JP2016201703A - Cr発振回路 - Google Patents
Cr発振回路 Download PDFInfo
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- JP2016201703A JP2016201703A JP2015081258A JP2015081258A JP2016201703A JP 2016201703 A JP2016201703 A JP 2016201703A JP 2015081258 A JP2015081258 A JP 2015081258A JP 2015081258 A JP2015081258 A JP 2015081258A JP 2016201703 A JP2016201703 A JP 2016201703A
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- 230000010355 oscillation Effects 0.000 title claims abstract description 91
- 230000005669 field effect Effects 0.000 claims abstract description 257
- 230000005540 biological transmission Effects 0.000 claims abstract description 78
- 239000003990 capacitor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 49
- 230000001934 delay Effects 0.000 claims description 3
- 101150110971 CIN7 gene Proteins 0.000 description 26
- 101100508840 Daucus carota INV3 gene Proteins 0.000 description 26
- 101150110298 INV1 gene Proteins 0.000 description 26
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 26
- 230000007423 decrease Effects 0.000 description 16
- 101100286980 Daucus carota INV2 gene Proteins 0.000 description 13
- 101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 13
- 238000010586 diagram Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 102100037224 Noncompact myelin-associated protein Human genes 0.000 description 10
- 101710184695 Noncompact myelin-associated protein Proteins 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/10—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being vacuum tube
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/02—Automatic control of frequency or phase; Synchronisation using a frequency discriminator comprising a passive frequency-determining element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/089—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
- H03L7/0891—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/097—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal using a comparator for comparing the voltages obtained from two frequency to voltage converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
以上が定電圧発生回路30の構成である。
以下、同様な動作が繰り返され、CR発振回路が発振する。
以上が図7および図8に示す実施形態の構成である。
Claims (10)
- 信号を巡回させるループを構成する少なくとも1個のスイッチングゲートと、
前記ループ内に介挿され、前記信号を遅延させる回路であって、キャパシターと、複数の抵抗素子と、前記複数の抵抗素子の中の任意の抵抗素子を前記キャパシターの充放電経路として選択する選択部とを有するCR時定数回路と、
前記選択部のON/OFFを制御するとともに、前記選択部をONさせる場合に当該選択部の抵抗値の温度特性が一定になるように前記選択部を制御する制御手段と
を具備することを特徴とするCR発振回路。 - 前記選択部は、トランスミッションゲートからなり、
前記制御手段は、前記トランスミッションゲートのON/OFFを制御するゲート電圧を出力し、前記トランスミッションゲートをONさせるゲート電圧として、電界効果トラジスターの閾値電圧と連動する定電圧を出力するゲート電圧発生手段を有することを特徴とする請求項1に記載のCR発振回路。 - 前記CR時定数回路におけるトランスミッションゲートを前記スイッチングゲートの出力ノード側に配置し、前記抵抗素子を前記キャパシター側に配置したことを特徴とする請求項2に記載のCR発振回路。
- 前記トランスミッションゲートは、Pチャネル電界効果トランジスターとNチャネル電界効果トランジスターとからなり、前記ゲート電圧発生手段が出力する定電圧を当該Pチャネル電界効果トランジスターのサブストレート、または当該Nチャネル電界効果トランジスターのサブストレートに供給するようにしたことを特徴とする請求項2または3に記載のCR発振回路。
- 前記スイッチングゲートは、Pチャネル電界効果トランジスターとNチャネル電界効果トランジスターとからなり、前記ゲート電圧発生手段が出力する定電圧を前記スイッチングゲートのPチャネル電界効果トランジスターのソースまたはNチャネル電界効果トランジスターのソースに供給するようにしたことを特徴とする請求項2または3に記載のCR発振回路。
- 前記スイッチングゲートは、Pチャネル電界効果トランジスターとNチャネル電界効果トランジスターとからなり、前記ゲート電圧発生手段が出力する定電圧を前記スイッチングゲートのPチャネル電界効果トランジスターのソースおよびサブストレート、または前記スイッチングゲートのNチャネル電界効果トランジスターのソースおよびサブストレートに供給するようにしたことを特徴とする請求項2または3に記載のCR発振回路。
