JP2016505213A - 保護用組成物 - Google Patents
保護用組成物 Download PDFInfo
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- JP2016505213A JP2016505213A JP2015548826A JP2015548826A JP2016505213A JP 2016505213 A JP2016505213 A JP 2016505213A JP 2015548826 A JP2015548826 A JP 2015548826A JP 2015548826 A JP2015548826 A JP 2015548826A JP 2016505213 A JP2016505213 A JP 2016505213A
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- 239000000203 mixture Substances 0.000 title claims abstract description 51
- 230000001681 protective effect Effects 0.000 title claims abstract description 33
- 125000002524 organometallic group Chemical group 0.000 claims abstract description 50
- 239000011669 selenium Substances 0.000 claims abstract description 18
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 16
- 239000011593 sulfur Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 12
- 230000005693 optoelectronics Effects 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 76
- 239000011241 protective layer Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 239000011159 matrix material Substances 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 150000002891 organic anions Chemical class 0.000 claims description 11
- 239000011701 zinc Substances 0.000 claims description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000002341 toxic gas Substances 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract description 16
- 230000031700 light absorption Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 30
- 150000003346 selenoethers Chemical class 0.000 description 13
- 239000005083 Zinc sulfide Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 229910052984 zinc sulfide Inorganic materials 0.000 description 10
- -1 acetonate anions Chemical class 0.000 description 9
- 239000002096 quantum dot Substances 0.000 description 9
- 239000011575 calcium Substances 0.000 description 7
- 229910052791 calcium Inorganic materials 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 6
- 239000002159 nanocrystal Substances 0.000 description 5
- 239000013076 target substance Substances 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 150000004763 sulfides Chemical class 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 3
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004246 zinc acetate Substances 0.000 description 2
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical compound CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 description 1
- JDMMZVAKMAONFU-UHFFFAOYSA-N 2-trimethylsilylacetic acid Chemical compound C[Si](C)(C)CC(O)=O JDMMZVAKMAONFU-UHFFFAOYSA-N 0.000 description 1
- HRQDDZWMEGEOOO-UHFFFAOYSA-N 2-trimethylsilylpropanoic acid Chemical compound OC(=O)C(C)[Si](C)(C)C HRQDDZWMEGEOOO-UHFFFAOYSA-N 0.000 description 1
