generally non-conductive, the brushes 60a and 60b should be uniformly perforated with many holes 160, allowing the surfaces 40b and 40c of the wafer 40 and conductive members 12 0 a = 1 2 0 Conduction between b. In addition, the brushes 60a and 60b may have porosity so as to allow the surfaces 40b and 40c of the wafer 40 and the conductive members 120 and 120b to be held between the wafers 40 using the wafer holder 50. The rest position, or the wafer holder 50 is configured to rotate around its upright axis, so when the brushes 60a and 60b rotate around their axis 80, the wafer 400 rotates around the axis at the same time. In addition, the device 30 oscillates f 40 instead of rotating, and flattens the wafer 40. An example of polishing using a swing handle is described in U.S. Patent No. 5,5,54,064 issued to Brievogei et al. On September 10, 1996 for details. Leveling, the device 30 also includes the upper and lower circles 40 of the conductive member i20woi20b. The electrical component i20a may be made of a metal such as steel or any suitable conductive material. Structure = 120a and 120b and the metallized surface of the wafer 40, respectively. 1 LT LT150 supplies positive electricity to the surfaces 40b and 40c of the wafer 40 ^ supplies negative charges to the conductive members 12a and 120b, and then performs a potential difference. Although the concrete example of Figure 4 shows the two voltage sources, it should be noted that any number of possible potential differences between the difference ma and 120b and the wafer 40 can be used. The electrolyte leveling solution can be applied using a pipe i. In addition, it should be noted that the leveling solution can also be supplied through the brushes 60a and 60b (not shown in the figure) and the holes 160 'or using any appropriate distribution to:

Page 13 Stomach / 50 I, I state (9) The shellfish solution can contain ammonium phosphate 'phosphoric acid, copper sulfate, osmic acid, chromic acid materials and / or additives, and can also be used for this material and conventional CMP slurry. In group S, when the device 30 is in operation, the brushes 60a and 6 Ob are pressed against the surfaces 40b and 40c with the required force, respectively, while rotating around their upright axes respectively. The brush 6 0 & port 6 0 13 is preferably pressed against the surface 4 0 13 and 0 c ′ at a pressure of about 0 51 ^ 1 or less, although any suitable pressure that can promote flattening can be used. Wafer holder Stomach 〇 can also rotate around its upright axis, so that the wafer 400 can rotate around the axis 100. When the electrical component 120a and 12 Ob and the metallized surface 40b and 40c of the wafer 40 have a potential difference, metal ions are released from the surfaces 40a, 40b, and 40c of the wafer 40, so that the metal is deplated from the wafer.

After leveling is completed, the metal left from the metallized surface and the remaining exposed barrier layer 20, as shown in Figure 2, can be etched using standard etching methods such as wet etching, steam etching, plasma etching, or chemical mechanical The flat surface is removed because the wafer surface has just been substantially flattened by the present invention. The choice of etching method and chemistry depends on the chemistry of the barrier layer. Although in the above specific example, the metallized surfaces of 40 b and 40 c on both sides of the wafer 40 are substantially removed, it should be noted that the device 30 may be modified so that the electrochemical planarization is performed on only one surface of the wafer. For example, the wafer 40 can be supported on the side surface 40c by a conventional rotating platform, and can be electrified and flattened on the side surface 40b selectively.

The advantage of the ECP device of the present invention is that the wafer is electrochemically etched and mechanically cleaned at the same time, the metallized surface is removed from the high terrain area first, and then uniformly etched and leveled. The electrochemical etching of the present invention can achieve a high removal rate at low pressure, and reduce pitting and oxide erosion. Another advantage is that the standard washing unit can be retrofitted

Page 14 491750 V. Description of the invention (10) To perform ECP, there is no need to purchase a dedicated ECP machine, thus reducing additional equipment costs. Referring to FIG. 5, a modified specific example 200 of the ECP device of the present invention can use a brush roller to flatten a wafer having metallized surfaces on both sides. For discussions on the cleaning devices of the building idlers and eaters, please refer to ^ ㈣ 年 丨 丨 月? Issued a license to use the roll