- 前記制御手段は、
前記トランスミッションゲートのON/OFFを指定する選択信号を出力する抵抗制御回路をさらに備え、
前記ゲート電圧発生手段は、
前記定電圧を出力する定電圧発生回路と、
前記定電圧が供給され、前記選択信号のレベルをシフトして前記ゲート電圧を出力するレベルシフターとを備える、
ことを特徴とする請求項2または3に記載のCR発振回路。 - 前記レベルシフターは、インバーターを含むことを特徴とする請求項7に記載のCR発振回路。
- 前記インバーターは、Pチャネル電界効果トランジスターとNチャネル電界効果トランジスターとからなり、前記定電圧発生回路が出力する定電圧を前記インバーターのPチャネル電界効果トランジスターのソースおよびサブストレート、または前記スイッチングゲートのNチャネル電界効果トランジスターのソースおよびサブストレートに供給するようにしたことを特徴とする請求項8に記載のCR発振回路。
- 前記ゲート電圧発生手段は、閾値電圧に差のある2個の電界効果トランジスターからなる差動トランジスターペアを含み、前記閾値電圧の差に起因したオフセット電圧を前記定電圧として出力する定電圧発生回路を含むことを特徴とする請求項2〜9のいずれか1の請求項に記載のCR発振回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015081258A JP6550878B2 (ja) | 2015-04-10 | 2015-04-10 | Cr発振回路 |
US15/059,977 US9716501B2 (en) | 2015-04-10 | 2016-03-03 | CR oscillation circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2015081258A JP6550878B2 (ja) | 2015-04-10 | 2015-04-10 | Cr発振回路 |
Publications (3)
Publication Number | Publication Date |
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JP2016201703A true JP2016201703A (ja) | 2016-12-01 |
JP2016201703A5 JP2016201703A5 (ja) | 2018-04-26 |
JP6550878B2 JP6550878B2 (ja) | 2019-07-31 |
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JP2015081258A Active JP6550878B2 (ja) | 2015-04-10 | 2015-04-10 | Cr発振回路 |
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US (1) | US9716501B2 (ja) |
JP (1) | JP6550878B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020105182A1 (ja) * | 2018-11-22 | 2020-05-28 | 株式会社ソシオネクスト | 電圧制御発振器およびそれを用いたpll回路 |
CN112349320A (zh) * | 2019-08-06 | 2021-02-09 | 长鑫存储技术有限公司 | 字线驱动电路及存储单元 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102866A (ja) * | 1999-09-30 | 2001-04-13 | Denso Corp | Cr発振回路 |
JP2002033644A (ja) * | 2000-05-23 | 2002-01-31 | Samsung Electronics Co Ltd | マイクロパワーrc発振器 |
JP2005176363A (ja) * | 2003-12-08 | 2005-06-30 | Hynix Semiconductor Inc | 可変駆動電圧により動作するオシレータ |
US20110175684A1 (en) * | 2010-01-19 | 2011-07-21 | Elite Semiconductor Memory Technology Inc. | Temperature-compensated ring oscillator |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104639A (ja) | 1992-09-17 | 1994-04-15 | Seiko Instr Inc | Cr発振回路 |
JP2005167927A (ja) | 2003-12-05 | 2005-06-23 | Seiko Instruments Inc | Cr発振回路 |
JP4985035B2 (ja) | 2007-03-30 | 2012-07-25 | 富士通セミコンダクター株式会社 | 発振回路 |
JP4973579B2 (ja) | 2008-03-31 | 2012-07-11 | 富士通セミコンダクター株式会社 | Cr発振回路 |
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2015
- 2015-04-10 JP JP2015081258A patent/JP6550878B2/ja active Active
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2016
- 2016-03-03 US US15/059,977 patent/US9716501B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102866A (ja) * | 1999-09-30 | 2001-04-13 | Denso Corp | Cr発振回路 |
JP2002033644A (ja) * | 2000-05-23 | 2002-01-31 | Samsung Electronics Co Ltd | マイクロパワーrc発振器 |
JP2005176363A (ja) * | 2003-12-08 | 2005-06-30 | Hynix Semiconductor Inc | 可変駆動電圧により動作するオシレータ |
US20110175684A1 (en) * | 2010-01-19 | 2011-07-21 | Elite Semiconductor Memory Technology Inc. | Temperature-compensated ring oscillator |
Also Published As
Publication number | Publication date |
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JP6550878B2 (ja) | 2019-07-31 |
US20160301398A1 (en) | 2016-10-13 |
US9716501B2 (en) | 2017-07-25 |
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