JP2016042536A - Semiconductor device and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses occurrence of dielectric breakdown around a conductor, and a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device 1 comprises: a substrate 2; an adhesion layer 3 formed on the substrate 2; and an organic insulation layer 4 formed on the adhesion layer 3. Wirings 5A, 5B, a plurality of wirings 6, a via 7, a land 8 and a plurality of inorganic insulation films 9 are provided inside the organic insulation layer 4. Inorganic insulation films 9 are arranged between the organic insulation layer 4 and at least a side of a plurality of wirings 6, the via 7 and the land 8.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.

  With the demand for downsizing and high performance of electronic devices, downsizing and high performance of semiconductor chips are required. In addition, miniaturization of a circuit board on which a semiconductor chip is mounted is required. A semi-additive method and a dual damascene method are known as methods for forming wirings included in a semiconductor chip and a circuit board.

JP 2001-284453 A International Publication No. 2004/107434

  With the demand for miniaturization and high performance of semiconductor chips, semiconductor chips are miniaturized and the distance between wirings is narrowed. In addition, with the demand for miniaturization of a circuit board on which a semiconductor chip is mounted, the circuit board is miniaturized and the distance between wirings is narrowed. For example, in a fine wiring with L / S (line / space) = 2/2 μm or less, a high current is applied to enable high-speed transmission. However, when a high current is applied, dielectric breakdown may occur between adjacent wirings. For this reason, there is a concern that short-circuit defects between adjacent wirings may occur. Generation of dielectric breakdown is suppressed by expanding the space between adjacent wires or increasing the cross-sectional area of the wires in order to reduce the current density. When expanding the space between adjacent wires or increasing the cross-sectional area of the wires in order to reduce the current density, there is a problem that it is not possible to cope with the narrow pitch of the wires.

  The purpose of this case is to provide a technique for suppressing the occurrence of dielectric breakdown around a conductor.

  A semiconductor device according to one aspect of the present invention is disposed between a substrate, an organic insulating layer formed on the substrate, a conductor provided inside the organic insulating layer, and the organic insulating layer and the conductor. And an inorganic insulating film covering at least a side surface of the conductor.

  According to this case, the occurrence of dielectric breakdown around the conductor can be suppressed.

FIG. 1 is a cross-sectional view of the semiconductor device according to the first embodiment. FIG. 2 is a cross-sectional view of the semiconductor device according to the first embodiment. FIG. 3 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the first embodiment. FIG. 4 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the first embodiment. FIG. 5 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the first embodiment. FIG. 6 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the first embodiment. FIG. 7 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the first embodiment. FIG. 8 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the first embodiment. FIG. 9 is a cross-sectional view of the test body according to Example 1. FIG. 10 is a diagram showing the results of measuring the resistance change rate of the wirings of the first to third test bodies. FIG. 11 is a cross-sectional view of the semiconductor device according to the second embodiment. FIG. 12 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second embodiment. FIG. 13 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second embodiment. FIG. 14 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second embodiment. FIG. 15 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second embodiment. FIG. 16 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second embodiment. FIG. 17 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the third embodiment. FIG. 18 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the third embodiment. FIG. 19 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the fourth embodiment. FIG. 20 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the fourth embodiment. FIG. 21 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the fourth embodiment. FIG. 22 is a cross-sectional view of the semiconductor device according to the fifth embodiment. FIG. 23 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the fifth embodiment. FIG. 24 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the fifth embodiment. FIG. 25 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the fifth embodiment. FIG. 26 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the first modification of the fifth embodiment. FIG. 27 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second modification of the fifth embodiment. FIG. 28 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second modification of the fifth embodiment. FIG. 29 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second modification of the fifth embodiment. FIG. 30 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the second modification of the fifth embodiment. FIG. 31 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the third modification of the fifth embodiment. FIG. 32 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the third modification of the fifth embodiment. FIG. 33 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the third modification of the fifth embodiment. FIG. 34 is a cross-sectional view of the semiconductor device according to the sixth embodiment. FIG. 35 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the sixth embodiment. FIG. 36 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the sixth embodiment. FIG. 37 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the sixth embodiment. FIG. 38 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the sixth embodiment. FIG. 39 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the sixth embodiment. FIG. 40 is a cross-sectional view of the semiconductor device according to the seventh embodiment. FIG. 41 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the seventh embodiment. FIG. 42 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the seventh embodiment. FIG. 43 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the seventh embodiment. FIG. 44 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device according to the seventh embodiment.

