JP2016082010A5 - - Google Patents

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Publication number
JP2016082010A5
JP2016082010A5 JP2014210316A JP2014210316A JP2016082010A5 JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5 JP 2014210316 A JP2014210316 A JP 2014210316A JP 2014210316 A JP2014210316 A JP 2014210316A JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5
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JP
Japan
Prior art keywords
gas
silicon nitride
nitride film
range
film
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Application number
JP2014210316A
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English (en)
Japanese (ja)
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JP2016082010A (ja
JP6236709B2 (ja
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Priority to JP2014210316A priority Critical patent/JP6236709B2/ja
Priority claimed from JP2014210316A external-priority patent/JP6236709B2/ja
Publication of JP2016082010A publication Critical patent/JP2016082010A/ja
Publication of JP2016082010A5 publication Critical patent/JP2016082010A5/ja
Application granted granted Critical
Publication of JP6236709B2 publication Critical patent/JP6236709B2/ja
Expired - Fee Related legal-status Critical Current
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JP2014210316A 2014-10-14 2014-10-14 シリコン窒化膜の製造方法及びシリコン窒化膜 Expired - Fee Related JP6236709B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014210316A JP6236709B2 (ja) 2014-10-14 2014-10-14 シリコン窒化膜の製造方法及びシリコン窒化膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014210316A JP6236709B2 (ja) 2014-10-14 2014-10-14 シリコン窒化膜の製造方法及びシリコン窒化膜

Publications (3)

Publication Number Publication Date
JP2016082010A JP2016082010A (ja) 2016-05-16
JP2016082010A5 true JP2016082010A5 (cg-RX-API-DMAC10.html) 2016-12-08
JP6236709B2 JP6236709B2 (ja) 2017-11-29

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Family Applications (1)

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JP2014210316A Expired - Fee Related JP6236709B2 (ja) 2014-10-14 2014-10-14 シリコン窒化膜の製造方法及びシリコン窒化膜

Country Status (1)

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JP (1) JP6236709B2 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2565221B2 (en) 2011-08-30 2018-08-08 Borealis AG Process for the manufacture of a capacitor film
EP3428959B1 (en) 2016-03-11 2023-03-01 Taiyo Nippon Sanso Corporation Method for producing silicon nitride film, and silicon nitride film
JP6616365B2 (ja) * 2017-09-11 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
JP6997000B2 (ja) * 2018-02-14 2022-01-17 Ｓｐｐテクノロジーズ株式会社 シリコン窒化膜の製造方法及び製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002017374A1 (en) * 2000-08-18 2002-02-28 Tokyo Electron Limited Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof
KR100771800B1 (ko) * 2003-01-24 2007-10-30 도쿄 엘렉트론 가부시키가이샤 피처리 기판 상에 실리콘 질화막을 형성하는 ｃｖｄ 방법
JP4228150B2 (ja) * 2005-03-23 2009-02-25 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP2010103484A (ja) * 2008-09-29 2010-05-06 Adeka Corp 半導体デバイス、その製造装置及び製造方法
JP5731841B2 (ja) * 2011-02-02 2015-06-10 大陽日酸株式会社 シリコン窒化膜の形成方法
JP5922352B2 (ja) * 2011-08-11 2016-05-24 Ｓｐｐテクノロジーズ株式会社 窒化膜の製造装置及びその製造方法、並びにその製造プログラム
US8592328B2 (en) * 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film

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