JP2016136547A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
JP2016136547A
JP2016136547A JP2013099523A JP2013099523A JP2016136547A JP 2016136547 A JP2016136547 A JP 2016136547A JP 2013099523 A JP2013099523 A JP 2013099523A JP 2013099523 A JP2013099523 A JP 2013099523A JP 2016136547 A JP2016136547 A JP 2016136547A
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JP
Japan
Prior art keywords
insulating film
source electrode
drain electrode
electrode
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013099523A
Other languages
English (en)
Japanese (ja)
Inventor
大佑 栗田
Daisuke Kurita
大佑 栗田
信明 寺口
Nobuaki Teraguchi
信明 寺口
敬久 藤井
Yoshihisa Fujii
敬久 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2013099523A priority Critical patent/JP2016136547A/ja
Priority to PCT/JP2014/051779 priority patent/WO2014181556A1/fr
Publication of JP2016136547A publication Critical patent/JP2016136547A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2013099523A 2013-05-09 2013-05-09 電界効果トランジスタ Pending JP2016136547A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013099523A JP2016136547A (ja) 2013-05-09 2013-05-09 電界効果トランジスタ
PCT/JP2014/051779 WO2014181556A1 (fr) 2013-05-09 2014-01-28 Transistor à effet de champ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013099523A JP2016136547A (ja) 2013-05-09 2013-05-09 電界効果トランジスタ

Publications (1)

Publication Number Publication Date
JP2016136547A true JP2016136547A (ja) 2016-07-28

Family

ID=51867043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013099523A Pending JP2016136547A (ja) 2013-05-09 2013-05-09 電界効果トランジスタ

Country Status (2)

Country Link
JP (1) JP2016136547A (fr)
WO (1) WO2014181556A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11443956B2 (en) 2020-02-06 2022-09-13 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6372524B2 (ja) * 2016-06-29 2018-08-15 サンケン電気株式会社 半導体装置及びその製造方法
JP7157138B2 (ja) * 2018-03-22 2022-10-19 パナソニックホールディングス株式会社 窒化物半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008086001A2 (fr) * 2007-01-10 2008-07-17 International Rectifier Corporation Mise en forme de zone active pour dispositif au nitrure iii et procédé de fabrication
US7750370B2 (en) * 2007-12-20 2010-07-06 Northrop Grumman Space & Mission Systems Corp. High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
JP2010278150A (ja) * 2009-05-27 2010-12-09 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP5825018B2 (ja) * 2011-09-29 2015-12-02 富士通株式会社 化合物半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11443956B2 (en) 2020-02-06 2022-09-13 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
WO2014181556A1 (fr) 2014-11-13

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