JP2016063142A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2016063142A JP2016063142A JP2014191449A JP2014191449A JP2016063142A JP 2016063142 A JP2016063142 A JP 2016063142A JP 2014191449 A JP2014191449 A JP 2014191449A JP 2014191449 A JP2014191449 A JP 2014191449A JP 2016063142 A JP2016063142 A JP 2016063142A
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- Prior art keywords
- impurity diffusion
- diffusion region
- voltage
- photoelectric conversion
- reset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000012535 impurity Substances 0.000 claims abstract description 216
- 238000009792 diffusion process Methods 0.000 claims abstract description 209
- 238000006243 chemical reaction Methods 0.000 claims abstract description 79
- 238000005036 potential barrier Methods 0.000 claims abstract description 35
- 238000001514 detection method Methods 0.000 claims abstract description 27
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 238000005381 potential energy Methods 0.000 claims description 38
- 230000003321 amplification Effects 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 42
- 238000000034 method Methods 0.000 description 21
- 101100041125 Arabidopsis thaliana RST1 gene Proteins 0.000 description 13
- 101100443250 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG1 gene Proteins 0.000 description 13
- 101100443251 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG2 gene Proteins 0.000 description 11
- 101100041128 Schizosaccharomyces pombe (strain 972 / ATCC 24843) rst2 gene Proteins 0.000 description 11
- 230000002596 correlated effect Effects 0.000 description 9
- 238000005070 sampling Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
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- 238000003384 imaging method Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 101000739577 Homo sapiens Selenocysteine-specific elongation factor Proteins 0.000 description 2
- 102100037498 Selenocysteine-specific elongation factor Human genes 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000012466 permeate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014191449A JP2016063142A (ja) | 2014-09-19 | 2014-09-19 | 半導体装置 |
| CN201510530580.XA CN105448941A (zh) | 2014-09-19 | 2015-08-26 | 半导体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014191449A JP2016063142A (ja) | 2014-09-19 | 2014-09-19 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2016063142A true JP2016063142A (ja) | 2016-04-25 |
Family
ID=55558952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014191449A Pending JP2016063142A (ja) | 2014-09-19 | 2014-09-19 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2016063142A (zh) |
| CN (1) | CN105448941A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020059553A1 (ja) * | 2018-09-20 | 2020-03-26 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| US11516418B2 (en) | 2018-10-23 | 2022-11-29 | Sony Semiconductor Solutions Corporation | Solid-state imaging apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109429559B (zh) * | 2017-07-05 | 2022-06-03 | 松下知识产权经营株式会社 | 摄像装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005268479A (ja) * | 2004-03-18 | 2005-09-29 | Fuji Film Microdevices Co Ltd | 光電変換膜積層型固体撮像装置 |
| CN103703759B (zh) * | 2011-08-08 | 2017-03-29 | 松下知识产权经营株式会社 | 固体摄像装置及固体摄像装置的驱动方法 |
| KR101389790B1 (ko) * | 2012-05-24 | 2014-04-29 | 한양대학교 산학협력단 | 이미지 센서 및 그 구동 방법 |
-
2014
- 2014-09-19 JP JP2014191449A patent/JP2016063142A/ja active Pending
-
2015
- 2015-08-26 CN CN201510530580.XA patent/CN105448941A/zh active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020059553A1 (ja) * | 2018-09-20 | 2020-03-26 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| US11516418B2 (en) | 2018-10-23 | 2022-11-29 | Sony Semiconductor Solutions Corporation | Solid-state imaging apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105448941A (zh) | 2016-03-30 |
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