JP2016103594A5 - - Google Patents

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Publication number
JP2016103594A5
JP2016103594A5 JP2014241903A JP2014241903A JP2016103594A5 JP 2016103594 A5 JP2016103594 A5 JP 2016103594A5 JP 2014241903 A JP2014241903 A JP 2014241903A JP 2014241903 A JP2014241903 A JP 2014241903A JP 2016103594 A5 JP2016103594 A5 JP 2016103594A5
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JP
Japan
Prior art keywords
refractive index
diffraction grating
layer
optical device
semiconductor optical
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JP2014241903A
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English (en)
Japanese (ja)
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JP6331997B2 (ja
JP2016103594A (ja
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Priority to JP2014241903A priority Critical patent/JP6331997B2/ja
Priority claimed from JP2014241903A external-priority patent/JP6331997B2/ja
Priority to US14/799,087 priority patent/US9685764B2/en
Priority to CN201510849909.9A priority patent/CN105655868B/zh
Publication of JP2016103594A publication Critical patent/JP2016103594A/ja
Publication of JP2016103594A5 publication Critical patent/JP2016103594A5/ja
Application granted granted Critical
Publication of JP6331997B2 publication Critical patent/JP6331997B2/ja
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JP2014241903A 2014-11-28 2014-11-28 半導体光素子 Active JP6331997B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014241903A JP6331997B2 (ja) 2014-11-28 2014-11-28 半導体光素子
US14/799,087 US9685764B2 (en) 2014-11-28 2015-07-14 Semiconductor optical element and surface-emitting semiconductor optical element
CN201510849909.9A CN105655868B (zh) 2014-11-28 2015-11-27 半导体光元件以及面发光半导体光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014241903A JP6331997B2 (ja) 2014-11-28 2014-11-28 半導体光素子

Publications (3)

Publication Number Publication Date
JP2016103594A JP2016103594A (ja) 2016-06-02
JP2016103594A5 true JP2016103594A5 (enExample) 2017-02-09
JP6331997B2 JP6331997B2 (ja) 2018-05-30

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Family Applications (1)

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JP2014241903A Active JP6331997B2 (ja) 2014-11-28 2014-11-28 半導体光素子

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US (1) US9685764B2 (enExample)
JP (1) JP6331997B2 (enExample)
CN (1) CN105655868B (enExample)

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Publication number Priority date Publication date Assignee Title
US10389088B2 (en) * 2015-03-13 2019-08-20 Hamamatsu Photonics K.K. Semiconductor light emitting element
JP6468180B2 (ja) * 2015-12-24 2019-02-13 三菱電機株式会社 光半導体装置の製造方法
US20190041260A1 (en) * 2016-01-25 2019-02-07 The Regents Of The University Of California Nano-scale pixelated filter-free color detector
DE102017100997A1 (de) * 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
CN109962406B (zh) * 2017-12-14 2021-11-12 中国科学院半导体研究所 半导体激光器及其制备方法
CN108933382B (zh) * 2018-06-21 2019-12-20 武汉光迅科技股份有限公司 一种光栅、dbr激光器及光栅制备方法
CN111769437B (zh) * 2020-07-21 2021-09-21 厦门市三安集成电路有限公司 布拉格光栅及其制备方法、分布反馈激光器
US20220109287A1 (en) * 2020-10-01 2022-04-07 Vixar, Inc. Metalens Array and Vertical Cavity Surface Emitting Laser Systems and Methods
CN112117640B (zh) * 2020-11-02 2022-02-22 北京工业大学 一种衬底型衍射光学元件vcsel分光结构及制备方法
US12362541B2 (en) * 2021-04-30 2025-07-15 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
CN113745968B (zh) * 2021-08-27 2023-06-30 因林光电科技(苏州)有限公司 一种半导体激光器及其制备方法
WO2025022644A1 (ja) * 2023-07-27 2025-01-30 日本電信電話株式会社 半導体レーザ
CN119726366B (zh) * 2025-02-28 2025-06-10 苏州实验室 衍射型面发射半导体激光器及其制备方法

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPH0529705A (ja) 1991-07-22 1993-02-05 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体分布帰還型レーザ装置
EP0507956B1 (en) 1990-10-19 1996-02-28 Optical Measurement Technology Development Co. Ltd. Distributed feedback semiconductor laser
EP0706243A3 (en) * 1994-09-28 1996-11-13 Matsushita Electric Industrial Co Ltd Distributed feedback semiconductor laser and manufacturing process
JP2924714B2 (ja) * 1995-06-19 1999-07-26 日本電気株式会社 分布帰還型半導体レーザ素子
JP3140788B2 (ja) * 1995-12-28 2001-03-05 松下電器産業株式会社 半導体レーザ装置
JP2000349394A (ja) * 1999-06-02 2000-12-15 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2001168455A (ja) * 1999-12-06 2001-06-22 Fujitsu Ltd 光半導体装置の製造方法
US6560259B1 (en) * 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
US6365428B1 (en) * 2000-06-15 2002-04-02 Sandia Corporation Embedded high-contrast distributed grating structures
JP3745985B2 (ja) 2001-01-24 2006-02-15 古河電気工業株式会社 複素結合型の分布帰還型半導体レーザ素子
CN101144873B (zh) * 2003-03-31 2010-12-01 日本电信电话株式会社 光半导体元件和光半导体集成电路
JP4358583B2 (ja) * 2003-09-12 2009-11-04 株式会社ミツトヨ スケールの製造方法
JP4350774B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
US8201268B1 (en) * 2008-11-13 2012-06-12 Optonet Inc. Integrated high index contrast sub-wavelength optical transforming tip (HICSWOTT) for near-field scanning optical microscope
DE102009001505A1 (de) * 2008-11-21 2010-05-27 Vertilas Gmbh Oberflächenemittierende Halbleiterlaserdiode und Verfahren zur Herstellung derselben
US8343878B2 (en) * 2008-12-19 2013-01-01 The Board Of Trustees Of The University Of Illinois Method of plasma etching GA-based compound semiconductors

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