- DNNFJTRYBMVMPE-UHFFFAOYSA-N 4-[[3-carboxypropyl(dimethyl)silyl]oxy-dimethylsilyl]butanoic acid Chemical compound OC(=O)CCC[Si](C)(C)O[Si](C)(C)CCCC(O)=O DNNFJTRYBMVMPE-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- YNXRTZDUPOFFKZ-UHFFFAOYSA-N [In].[Ag]=S Chemical compound [In].[Ag]=S YNXRTZDUPOFFKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XJBVBGUCNBMKIH-UHFFFAOYSA-N alumane;ruthenium Chemical compound [AlH3].[Ru] XJBVBGUCNBMKIH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- JOGSGUQZPZCJCG-UHFFFAOYSA-L cadmium(2+);dibenzoate Chemical group [Cd+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 JOGSGUQZPZCJCG-UHFFFAOYSA-L 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- LJLWNMFUZWUGPO-UHFFFAOYSA-N calcium strontium disulfide Chemical compound [S--].[S--].[Ca++].[Sr++] LJLWNMFUZWUGPO-UHFFFAOYSA-N 0.000 description 1
- QDVBBRPDXBHZFM-UHFFFAOYSA-N calcium;selenium(2-) Chemical compound [Ca+2].[Se-2] QDVBBRPDXBHZFM-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical group [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- LNOZJRCUHSPCDZ-UHFFFAOYSA-L iron(ii) acetate Chemical compound [Fe+2].CC([O-])=O.CC([O-])=O LNOZJRCUHSPCDZ-UHFFFAOYSA-L 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- 231100000925 very toxic Toxicity 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- ZMLPZCGHASSGEA-UHFFFAOYSA-M zinc trifluoromethanesulfonate Chemical compound [Zn+2].[O-]S(=O)(=O)C(F)(F)F ZMLPZCGHASSGEA-UHFFFAOYSA-M 0.000 description 1
- CITILBVTAYEWKR-UHFFFAOYSA-L zinc trifluoromethanesulfonate Substances [Zn+2].[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F CITILBVTAYEWKR-UHFFFAOYSA-L 0.000 description 1
- JDLYKQWJXAQNNS-UHFFFAOYSA-L zinc;dibenzoate Chemical compound [Zn+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 JDLYKQWJXAQNNS-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C53/00—Saturated compounds having only one carboxyl group bound to an acyclic carbon atom or hydrogen
- C07C53/08—Acetic acid
- C07C53/10—Salts thereof
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
H2S+MX→MS+XH2 式I
式中、Mは有機金属ゲッタの金属原子を表し、Xは有機金属ゲッタの有機アニオンを表している。有機アニオン及び金属の酸化状態に依存して、式IはM、X及びH2Sの相対量に関して適していなければならない。有機金属ゲッタとセレン化物ガスとの反応についての対応する式は、以下(式II)の通りである。
H2Se+MX→MSe+XH2 式II
式中、Mは有機金属ゲッタの金属原子を表し、Xは有機金属ゲッタの有機アニオンを表している。有機アニオン及び金属の酸化状態に依存して、式IIはM、X及びH2Seの相対量に関して適していなければならない。
H2S+ZnX→ZnS+XH2 式Ia
式中、Xは有機金属ゲッタの有機アニオンを表している。対応する亜鉛とセレン化物ガスとの反応は、以下(式IIa)の通りである。
H2Se+ZnX→ZnSe+XH2 式IIa
式中、Xは有機金属ゲッタの有機アニオンを表している。
H2S+Zn(CH3)CO2)2→ZnS+(CH3CHO2)2 式Ib
Claims (15)
- 光電子デバイスに用いるための保護用組成物であって、金属と硫黄及び/又はセレンとを含む結晶を形成するために硫黄及び/又はセレンと反応することが可能な有機金属ゲッタを有する、当該保護用組成物。
- 前記有機金属ゲッタが、銅、鉄、カドミウム、鉛及び亜鉛よりなる群から選択される金属を有する、請求項1記載の保護用組成物。
- 前記有機金属ゲッタが亜鉛を有する、請求項1記載の保護用組成物。
- 前記有機金属ゲッタが有機アニオンを有する、請求項1記載の保護用組成物。
- ポリマを有するマトリクスを更に有する、請求項1記載の保護用組成物。
- 前記有機金属ゲッタが前記ポリマに化学結合された、請求項5記載の保護用組成物。
- 波長変換材料を更に有する、請求項1記載の保護用組成物。
- 請求項1記載の保護用組成物を有する、保護層。
- 請求項8記載の保護層と、波長変換材料を有する波長変換層とを有する、層アセンブリ。
- 前記波長変換材料が硫黄及び/又はセレンを有する、請求項7記載の保護用組成物又は請求項9記載の層アセンブリ。
- 請求項1記載の保護用組成物を有する、光学部品。
- 少なくとも1つの固体光源と、請求項1記載の保護用組成物とを有する、発光装置。
- 前記保護用組成物により少なくとも部分的に覆われた銀層を更に有する、請求項12記載の発光装置。
