CN102569593A - 发光二极管 - Google Patents

发光二极管 Download PDF

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CN102569593A
CN102569593A CN2010105956808A CN201010595680A CN102569593A CN 102569593 A CN102569593 A CN 102569593A CN 2010105956808 A CN2010105956808 A CN 2010105956808A CN 201010595680 A CN201010595680 A CN 201010595680A CN 102569593 A CN102569593 A CN 102569593A
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light
emitting diode
phosphor
backlight unit
green
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方荣熙
许时渊
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to US13/221,861 priority patent/US20120161179A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Abstract

本发明涉及一种发光二极管,包括基座、位于基座上的发光二极管芯片、及覆盖该发光二极管芯片的透光封装体,该发光二极管芯片的出光路径上设置有一个荧光粉层,该荧光粉层包括多个红色荧光粉区域、多个绿色荧光粉区域及多个蓝色荧光粉区域,该多个红色荧光粉区域、绿色荧光粉区域及蓝色荧光粉区域分别沿相互垂直的第一、第二方向交替排列并呈矩阵形,且该第一方向上的任意两个同色荧光粉区域互不相邻,该第二方向上的任意两个同色荧光粉区域互不相邻。该种发光二极管具有演色性高且配光简单的优点。

Description

发光二极管
技术领域
本发明涉及一种发光二极管,尤其涉及一种白光发光二极管。
背景技术
目前市场上的部分白光发光二极管将发蓝光的发光二极管芯片与黄光荧光粉相互配合使用,利用黄光荧光粉受蓝光激发而产生的黄光与未被黄光荧光粉吸收的蓝光相混合得到白光。然而,该种方式得到的白光演色性不足,不能满足特定的出光要求。
为提高发光二极管的演色性,还有部分白光发光二极管将红光发光二极管芯片、绿光发光二极管芯片以及蓝光发光二极管芯片设置在同一封装结构中,利用红、绿、蓝三色光混成白光。该种包含三色发光二极管芯片的发光二极管具有较好的演色性,然而,该种发光二极管采用红、绿、蓝三色光混成白光时,需要分别控制各色发光二极管芯片的工作电流,从而调节各色光的分配比例来混成白光,导致该种发光二极管的配色较为复杂。
发明内容
有鉴于此,有必要提供一种演色性高且配光简单的发光二极管。
一种发光二极管,包括基座、位于基座上的发光二极管芯片、及覆盖该发光二极管芯片的透光封装体,该发光二极管芯片的出光路径上设置有一个荧光粉层,该荧光粉层包括多个红色荧光粉区域、多个绿色荧光粉区域及多个蓝色荧光粉区域,该多个红色荧光粉区域、绿色荧光粉区域及蓝色荧光粉区域分别沿相互垂直的第一、第二方向交替排列并呈矩阵形,且该第一方向上的任意两个同色荧光粉区域互不相邻,该第二方向上的任意两个同色荧光粉区域互不相邻。
所述发光二极管的发光二极管芯片发出的光分别激发红、绿、蓝三色荧光粉产生红光、绿光、蓝光进而混成白光,使得该种发光二极管不仅演色性好,而且混光简单并无需额外的电流控制达成配色目的。
附图说明
图1是本发明实施例提供的发光二极管的结构示意图。
图2是图1所示发光二极管的荧光粉区域排布结构示意图。
图3是本发明实施例提供的另一种发光二极管结构示意图。
图4是本发明实施例提供的又一种荧光粉区域排布结构示意图。
主要元件符号说明
发光二极管10
基座11
发光二极管芯片12
封装体13
荧光粉层14
基底110
反射杯112
第一电极114
第二电极116
接触段1140,1160
接线段1142,1162
连接段1144,1164
具体实施方式
下面将结合附图对本发明实施例作进一步的详细说明。
请参阅图1,本发明实施例的发光二极管10包括基座11、发光二极管芯片12、封装体13、荧光粉层14。
该基座11包括基底110、设置在基底110上的反射杯112以及位于基底110两侧的第一电极114、第二电极116。
该基底110及反射杯112可以由LCP (Liquid CrystalPolymer,即液晶高分子)材料一体制成,也可以为不同材料分开制造,比如反射杯112由LCP材料制成,而基底110为硅基板、塑料基板或陶瓷基板。
该第一电极114及第二电极116由金属材料制成,并弯折成U型,且相对设置在基座11的两侧。该第一电极114与第二电极116相互隔开以避免短路。该第一电极114及第二电极116均包括位于基底110底部的接触段1140、1160,位于基底110顶面且暴露于反射杯112底部的接线段1142、1162,以及连接接触段1140、1160及接线段1142、1162的连接段1144、1164。该接触段1140、1160用于与外部的电路(图未示)连接以将电能经由连接段1144、1164传导至接线段1142、1162。该接线段1142、1162与发光二极管芯片12电连接,以供给发光二极管芯片12发光所需的电能。本实施例中,该接线段1142、1162平行于接触段1140、1160且垂直于连接段1144、1164。