  Hereinafter, a semiconductor device and a method for manufacturing the semiconductor device according to the embodiment will be described with reference to the drawings. The configuration of the following example is an exemplification, and the semiconductor device and the manufacturing method of the semiconductor device according to the embodiment are not limited to the configuration of the example. In the semiconductor device and the method for manufacturing the semiconductor device according to the embodiment, a specific configuration according to the example may be appropriately adopted.

<Example 1>
A semiconductor device 1 according to the first embodiment will be described. FIG. 1 is a cross-sectional view of the semiconductor device 1 according to the first embodiment. The semiconductor device 1 is a circuit board (interposer) on which a semiconductor chip (semiconductor element) such as LSI (Large Scale Integration) is mounted. The semiconductor device 1 includes a substrate 2, an adhesion layer 3, an organic insulating layer 4, wirings 5 </ b> A and 5 </ b> B, a plurality of wirings 6, vias 7, lands 8, and a plurality of inorganic insulating films 9. An adhesion layer 3 is formed on the substrate 2, and an organic insulating layer 4 is formed on the adhesion layer 3. For example, the external terminals of the semiconductor chip are provided on the lands 8, and the external terminals of the semiconductor chip and the lands 8 are joined via solder balls. In the organic insulating layer 4, wirings 5A and 5B, a plurality of wirings 6, vias 7, lands 8 and a plurality of inorganic insulating films 9 are provided. Wirings 5 </ b> A and 5 </ b> B are formed on the adhesion layer 3. Note that the organic insulating layer 4 and the wirings 5 </ b> A and 5 </ b> B may be formed on the substrate 2 by omitting the formation of the adhesion layer 3. The wiring 6, the via 7, and the land 8 are examples of conductors.

  An inorganic insulating film 9 is disposed between the organic insulating layer 4 and each wiring 6. The inorganic insulating film 9 covers the side surface and the lower surface of each wiring 6. A via 7 is formed on the wiring 5 </ b> B, and a land 8 is formed on the via 7. An inorganic insulating film 9 is disposed between the organic insulating layer 4 and the vias 7 and lands 8. The inorganic insulating film 9 covers the side surface of the via 7 and the side surface and the lower surface of the land 8.

The substrate 2 is, for example, a glass substrate or a silicon substrate. The adhesion layer 3 is made of, for example, a polyimide resin. The organic insulating layer 4 is made of, for example, a photosensitive phenol resin. The organic insulating layer 4 may be formed of, for example, polyimide resin, BCB (Benzocyclobutene), epoxy resin, epoxy acrylate, PBO (Polybenzooxazole), or the like. The wirings 5A, 5B, the plurality of wirings 6, the vias 7, and the lands 8 are made of, for example, Cu (copper). By disposing the adhesion layer 3 between the substrate 2 and the wirings 5A and 5B, the adhesion between the substrate 2 and the wirings 5A and 5B is improved. The inorganic insulating film 9 is, for example, an inorganic oxide film such as SiO ₂ , Al ₂ O ₃ , Ta ₂ O ₅ , Co ₃ O ₄ , or WO ₃ , an inorganic nitride film such as SiN or AlN, SiC, or TiC.
, W ₂ C and other inorganic carbonized films.

