JP2016126319A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016126319A5 JP2016126319A5 JP2015180419A JP2015180419A JP2016126319A5 JP 2016126319 A5 JP2016126319 A5 JP 2016126319A5 JP 2015180419 A JP2015180419 A JP 2015180419A JP 2015180419 A JP2015180419 A JP 2015180419A JP 2016126319 A5 JP2016126319 A5 JP 2016126319A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- reflective mask
- reflective
- mask blank
- multilayer reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006096 absorbing agent Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 6
- 230000001681 protective effect Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014265214 | 2014-12-26 | ||
| JP2014265214 | 2014-12-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016126319A JP2016126319A (ja) | 2016-07-11 |
| JP2016126319A5 true JP2016126319A5 (enrdf_load_stackoverflow) | 2018-08-23 |
| JP6651314B2 JP6651314B2 (ja) | 2020-02-19 |
Family
ID=56357893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015180419A Active JP6651314B2 (ja) | 2014-12-26 | 2015-09-14 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6651314B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6855190B2 (ja) * | 2016-08-26 | 2021-04-07 | Hoya株式会社 | 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法 |
| WO2018074512A1 (ja) * | 2016-10-21 | 2018-04-26 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
| JP7401356B2 (ja) * | 2019-03-27 | 2023-12-19 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| JP7409861B2 (ja) * | 2019-12-18 | 2024-01-09 | 株式会社トッパンフォトマスク | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び反射型マスクの修正方法 |
| JP7610369B2 (ja) * | 2020-08-03 | 2025-01-08 | テクセンドフォトマスク株式会社 | マスクブランク、及びマスクの製造方法 |
| KR102522952B1 (ko) * | 2020-09-02 | 2023-04-19 | 주식회사 에스앤에스텍 | 극자외선용 반사형 블랭크 마스크 및 그의 결함 검사 방법 |
| CN112158794B (zh) * | 2020-09-04 | 2024-03-22 | 杭州探真纳米科技有限公司 | 一种采用等离子体刻蚀制备原子力显微镜探针阶梯型基底的方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05113656A (ja) * | 1991-10-23 | 1993-05-07 | Toppan Printing Co Ltd | 位相シフトマスクおよびその製造方法並びにそれに用いる位相シフトマスク用ブランク |
| JP4602430B2 (ja) * | 2008-03-03 | 2010-12-22 | 株式会社東芝 | 反射型マスク及びその作製方法 |
| US8372564B2 (en) * | 2008-05-09 | 2013-02-12 | Hoya Corporation | Reflective mask, reflective mask blank and method of manufacturing reflective mask |
| US8562794B2 (en) * | 2010-12-14 | 2013-10-22 | Asahi Glass Company, Limited | Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank |
| JP6157874B2 (ja) * | 2012-03-19 | 2017-07-05 | Hoya株式会社 | Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法 |
| JP6226517B2 (ja) * | 2012-09-11 | 2017-11-08 | 芝浦メカトロニクス株式会社 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
| JP2016009744A (ja) * | 2014-06-24 | 2016-01-18 | 凸版印刷株式会社 | 反射型マスクおよび反射型マスクブランク |
-
2015
- 2015-09-14 JP JP2015180419A patent/JP6651314B2/ja active Active