JP2016115814A - 成膜方法 - Google Patents
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Abstract
Description
図1は、成膜装置10の一例を示す断面図である。図2は、上方から見た場合の成膜装置10の一例を示す模式図である。図2におけるA−A断面が図1である。図3および図4は、図1における軸線Xの左側の部分の一例を示す拡大断面図である。図5は、ユニットUの下面の一例を示す図である。図6は、図1における軸線Xの右側の部分の一例を示す拡大断面図である。図1〜図6に示す成膜装置10は、主に、処理容器12、載置台14、第1のガス供給部16、排気部18、第2のガス供給部20、およびプラズマ生成部22を備える。
以下では、図1〜図6を用いて説明した成膜装置10を用いて、窒化膜としてSiN膜をシリコン等の基板W上に形成し、形成したSiN膜のストレスを測定する実験を行った。まず、載置台14の回転速度を変えて、SiN膜のストレスを測定する実験を行った。実験では、第2の領域R2に供給するNH3ガスの流量およびH2ガスの流量を、それぞれ750sccmおよび4300sccmとし、アンテナ22a−2および22a−3から第2の領域R2にマイクロ波を供給した。なお、アンテナ22a−1は使用しなかった。また、プラズマ処理における基板Wの温度は500℃であり、前駆体ガスにはDCSガスを用いた。
本実施例では、前駆体ガスとしてDCSガスに代えてヘキサクロロジシランガスを用いてSiN膜を成膜する点が、実施例1とは異なる。以下では、図1〜図6を用いて説明した成膜装置10を用いて、窒化膜としてSiN膜をシリコン等の基板W上に形成し、形成したSiN膜のストレスを測定する実験を行った。
本実施例では、前駆体ガスとしてDCSガスと硼素原子を含有するガスとの混合ガスを用いて窒化膜を成膜する点が、実施例1および2とは異なる。本実施例では、硼素原子を含有するガスとして、BCl3ガスを用いた。以下では、図1〜図6を用いて説明した成膜装置10を用いて、窒化膜をシリコン等の基板W上に形成し、形成した窒化膜のストレスを測定する実験を行った。
12 処理容器
22a アンテナ
Claims (10)
- 処理容器内の被処理基板に窒化膜を形成する成膜方法であって、
前記処理容器内に、ケイ素を含有するガスを含む前駆体ガスを供給し、前記被処理基板の表面に前駆体ガスの分子を吸着させる吸着工程と、
前記処理容器内に、窒素原子および水素原子を含有するガスを含む反応ガスを供給すると共に、アンテナからマイクロ波を供給することにより、前記被処理基板の直上に前記反応ガスのプラズマを生成し、生成したプラズマにより、前駆体ガスの分子が吸着した前記被処理基板の表面をプラズマ処理する反応工程と
を含むことを特徴とする成膜方法。 - 前記ケイ素を含有するガスには、Si−Cl結合を有する分子を含むガスが含まれることを特徴とする請求項1に記載の成膜方法。
- 前記反応ガスは、NH3ガスおよびH2ガスの混合ガスであることを特徴とする請求項1または2に記載の成膜方法。
- 前記反応ガスにおいて、NH3ガスの流量は、H2ガスの流量よりも多いことを特徴とする請求項3に記載の成膜方法。
- 前記前駆体ガスには、水素原子を含有するガスが含まれないことを特徴とする請求項1から4のいずれか一項に記載の成膜方法。
- 前記前駆体ガスには、ヘキサクロロジシランを含有するガスが含まれることを特徴とする請求項1から5のいずれか一項に記載の成膜方法。
- 前記前駆体ガスには、BCl3ガスが含まれることを特徴とする請求項1から6のいずれか一項に記載の成膜方法。
- 前記ケイ素を含有するガスおよびBCl3ガスの合計の流量に対するBCl3ガスの流量の比は、30%〜50%であることを特徴とする請求項7に記載の成膜方法。
- 前記処理容器は、
前記被処理基板を載置し、前記被処理基板が軸線の周囲を移動するよう前記軸線を中心に回転可能に設けられた載置台の回転により前記軸線に対して前記被処理基板が移動する周方向に複数の領域に分けられており、
前記吸着工程において、前記前駆体ガスは、前記複数の領域の中の一つの領域に供給され、
前記反応工程において、前記反応ガスは、前記複数の領域の中の他の領域に供給されることを特徴とする請求項1から8のいずれか一項に記載の成膜方法。 - 前記反応ガスは、NH3ガスおよびH2ガスの混合ガスであり、
前記載置台の回転数は、3〜10rpmであり、
前記アンテナの数は、2または3であり、
前記NH3ガスの流量は、100〜750sccmであり、
前記H2ガスの流量は、4300〜8000sccmであることを特徴とする請求項9に記載の成膜方法。
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JP2014253494A JP6378070B2 (ja) | 2014-12-15 | 2014-12-15 | 成膜方法 |