  FIG. 2 is a cross-sectional view of the semiconductor device 1 according to the first embodiment. A semiconductor device 1 shown in FIG. 2 includes a substrate 2, an adhesion layer 3, an organic insulating layer 4, wirings 5A and 5B, a plurality of wirings 6, vias 7, lands 8 and a plurality of inorganic insulating films 9. A barrier film 10 is provided. The barrier film 10 is made of, for example, Ti (titanium), Ta (tantalum), TiN, TaN, or the like. An adhesion layer 3 is formed on the substrate 2, and an organic insulating layer 4 is formed on the adhesion layer 3. In the organic insulating layer 4, wirings 5A and 5B, a plurality of wirings 6, vias 7, lands 8, a plurality of inorganic insulating films 9 and a plurality of barrier films 10 are provided. Wirings 5 </ b> A and 5 </ b> B are formed on the adhesion layer 3. Note that the organic insulating layer 4 and the wirings 5 </ b> A and 5 </ b> B may be formed on the substrate 2 by omitting the formation of the adhesion layer 3.

  An inorganic insulating film 9 and a barrier film 10 are disposed between the organic insulating layer 4 and each wiring 6, and a barrier film 10 is disposed between each wiring 6 and each inorganic insulating film 9. Each inorganic insulating film 9 and each barrier film 10 cover the side surface and the lower surface of each wiring 6. An inorganic insulating film 9 and a barrier film 10 are disposed between the organic insulating layer 4 and the via 7 and the land 8, and a barrier film 10 is disposed between the via 7 and the land 8 and the inorganic insulating film 9. The inorganic insulating film 9 and the barrier film 10 cover the side surface of the via 7 and the side surface and the lower surface of the land 8. The barrier film 10 prevents Cu that is a constituent atom of the wiring 6, the via 7, and the land 8 from diffusing into the organic insulating layer 4 and the inorganic insulating film 9.

  Since the inorganic insulating film 9 covers the periphery of each wiring 6, the dielectric constant of the insulator including the organic insulating layer 4 disposed around each wiring 6 is lowered. As a result, when a high current is applied, dielectric breakdown around each wiring 6 is suppressed, and a short circuit failure between each wiring 6 is suppressed. When the inorganic insulating film 9 covers the periphery of the via 7 and the land 8, the dielectric constant of the insulator including the organic insulating layer 4 disposed around the via 7 and the land 8 is lowered. As a result, when a high current is applied, dielectric breakdown around the via 7 and the land 8 is suppressed, and a short circuit failure between each wiring 6 and the via 7 and the land 8 is suppressed. Thereby, the reliability of the wiring structure of the semiconductor device 1 can be improved, and the reliability of the semiconductor device 1 when a high current is applied is improved.

  The inorganic insulating film 9 is excellent in heat resistance. It can withstand the temperature rise of each wiring 6, via 7 and land 8 due to a high current flowing through each wiring 6, via 7 and land 8. Therefore, even when a high current flows through each wiring 6, via 7, and land 8, dielectric breakdown around each wiring 6, via 7, and land 8 is suppressed. In addition, since the heat of each wiring 6, via 7, and land 8 is transmitted to the inorganic insulating film 9, oxidation of the outer peripheral portion of each wiring 6, via 7, and land 8 can be suppressed.

<Method for Manufacturing Semiconductor Device 1 According to Example 1>
A method for manufacturing the semiconductor device 1 according to the first embodiment will be described. A method for manufacturing the semiconductor device 1 shown in FIG. 1 will be described with reference to FIGS. 3-7 is sectional drawing which shows an example of the manufacturing process of the semiconductor device 1 which concerns on Example 1. FIG. First, as shown in FIG. 3, after preparing the substrate 2, the adhesion layer 3 is formed on the substrate 2. The adhesion layer 3 is made of, for example, a polyimide resin. The thickness of the adhesion layer 3 is, for example, 1 μm or more and 5 μm or less. Next, as shown in FIG. 3, wirings 5 </ b> A and 5 </ b> B are formed apart from each other on the adhesion layer 3. The width of the wirings 5A and 5B is, for example, about 90 μm. Note that the wirings 5 </ b> A and 5 </ b> B may be formed on the substrate 2 by omitting the formation of the adhesion layer 3.

The wirings 5A and 5B may be formed by the following method, for example. A resist film having a thickness of 2 μm is formed on the substrate 2. By exposing and developing the resist film, wiring 5A, 5B
A resist pattern having an opening in a region in which is formed is formed. After performing copper plating and CMP (Chemical Mechanical Polishing), the resist pattern is peeled off,
Wirings 5A and 5B are formed.

