JP2016058676A - 半導体装置の製造方法、基板処理装置およびプログラム - Google Patents

半導体装置の製造方法、基板処理装置およびプログラム Download PDF

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Publication number
JP2016058676A
JP2016058676A JP2014186029A JP2014186029A JP2016058676A JP 2016058676 A JP2016058676 A JP 2016058676A JP 2014186029 A JP2014186029 A JP 2014186029A JP 2014186029 A JP2014186029 A JP 2014186029A JP 2016058676 A JP2016058676 A JP 2016058676A
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Japan
Prior art keywords
gas
supplying
processing
substrate
processing gas
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Pending
Application number
JP2014186029A
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English (en)
Japanese (ja)
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JP2016058676A5 (enExample
Inventor
小川　有人
Arito Ogawa
有人 小川
竹林　雄二
Yuji Takebayashi
雄二 竹林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2014186029A priority Critical patent/JP2016058676A/ja
Priority to CN201510501921.0A priority patent/CN105428227A/zh
Priority to US14/841,764 priority patent/US20160079070A1/en
Priority to KR1020150123493A priority patent/KR101737215B1/ko
Publication of JP2016058676A publication Critical patent/JP2016058676A/ja
Publication of JP2016058676A5 publication Critical patent/JP2016058676A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP2014186029A 2014-09-12 2014-09-12 半導体装置の製造方法、基板処理装置およびプログラム Pending JP2016058676A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014186029A JP2016058676A (ja) 2014-09-12 2014-09-12 半導体装置の製造方法、基板処理装置およびプログラム
CN201510501921.0A CN105428227A (zh) 2014-09-12 2015-08-14 半导体器件的制造方法及衬底处理装置
US14/841,764 US20160079070A1 (en) 2014-09-12 2015-09-01 Method of manufacturing semiconductor device and substrate processing apparatus
KR1020150123493A KR101737215B1 (ko) 2014-09-12 2015-09-01 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014186029A JP2016058676A (ja) 2014-09-12 2014-09-12 半導体装置の製造方法、基板処理装置およびプログラム

Publications (2)

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JP2016058676A true JP2016058676A (ja) 2016-04-21
JP2016058676A5 JP2016058676A5 (enExample) 2017-03-16

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JP2014186029A Pending JP2016058676A (ja) 2014-09-12 2014-09-12 半導体装置の製造方法、基板処理装置およびプログラム

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Country Link
US (1) US20160079070A1 (enExample)
JP (1) JP2016058676A (enExample)
KR (1) KR101737215B1 (enExample)
CN (1) CN105428227A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021060047A1 (ja) * 2019-09-25 2021-04-01 東京エレクトロン株式会社 半導体装置の製造方法及び成膜装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2014125653A1 (ja) * 2013-02-15 2017-02-02 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP6604801B2 (ja) 2015-09-29 2019-11-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR20220165790A (ko) 2016-03-29 2022-12-15 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
JP7036832B2 (ja) * 2017-09-25 2022-03-15 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
JP2020026571A (ja) * 2018-08-17 2020-02-20 東京エレクトロン株式会社 成膜方法及び成膜装置
US11587791B2 (en) 2018-10-23 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon intermixing layer for blocking diffusion
JP6826173B2 (ja) * 2019-09-17 2021-02-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7166367B2 (ja) * 2021-01-14 2022-11-07 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム

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JP2004176081A (ja) * 2002-11-25 2004-06-24 Matsushita Electric Works Ltd 原子層堆積法による光学多層膜の製造方法
US20070123060A1 (en) * 2005-11-16 2007-05-31 Rahtu Antti H Method for the deposition of a film by CVD or ALD
US20080113096A1 (en) * 2006-11-14 2008-05-15 Maitreyee Mahajani Method of depositing catalyst assisted silicates of high-k materials
US20080113097A1 (en) * 2006-11-14 2008-05-15 Maitreyee Mahajani LOW TEMPERATURE ALD SiO2
JP2010153776A (ja) * 2008-10-29 2010-07-08 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
JP2012114223A (ja) * 2010-11-24 2012-06-14 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
JP2014063860A (ja) * 2012-09-20 2014-04-10 Hitachi Kokusai Electric Inc クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム

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US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
JP5683388B2 (ja) * 2010-08-19 2015-03-11 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置

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Publication number Priority date Publication date Assignee Title
JP2004176081A (ja) * 2002-11-25 2004-06-24 Matsushita Electric Works Ltd 原子層堆積法による光学多層膜の製造方法
US20070123060A1 (en) * 2005-11-16 2007-05-31 Rahtu Antti H Method for the deposition of a film by CVD or ALD
JP2007142415A (ja) * 2005-11-16 2007-06-07 Asm Internatl Nv Ｃｖｄ又はａｌｄによる膜の堆積のための方法
US20080113096A1 (en) * 2006-11-14 2008-05-15 Maitreyee Mahajani Method of depositing catalyst assisted silicates of high-k materials
US20080113097A1 (en) * 2006-11-14 2008-05-15 Maitreyee Mahajani LOW TEMPERATURE ALD SiO2
JP2008141191A (ja) * 2006-11-14 2008-06-19 Applied Materials Inc 低温ＡＬＤＳｉＯ２
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JP2010153776A (ja) * 2008-10-29 2010-07-08 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
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JP2012114223A (ja) * 2010-11-24 2012-06-14 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
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JP2014063860A (ja) * 2012-09-20 2014-04-10 Hitachi Kokusai Electric Inc クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021060047A1 (ja) * 2019-09-25 2021-04-01 東京エレクトロン株式会社 半導体装置の製造方法及び成膜装置

Also Published As

Publication number Publication date
KR20160031413A (ko) 2016-03-22
KR101737215B1 (ko) 2017-05-17
CN105428227A (zh) 2016-03-23
US20160079070A1 (en) 2016-03-17

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