JP2016140053A - 膜バルク音響共振器フィルタを作製する方法 - Google Patents
膜バルク音響共振器フィルタを作製する方法 Download PDFInfo
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- JP2016140053A JP2016140053A JP2015146738A JP2015146738A JP2016140053A JP 2016140053 A JP2016140053 A JP 2016140053A JP 2015146738 A JP2015146738 A JP 2015146738A JP 2015146738 A JP2015146738 A JP 2015146738A JP 2016140053 A JP2016140053 A JP 2016140053A
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Links
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- 229910052454 barium strontium titanate Inorganic materials 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
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- 239000010409 thin film Substances 0.000 claims abstract description 16
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 229910052594 sapphire Inorganic materials 0.000 claims description 24
- 239000010980 sapphire Substances 0.000 claims description 24
- 239000000919 ceramic Substances 0.000 claims description 22
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 18
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- 238000005553 drilling Methods 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 10
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- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 claims description 6
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
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- 230000008018 melting Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- 239000010931 gold Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
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- 238000012545 processing Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
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- 239000000155 melt Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000002998 adhesive polymer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/606,323 US20160197593A1 (en) | 2015-01-06 | 2015-01-27 | Method for fabricating film bulk acoustic resonator filters |
| US14/606,323 | 2015-01-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2016140053A true JP2016140053A (ja) | 2016-08-04 |
Family
ID=56513469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015146738A Pending JP2016140053A (ja) | 2015-01-27 | 2015-07-24 | 膜バルク音響共振器フィルタを作製する方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2016140053A (zh) |
| KR (1) | KR101730335B1 (zh) |
| CN (1) | CN105827213B (zh) |
| TW (1) | TWI648948B (zh) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018012573A1 (ja) | 2016-07-15 | 2018-01-18 | 住友化学株式会社 | ウラシル化合物結晶の製造方法 |
| CN108075743A (zh) * | 2016-11-15 | 2018-05-25 | 环球通信半导体有限责任公司 | 具有杂散谐振抑制的膜体声谐振器 |
| CN110999077A (zh) * | 2017-06-08 | 2020-04-10 | Rf360欧洲有限责任公司 | 电器件晶片 |
| JP2021057805A (ja) * | 2019-09-30 | 2021-04-08 | 国立大学法人東北大学 | 弾性波デバイス |
| JP2021536160A (ja) * | 2019-07-19 | 2021-12-23 | 中芯集成電路（寧波）有限公司 | 薄膜バルク音響波共振器ならびにその製造方法 |
| US11736088B2 (en) | 2016-11-15 | 2023-08-22 | Global Communication Semiconductors, Llc | Film bulk acoustic resonator with spurious resonance suppression |
| US11764750B2 (en) | 2018-07-20 | 2023-09-19 | Global Communication Semiconductors, Llc | Support structure for bulk acoustic wave resonator |
| US11817839B2 (en) | 2019-03-28 | 2023-11-14 | Global Communication Semiconductors, Llc | Single-crystal bulk acoustic wave resonator and method of making thereof |
| WO2024015239A1 (en) * | 2022-07-11 | 2024-01-18 | Applied Materials, Inc. | Selective laser patterning on piezoelectric thin films for piezoelectric device fabrication |
| US11909373B2 (en) | 2019-10-15 | 2024-02-20 | Global Communication Semiconductors, Llc | Bulk acoustic resonator structures with improved edge frames |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180123561A1 (en) * | 2016-10-31 | 2018-05-03 | Samsung Electro-Mechanics Co., Ltd. | Filter |
| US10508364B2 (en) * | 2017-03-24 | 2019-12-17 | Zhuhai Crystal Resonance Technologies Co., Ltd. | RF resonator membranes and methods of construction |
