JP2016082010A5 - - Google Patents
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- Publication number
- JP2016082010A5 JP2016082010A5 JP2014210316A JP2014210316A JP2016082010A5 JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5 JP 2014210316 A JP2014210316 A JP 2014210316A JP 2014210316 A JP2014210316 A JP 2014210316A JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon nitride
- nitride film
- range
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 150000001282 organosilanes Chemical class 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical class O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014210316A JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014210316A JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016082010A JP2016082010A (ja) | 2016-05-16 |
| JP2016082010A5 true JP2016082010A5 (zh) | 2016-12-08 |
| JP6236709B2 JP6236709B2 (ja) | 2017-11-29 |
Family
ID=55959113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014210316A Active JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6236709B2 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2565221B2 (en) | 2011-08-30 | 2018-08-08 | Borealis AG | Process for the manufacture of a capacitor film |
| EP3428959B1 (en) | 2016-03-11 | 2023-03-01 | Taiyo Nippon Sanso Corporation | Method for producing silicon nitride film, and silicon nitride film |
| JP6616365B2 (ja) * | 2017-09-11 | 2019-12-04 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
| JP6997000B2 (ja) * | 2018-02-14 | 2022-01-17 | Ｓｐｐテクノロジーズ株式会社 | シリコン窒化膜の製造方法及び製造装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100431110C (zh) * | 2000-08-18 | 2008-11-05 | 东京毅力科创株式会社 | 低介电氮化硅膜的形成方法和半导体器件及其制造工艺 |
| EP1592051A4 (en) * | 2003-01-24 | 2012-02-22 | Tokyo Electron Ltd | CHEMICAL VAPOR DEPOSITION METHOD FOR FORMING SILICON NITRIDE FILM ON A SUBSTRATE |
| JP4228150B2 (ja) * | 2005-03-23 | 2009-02-25 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| JP2010103484A (ja) * | 2008-09-29 | 2010-05-06 | Adeka Corp | 半導体デバイス、その製造装置及び製造方法 |
| JP5731841B2 (ja) * | 2011-02-02 | 2015-06-10 | 大陽日酸株式会社 | シリコン窒化膜の形成方法 |
| JP5922352B2 (ja) * | 2011-08-11 | 2016-05-24 | Ｓｐｐテクノロジーズ株式会社 | 窒化膜の製造装置及びその製造方法、並びにその製造プログラム |
| US8592328B2 (en) * | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
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2014
- 2014-10-14 JP JP2014210316A patent/JP6236709B2/ja active Active
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