JP2016171141A5 - - Google Patents

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Publication number
JP2016171141A5
JP2016171141A5 JP2015048725A JP2015048725A JP2016171141A5 JP 2016171141 A5 JP2016171141 A5 JP 2016171141A5 JP 2015048725 A JP2015048725 A JP 2015048725A JP 2015048725 A JP2015048725 A JP 2015048725A JP 2016171141 A5 JP2016171141 A5 JP 2016171141A5
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JP
Japan
Prior art keywords
protective film
nitride
nitride semiconductor
substrate
nitride light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015048725A
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English (en)
Japanese (ja)
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JP2016171141A (ja
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Publication date
Application filed filed Critical
Priority to JP2015048725A priority Critical patent/JP2016171141A/ja
Priority claimed from JP2015048725A external-priority patent/JP2016171141A/ja
Publication of JP2016171141A publication Critical patent/JP2016171141A/ja
Publication of JP2016171141A5 publication Critical patent/JP2016171141A5/ja
Pending legal-status Critical Current

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JP2015048725A 2015-03-11 2015-03-11 窒化物発光素子および窒化物発光素子の製造方法 Pending JP2016171141A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015048725A JP2016171141A (ja) 2015-03-11 2015-03-11 窒化物発光素子および窒化物発光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015048725A JP2016171141A (ja) 2015-03-11 2015-03-11 窒化物発光素子および窒化物発光素子の製造方法

Publications (2)

Publication Number Publication Date
JP2016171141A JP2016171141A (ja) 2016-09-23
JP2016171141A5 true JP2016171141A5 (de) 2018-04-19

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ID=56983991

Family Applications (1)

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JP2015048725A Pending JP2016171141A (ja) 2015-03-11 2015-03-11 窒化物発光素子および窒化物発光素子の製造方法

Country Status (1)

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JP (1) JP2016171141A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7011163B2 (ja) 2018-02-22 2022-02-10 日亜化学工業株式会社 半導体素子の製造方法
JP7370437B1 (ja) 2022-10-05 2023-10-27 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7370438B1 (ja) 2022-10-05 2023-10-27 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3491903B2 (ja) * 1990-05-18 2004-02-03 セイコーエプソン株式会社 薄膜半導体装置の製造方法
EP0539804B1 (de) * 1991-10-15 1998-03-04 Canon Kabushiki Kaisha Trägermaterial für Flüssigkeitsaufzeichnungskopf, Herstellungsverfahren dafür, Flüssigkeitsaufzeichnungskopf und Flüssigkeitsaufzeichnungsvorrichtung
JPH0764030A (ja) * 1993-08-24 1995-03-10 Sumitomo Osaka Cement Co Ltd 導波路型光素子実装筺体構造物
JPH07304127A (ja) * 1994-05-13 1995-11-21 Toppan Printing Co Ltd ガスバリヤー性包装材料およびその製造方法
JPH098348A (ja) * 1995-06-16 1997-01-10 Stanley Electric Co Ltd 発光ダイオード及びその製造方法
JPH09116192A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 発光ダイオード
JPH10215003A (ja) * 1997-01-31 1998-08-11 Stanley Electric Co Ltd Ledチップ
JPH10303460A (ja) * 1997-02-27 1998-11-13 Toshiba Corp 半導体素子およびその製造方法
JP2001141950A (ja) * 1999-09-02 2001-05-25 Hitachi Cable Ltd 光導波路及びその製造方法
JP2001284644A (ja) * 2000-03-30 2001-10-12 Nichia Chem Ind Ltd 発光素子および発光素子パッケージ
TWI344709B (en) * 2007-06-14 2011-07-01 Epistar Corp Light emitting device
JP5379703B2 (ja) * 2010-01-26 2013-12-25 パナソニック株式会社 紫外半導体発光素子
JP5319628B2 (ja) * 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置

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