JP2016505222A - ワイヤボンドビアを有するマイクロ電子パッケージ、その製造方法、およびそのための補強層 - Google Patents

ワイヤボンドビアを有するマイクロ電子パッケージ、その製造方法、およびそのための補強層 Download PDF

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Publication number
JP2016505222A
JP2016505222A JP2015556174A JP2015556174A JP2016505222A JP 2016505222 A JP2016505222 A JP 2016505222A JP 2015556174 A JP2015556174 A JP 2015556174A JP 2015556174 A JP2015556174 A JP 2015556174A JP 2016505222 A JP2016505222 A JP 2016505222A
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Prior art keywords
wire
bond
forming
layer
bonding
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Pending
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JP2015556174A
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Japanese (ja)
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JP2016505222A5 (https=
Inventor
フィリップ ダンバーグ
フィリップ ダンバーグ
シジュン チャオ
シジュン チャオ
エリス チャウ
エリス チャウ
ロズアン アラトレ
ロズアン アラトレ
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インヴェンサス・コーポレイション
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Priority claimed from US13/757,677 external-priority patent/US9136254B2/en
Priority claimed from US13/757,673 external-priority patent/US8940630B2/en
Application filed by インヴェンサス・コーポレイション filed Critical インヴェンサス・コーポレイション
Publication of JP2016505222A publication Critical patent/JP2016505222A/ja
Publication of JP2016505222A5 publication Critical patent/JP2016505222A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/26—Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/271—Configurations of stacked chips the chips having passive surfaces facing each other, i.e. in a back-to-back arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/28—Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Wire Bonding (AREA)
JP2015556174A 2013-02-01 2014-01-31 ワイヤボンドビアを有するマイクロ電子パッケージ、その製造方法、およびそのための補強層 Pending JP2016505222A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/757,677 2013-02-01
US13/757,677 US9136254B2 (en) 2013-02-01 2013-02-01 Microelectronic package having wire bond vias and stiffening layer
US13/757,673 2013-02-01
US13/757,673 US8940630B2 (en) 2013-02-01 2013-02-01 Method of making wire bond vias and microelectronic package having wire bond vias
PCT/US2014/014181 WO2014121090A1 (en) 2013-02-01 2014-01-31 Microelectronic package having wire bond vias, method of making and stiffening layer for same

Publications (2)

Publication Number Publication Date
JP2016505222A true JP2016505222A (ja) 2016-02-18
JP2016505222A5 JP2016505222A5 (https=) 2017-03-09

Family

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Family Applications (1)

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JP2015556174A Pending JP2016505222A (ja) 2013-02-01 2014-01-31 ワイヤボンドビアを有するマイクロ電子パッケージ、その製造方法、およびそのための補強層

Country Status (5)

Country Link
JP (1) JP2016505222A (https=)
KR (1) KR101994954B1 (https=)
CN (1) CN105074914B (https=)
TW (1) TWI570864B (https=)
WO (1) WO2014121090A1 (https=)

Cited By (3)

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JP2020535404A (ja) * 2017-09-29 2020-12-03 ディテクション テクノロジー オイ 統合型放射線検出器デバイス
JP2022180202A (ja) * 2021-05-24 2022-12-06 キオクシア株式会社 半導体装置およびその製造方法
US11990859B2 (en) 2018-05-28 2024-05-21 Borealis Ag Devices for a photovoltaic (PV) module

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US9446943B2 (en) 2013-05-31 2016-09-20 Stmicroelectronics S.R.L. Wafer-level packaging of integrated devices, and manufacturing method thereof
US9802813B2 (en) 2014-12-24 2017-10-31 Stmicroelectronics (Malta) Ltd Wafer level package for a MEMS sensor device and corresponding manufacturing process
JP6271463B2 (ja) 2015-03-11 2018-01-31 東芝メモリ株式会社 半導体装置
US10249515B2 (en) * 2016-04-01 2019-04-02 Intel Corporation Electronic device package
US10002844B1 (en) * 2016-12-21 2018-06-19 Invensas Bonding Technologies, Inc. Bonded structures
CN110504172B (zh) * 2018-05-16 2024-12-17 盛合晶微半导体(江阴)有限公司 垂直打线结构、堆叠芯片封装结构及方法
TWI845013B (zh) * 2022-11-08 2024-06-11 京元電子股份有限公司 半導體封裝組件及半導體封裝基板模組
CN116031216B (zh) * 2023-01-30 2026-01-30 甬矽电子(宁波)股份有限公司 扇入型封装结构及其制备方法

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JPS5032196B1 (https=) * 1970-11-13 1975-10-18
JPS61102745A (ja) * 1984-10-26 1986-05-21 Toshiba Corp 半導体装置
JP2000058603A (ja) * 1998-08-10 2000-02-25 Fuji Electric Co Ltd 超音波ワイヤボンダ
JP2001118876A (ja) * 1999-08-12 2001-04-27 Fujitsu Ltd 半導体装置及びその製造方法
JP2003318216A (ja) * 2002-04-25 2003-11-07 Denso Corp ワイヤボンディング方法
JP2012256861A (ja) * 2011-05-17 2012-12-27 Shinkawa Ltd ワイヤボンディング装置及びボンディング方法

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JP5120266B6 (ja) * 2007-01-31 2018-06-27 富士通セミコンダクター株式会社 半導体装置及びその製造方法
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KR101128063B1 (ko) * 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
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JPS5032196B1 (https=) * 1970-11-13 1975-10-18
JPS61102745A (ja) * 1984-10-26 1986-05-21 Toshiba Corp 半導体装置
JP2000058603A (ja) * 1998-08-10 2000-02-25 Fuji Electric Co Ltd 超音波ワイヤボンダ
JP2001118876A (ja) * 1999-08-12 2001-04-27 Fujitsu Ltd 半導体装置及びその製造方法
JP2003318216A (ja) * 2002-04-25 2003-11-07 Denso Corp ワイヤボンディング方法
JP2012256861A (ja) * 2011-05-17 2012-12-27 Shinkawa Ltd ワイヤボンディング装置及びボンディング方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020535404A (ja) * 2017-09-29 2020-12-03 ディテクション テクノロジー オイ 統合型放射線検出器デバイス
US11990859B2 (en) 2018-05-28 2024-05-21 Borealis Ag Devices for a photovoltaic (PV) module
JP2022180202A (ja) * 2021-05-24 2022-12-06 キオクシア株式会社 半導体装置およびその製造方法
JP7693393B2 (ja) 2021-05-24 2025-06-17 キオクシア株式会社 半導体装置の製造方法
US12482788B2 (en) 2021-05-24 2025-11-25 Kioxia Corporation Semiconductor device and method of manufacturing a semiconductor device

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Publication number Publication date
KR101994954B1 (ko) 2019-07-01
WO2014121090A1 (en) 2014-08-07
TW201448151A (zh) 2014-12-16
CN105074914A (zh) 2015-11-18
TWI570864B (zh) 2017-02-11
KR20150113179A (ko) 2015-10-07
CN105074914B (zh) 2018-06-01

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