Next, as shown in FIG. 4, an organic insulating layer 4 </ b> A is formed on the substrate 2. For example, the organic insulating layer 4A may be formed by the following method. First, a photosensitive phenol resin is stuck on the substrate 2. As the photosensitive phenol resin, a dry film in which the exposed portion is cured is used. The thickness of the photosensitive phenol resin is, for example, 10 μm or more and 20 μm or less. Next, the photosensitive phenol resin is exposed using an exposure mask in which vias having a diameter of 40 μm are patterned, and the photosensitive phenol resin is developed using a developer to form the organic insulating layer 4A. The developer is, for example, TMAH (Tetramethylammonium hydroxide)
It is. The organic insulating layer 4A has a groove 11 in which a part of the wiring 5B is exposed.

  Next, as shown in FIG. 5, the organic insulating layer 4 </ b> B is formed on the organic insulating layer 4 </ b> A, thereby forming the organic insulating layer 4 on the substrate 2. The organic insulating layer 4B may be formed by the following method, for example. First, a photosensitive phenol resin is pasted on the organic insulating layer 4A. The thickness of the photosensitive phenol resin is, for example, 4 μm or more and 10 μm or less. Next, the photosensitive phenol resin is exposed using an exposure mask in which L / S = 2/2 μm wiring and a land having a diameter of 90 μm are patterned, and the photosensitive phenol resin is developed using a developer. Then, the organic insulating layer 4B is formed. The developer is, for example, TMAH.

  The organic insulating layer 4 has a plurality of grooves 12. The organic insulating layer 4B has a groove 13 connected to the groove 11 of the organic insulating layer 4A. The diameter of the groove 11 of the organic insulating layer 4A is about 40 μm, and the diameter of the groove 13 of the organic insulating layer 4B is about 90 μm. Therefore, the organic insulating layer 4 has a step-like groove 14 reaching the wiring 5B.

Next, as shown in FIG. 6, for example, the inorganic insulating film 9 is formed on the organic insulating layer 4 by CVD (Chemical Vapor Deposition), and the inorganic insulating film 9 is formed on the wiring 5B. The inorganic insulating film 9 is formed on the side and bottom surfaces of the groove 12 of the organic insulating layer 4 and the side and bottom surfaces of the groove 14 of the organic insulating layer 4. The thickness of the inorganic insulating film 9 is, for example, not less than 100 nm and not more than 300 nm.

  Next, as shown in FIG. 7, after applying a photosensitive resist on the inorganic insulating film 9, the photosensitive resist is exposed using an exposure mask, and the photosensitive resist is developed using a developer. Then, a resist pattern 15 is formed on the inorganic insulating film 9. The developer is, for example, TMAH. The resist pattern 15 has an opening through which the inorganic insulating film 9 formed on the bottom surface of the groove 14 of the organic insulating layer 4 is exposed.

  Next, as shown in FIG. 7, the inorganic insulating film 9 formed on the bottom surface of the groove 14 of the organic insulating layer 4 is removed by performing anisotropic etching using the resist pattern 15 as a mask. That is, the inorganic insulating film 9 formed on the wiring 5B is removed. Thereby, a part of the wiring 5 </ b> B is exposed in the groove 14 of the organic insulating layer 4. Next, the resist pattern 15 is removed using a stripping solution. The stripping solution is, for example, NMP (N-Methyl-2-pyrrolidone).

Next, a Cu seed layer is formed on the wiring 5B and the inorganic insulating film 9 using a sputtering apparatus. The thickness of the Cu seed layer is, for example, not less than 100 nm and not more than 250 nm. Next, a Cu layer is formed on the Cu seed layer by, for example, electrolytic plating. The electroplating method is performed at a current density of about 4 A / cm ² , for example. Thereby, the Cu seed layer and the Cu layer are embedded in each groove 12 and groove 14 of the organic insulating layer 4.