Shurtliff U.S. Patent No. 5,9 75,094, the contents of which are incorporated herein by reference. The wafer 2 1 0 having opposite metallized surfaces 2 1 0 b and 2 1 0 c is supported by a plurality of wafer holders 220 in contact with the wafer 210 along the peripheral side surface 210 a. The device 200 contains three cleaning components. The first two cleaning members are brush rollers 2 4 0a and 2 4 0 b, and metallized surfaces 2 1 0b and 2 1 0c adjacent to the wafer 2 10 are provided, and can be rubbed with both sides of the wafer 2 10 Combine and clean it up. The brush rollers 2 400a and 2401) should be substantially cylindrical, constituting rotations about the respective longitudinal axes 25 ° and 2601), and a translational movement across the surface of the wafer 210. The brush rollers 240a and 240b may be made of PVA, PVA, polyurethane, or any suitable material. In addition, the brush rollers 2 40 a and 2 0 0b should be uniformly perforated to have a plurality of holes 3 2 0, allowing the surfaces 210b and 210c of the wafer 210 to conduct electricity between the conductive members 260a and 260b. In addition, the brush rollers 2 4 0 a and 2 4 0 b may have porosity so as to allow conduction between the surfaces 21 Ob and 210c of the wafer 210 and the conductive members 2 6 0a and 2 6 Ob. The third cleaning member is a roller 270, which can be frictionally combined with the peripheral side 21a of the wafer 21 to clean this edge. The roller 270 is configured to rotate about the upright axis 280. Although the device shown in FIG. 5 uses only one roller 270, two or more rollers 270 may be used. In addition, the device 200 may not use the roller 270, but relies on the brush rollers 240a and 240b to remove copper from the side 21a.

Page 15 V. Description of the invention (11) The wafer 210 can be held in a static position by using the wafer support 22 0, and ^ 20 constitutes rotation about its upright axis, the brush roller 24 0 &, the axis 2 5 When 0a and 2 50b are rotated, the wafer is rotated around the axis 290. For galvanic smoothing, each brush roller 24o & 24b contains a conductive member, which is a conductive member 260a and 260b, respectively. The conductive members 26a and 260b are located in the brush rollers 24a and 240b, respectively, and extend approximately the entire length of the brush rollers 24a and 240b. A voltage source of 300 and 31 was used to apply a positive charge to the surface of the wafer with "and 2100", and a negative charge was applied to the conductive members 26 and 261), while the conductive members 260a and 260b and the wafer 2.10 metallized surface 21ob and 2 1 0 c 'successive potential difference. Although the specific example shown in Figure 5 has two voltage sources', the conductive potential difference between the conductive members 2 6 0a and 2 6 0b and the wafer 210 Any number of conventional techniques can be used. The electrolyte leveling solution containing the electrolyte solution or the electrolyte solution combined with the conventional CMP slurry can pass through the brush rollers 2 4 0 a and 2 4 0 b and the holes 3 2 0 , Or use any suitable "knife with 70 pieces of supply. When the device 200 is in operation, the brush rollers 240a and 240b are pressed against the surfaces 2 1 0 b and 2 1 0 c, respectively, while rotating around their respective longitudinal axes. The wafer support 220 can also be rotated around its upright axis, so that the wafer 2 is rotated around the axis 290. The electrolyte leveling solution is supplied to both surfaces 210b and 210c of the wafer 210. When a potential difference is established between the conductive members 260 a and 260 b and the metallized surfaces 210 b and 210 c of the wafer, metal ions are released from the sides 2 1 0 a, 2 1 0 b, 210c of the wafer 2 ′, resulting in metallization. The surface is stripped from the wafer. Although a specific example of the present invention is shown in FIG. 5, two brush rollers located on the opposite surfaces 2 1 0 b and 2 1 0 c of the wafer are used, and the surface is electrified at the same time.