| US10389331B2 (en) * | 2017-03-24 | 2019-08-20 | Zhuhai Crystal Resonance Technologies Co., Ltd. | Single crystal piezoelectric RF resonators and filters |
| US10601397B2 (en) * | 2017-03-24 | 2020-03-24 | Zhuhai Crystal Resonance Technologies Co., Ltd. | RF resonator electrode and membrane combinations and method of fabrication |
| KR101862514B1 (ko) * | 2017-05-18 | 2018-05-29 | 삼성전기주식회사 | 체적 음향 공진기 |
| JP7231368B2 (ja) * | 2018-09-26 | 2023-03-01 | 太陽誘電株式会社 | 弾性波デバイス |
| CN111181520B (zh) * | 2018-11-09 | 2023-03-24 | 恒劲科技股份有限公司 | 一种表面声波滤波器封装结构及其制作方法 |
| US11990889B2 (en) | 2020-12-28 | 2024-05-21 | Win Semiconductors Corp. | Bulk acoustic wave resonator and formation method thereof |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6662419B2 (en) * | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
| KR100506729B1 (ko) * | 2002-05-21 | 2005-08-08 | 삼성전기주식회사 | 박막 벌크 어코스틱 공진기（ＦＢＡＲｓ）소자 및 그제조방법 |
| US20040027030A1 (en) * | 2002-08-08 | 2004-02-12 | Li-Peng Wang | Manufacturing film bulk acoustic resonator filters |
| US7056800B2 (en) * | 2003-12-15 | 2006-06-06 | Motorola, Inc. | Printed circuit embedded capacitors |
| US6992400B2 (en) * | 2004-01-30 | 2006-01-31 | Nokia Corporation | Encapsulated electronics device with improved heat dissipation |
| KR100622955B1 (ko) * | 2004-04-06 | 2006-09-18 | 삼성전자주식회사 | 박막 벌크 음향 공진기 및 그 제조방법 |
| CA2563775C (en) * | 2004-04-20 | 2014-08-26 | Visualsonics Inc. | Arrayed ultrasonic transducer |
| US8766512B2 (en) * | 2009-03-31 | 2014-07-01 | Sand 9, Inc. | Integration of piezoelectric materials with substrates |
| WO2010074127A1 (ja) * | 2008-12-24 | 2010-07-01 | 株式会社大真空 | 圧電振動デバイス、圧電振動デバイスの製造方法、および圧電振動デバイスを構成する構成部材のエッチング方法 |
| TWI430569B (zh) * | 2010-10-11 | 2014-03-11 | Richwave Technology Corp | 體聲波共振元件與體聲波濾波器與製作體聲波共振元件的方法 |
| JP6135296B2 (ja) * | 2013-05-20 | 2017-05-31 | 富士通株式会社 | パッケージ構造及びパッケージ構造を基板に接合する方法 |
-
2015
- 2015-04-15 KR KR1020150052860A patent/KR101730335B1/ko active IP Right Grant
- 2015-07-24 JP JP2015146738A patent/JP2016140053A/ja active Pending
- 2015-12-08 CN CN201510901507.9A patent/CN105827213B/zh active Active
- 2015-12-30 TW TW104144544A patent/TWI648948B/zh active
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018012573A1 (ja) | 2016-07-15 | 2018-01-18 | 住友化学株式会社 | ウラシル化合物結晶の製造方法 |
| US11736088B2 (en) | 2016-11-15 | 2023-08-22 | Global Communication Semiconductors, Llc | Film bulk acoustic resonator with spurious resonance suppression |
| CN108075743A (zh) * | 2016-11-15 | 2018-05-25 | 环球通信半导体有限责任公司 | 具有杂散谐振抑制的膜体声谐振器 |
| CN110999077A (zh) * | 2017-06-08 | 2020-04-10 | Rf360欧洲有限责任公司 | 电器件晶片 |
| US11764750B2 (en) | 2018-07-20 | 2023-09-19 | Global Communication Semiconductors, Llc | Support structure for bulk acoustic wave resonator |
| US11817839B2 (en) | 2019-03-28 | 2023-11-14 | Global Communication Semiconductors, Llc | Single-crystal bulk acoustic wave resonator and method of making thereof |
| JP7259005B2 (ja) | 2019-07-19 | 2023-04-17 | 中芯集成電路（寧波）有限公司 | 薄膜バルク音響波共振器ならびにその製造方法 |
| JP2021536160A (ja) * | 2019-07-19 | 2021-12-23 | 中芯集成電路（寧波）有限公司 | 薄膜バルク音響波共振器ならびにその製造方法 |
| US11942917B2 (en) | 2019-07-19 | 2024-03-26 | Ningbo Semiconductor International Corporation | Film bulk acoustic resonator and fabrication method thereof |
| JP7378723B2 (ja) | 2019-09-30 | 2023-11-14 | 国立大学法人東北大学 | 弾性波デバイス |
| JP2021057805A (ja) * | 2019-09-30 | 2021-04-08 | 国立大学法人東北大学 | 弾性波デバイス |
| US11909373B2 (en) | 2019-10-15 | 2024-02-20 | Global Communication Semiconductors, Llc | Bulk acoustic resonator structures with improved edge frames |
| US12021498B2 (en) | 2019-10-15 | 2024-06-25 | Global Communication Semiconductors, Llc | Bulk acoustic wave resonator with multilayer base |
| WO2024015239A1 (en) * | 2022-07-11 | 2024-01-18 | Applied Materials, Inc. | Selective laser patterning on piezoelectric thin films for piezoelectric device fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101730335B1 (ko) | 2017-04-27 |
| TW201707375A (zh) | 2017-02-16 |
| KR20160092459A (ko) | 2016-08-04 |
| CN105827213B (zh) | 2019-01-15 |
| CN105827213A (zh) | 2016-08-03 |
| TWI648948B (zh) | 2019-01-21 |
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