JP2016187353A - 超高速の核酸配列決定のための電界効果トランジスタ装置 - Google Patents
超高速の核酸配列決定のための電界効果トランジスタ装置 Download PDFInfo
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Abstract
【解決手段】
電界効果トランジスタ(FET)核酸配列決定装置(102)は、ソース(106)およびドレイン(104)領域ならびにゲート酸化物(136)を含む。ソース/ドレイン金属接点(123、142)に接続されたリード線(116)を介して電圧源(112)によってソースおよびドレインに電位が印加される。核酸鎖(111)がゲート電極領域となる開口部(118)を通過すると、核酸塩基(アデニン、チミン、グアニン、またはシトシン)を表す電荷が、チャネル(119)を介してソース(106)およびドレイン(104)間を流れる電流をその間の電界を変えることによって変え、電流計(114)によって測定される。
【選択図】図1
Description
第1導電型のシリコン層の第1の表面に形成された第2の導電型の第1ドープ領域と、前記第1導電型のシリコン層の前記第1の表面とは反対側の第2の表面に形成された第2の導電型の第2ドープ領域と、前記第1ドープ領域の前記第1表面から前記第2ドープ領域の前記第2の表面を貫通する開口部と、前記開口部の壁面に沿って垂直方向に延伸するチャネルと、を有し、前記開口部が、1〜10nmの範囲の直径を有しており、前記第1ドープ領域、前記第2ドープ領域及び前記チャネルが、絶縁体により前記開口部から分離されている半導体装置を提供するステップと、
前記核酸鎖が前記開口を通過するステップと、
前記ソース領域及び前記ドレイン領域間において前記検出領域を通過する電流を検出するステップと、
を備える方法を提供する。
Claims (14)
- 第1導電型のシリコン層の第1の表面に形成された第2の導電型の第1ドープ領域と、前記第1導電型のシリコン層の前記第1の表面とは反対側の第2の表面に形成された第2の導電型の第2ドープ領域と、前記第1ドープ領域の前記第1表面から前記第2ドープ領域の前記第2の表面を貫通する開口部と、前記開口部の壁面に沿って垂直方向に延伸するチャネルと、を有し、前記開口部は、1〜10nmの範囲の直径を有しており、前記第1ドープ領域、前記第2ドープ領域及び前記チャネルは、絶縁体により前記開口部から分離されている、半導体装置を備える、システム。
- 前記開口部は、1の前記核酸鎖のみが一度に通過することができる寸法である、請求項1に記載のシステム。
- 前記開口部は漏斗形状をなしている、請求項1に記載のシステム。
- 前記開口部はV字形溝の形状を成している、請求項1に記載のシステム。
- 前記V字形溝は、1〜2nmのサイズを有している、請求項4に記載のシステム。
- 前記絶縁体は二酸化シリコンを含む、請求項1に記載のシステム。
- 前記半導体装置の第1側において媒体内に位置する第1電極と、
前記半導体装置の第2側において媒体内に位置する第2電極と、をさらに備える、
請求項1に記載のシステム。 - 核酸鎖を検出する方法であって、
第1導電型のシリコン層の第1の表面に形成された第2の導電型の第1ドープ領域と、前記第1導電型のシリコン層の前記第1の表面とは反対側の第2の表面に形成された第2の導電型の第2ドープ領域と、前記第1ドープ領域の前記第1表面から前記第2ドープ領域の前記第2の表面を貫通する開口部と、前記開口部の壁面に沿って垂直方向に延伸するチャネルと、を有し、前記開口部が、1〜10nmの範囲の直径を有しており、前記第1ドープ領域、前記第2ドープ領域及び前記チャネルが、絶縁体により前記開口部から分離されている半導体装置を提供するステップと、
前記核酸鎖が前記開口を通過するステップと、
前記ソース領域及び前記ドレイン領域間において前記検出領域を通過する電流を検出するステップと、
を備える方法。 - 前記開口部は、1の前記核酸鎖のみが一度に通過することができる寸法である、請求項8に記載の方法。
- 前記開口部は漏斗形状をなしている、請求項8に記載の方法。
- 前記開口部はV字形溝の形状を成している、請求項8に記載の方法。
- 前記V字形溝は、1〜2nmのサイズを有している、請求項11に記載の方法。
- 前記絶縁体は二酸化シリコンを含む、請求項8に記載の方法。
- 前記核酸鎖は、前記半導体装置の互いに反対側において媒体内に位置する第1電極及び第2電極間に形成される電界によって前記開口部を通過する、前記請求項8に記載の方法。
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US09/653,543 US6413792B1 (en) | 2000-04-24 | 2000-08-31 | Ultra-fast nucleic acid sequencing device and a method for making and using the same |
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-
2000
- 2000-08-31 US US09/653,543 patent/US6413792B1/en not_active Expired - Lifetime
-
2001
- 2001-04-24 EP EP10182494.4A patent/EP2278317B1/en not_active Expired - Lifetime
- 2001-04-24 AT AT01928786T patent/ATE489621T1/de not_active IP Right Cessation
- 2001-04-24 EP EP01928786A patent/EP1285261B1/en not_active Expired - Lifetime
- 2001-04-24 DE DE60143523T patent/DE60143523D1/de not_active Expired - Lifetime
- 2001-04-24 WO PCT/US2001/013104 patent/WO2001081908A1/en active Application Filing
- 2001-04-24 JP JP2001578944A patent/JP4758047B2/ja not_active Expired - Fee Related
- 2001-04-24 AU AU2001255604A patent/AU2001255604A1/en not_active Abandoned
-
2002
- 2002-05-13 US US10/143,568 patent/US20030003609A1/en not_active Abandoned
-
2011
- 2011-04-04 JP JP2011082517A patent/JP2011177180A/ja active Pending
-
2012
- 2012-09-10 JP JP2012198375A patent/JP2013013413A/ja active Pending
-
2014
- 2014-07-08 JP JP2014140320A patent/JP2014198052A/ja not_active Ceased
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2016
- 2016-07-15 JP JP2016140667A patent/JP2016187353A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
ATE489621T1 (de) | 2010-12-15 |
JP2003531592A (ja) | 2003-10-28 |
DE60143523D1 (de) | 2011-01-05 |
EP2278317A1 (en) | 2011-01-26 |
AU2001255604A1 (en) | 2001-11-07 |
JP2011177180A (ja) | 2011-09-15 |
US6413792B1 (en) | 2002-07-02 |
JP4758047B2 (ja) | 2011-08-24 |
JP2013013413A (ja) | 2013-01-24 |
EP1285261A4 (en) | 2007-01-31 |
EP1285261A1 (en) | 2003-02-26 |
WO2001081908A1 (en) | 2001-11-01 |
EP1285261B1 (en) | 2010-11-24 |
US20030003609A1 (en) | 2003-01-02 |
JP2014198052A (ja) | 2014-10-23 |
EP2278317B1 (en) | 2016-11-23 |
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