Page 16 491750 V. Description of the invention (12) Leveling, but it must be understood that the present invention can also use a single roller brush to level one surface of the wafer. In addition, there may be a plurality of on one surface of the wafer, and the surface is flattened. FIG. 6 shows still another specific example of the present invention, which is for electrochemically planarizing a wafer having at least one metallized surface, and constitutes a cleaning station 400. The cleaning station 400 can be set in a larger machine that processes or cleans semiconductor wafers (or other workpieces), such as US Patent w 5, issued to Peterson et al. On September 14, 1999. The full contents of 9 5 0, 32 7 are included here. The cleaning station 400 should include a container, such as a cleaning tank, containing a plurality of pairs of brush rollers. The cleaning station 400 includes a bottom plate 412, a top plate 414, a side plate 410, a rear plate (not shown in the figure), and a front plate (not shown in the figure). Therefore, the plates include a self-contained box, and when one or more brush rollers need to be replaced, the handle 42 can be quickly and easily removed and replaced. The cleaning station 400 includes a plurality of pairs of brush rollers, which constitute a driving wafer, and pass through the cleaning box, while simultaneously flattening the flat surface of the top and / or bottom of the wafer passing therethrough. As shown in Fig. 6, the cleaning station 400 is 416, which constitutes a wafer-receiving-in-a-round 2 driving roller (detailed later), that is, "grasping" the wafer and feeding the ΛΛ roller forward. 4 Cleaning station 4 0 〇 There can be any preparations. Figure 6 only shows the pair of rollers, although for convenience, the cleaning box contains the cleaning station for the first and the second brushes and wheels. Specific examples in the illustration • 篦 -pair, 、 衰 α ^ ”/ 衮 wheels, including individual rollers 430 and 432, Di Yi W / agricultural wheels, including h brush show, 呑 four pairs of rollers, including Ιϊίί wheel if 434 and lower brush roller 440; eighth brush roller 442 and lower brush roller 444; fifth pair

491750 V. Description of the invention (13) _ Roller 'including upper brush roller 446 and lower brush roller 44 terminal roller, including upper brush roller 45 and lower brush' 6th pair 4⑽, wafers enter from far left , Then was forced to pass the station round ^ 52. / Manage the station (take rollers 450 and 452) to leave the station. Your right bearing m ^ η odd number of rollers (that is, the first pair of rollers 430, 432, the first-thickness 438,440, and the fifth pair of rollers 446,448), and the second pair of rollers, each pair of driving rollers at the driving speed s〗 The function of the moving roller 432, 438, 440, 446, 448 is the driving speed ^, the brush roller 430, the wheel, that is, the roller 432,436,440,444 "81 ^ = 2. The bottom brush roller is shown in the figure. In addition, each even brush , Bismuth 2j 转动 clockwise rotation, 442, 450 'also brush clockwise ^ roller top brush roller 434, roller 430, 438, 446, it should be reversed to pick up' each odd number of the top of the roller even number The rollers (for example, the second and the $ directions are rotated. The operation speed is S2. The odd pairs of rollers (the fourth and sixth pairs) should be formed (not shown)), so that the wafer is basically taken first and the first Drive motor (400 on the picture. Each even-numbered pair of wheels is best driven and the sentence rate is driven through the cleaning station. In this way, the operator can set the drive to drive at the processing speed S2. 'Control the drive speed S1, also ^ The first controller associated with the first motor can control the processing speed independently. The second controls S1 and S2 associated with the two motors can be set up individually within the cleaning station 4 00 ^ = operator dynamics although the above-mentioned wheel speed is as described above. The actual number can be used as shown in any figure. Any combination of directions in the context of the present invention. For example, you can select various arrangements of the speed and direction of two, one, three, or even more rollers to achieve the desired use.

Page 18 491750

5. Description of invention (14). Each even-numbered pair of brush rollers 434, 436, 442, 444, 450, 452 contains conductive members 454, 456, 458, 460, 46 2, 464, respectively. The conductive member 454, $ 5 6 ″ = 8, 4 6 0, 4 6 2, 4 6 4 is located in it, and extends over almost the entire length of the individual brush roller. The brush rollers 434, 436, 442, 444, 45, 452 may be made of polyvinyl acetate (PV A), polyurethane, or any other suitable material. In addition, the vertical brush rollers are preferably uniformly perforated, so that the conductive member and the wafer can be guided. Secondly, these brush rollers can also have porosity, so that the conductive member and the crystal can be conductive.