该发光二极管芯片12容置于所述基座11的反射杯112内,并固定于第一电极114的接线段1142的表面上。本实施例中,该发光二极管芯片12为紫外光发光二极管芯片。该发光二极管芯片12的两个电极通过金属线15分别连接至第一电极114及第二电极116的接线段1142、1162以实现电性连接。当然,发光二极管芯片12也可采用覆晶封装(flip-chip)的方式直接固定于第一电极114及第二电极116的接线段1142、1162表面,而无需使用金属线15。
该封装体13可由聚碳酸酯或者聚甲基丙烯酸甲酯等透明材料所制成。该封装体13填充在反射杯112内并覆盖发光二极管芯片12以及基底110上未被第一电极114、第二电极116覆盖的部分。
所述荧光粉层14设置在该封装体13的远离该发光二极管芯片12的表面上。该荧光粉层14包括多个红光荧光粉区域140、多个绿光荧光粉区域142以及多个蓝光荧光粉区域144。该多个红色荧光粉区域140、绿色荧光粉区域142及蓝色荧光粉区域144呈矩阵形排列。
本实施例中,所述红色荧光粉区域140、绿色荧光粉区域142及蓝色荧光粉区域144以马赛克(mosaic)形图案排列成矩阵。如图2所示,红色荧光粉区域140、绿色荧光粉区域142及蓝色荧光粉区域144分别沿X、Y方向交替排列,该X方向与Y方向相互垂直。X方向上各行的荧光粉区域以“红蓝绿红蓝绿...”依次交替的次序排列,Y方向上各列的荧光粉区域以“红绿蓝红绿蓝...”依次交替的次序排列。
具体的:
自左向右,X方向上第一行的首个荧光粉区域为红色荧光粉区域140且排列次序为“红蓝绿红蓝绿(RBGRBG)”,X方向上第二行的首个荧光粉区域为绿色荧光粉区域142且排列次序为“绿红蓝绿红蓝(GRBGRB)”,X方向上第三行的首个荧光粉区域为蓝色荧光粉区域144且排列次序为“蓝绿红蓝绿红(BGRBGR)”,X方向上第四行的首个荧光粉区域为红色荧光粉区域140且排列次序为“红蓝绿红蓝绿(RBGRBG)”,X方向上第五行的首个荧光粉区域为绿色荧光粉区域142且排列次序为“绿红蓝绿红蓝(GRBGRB)”,X方向上第六行的首个荧光粉区域为蓝色荧光粉区域144且排列次序为“蓝绿红蓝绿红(BGRBGR)”;
从上至下,Y方向上第一列的首个荧光粉区域为红色荧光粉区域140且排列次序为“红绿蓝红绿蓝(RGBRGB)”,Y方向上第二列的首个荧光粉区域为蓝色荧光粉区域144且排列次序为“蓝红绿蓝红绿(BRGBRG)”,Y方向上第三列的首个荧光粉区域为绿色荧光粉区域142且排列次序为“绿蓝红绿蓝红(GBRGBR)”,Y方向上第四列的首个荧光粉区域为红色荧光粉区域140且排列次序为“红绿蓝红绿蓝(RGBRGB)”,Y方向上第五列的首个荧光粉区域为蓝色荧光粉区域144且排列次序为“蓝红绿蓝红绿(BRGBRG)”,Y方向上第六列的首个荧光粉区域为绿色荧光粉区域142且排列次序为“绿蓝红绿蓝红(GBRGBR)”。
以此排列方式,当X方向上的荧光粉区域排列大于3行时,Y方向上的荧光粉区域排列大于3列时:
X方向上第N(N=3n+1,n为自然数)行的首个荧光粉区域为红色荧光粉区域140且以“红蓝绿红蓝绿...”的次序排列,X方向上第N+1行的首个荧光粉区域为绿色荧光粉区域142且以“蓝绿红蓝绿红...”的次序排列,X方向上第N+2行的首个荧光粉区域为蓝色荧光粉区域144且以“绿红蓝绿红蓝...”的次序排列;
Y方向上第N(N=3n+1,n为自然数)行的首个荧光粉区域为红色荧光粉区域140且以“红绿蓝红绿蓝...”的次序排列,Y方向上第N+1行的首个荧光粉区域为蓝色荧光粉区域144且以“蓝红绿蓝红绿...”的次序排列,Y方向上第N+2行的首个荧光粉区域为绿色荧光粉区域142且以“绿蓝红绿蓝红...”的次序排列。
如此方式设置的荧光粉层14,其X方向上的任意两个同色荧光粉区域互不相邻,且Y方向上的任意两个同色荧光粉区域也互不相邻,从而使得各色荧光粉区域均匀分布,以达成更均匀的混光效果。
需要说明的是,所述荧光粉层14的设置位置并不局限于封装体13的远离该发光二极管芯片12的表面上,只要能够保证荧光粉层14位于发光二极管芯片12的出光路径上以实现转换波长的目的即可。例如图3所示,该荧光粉层14还可嵌设在封装体13的内部,从而在保证实现光波长转换功能的前提下,荧光粉层14还可以受到封装体13的保护而避免外界环境的侵蚀。
此外,该红色荧光粉区域140、绿色荧光粉区域142及蓝色荧光粉区域144的排列方式也并不局限于前述实施例提供的方式,只要保证能够达成各色荧光粉区域均匀分布以实现均匀混光的效果即可。例如图4所示,各色荧光粉区域的排列也可以依照X、Y方向上奇数行、列均以红绿交替的方式排列,X、Y方向上偶数行、列均以绿蓝交替的方式排列。
当然,荧光粉层14的设置位置还可以在发光二极管芯片12的出光路径上适当变更,红、绿、蓝色荧光粉区域的分布也还可以有其他多种变形方式,在此不再一一赘述。
可以理解的是,本领域技术人员还可于本发明精神内做其它变化,只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。

