CN105655868B - 半导体光元件以及面发光半导体光元件 - Google Patents

半导体光元件以及面发光半导体光元件 Download PDF

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Publication number
CN105655868B
CN105655868B CN201510849909.9A CN201510849909A CN105655868B CN 105655868 B CN105655868 B CN 105655868B CN 201510849909 A CN201510849909 A CN 201510849909A CN 105655868 B CN105655868 B CN 105655868B
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diffraction grating
refractive index
layer
lower portion
buried layer
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Chinese (zh)
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CN105655868A (zh
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渊田步
中村直干
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
CN201510849909.9A 2014-11-28 2015-11-27 半导体光元件以及面发光半导体光元件 Active CN105655868B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-241903 2014-11-28
JP2014241903A JP6331997B2 (ja) 2014-11-28 2014-11-28 半導体光素子

Publications (2)

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CN105655868A CN105655868A (zh) 2016-06-08
CN105655868B true CN105655868B (zh) 2019-02-19

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US (1) US9685764B2 (enExample)
JP (1) JP6331997B2 (enExample)
CN (1) CN105655868B (enExample)

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US10389088B2 (en) * 2015-03-13 2019-08-20 Hamamatsu Photonics K.K. Semiconductor light emitting element
JP6468180B2 (ja) * 2015-12-24 2019-02-13 三菱電機株式会社 光半導体装置の製造方法
US20190041260A1 (en) * 2016-01-25 2019-02-07 The Regents Of The University Of California Nano-scale pixelated filter-free color detector
DE102017100997A1 (de) * 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
CN109962406B (zh) * 2017-12-14 2021-11-12 中国科学院半导体研究所 半导体激光器及其制备方法
CN108933382B (zh) * 2018-06-21 2019-12-20 武汉光迅科技股份有限公司 一种光栅、dbr激光器及光栅制备方法
CN111769437B (zh) * 2020-07-21 2021-09-21 厦门市三安集成电路有限公司 布拉格光栅及其制备方法、分布反馈激光器
US20220109287A1 (en) * 2020-10-01 2022-04-07 Vixar, Inc. Metalens Array and Vertical Cavity Surface Emitting Laser Systems and Methods
CN112117640B (zh) * 2020-11-02 2022-02-22 北京工业大学 一种衬底型衍射光学元件vcsel分光结构及制备方法
US12362541B2 (en) * 2021-04-30 2025-07-15 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
CN113745968B (zh) * 2021-08-27 2023-06-30 因林光电科技(苏州)有限公司 一种半导体激光器及其制备方法
WO2025022644A1 (ja) * 2023-07-27 2025-01-30 日本電信電話株式会社 半導体レーザ
CN119726366B (zh) * 2025-02-28 2025-06-10 苏州实验室 衍射型面发射半导体激光器及其制备方法

Citations (4)

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US5289494A (en) * 1990-10-19 1994-02-22 Optical Measurement Technology Development Co., Ltd. Distributed feedback semiconductor laser
US6560259B1 (en) * 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
CN1701478A (zh) * 2003-03-31 2005-11-23 日本电信电话株式会社 光半导体元件和光半导体集成电路
US8201268B1 (en) * 2008-11-13 2012-06-12 Optonet Inc. Integrated high index contrast sub-wavelength optical transforming tip (HICSWOTT) for near-field scanning optical microscope

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JPH0529705A (ja) 1991-07-22 1993-02-05 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体分布帰還型レーザ装置
EP0706243A3 (en) * 1994-09-28 1996-11-13 Matsushita Electric Industrial Co Ltd Distributed feedback semiconductor laser and manufacturing process
JP2924714B2 (ja) * 1995-06-19 1999-07-26 日本電気株式会社 分布帰還型半導体レーザ素子
JP3140788B2 (ja) * 1995-12-28 2001-03-05 松下電器産業株式会社 半導体レーザ装置
JP2000349394A (ja) * 1999-06-02 2000-12-15 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2001168455A (ja) * 1999-12-06 2001-06-22 Fujitsu Ltd 光半導体装置の製造方法
US6365428B1 (en) * 2000-06-15 2002-04-02 Sandia Corporation Embedded high-contrast distributed grating structures
JP3745985B2 (ja) 2001-01-24 2006-02-15 古河電気工業株式会社 複素結合型の分布帰還型半導体レーザ素子
JP4358583B2 (ja) * 2003-09-12 2009-11-04 株式会社ミツトヨ スケールの製造方法
JP4350774B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
DE102009001505A1 (de) * 2008-11-21 2010-05-27 Vertilas Gmbh Oberflächenemittierende Halbleiterlaserdiode und Verfahren zur Herstellung derselben
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289494A (en) * 1990-10-19 1994-02-22 Optical Measurement Technology Development Co., Ltd. Distributed feedback semiconductor laser
US6560259B1 (en) * 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
CN1701478A (zh) * 2003-03-31 2005-11-23 日本电信电话株式会社 光半导体元件和光半导体集成电路
US8201268B1 (en) * 2008-11-13 2012-06-12 Optonet Inc. Integrated high index contrast sub-wavelength optical transforming tip (HICSWOTT) for near-field scanning optical microscope

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US9685764B2 (en) 2017-06-20
US20160156154A1 (en) 2016-06-02
CN105655868A (zh) 2016-06-08
JP6331997B2 (ja) 2018-05-30
JP2016103594A (ja) 2016-06-02

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