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US14/967,751 US9478410B2 (en) | 2014-12-15 | 2015-12-14 | Method of forming nitride film with plasma |
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Cited By (7)
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KR20180016951A (ko) | 2016-08-08 | 2018-02-20 | 도쿄엘렉트론가부시키가이샤 | 실리콘 질화막의 성막 방법 및 성막 장치 |
JP2018088517A (ja) * | 2016-11-24 | 2018-06-07 | 東京エレクトロン株式会社 | シリコン含有膜の形成方法 |
KR20180089289A (ko) | 2017-01-31 | 2018-08-08 | 도쿄엘렉트론가부시키가이샤 | 마이크로파 플라스마원, 마이크로파 플라스마 처리 장치, 및 플라스마 처리 방법 |
US10151029B2 (en) | 2016-08-08 | 2018-12-11 | Tokyo Electron Limited | Silicon nitride film forming method and silicon nitride film forming apparatus |
KR20190112661A (ko) * | 2018-03-26 | 2019-10-07 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
JP2021034451A (ja) * | 2019-08-20 | 2021-03-01 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR20210054988A (ko) | 2019-11-06 | 2021-05-14 | 도쿄엘렉트론가부시키가이샤 | 처리 방법 |
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JP6305314B2 (ja) * | 2014-10-29 | 2018-04-04 | 東京エレクトロン株式会社 | 成膜装置およびシャワーヘッド |
JP6608332B2 (ja) * | 2016-05-23 | 2019-11-20 | 東京エレクトロン株式会社 | 成膜装置 |
US10748745B2 (en) | 2016-08-16 | 2020-08-18 | Applied Materials, Inc. | Modular microwave plasma source |
CN106602270A (zh) * | 2016-12-16 | 2017-04-26 | 西安科锐盛创新科技有限公司 | SPiN二极管可重构等离子套筒偶极子天线 |
US10707058B2 (en) | 2017-04-11 | 2020-07-07 | Applied Materials, Inc. | Symmetric and irregular shaped plasmas using modular microwave sources |
US11037764B2 (en) | 2017-05-06 | 2021-06-15 | Applied Materials, Inc. | Modular microwave source with local Lorentz force |
US11081317B2 (en) | 2018-04-20 | 2021-08-03 | Applied Materials, Inc. | Modular high-frequency source |
US11393661B2 (en) | 2018-04-20 | 2022-07-19 | Applied Materials, Inc. | Remote modular high-frequency source |
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JP7247813B2 (ja) | 2019-08-20 | 2023-03-29 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
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KR20160072792A (ko) | 2016-06-23 |
US20160172183A1 (en) | 2016-06-16 |
TWI655311B (zh) | 2019-04-01 |
JP6378070B2 (ja) | 2018-08-22 |
US9478410B2 (en) | 2016-10-25 |
TW201625809A (zh) | 2016-07-16 |
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