JP6331997B2 - 半導体光素子 - Google Patents

半導体光素子 Download PDF

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Publication number
JP6331997B2
JP6331997B2 JP2014241903A JP2014241903A JP6331997B2 JP 6331997 B2 JP6331997 B2 JP 6331997B2 JP 2014241903 A JP2014241903 A JP 2014241903A JP 2014241903 A JP2014241903 A JP 2014241903A JP 6331997 B2 JP6331997 B2 JP 6331997B2
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Japan
Prior art keywords
refractive index
diffraction grating
layer
optical device
semiconductor optical
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JP2014241903A
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Japanese (ja)
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JP2016103594A5 (enExample
JP2016103594A (ja
Inventor
歩 淵田
歩 淵田
直幹 中村
直幹 中村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2014241903A priority Critical patent/JP6331997B2/ja
Priority to US14/799,087 priority patent/US9685764B2/en
Priority to CN201510849909.9A priority patent/CN105655868B/zh
Publication of JP2016103594A publication Critical patent/JP2016103594A/ja
Publication of JP2016103594A5 publication Critical patent/JP2016103594A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
JP2014241903A 2014-11-28 2014-11-28 半導体光素子 Active JP6331997B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014241903A JP6331997B2 (ja) 2014-11-28 2014-11-28 半導体光素子
US14/799,087 US9685764B2 (en) 2014-11-28 2015-07-14 Semiconductor optical element and surface-emitting semiconductor optical element
CN201510849909.9A CN105655868B (zh) 2014-11-28 2015-11-27 半导体光元件以及面发光半导体光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014241903A JP6331997B2 (ja) 2014-11-28 2014-11-28 半導体光素子

Publications (3)

Publication Number Publication Date
JP2016103594A JP2016103594A (ja) 2016-06-02
JP2016103594A5 JP2016103594A5 (enExample) 2017-02-09
JP6331997B2 true JP6331997B2 (ja) 2018-05-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014241903A Active JP6331997B2 (ja) 2014-11-28 2014-11-28 半導体光素子

Country Status (3)

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US (1) US9685764B2 (enExample)
JP (1) JP6331997B2 (enExample)
CN (1) CN105655868B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10389088B2 (en) * 2015-03-13 2019-08-20 Hamamatsu Photonics K.K. Semiconductor light emitting element
JP6468180B2 (ja) * 2015-12-24 2019-02-13 三菱電機株式会社 光半導体装置の製造方法
US20190041260A1 (en) * 2016-01-25 2019-02-07 The Regents Of The University Of California Nano-scale pixelated filter-free color detector
DE102017100997A1 (de) * 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
CN109962406B (zh) * 2017-12-14 2021-11-12 中国科学院半导体研究所 半导体激光器及其制备方法
CN108933382B (zh) * 2018-06-21 2019-12-20 武汉光迅科技股份有限公司 一种光栅、dbr激光器及光栅制备方法
CN111769437B (zh) * 2020-07-21 2021-09-21 厦门市三安集成电路有限公司 布拉格光栅及其制备方法、分布反馈激光器
US20220109287A1 (en) * 2020-10-01 2022-04-07 Vixar, Inc. Metalens Array and Vertical Cavity Surface Emitting Laser Systems and Methods
CN112117640B (zh) * 2020-11-02 2022-02-22 北京工业大学 一种衬底型衍射光学元件vcsel分光结构及制备方法
US12362541B2 (en) * 2021-04-30 2025-07-15 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
CN113745968B (zh) * 2021-08-27 2023-06-30 因林光电科技(苏州)有限公司 一种半导体激光器及其制备方法
WO2025022644A1 (ja) * 2023-07-27 2025-01-30 日本電信電話株式会社 半導体レーザ
CN119726366B (zh) * 2025-02-28 2025-06-10 苏州实验室 衍射型面发射半导体激光器及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529705A (ja) 1991-07-22 1993-02-05 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体分布帰還型レーザ装置
EP0507956B1 (en) 1990-10-19 1996-02-28 Optical Measurement Technology Development Co. Ltd. Distributed feedback semiconductor laser
EP0706243A3 (en) * 1994-09-28 1996-11-13 Matsushita Electric Industrial Co Ltd Distributed feedback semiconductor laser and manufacturing process
JP2924714B2 (ja) * 1995-06-19 1999-07-26 日本電気株式会社 分布帰還型半導体レーザ素子
JP3140788B2 (ja) * 1995-12-28 2001-03-05 松下電器産業株式会社 半導体レーザ装置
JP2000349394A (ja) * 1999-06-02 2000-12-15 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2001168455A (ja) * 1999-12-06 2001-06-22 Fujitsu Ltd 光半導体装置の製造方法
US6560259B1 (en) * 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
US6365428B1 (en) * 2000-06-15 2002-04-02 Sandia Corporation Embedded high-contrast distributed grating structures
JP3745985B2 (ja) 2001-01-24 2006-02-15 古河電気工業株式会社 複素結合型の分布帰還型半導体レーザ素子
CN101144873B (zh) * 2003-03-31 2010-12-01 日本电信电话株式会社 光半导体元件和光半导体集成电路
JP4358583B2 (ja) * 2003-09-12 2009-11-04 株式会社ミツトヨ スケールの製造方法
JP4350774B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
US8201268B1 (en) * 2008-11-13 2012-06-12 Optonet Inc. Integrated high index contrast sub-wavelength optical transforming tip (HICSWOTT) for near-field scanning optical microscope
DE102009001505A1 (de) * 2008-11-21 2010-05-27 Vertilas Gmbh Oberflächenemittierende Halbleiterlaserdiode und Verfahren zur Herstellung derselben
US8343878B2 (en) * 2008-12-19 2013-01-01 The Board Of Trustees Of The University Of Illinois Method of plasma etching GA-based compound semiconductors

Also Published As

Publication number Publication date
US9685764B2 (en) 2017-06-20
CN105655868B (zh) 2019-02-19
US20160156154A1 (en) 2016-06-02
CN105655868A (zh) 2016-06-08
JP2016103594A (ja) 2016-06-02

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