JP2016058676A - 半導体装置の製造方法、基板処理装置およびプログラム - Google Patents

半導体装置の製造方法、基板処理装置およびプログラム Download PDF

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Publication number
JP2016058676A
JP2016058676A JP2014186029A JP2014186029A JP2016058676A JP 2016058676 A JP2016058676 A JP 2016058676A JP 2014186029 A JP2014186029 A JP 2014186029A JP 2014186029 A JP2014186029 A JP 2014186029A JP 2016058676 A JP2016058676 A JP 2016058676A
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JP
Japan
Prior art keywords
gas
supplying
processing
substrate
processing gas
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Pending
Application number
JP2014186029A
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English (en)
Japanese (ja)
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JP2016058676A5 (https=
Inventor
小川　有人
Arito Ogawa
有人 小川
竹林　雄二
Yuji Takebayashi
雄二 竹林
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
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Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2014186029A priority Critical patent/JP2016058676A/ja
Priority to CN201510501921.0A priority patent/CN105428227A/zh
Priority to KR1020150123493A priority patent/KR101737215B1/ko
Priority to US14/841,764 priority patent/US20160079070A1/en
Publication of JP2016058676A publication Critical patent/JP2016058676A/ja
Publication of JP2016058676A5 publication Critical patent/JP2016058676A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP2014186029A 2014-09-12 2014-09-12 半導体装置の製造方法、基板処理装置およびプログラム Pending JP2016058676A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014186029A JP2016058676A (ja) 2014-09-12 2014-09-12 半導体装置の製造方法、基板処理装置およびプログラム
CN201510501921.0A CN105428227A (zh) 2014-09-12 2015-08-14 半导体器件的制造方法及衬底处理装置
KR1020150123493A KR101737215B1 (ko) 2014-09-12 2015-09-01 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US14/841,764 US20160079070A1 (en) 2014-09-12 2015-09-01 Method of manufacturing semiconductor device and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014186029A JP2016058676A (ja) 2014-09-12 2014-09-12 半導体装置の製造方法、基板処理装置およびプログラム

Publications (2)

Publication Number Publication Date
JP2016058676A true JP2016058676A (ja) 2016-04-21
JP2016058676A5 JP2016058676A5 (https=) 2017-03-16

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JP2014186029A Pending JP2016058676A (ja) 2014-09-12 2014-09-12 半導体装置の製造方法、基板処理装置およびプログラム

Country Status (4)

Country Link
US (1) US20160079070A1 (https=)
JP (1) JP2016058676A (https=)
KR (1) KR101737215B1 (https=)
CN (1) CN105428227A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021060047A1 (ja) * 2019-09-25 2021-04-01 東京エレクトロン株式会社 半導体装置の製造方法及び成膜装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2014125653A1 (ja) * 2013-02-15 2017-02-02 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP6604801B2 (ja) 2015-09-29 2019-11-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102472052B1 (ko) * 2016-03-29 2022-11-29 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
KR102376835B1 (ko) 2017-09-25 2022-03-21 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
JP2020026571A (ja) * 2018-08-17 2020-02-20 東京エレクトロン株式会社 成膜方法及び成膜装置
US11587791B2 (en) 2018-10-23 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon intermixing layer for blocking diffusion
JP6826173B2 (ja) * 2019-09-17 2021-02-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7166367B2 (ja) * 2021-01-14 2022-11-07 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム

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JP2004176081A (ja) * 2002-11-25 2004-06-24 Matsushita Electric Works Ltd 原子層堆積法による光学多層膜の製造方法
US20070123060A1 (en) * 2005-11-16 2007-05-31 Rahtu Antti H Method for the deposition of a film by CVD or ALD
US20080113096A1 (en) * 2006-11-14 2008-05-15 Maitreyee Mahajani Method of depositing catalyst assisted silicates of high-k materials
US20080113097A1 (en) * 2006-11-14 2008-05-15 Maitreyee Mahajani LOW TEMPERATURE ALD SiO2
JP2010153776A (ja) * 2008-10-29 2010-07-08 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
JP2012114223A (ja) * 2010-11-24 2012-06-14 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
JP2014063860A (ja) * 2012-09-20 2014-04-10 Hitachi Kokusai Electric Inc クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム

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US5595784A (en) * 1995-08-01 1997-01-21 Kaim; Robert Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
JP5683388B2 (ja) * 2010-08-19 2015-03-11 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004176081A (ja) * 2002-11-25 2004-06-24 Matsushita Electric Works Ltd 原子層堆積法による光学多層膜の製造方法
US20070123060A1 (en) * 2005-11-16 2007-05-31 Rahtu Antti H Method for the deposition of a film by CVD or ALD
JP2007142415A (ja) * 2005-11-16 2007-06-07 Asm Internatl Nv Ｃｖｄ又はａｌｄによる膜の堆積のための方法
US20080113096A1 (en) * 2006-11-14 2008-05-15 Maitreyee Mahajani Method of depositing catalyst assisted silicates of high-k materials
US20080113097A1 (en) * 2006-11-14 2008-05-15 Maitreyee Mahajani LOW TEMPERATURE ALD SiO2
JP2008141191A (ja) * 2006-11-14 2008-06-19 Applied Materials Inc 低温ＡＬＤＳｉＯ２
JP2008142702A (ja) * 2006-11-14 2008-06-26 Applied Materials Inc 高−ｋ材料の触媒補助ケイ酸塩の堆積方法
JP2010153776A (ja) * 2008-10-29 2010-07-08 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
US20140318451A1 (en) * 2008-10-29 2014-10-30 Hitachi Kokusai Electric Inc. Substrate processing apparatus
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JP2014063860A (ja) * 2012-09-20 2014-04-10 Hitachi Kokusai Electric Inc クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021060047A1 (ja) * 2019-09-25 2021-04-01 東京エレクトロン株式会社 半導体装置の製造方法及び成膜装置

Also Published As

Publication number Publication date
KR101737215B1 (ko) 2017-05-17
KR20160031413A (ko) 2016-03-22
US20160079070A1 (en) 2016-03-17
CN105428227A (zh) 2016-03-23

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