JP2016047786A - 結晶材料およびその製造方法 - Google Patents
結晶材料およびその製造方法 Download PDFInfo
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- JP2016047786A JP2016047786A JP2014173209A JP2014173209A JP2016047786A JP 2016047786 A JP2016047786 A JP 2016047786A JP 2014173209 A JP2014173209 A JP 2014173209A JP 2014173209 A JP2014173209 A JP 2014173209A JP 2016047786 A JP2016047786 A JP 2016047786A
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- oxide
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- langasite
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000013078 crystal Substances 0.000 title abstract description 53
- 239000000463 material Substances 0.000 title abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 50
- 239000002994 raw material Substances 0.000 claims abstract description 30
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 14
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 12
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims description 14
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 12
- 239000002178 crystalline material Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 abstract description 12
- 150000001768 cations Chemical class 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- 239000011575 calcium Substances 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910000629 Rh alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- -1 alkaline earth metal carbonate Chemical class 0.000 description 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】第1工程S101で、アルカリ土類金属の炭酸塩または酸化物、NbまたはTaの酸化物、Gaの酸化物,Alの酸化物,およびSiの酸化物を混合して混合原料とする。所望とするコングルエント組成で示される陽イオン比となる状態に、各材料を混合する。第2工程S102で、混合原料を溶融する。次に、第3工程S103で、溶融した混合原料を冷却することで、所望とするコングルエント組成のランガサイト型酸化物からなる結晶材料を形成する。
【選択図】 図1
Description
Claims (3)
- AE3+yME1+y(Ga1-xAlx)3+ySi2-yO14、AE3+yME1+y(Ga1-xAlx)3-ySi2+yO14、AE3+yME1-y(Ga1-xAlx)3+ySi2+yO14、AE3+yME1+y(Ga1-xAlx)3-ySi2-yO14、AE3+yME1-y(Ga1-xAlx)3-ySi2+yO14、AE3+yME1-y(Ga1-xAlx)3+ySi2-yO14、AE3+yME1-y(Ga1-xAlx)3-ySi2-yO14、AE3-yME1+y(Ga1-xAlx)3+ySi2+yO14、AE3-yME1-y(Ga1-xAlx)3+ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3-ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3+ySi2-yO14、AE3-yME1-y(Ga1-xAlx)3-ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3-ySi2-yO14、AE3-yME1-y(Ga1-xAlx)3+ySi2-yO14(AEはアルカリ土類金属、MEはNbまたはTa、0≦x≦1、0<y<0.5)のいずれかの組成とされたランガサイト型構造の酸化物から構成されていることを特徴とする結晶材料。
- AE3+yME1+y(Ga1-xAlx)3+ySi2-yO14、AE3+yME1+y(Ga1-xAlx)3-ySi2+yO14、AE3+yME1-y(Ga1-xAlx)3+ySi2+yO14、AE3+yME1+y(Ga1-xAlx)3-ySi2-yO14、AE3+yME1-y(Ga1-xAlx)3-ySi2+yO14、AE3+yME1-y(Ga1-xAlx)3+ySi2-yO14、AE3+yME1-y(Ga1-xAlx)3-ySi2-yO14、AE3-yME1+y(Ga1-xAlx)3+ySi2+yO14、AE3-yME1-y(Ga1-xAlx)3+ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3-ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3+ySi2-yO14、AE3-yME1-y(Ga1-xAlx)3-ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3-ySi2-yO14、AE3-yME1-y(Ga1-xAlx)3+ySi2-yO14(AEはアルカリ土類金属、MEはNbまたはTa、0≦x≦1、0<y<0.5)のいずれかの所望とする組成で示される各陽イオンの比となる状態に、アルカリ土類金属またはそれを含む化合物、NbまたはTaまたはそれらを含む化合物、Gaまたはそれらを含む化合物,Alまたはそれらを含む化合物,およびSiまたはそれらを含む化合物を混合して混合原料とする第1工程と、
前記混合原料を溶融する第2工程と、
溶融した前記混合原料を冷却することで、所望とする前記組成のランガサイト型酸化物からなる結晶材料を形成する第3工程と
を備えることを特徴とする結晶材料の製造方法。 - 請求項2記載の結晶材料の製造方法によって作製されたランガサイト型酸化物からなる結晶材料であって、
AE3+yME1+y(Ga1-xAlx)3+ySi2-yO14、AE3+yME1+y(Ga1-xAlx)3-ySi2+yO14、AE3+yME1-y(Ga1-xAlx)3+ySi2+yO14、AE3+yME1+y(Ga1-xAlx)3-ySi2-yO14、AE3+yME1-y(Ga1-xAlx)3-ySi2+yO14、AE3+yME1-y(Ga1-xAlx)3+ySi2-yO14、AE3+yME1-y(Ga1-xAlx)3-ySi2-yO14、AE3-yME1+y(Ga1-xAlx)3+ySi2+yO14、AE3-yME1-y(Ga1-xAlx)3+ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3-ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3+ySi2-yO14、AE3-yME1-y(Ga1-xAlx)3-ySi2+yO14、AE3-yME1+y(Ga1-xAlx)3-ySi2-yO14、AE3-yME1-y(Ga1-xAlx)3+ySi2-yO14(AEはアルカリ土類金属、MEはNbまたはTa、0≦x≦1、0<y<0.5)のいずれかの組成とされたランガサイト型構造の酸化物から構成されていることを特徴とする結晶材料。
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Cited By (2)
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WO2017146244A1 (ja) * | 2016-02-25 | 2017-08-31 | 株式会社C&A | 結晶材料およびその製造方法 |
US10700261B2 (en) * | 2015-07-08 | 2020-06-30 | National Institute For Materials Science | Piezoelectric material, method for producing the same, piezoelectric element and combustion pressure sensor |
Citations (2)
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WO2012049846A1 (ja) * | 2010-10-13 | 2012-04-19 | Tdk株式会社 | ランガサイト型酸化物材料、その製造方法、及び該製造方法で用いられる原材料 |
JP2014093627A (ja) * | 2012-11-02 | 2014-05-19 | Kyocera Crystal Device Corp | 圧電振動子 |
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WO2012049846A1 (ja) * | 2010-10-13 | 2012-04-19 | Tdk株式会社 | ランガサイト型酸化物材料、その製造方法、及び該製造方法で用いられる原材料 |
JP2014093627A (ja) * | 2012-11-02 | 2014-05-19 | Kyocera Crystal Device Corp | 圧電振動子 |
Non-Patent Citations (1)
Title |
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YOKOTA YUUI, ET AL.: "Growth of columnar and plate-shaped langasite-type piezoelectric single crystals and their piezoelec", THE INTERNATIONAL WORKSHOP ON PIEZOELECTRIC MATERIALS AND APPLICATIONS(IWPMA)2012, vol. スライド3-30, JPN6018015146, 23 April 2012 (2012-04-23), ISSN: 0003791588 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10700261B2 (en) * | 2015-07-08 | 2020-06-30 | National Institute For Materials Science | Piezoelectric material, method for producing the same, piezoelectric element and combustion pressure sensor |
WO2017146244A1 (ja) * | 2016-02-25 | 2017-08-31 | 株式会社C&A | 結晶材料およびその製造方法 |
JPWO2017146244A1 (ja) * | 2016-02-25 | 2019-01-10 | 株式会社Piezo Studio | 結晶材料およびその製造方法 |
US11158784B2 (en) | 2016-02-25 | 2021-10-26 | Piezo Studio Inc. | Crystal material and method of manufacturing the same |
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