- 前記固体光源により発せられる光を受け取る波長変換材料を更に有し、前記波長変換材料は、前記保護用組成物により少なくとも部分的に覆われた、請求項12記載の発光装置。
- 波長変換材料から放出される腐食性又は有毒ガスを捕獲する有機金属ゲッタの使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201261739780P | 2012-12-20 | 2012-12-20 | |
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JP2019186305A (ja) * | 2018-04-04 | 2019-10-24 | シャープ株式会社 | 発光装置および製造方法 |
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US9620686B2 (en) * | 2015-01-28 | 2017-04-11 | Apple Inc. | Display light sources with quantum dots |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011178983A (ja) * | 2010-01-26 | 2011-09-15 | Yokohama Rubber Co Ltd:The | シリコーン樹脂組成物およびその使用方法、シリコーン樹脂、シリコーン樹脂含有構造体、ならびに光半導体素子封止体 |
WO2011132419A1 (ja) * | 2010-04-22 | 2011-10-27 | 日本化薬株式会社 | 銀変色防止剤、銀変色防止樹脂組成物、銀変色防止方法、及びこれを使用した発光ダイオード |
DE102010035110A1 (de) * | 2010-08-23 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Polymerkomposit, Verwendung des Polymerkomposits und optoelektronisches Bauelement enthaltend das Polymerkomposit |
JP2012056251A (ja) * | 2010-09-10 | 2012-03-22 | Yokohama Rubber Co Ltd:The | 金属層の腐食防止方法、耐硫化性を有する、積層体、半導体発光装置およびシリコーン樹脂組成物 |
WO2012137552A1 (ja) * | 2011-04-05 | 2012-10-11 | 三井金属鉱業株式会社 | 発光デバイス |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3065194A (en) * | 1959-07-16 | 1962-11-20 | Wacker Chemie Gmbh | Method of preparing silicone rubber compositions |
US6469215B1 (en) * | 2000-05-17 | 2002-10-22 | Degussa Ag | Process for the production of an intermediate mixture of β-isophorone epoxide and its isomer 4-hydroxyisophorone (HIP) |
JP2009120437A (ja) | 2007-11-14 | 2009-06-04 | Niigata Univ | シロキサンをグラフト化したシリカ及び高透明シリコーン組成物並びに該組成物で封止した発光半導体装置 |
CN102639590B (zh) * | 2009-11-30 | 2015-06-24 | 日本化药株式会社 | 固化性树脂组合物及其固化物 |
CN102190890B (zh) * | 2010-01-26 | 2015-06-17 | 横滨橡胶株式会社 | 有机硅树脂组合物及其使用方法、有机硅树脂、含有其的结构体、和光半导体元件密封体 |
CN102569593A (zh) * | 2010-12-22 | 2012-07-11 | 展晶科技(深圳)有限公司 | 发光二极管 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2011178983A (ja) * | 2010-01-26 | 2011-09-15 | Yokohama Rubber Co Ltd:The | シリコーン樹脂組成物およびその使用方法、シリコーン樹脂、シリコーン樹脂含有構造体、ならびに光半導体素子封止体 |
WO2011132419A1 (ja) * | 2010-04-22 | 2011-10-27 | 日本化薬株式会社 | 銀変色防止剤、銀変色防止樹脂組成物、銀変色防止方法、及びこれを使用した発光ダイオード |
DE102010035110A1 (de) * | 2010-08-23 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Polymerkomposit, Verwendung des Polymerkomposits und optoelektronisches Bauelement enthaltend das Polymerkomposit |
JP2012056251A (ja) * | 2010-09-10 | 2012-03-22 | Yokohama Rubber Co Ltd:The | 金属層の腐食防止方法、耐硫化性を有する、積層体、半導体発光装置およびシリコーン樹脂組成物 |
WO2012137552A1 (ja) * | 2011-04-05 | 2012-10-11 | 三井金属鉱業株式会社 | 発光デバイス |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104871040B (zh) | 2020-02-21 |
CN104871040A (zh) | 2015-08-26 |
EP2936218A1 (en) | 2015-10-28 |
WO2014097120A1 (en) | 2014-06-26 |
US20150340564A1 (en) | 2015-11-26 |
JP6422882B2 (ja) | 2018-11-14 |
EP2936218B1 (en) | 2017-02-22 |
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