JP2016502595A5 - - Google Patents

Download PDF

Info

Publication number
JP2016502595A5
JP2016502595A5 JP2015539665A JP2015539665A JP2016502595A5 JP 2016502595 A5 JP2016502595 A5 JP 2016502595A5 JP 2015539665 A JP2015539665 A JP 2015539665A JP 2015539665 A JP2015539665 A JP 2015539665A JP 2016502595 A5 JP2016502595 A5 JP 2016502595A5
Authority
JP
Japan
Prior art keywords
gas
gas injection
extraction
conduit
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015539665A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016502595A (ja
JP6514106B2 (ja
Filing date
Publication date
Priority claimed from US14/052,049 external-priority patent/US10174422B2/en
Application filed filed Critical
Publication of JP2016502595A publication Critical patent/JP2016502595A/ja
Publication of JP2016502595A5 publication Critical patent/JP2016502595A5/ja
Application granted granted Critical
Publication of JP6514106B2 publication Critical patent/JP6514106B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015539665A 2012-10-25 2013-10-17 選択的なガス注入及び抽出のための装置 Active JP6514106B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261718413P 2012-10-25 2012-10-25
US61/718,413 2012-10-25
US14/052,049 US10174422B2 (en) 2012-10-25 2013-10-11 Apparatus for selective gas injection and extraction
US14/052,049 2013-10-11
PCT/US2013/065354 WO2014066123A1 (en) 2012-10-25 2013-10-17 Apparatus for selective gas injection and extraction

Publications (3)

Publication Number Publication Date
JP2016502595A JP2016502595A (ja) 2016-01-28
JP2016502595A5 true JP2016502595A5 (enExample) 2016-12-08
JP6514106B2 JP6514106B2 (ja) 2019-05-15

Family

ID=50545120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015539665A Active JP6514106B2 (ja) 2012-10-25 2013-10-17 選択的なガス注入及び抽出のための装置

Country Status (6)

Country Link
US (2) US10174422B2 (enExample)
JP (1) JP6514106B2 (enExample)
KR (2) KR102208882B1 (enExample)
CN (1) CN104718603B (enExample)
TW (1) TWI596230B (enExample)
WO (1) WO2014066123A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10954597B2 (en) * 2015-03-17 2021-03-23 Asm Ip Holding B.V. Atomic layer deposition apparatus
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
AT518081B1 (de) * 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
ES2997242T3 (en) * 2020-12-10 2025-02-14 Bobst Mex Sa Positioning device and positioning assembly for holding a flat flexible part, and sheet material processing machine
CN116949566A (zh) * 2022-04-15 2023-10-27 上海华力集成电路制造有限公司 一种提高外延生长均匀性的反应装置
GB2624388B (en) * 2022-11-15 2025-02-05 Edwards Ltd Vacuum chamber and vacuum system
CN117802480A (zh) * 2024-01-23 2024-04-02 哈尔滨工业大学 用于半球形曲面内表面均匀镀膜的原子层沉积装置