# ^ ΪΪ 4 1 4 may also contain one or more fluid inlets (not shown in the figure), configured to separate parts or the whole inside the cleaning station 400. The top panel governor (not shown in the figure) is configured to deliver fluid to the Qingping site. For example, the top plate 414 may include an electrolysis 1 lm: ί: a main pipe, a second manifold for conveying conventional slurry, and a second main pipe for conveying 3 ^ =. Each of the individual headers is not connected to other headers. Two f 2, one or more fluid inlets can be connected together to make a single stream $ i: η,: or more. The manifold can be configured to distribute fluid between adjacent brushes ^-said circle: S. This configuration allows fluid to pass through the cleaning station 1 ϊ = ^. The 4 station 400 may also include a fluid outlet (not shown in the figure), and the electrolysis shell / valley fluid can pass through in the flat-^ ^ ψ η π ^. Recycling, discarding or disposing of the electrolyte solution withdrawn from the body outlet as needed

Page 19 491750 V. Description of the invention (15) Distributed to the roller, the potential difference is established between the conductive member of the brush roller and the wafer. When the wafer is pushed by the brush rollers 434, 436, 442, 444, 450, 454, metal ions are released from the metallized surface, and the metallized surface is deplated. When the wafer is in contact with the brush roller, it is further smoothed by the abrasive action of the brush roller and any abrasive particles in the leveling solution. As a result, the high terrain area of the metallized surface is removed, and then uniformly etched and leveled. Although the present invention has been described above with reference to the accompanying drawings, it should be understood that the present invention is not limited thereto. The above-mentioned components and the steps described using the device of the present invention may have various modifications and configurations without departing from the spirit and scope of the present invention within the scope of the appended patent application.

Page 491750 Brief description of the drawings. Figure 1 is a schematic diagram of an electric engraved battery in a known technology. Figure 2 is a sectional view of a substrate with a metal layer. Figure 3 is a fragment of a substrate with a metal filling groove. Figure 4 is a schematic side view of a specific example of an ECMP device of the present invention; Figure 5 is a schematic side view of another specific example of an ECP device of the present invention; Figure 6 is a schematic side view of another specific example of an ECP device of the present invention

Page 21

Claims (1)

