JP2016171141A5 - - Google Patents
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- JP2016171141A5 JP2016171141A5 JP2015048725A JP2015048725A JP2016171141A5 JP 2016171141 A5 JP2016171141 A5 JP 2016171141A5 JP 2015048725 A JP2015048725 A JP 2015048725A JP 2015048725 A JP2015048725 A JP 2015048725A JP 2016171141 A5 JP2016171141 A5 JP 2016171141A5
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- JP
- Japan
- Prior art keywords
- protective film
- nitride
- nitride semiconductor
- substrate
- nitride light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 22
- 230000001681 protective Effects 0.000 claims 22
- 239000004065 semiconductor Substances 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 12
- 229910017083 AlN Inorganic materials 0.000 claims 4
- 229910002601 GaN Inorganic materials 0.000 claims 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
Claims (11)
前記窒化物半導体基板上で、ＡｌおよびＧａの少なくとも一方を含む第１導電型の窒化物半導体層と、ＡｌおよびＧａを含む窒化物発光層と、ＡｌおよびＧａの少なくとも一方を含む第２導電型の窒化物半導体層とがこの順で積層されたメサ型の半導体積層構造部と、
前記メサ型の半導体積層構造部の表面および側面を覆う第１の保護膜と、
前記第１の保護膜を覆う第２の保護膜と、を備え、
前記第１の保護膜の屈折率は１．４６以下であり、
前記第２の保護膜の屈折率は１．４６を超える窒化物発光素子。 A nitride semiconductor substrate;
A first conductivity type nitride semiconductor layer containing at least one of Al and Ga, a nitride light emitting layer containing Al and Ga, and a second conductivity type containing at least one of Al and Ga on the nitride semiconductor substrate. A mesa-type semiconductor laminated structure in which the nitride semiconductor layers are laminated in this order,
A first protective film covering the surface and side surfaces of the mesa-type semiconductor multilayer structure;
A second protective film covering the first protective film,
The refractive index of the first protective film is 1.46 or less,
A nitride light-emitting device having a refractive index of the second protective film exceeding 1.46.
前記メサ型の半導体積層構造部の表面および側面に第１の保護膜を形成する工程と、
前記第１の保護膜に熱処理を加える工程と、
前記１の保護膜上に第２の保護膜を形成する工程と、を備える窒化物発光素子の製造方法。 On a nitride semiconductor substrate, a first conductivity type nitride semiconductor layer containing at least one of Al and Ga, a nitride light emitting layer containing Al and Ga, and a second conductivity type containing at least one of Al and Ga Forming a mesa-type semiconductor multilayer structure in which nitride semiconductor layers are laminated in this order;
Forming a first protective film on the surface and side surfaces of the mesa-type semiconductor multilayer structure;
Applying a heat treatment to the first protective film;
And a step of forming a second protective film on the first protective film.
前記第１の保護膜に熱処理を加えて該第１の保護膜の屈折率を１．４６以下に合わせ込む工程である請求項７に記載の窒化物発光素子の製造方法。 The step of applying a heat treatment to the first protective film includes:
The method for manufacturing a nitride light-emitting element according to claim 7, wherein the first protective film is a step of applying a heat treatment to adjust the refractive index of the first protective film to 1.46 or less.
前記第１の保護膜上に屈折率が１．４６を超える第２の保護膜を形成する工程である請求項７または請求項８に記載の窒化物発光素子の製造方法。 The step of forming the second protective film includes:
The method for manufacturing a nitride light-emitting element according to claim 7, wherein the second protective film has a refractive index exceeding 1.46 on the first protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015048725A JP2016171141A (en) | 2015-03-11 | 2015-03-11 | Nitride light emitting element and nitride light emitting element manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015048725A JP2016171141A (en) | 2015-03-11 | 2015-03-11 | Nitride light emitting element and nitride light emitting element manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016171141A JP2016171141A (en) | 2016-09-23 |
| JP2016171141A5 true JP2016171141A5 (en) | 2018-04-19 |
Family
ID=56983991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015048725A Pending JP2016171141A (en) | 2015-03-11 | 2015-03-11 | Nitride light emitting element and nitride light emitting element manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2016171141A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7011163B2 (en) | 2018-02-22 | 2022-02-10 | 日亜化学工業株式会社 | Manufacturing method of semiconductor device |
| JP7370438B1 (en) | 2022-10-05 | 2023-10-27 | 日機装株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
| JP7370437B1 (en) | 2022-10-05 | 2023-10-27 | 日機装株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3491903B2 (en) * | 1990-05-18 | 2004-02-03 | セイコーエプソン株式会社 | Method for manufacturing thin film semiconductor device |
| JP3231096B2 (en) * | 1991-10-15 | 2001-11-19 | キヤノン株式会社 | Base for liquid jet recording head, method of manufacturing the same, liquid jet recording head, and liquid jet recording apparatus |
| JPH0764030A (en) * | 1993-08-24 | 1995-03-10 | Sumitomo Osaka Cement Co Ltd | Housing construction mounting waveguide type optical element |
| JPH07304127A (en) * | 1994-05-13 | 1995-11-21 | Toppan Printing Co Ltd | Gas barrier packaging material and production thereof |
| JPH098348A (en) * | 1995-06-16 | 1997-01-10 | Stanley Electric Co Ltd | Light emitting diode and fabrication thereof |
| JPH09116192A (en) * | 1995-10-16 | 1997-05-02 | Toshiba Corp | Light emitting diode |
| JPH10215003A (en) * | 1997-01-31 | 1998-08-11 | Stanley Electric Co Ltd | Led chip |
| JPH10303460A (en) * | 1997-02-27 | 1998-11-13 | Toshiba Corp | Semiconductor element and its manufacture |
| JP2001141950A (en) * | 1999-09-02 | 2001-05-25 | Hitachi Cable Ltd | Optical waveguide and its manufacturing method |
| JP2001284644A (en) * | 2000-03-30 | 2001-10-12 | Nichia Chem Ind Ltd | Light emitting element and light emitting element package |
| TWI344709B (en) * | 2007-06-14 | 2011-07-01 | Epistar Corp | Light emitting device |
| JP5379703B2 (en) * | 2010-01-26 | 2013-12-25 | パナソニック株式会社 | Ultraviolet semiconductor light emitting device |
| JP5319628B2 (en) * | 2010-08-26 | 2013-10-16 | シャープ株式会社 | Nitride semiconductor element and semiconductor optical device |
-
2015
- 2015-03-11 JP JP2015048725A patent/JP2016171141A/en active Pending
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