Claims (6)

1.一种发光二极管,包括基座、位于基座上的发光二极管芯片、及覆盖该发光二极管芯片的透光封装体,其特征在于:该发光二极管芯片的出光路径上设置有一个荧光粉层,该荧光粉层包括多个红色荧光粉区域、多个绿色荧光粉区域及多个蓝色荧光粉区域,该多个红色荧光粉区域、绿色荧光粉区域及蓝色荧光粉区域分别沿相互垂直的第一、第二方向交替排列并呈矩阵形,且该第一方向上的任意两个同色荧光粉区域互不相邻,该第二方向上的任意两个同色荧光粉区域互不相邻。
2.如权利要求1所述的发光二极管,其特征在于,该基座包括基底及形成于该基底上的反射杯,所述发光二极管芯片设置于基底上且位于反射杯内。
3.如权利要求2所述的发光二极管,其特征在于,该封装体填充在反射杯内,该封装体覆盖该发光二极管芯片以及基底上未被第一电极、第二电极覆盖的部分。
4.如权利要求1所述的发光二极管,其特征在于,该发光二极管芯片为紫外光发光二极管芯片。
5.如权利要求1所述的发光二极管,其特征在于,该荧光粉层嵌设在封装体内部。
6.如权利要求1所述的发光二极管,其特征在于,该荧光粉层设置在封装体的远离发光二极管芯片的表面上。
CN2010105956808A 2010-12-22 2010-12-22 发光二极管 Pending CN102569593A (zh)

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US13/221,861 US20120161179A1 (en) 2010-12-22 2011-08-30 Light emitting diode package

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104871040A (zh) * 2012-12-20 2015-08-26 皇家飞利浦有限公司 保护性组合物

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012113003A1 (de) * 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006117710A1 (en) * 2005-04-29 2006-11-09 Koninklijke Philips Electronics N.V. Light source with glass housing
CN201004467Y (zh) * 2006-11-09 2008-01-09 明达光电(厦门)有限公司 一种白光发光装置
CN100370629C (zh) * 2003-04-30 2008-02-20 三星电机株式会社 具有荧光多层结构的发光二极管装置
CN101268554A (zh) * 2005-09-19 2008-09-17 皇家飞利浦电子股份有限公司 可变色发光器件及其控制方法
CN100468791C (zh) * 2002-08-30 2009-03-11 吉尔科有限公司 具有改良效率的镀膜led
US20090152665A1 (en) * 2007-12-14 2009-06-18 Advanced Optoelectronic Technology Inc. Fabricating methods of photoelectric devices and package structures thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007061815A1 (en) * 2005-11-18 2007-05-31 Cree, Inc. Solid state lighting device
BRPI0924492A2 (pt) * 2009-03-19 2016-02-16 Sharp Kk painel de exibição e dispositivo de exibição
US8585253B2 (en) * 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8502758B2 (en) * 2009-12-10 2013-08-06 Young Electric Sign Company Apparatus and method for mapping virtual pixels to physical light elements of a display

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100468791C (zh) * 2002-08-30 2009-03-11 吉尔科有限公司 具有改良效率的镀膜led
CN100370629C (zh) * 2003-04-30 2008-02-20 三星电机株式会社 具有荧光多层结构的发光二极管装置
WO2006117710A1 (en) * 2005-04-29 2006-11-09 Koninklijke Philips Electronics N.V. Light source with glass housing
CN101268554A (zh) * 2005-09-19 2008-09-17 皇家飞利浦电子股份有限公司 可变色发光器件及其控制方法
CN201004467Y (zh) * 2006-11-09 2008-01-09 明达光电(厦门)有限公司 一种白光发光装置
US20090152665A1 (en) * 2007-12-14 2009-06-18 Advanced Optoelectronic Technology Inc. Fabricating methods of photoelectric devices and package structures thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104871040A (zh) * 2012-12-20 2015-08-26 皇家飞利浦有限公司 保护性组合物
CN104871040B (zh) * 2012-12-20 2020-02-21 飞利浦照明控股有限公司 保护性组合物

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