491750 VI. Application for patent scope 1. An electric leveling device for leveling a workpiece, the workpiece having at least one metallized surface and a peripheral surface, the device comprising: (a) a first brushing surface constituting at least one metallization with the workpiece Surface friction bonding; (b) a first drive assembly to make the workpiece and the first brushing surface relatively move; (c) a first conductive element disposed near the first brushing surface; (d) a first power supply , Forming a potential difference between the at least one metallized surface of the workpiece and the first conductive element; and (e) a first solution application mechanism, constituting a person who supplies an electrolyte solution to the first metallized surface. 2. For example, the electrochemical leveling device of the scope of patent application, wherein the workpiece has a second metallized surface, and the device further includes: (a) a second brushing surface, which forms friction with the second metallized surface of the workpiece Combining; (b) a second conductive element disposed close to the second scrubbing surface; and (c) a second solution application mechanism, constituting a person supplying an electrolyte solution to the second metallized surface. 3. If the electric leveling device of the second scope of the patent application, further includes: (a) a second drive assembly, which constitutes a relative movement between the workpiece and the second brushing surface. 4. For the electrochemical leveling device according to item 2 of the patent application scope, wherein the first drive assembly constitutes a relative movement between the workpiece and the second brushing surface. Page 22 491750 6. Scope of patent application • 5. If the electrochemical leveling device of item 2 of the scope of patent application, also includes: (a) a second power supply, which constitutes the second metallized surface of the workpiece and the second Those with a potential difference between the conductive elements. 6. The electrochemical leveling device according to item 2 of the patent application, wherein the first power supply constitutes a potential difference between the second metallized surface of the workpiece and the second conductive element. 7. For example, the electrochemical flattening device of the scope of application for patent includes at least one edge brushing surface, which constitutes the pressing of the peripheral surface of the workpiece. 8. If the electrochemical flattening device of item 2 of the patent application scope, includes at least one edge brushing surface, which constitutes the pressing of the peripheral surface of the workpiece. 9. The electrochemical leveling device according to item 1 of the application, wherein the relative motion is selected from the group consisting of: linear motion, swing, orbiting motion, linear motion and swinging, linear motion and orbiting motion, swinging and orbiting motion, linear motion, Swing and surround athletes. 10. The electrochemical leveling device according to item 3 of the patent application, wherein the relative motion is selected from the group consisting of: linear motion, swing, orbital motion, linear motion and swing, linear motion and orbital motion, swing and orbital motion, linear motion, Swing and surround athletes. 11. The electrochemical leveling device according to item 4 of the patent application, wherein the relative motion is selected from the group consisting of: linear motion, swing, orbital motion, linear motion and swing, linear motion and orbital motion, swing and surround motion, linear motion, Swing and surround athletes. 12. For the electrochemical leveling device according to the scope of patent application, the first brushing surface is dish-shaped. Page 23 491750 6. Scope of patent application 13. For the electrochemical leveling device according to item 12 of the patent application scope, the first brushing surface constitutes a person who rotates about the central axis. 14. For the electrochemical flattening device according to item 12 of the application, wherein the first brushed surface is a perforator. 15. The electrochemical leveling device according to item 12 of the patent application, wherein the first brushed surface is porous. 16. The galvanic leveling device according to item 1 of the patent application range, wherein the first brushing surface is a roller, constituting a person rotating about a longitudinal axis. 1 7. The electrochemical flattening device according to item 16 of the patent application scope, wherein the first brushed surface is a puncher. 1 18. The electrochemical leveling device according to item 16 of the application, wherein the first brushed surface is porous. _ 19. If the electric leveling device of the second patent application scope, wherein the second brushing surface is dish-shaped. 20. The electrochemical flattening device according to item 19 of the patent application scope, wherein the second brushing surface constitutes a person rotating about a central axis. 21. The electrochemical leveling device according to item 19 of the application, wherein the second brushed surface is a puncher. _ 22. If the electrochemical leveling device of item 19 of the patent application scope, wherein the second _ brushed surface is porosity. 23. The electrochemical flattening device according to item 2 of the patent application, wherein the second brushing surface is a roller, constituting a person rotating about a longitudinal axis. 24. For the electric leveling device of the scope of application for item 23, wherein the first Page 24 491750 VI. Scope of patent application 25. If applied Second brushing the surface (a) Lifting and rubbing; (b) Lifting (c) Putting the brushing table (d) in (e) out of position. 27. If the application is selected from the group consisting of:, linear motion and orbital movement 28. If the application is disc-shaped, and the 29. If the application surface is a hole puncher 30. If the application surface is porosity 31 • As the application roller, and the 32 . For example, linear motion, swing, ring-and-circle motion, and swing-and-motion of the patent application No. 26. The method of claiming item 26 of the patent also includes the method of brushing the item of claim 28, wherein the first brushing table claims the porosity of the item 23 of the patent scope. 26. A brushed surface for a metallized surface on a workpiece, which constitutes and supplies a conductive element, and is provided to move relative to the gold surface by pressing the brushed surface; the metallized surface supplies the workpiece with the metallized meter electrochemical leveling device Wherein the first leveling method includes: the metallized surface of the workpiece approaches the brushed surface; the metalized surface causes a degraded solution of the workpiece; and an electric method is performed between the surface and the conductive 70 piece, wherein the relative The motion is a method of orbiting motion, linear motion and swinging circular motion, linear motion, and pendulum method, wherein the brushing surface is a person who rotates the surface about a central axis. The method according to item 28 of the patent, wherein the first brushing the watch. The method of claim 26 includes the method of brushing. The method of claim 31, wherein the brushing surface is a surface rotating about the longitudinal axis. Method in which the first scrubbing table Page 25 491750 VI. Scope of patent application Face puncher. 3 3. The method according to item 31 of the scope of patent application, wherein the first brushing surface is porous. 3 4. An electric leveling device for a workpiece, the workpiece has at least one metallized surface, the device includes · (a) a plurality of brushing rollers, each having a longitudinal axis, and each constituting friction with the at least one metallized surface of the workpiece In combination, each of the plurality of brushing rollers includes a conductive element, (b) a driving assembly, which constitutes each of the plurality of brushing rollers to rotate about the longitudinal axis; (c) power supply, which is formed on the at least one metalized surface of the workpiece and A potential difference between the conductive elements; and (d) a solution application mechanism, which constitutes a supply of an electrolyte solution to the metallized surface. 3 5. The device according to item 34 of the patent application scope, wherein each of the plurality of brushing rollers is punched. 36. The device according to item 34 of the patent application, wherein the plurality of brushing rollers each have porosity. Page 26