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3158264B2 (ja) 1993-08-11 2001-04-23 東京エレクトロン株式会社 ガス処理装置
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
JP2978857B2 (ja) 1997-10-03 1999-11-15 九州日本電気株式会社 プラズマエッチング装置
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2000114251A (ja) * 1998-10-09 2000-04-21 C Bui Res:Kk 常圧cvd装置用ガス散布機構部
US6230651B1 (en) 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
JP2000262351A (ja) 1999-03-17 2000-09-26 Kasai Kogyo Co Ltd 自動車用シートのポケット構造
JP3212581B2 (ja) 1999-12-08 2001-09-25 株式会社筒井プラスチック 含浸液体の化学結合により補強された粉体造形品の製造方法
US6461980B1 (en) 2000-01-28 2002-10-08 Applied Materials, Inc. Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber
KR100470986B1 (ko) * 2000-03-14 2005-03-07 주성엔지니어링(주) 반도체소자 제조용 고진공 장치 및 이를 이용한 에피택셜막 형성방법
JP2001262351A (ja) * 2000-03-23 2001-09-26 Ebara Corp シャワーヘッド及び成膜装置
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
KR100941960B1 (ko) * 2003-06-03 2010-02-11 주성엔지니어링(주) 화학기상증착 장치의 샤워헤드
JP5519105B2 (ja) * 2004-08-02 2014-06-11 ビーコ・インストゥルメンツ・インコーポレイテッド 化学気相成長の方法及び化学気相成長リアクタ用のガス供給システム
KR20070058797A (ko) 2005-12-05 2007-06-11 삼성전자주식회사 반도체 웨이퍼의 오염 분석을 위한 전처리 방법 및 이를이용한 장치
EP1992007A4 (en) 2006-03-03 2010-05-05 Prasad Gadgil APPARATUS AND METHOD FOR THIN FILM CHEMICAL PROCESSING BY MULTIPLE ATOMIC LAYER OVER AN EXTENDED AREA
JP4741430B2 (ja) 2006-06-30 2011-08-03 京セラ株式会社 成膜装置および成膜方法
JP4826483B2 (ja) 2007-01-19 2011-11-30 東京エレクトロン株式会社 プラズマ処理装置
US8057602B2 (en) 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US8057601B2 (en) 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
KR100960958B1 (ko) 2007-12-24 2010-06-03 주식회사 케이씨텍 박막 증착 장치 및 증착 방법
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Cvd용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
KR100982842B1 (ko) * 2008-04-25 2010-09-16 주식회사 케이씨텍 원자층 증착 장치
US8111978B2 (en) 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
US20100037820A1 (en) * 2008-08-13 2010-02-18 Synos Technology, Inc. Vapor Deposition Reactor
KR101037189B1 (ko) * 2008-11-11 2011-05-26 세메스 주식회사 플라즈마 화학기상증착 장치용 대면적 샤워헤드
KR101027954B1 (ko) * 2008-12-22 2011-04-12 주식회사 케이씨텍 샤워헤드 및 이를 구비하는 원자층 증착장치
US8298372B2 (en) 2009-04-20 2012-10-30 Applied Materials, Inc. Quartz window having gas feed and processing equipment incorporating same
JP5812606B2 (ja) * 2010-02-26 2015-11-17 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US9499905B2 (en) 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US20140027060A1 (en) 2012-07-27 2014-01-30 Applied Matericals, Inc Gas distribution apparatus for substrate processing systems
KR20150038406A (ko) 2012-07-27 2015-04-08 어플라이드 머티어리얼스, 인코포레이티드 공정 가스를 기판에 전달하기 위한 방법 및 장치

Similar Documents

Publication Publication Date Title
JP2016502595A5 (enExample)
TWD175119S (zh) 反應管
GB2538167A (en) Improved plasma enhanced ALD system
WO2012118887A3 (en) Apparatus and process for atomic layer deposition
KR102156795B1 (ko) 증착 장치
JP2016540124A5 (enExample)
PH12018500293A1 (en) A method of producing a two-dimensional material
JP2012146939A5 (enExample)
JP2015183224A5 (enExample)
WO2010101756A3 (en) Web substrate deposition system
TW200644084A (en) A plasma enhanced atomic layrer deposition system
TWD180125S (zh) 反應管之部分
WO2013036667A3 (en) Flowable silicon-carbon-nitrogen layers for semiconductor processing
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
WO2011029096A3 (en) Plasma enhanced chemical vapor deposition apparatus
JP2011023714A5 (ja) プラズマ成膜装置
CN103194737B (zh) 一种用于原子层沉积设备的气体分配器
WO2017212077A3 (de) Verfahren zur herstellung eines substrates mit einer bordotierten oberfläche
JP2017125837A5 (enExample)
GB2592513B (en) Method for efficiently eliminating graphene wrinkles formed by chemical vapor deposition
JP2015510260A5 (enExample)
JP2012182447A5 (ja) 半導体膜の作製方法
JP2011199271A5 (ja) 成膜装置
JP2015079945A5 (enExample)
JP2016095504A5 (enExample)