JP2016507004A5 - - Google Patents
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- Publication number
- JP2016507004A5 JP2016507004A5 JP2015555746A JP2015555746A JP2016507004A5 JP 2016507004 A5 JP2016507004 A5 JP 2016507004A5 JP 2015555746 A JP2015555746 A JP 2015555746A JP 2015555746 A JP2015555746 A JP 2015555746A JP 2016507004 A5 JP2016507004 A5 JP 2016507004A5
- Authority
- JP
- Japan
- Prior art keywords
- sputtering target
- mixture
- sputtering
- oxide
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000005477 sputtering target Methods 0.000 claims 14
- 239000000203 mixture Substances 0.000 claims 13
- 229910052718 tin Inorganic materials 0.000 claims 10
- 239000011701 zinc Substances 0.000 claims 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 7
- 238000004544 sputter deposition Methods 0.000 claims 7
- 229910052725 zinc Inorganic materials 0.000 claims 7
- 229910052733 gallium Inorganic materials 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000000523 sample Substances 0.000 claims 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000004458 analytical method Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000011246 composite particle Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000001878 scanning electron micrograph Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000007751 thermal spraying Methods 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13154037 | 2013-02-05 | ||
| EP13154037.9 | 2013-02-05 | ||
| PCT/EP2014/052134 WO2014122120A1 (en) | 2013-02-05 | 2014-02-04 | (ga) zn sn oxide sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016507004A JP2016507004A (ja) | 2016-03-07 |
| JP2016507004A5 true JP2016507004A5 (https=) | 2016-04-14 |
Family
ID=47720328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015555746A Ceased JP2016507004A (ja) | 2013-02-05 | 2014-02-04 | （Ｇａ）ＺｎＳｎ酸化物スパッタリングターゲット |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9758856B2 (https=) |
| EP (1) | EP2953915B1 (https=) |
| JP (1) | JP2016507004A (https=) |
| KR (1) | KR20150115906A (https=) |
| BE (1) | BE1021021B1 (https=) |
| ES (1) | ES2615933T3 (https=) |
| PL (1) | PL2953915T3 (https=) |
| WO (1) | WO2014122120A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017179595A (ja) * | 2016-03-28 | 2017-10-05 | 日立金属株式会社 | スパッタリングターゲット材およびその製造方法 |
| WO2019079207A1 (en) * | 2017-10-16 | 2019-04-25 | Materials Science International, Inc. | PROCESS FOR PRODUCTION OF CATHODIC SPUTTER TARGET IN ZINC STANNATE |
| BE1025799B1 (nl) | 2017-12-18 | 2019-07-19 | Soleras Advanced Coatings Bvba | Gespoten lithiumcobaltoxide-targets |
| KR20240013218A (ko) | 2021-06-04 | 2024-01-30 | 제이엑스금속주식회사 | 스퍼터링 타깃 및 그 제조 방법 |
| US20250075308A1 (en) | 2022-01-05 | 2025-03-06 | Jx Advanced Metals Corporation | Oxide film and oxide sputtering target |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5171411A (en) * | 1991-05-21 | 1992-12-15 | The Boc Group, Inc. | Rotating cylindrical magnetron structure with self supporting zinc alloy target |
| JPH05156431A (ja) | 1991-11-29 | 1993-06-22 | Asahi Glass Co Ltd | 回転カソードターゲットの製造方法 |
| EP0852266B1 (en) * | 1995-08-23 | 2004-10-13 | Asahi Glass Ceramics Co., Ltd. | Target, process for production thereof, and method of forming highly refractive film |
| GB9600210D0 (en) | 1996-01-05 | 1996-03-06 | Vanderstraeten E Bvba | Improved sputtering targets and method for the preparation thereof |
| JPH1068072A (ja) | 1996-08-26 | 1998-03-10 | Japan Energy Corp | Ｉｔｏシリンドリカルターゲットおよびその製造方法 |
| CN1369572A (zh) | 2001-04-03 | 2002-09-18 | 中国科学院长春光学精密机械与物理研究所 | 氧化物透明导电薄膜材料 |
| KR100873088B1 (ko) * | 2004-10-01 | 2008-12-09 | 미쓰이 긴조꾸 고교 가부시키가이샤 | 스퍼터링 타깃용 타깃재의 제조 방법 |
| JP5395994B2 (ja) * | 2005-11-18 | 2014-01-22 | 出光興産株式会社 | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ |
| JP4552950B2 (ja) | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
| KR101137906B1 (ko) * | 2006-08-03 | 2012-05-03 | 삼성코닝정밀소재 주식회사 | 회전식 타겟 어셈블리 |
| WO2009078330A1 (ja) | 2007-12-19 | 2009-06-25 | Hitachi Metals, Ltd. | 酸化亜鉛焼結体およびその製造方法、スパッタリングターゲット、このスパッタリングターゲットを用いて形成された電極 |
| JP5024226B2 (ja) | 2008-08-06 | 2012-09-12 | 日立金属株式会社 | 酸化物焼結体およびその製造方法、スパッタリングターゲット、半導体薄膜 |
| JP5679315B2 (ja) | 2010-03-31 | 2015-03-04 | 日立金属株式会社 | 円筒型Ｍｏ合金ターゲットの製造方法 |
| JP2012107296A (ja) * | 2010-11-18 | 2012-06-07 | Tosoh Corp | セラミック溶射円筒ターゲットの製造方法 |
| DE112012007295B3 (de) * | 2011-06-08 | 2022-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zum Herstellen eines Sputtertargets und Verfahren zum Herstellen einer Halbleitervorrichtung |
| CN102286717B (zh) * | 2011-09-01 | 2013-07-03 | 基迈克材料科技（苏州）有限公司 | 以等离子喷涂制备圆柱形大面积镀膜靶材及方法 |
-
2014
- 2014-02-04 ES ES14702604.1T patent/ES2615933T3/es active Active
- 2014-02-04 EP EP14702604.1A patent/EP2953915B1/en active Active
- 2014-02-04 KR KR1020157024134A patent/KR20150115906A/ko not_active Withdrawn
- 2014-02-04 US US14/765,873 patent/US9758856B2/en active Active
- 2014-02-04 BE BE2014/0062A patent/BE1021021B1/nl not_active IP Right Cessation
- 2014-02-04 JP JP2015555746A patent/JP2016507004A/ja not_active Ceased
- 2014-02-04 WO PCT/EP2014/052134 patent/WO2014122120A1/en not_active Ceased
- 2014-02-04 PL PL14702604T patent/PL2953915T3/pl unknown
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