IN2014CN02550A - - Google Patents

Info

Publication number
IN2014CN02550A
IN2014CN02550A IN2550CHN2014A IN2014CN02550A IN 2014CN02550 A IN2014CN02550 A IN 2014CN02550A IN 2550CHN2014 A IN2550CHN2014 A IN 2550CHN2014A IN 2014CN02550 A IN2014CN02550 A IN 2014CN02550A
Authority
IN
India
Prior art keywords
wafer
trenches
via device
conductive material
wafer surface
Prior art date
Application number
Other languages
English (en)
Inventor
Ronald Dekker
Bout Marcelis
Marcel Mulder
Ruediger Mauczok
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of IN2014CN02550A publication Critical patent/IN2014CN02550A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Combinations Of Printed Boards (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
IN2550CHN2014 2011-10-17 2012-10-12 IN2014CN02550A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161547942P 2011-10-17 2011-10-17
PCT/IB2012/055547 WO2013057642A1 (en) 2011-10-17 2012-10-12 Through-wafer via device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
IN2014CN02550A true IN2014CN02550A (enExample) 2015-08-07

Family

ID=47428773

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2550CHN2014 IN2014CN02550A (enExample) 2011-10-17 2012-10-12

Country Status (6)

Country Link
US (1) US9230908B2 (enExample)
EP (1) EP2745315A1 (enExample)
CN (1) CN103875068B (enExample)
IN (1) IN2014CN02550A (enExample)
RU (1) RU2603435C2 (enExample)
WO (1) WO2013057642A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9802224B2 (en) * 2011-12-20 2017-10-31 Koninklijke Philips N.V. Ultrasound transducer device and method of manufacturing the same
EP3126065B1 (en) 2014-03-31 2021-05-19 Koninklijke Philips N.V. Ic die, ultrasound probe, ultrasonic diagnostic system and method
WO2016147529A1 (ja) * 2015-03-16 2016-09-22 富士電機株式会社 半導体装置の製造方法
US11097942B2 (en) * 2016-10-26 2021-08-24 Analog Devices, Inc. Through silicon via (TSV) formation in integrated circuits
US10856844B2 (en) * 2018-05-03 2020-12-08 Butterfly Network, Inc. Vertical packaging for ultrasound-on-a-chip and related methods

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381385A (en) 1993-08-04 1995-01-10 Hewlett-Packard Company Electrical interconnect for multilayer transducer elements of a two-dimensional transducer array
US5619476A (en) * 1994-10-21 1997-04-08 The Board Of Trustees Of The Leland Stanford Jr. Univ. Electrostatic ultrasonic transducer
US6430109B1 (en) * 1999-09-30 2002-08-06 The Board Of Trustees Of The Leland Stanford Junior University Array of capacitive micromachined ultrasonic transducer elements with through wafer via connections
US6716737B2 (en) * 2002-07-29 2004-04-06 Hewlett-Packard Development Company, L.P. Method of forming a through-substrate interconnect
US20040104454A1 (en) * 2002-10-10 2004-06-03 Rohm Co., Ltd. Semiconductor device and method of producing the same
US6836020B2 (en) 2003-01-22 2004-12-28 The Board Of Trustees Of The Leland Stanford Junior University Electrical through wafer interconnects
US7257051B2 (en) * 2003-03-06 2007-08-14 General Electric Company Integrated interface electronics for reconfigurable sensor array
JP2005032769A (ja) * 2003-07-07 2005-02-03 Seiko Epson Corp 多層配線の形成方法、配線基板の製造方法、デバイスの製造方法
WO2005088699A1 (en) * 2004-03-10 2005-09-22 Koninklijke Philips Electronics N.V. Method of manufacturing an electronic device and a resulting device
WO2005120355A1 (ja) 2004-06-07 2005-12-22 Olympus Corporation 静電容量型超音波トランスデューサ
CN101589543B (zh) 2005-05-18 2012-10-31 科隆科技公司 微机电换能器
US7622848B2 (en) 2006-01-06 2009-11-24 General Electric Company Transducer assembly with z-axis interconnect
RU2009102251A (ru) 2006-06-26 2010-08-10 Конинклейке Филипс Электроникс, Н.В. (Nl) Соединение методом перевернутого кристалла при помощи небольшого отверстия в пассивирующем слое
RU2449418C2 (ru) 2006-09-25 2012-04-27 Конинклейке Филипс Электроникс Н.В. Межсоединение по методу перевернутого кристалла через сквозные отверстия в микросхеме
CN101662989B (zh) * 2006-11-03 2013-10-30 研究三角协会 使用挠曲模式压电换能器的增强的超声成像探头
US8110899B2 (en) * 2006-12-20 2012-02-07 Intel Corporation Method for incorporating existing silicon die into 3D integrated stack
US7843022B2 (en) 2007-10-18 2010-11-30 The Board Of Trustees Of The Leland Stanford Junior University High-temperature electrostatic transducers and fabrication method
US7781238B2 (en) 2007-12-06 2010-08-24 Robert Gideon Wodnicki Methods of making and using integrated and testable sensor array
US8062975B2 (en) * 2009-04-16 2011-11-22 Freescale Semiconductor, Inc. Through substrate vias

Also Published As

Publication number Publication date
RU2603435C2 (ru) 2016-11-27
CN103875068B (zh) 2018-07-10
CN103875068A (zh) 2014-06-18
RU2014119923A (ru) 2015-11-27
WO2013057642A1 (en) 2013-04-25
US9230908B2 (en) 2016-01-05
EP2745315A1 (en) 2014-06-25
US20140293751A1 (en) 2014-10-02

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