  Next, the semiconductor device 1 shown in FIG. 1 is manufactured by polishing the Cu layer, the Cu seed layer, and the inorganic insulating film 9 by, for example, CMP until the surface of the organic insulating layer 4 is exposed. By leaving the Cu layer and the Cu seed layer in each groove 12 of the organic insulating layer 4, the wiring 6 is formed in each groove 12 of the organic insulating layer 4. The height of the wiring 6 is, for example, about 2 μm. By leaving the Cu layer and the Cu seed layer in the groove 14 of the organic insulating layer 4, the via 7 and the land 8 are formed in the groove 14 of the organic insulating layer 4. Since the inorganic insulating film 9 on the wiring 5B is removed, the wiring 5B and the via 7 are electrically connected.

  With reference to FIG. 8, a method of manufacturing the semiconductor device 1 shown in FIG. 2 will be described. FIG. 8 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device 1 according to the first embodiment. The process shown in FIG. 8 is performed after the processes shown in FIGS. That is, after performing the process of removing the resist pattern 15, as shown in FIG. 8, the barrier film 10 is formed on the wiring 5B and the inorganic insulating film 9 using a sputtering apparatus. The barrier film 10 is formed on the exposed surface of the inorganic insulating film 9 in the groove 12 of the organic insulating layer 4. Therefore, the barrier film 10 is formed on the side surface and the bottom surface of the groove 12 of the organic insulating layer 4. The barrier film 10 is formed on the exposed surface of the inorganic insulating film 9 in the groove 14 of the organic insulating layer 4 and the exposed surface of the wiring 5B in the groove 14 of the organic insulating layer 4. Therefore, the barrier film 10 is formed on the side surface and the bottom surface of the groove 14 of the organic insulating layer 4. The thickness of the barrier film 10 is, for example, not less than 50 nm and not more than 200 nm.

Next, a Cu seed layer is formed on the barrier film 10 using a sputtering apparatus. The thickness of the Cu seed layer is, for example, not less than 100 nm and not more than 250 nm. Next, a Cu layer is formed on the Cu seed layer by, for example, electrolytic plating. The electroplating method is performed at a current density of about 4 A / cm ² , for example. Thereby, C in each groove 12 and groove 14 of the organic insulating layer 4 is obtained.
A u seed layer and a Cu layer are embedded.

  Next, the Cu device, the Cu seed layer, the inorganic insulating film 9, and the barrier film 10 are polished by, for example, CMP until the surface of the organic insulating layer 4 is exposed, whereby the semiconductor device 1 shown in FIG. 2 is manufactured. The By leaving the Cu layer and the Cu seed layer in each groove 12 of the organic insulating layer 4, the wiring 6 is formed in each groove 12 of the organic insulating layer 4. The height of the wiring 6 is, for example, about 2 μm. By leaving the Cu layer and the Cu seed layer in the groove 14 of the organic insulating layer 4, the via 7 and the land 8 are formed in the groove 14 of the organic insulating layer 4. Since the inorganic insulating film 9 on the wiring 5B is removed, the wiring 5B and the via 7 are electrically connected via the barrier film 10.

With reference to FIG.9 and FIG.10, the investigation result performed in order to confirm the effect of Example 1 is demonstrated. FIG. 9 is a cross-sectional view of the test body according to Example 1. As shown in FIG. 9, the adhesion film 3 is formed on the substrate 2, and the organic insulating layer 4, the wiring 6, the via 21, and the lead electrode 22 are formed on the adhesion film 3, whereby the test body according to Example 1 Manufactured. As a test body according to Example 1, the first test body in which the side surface and the lower surface of the wiring 6 are covered with the inorganic insulating film 9, and the side surface and the lower surface of the wiring 6 are covered with the inorganic insulating film 9 and the barrier film 10. The second test body in a state of being used was used. SiO ₂ was used as the material of the inorganic insulating film 9 and Ti was used as the material of the barrier film 10. Further, as a test body according to the comparative example, a third test body in a state where the wiring 6 was formed on the barrier film 10 was used. The wirings 6 of the first to third test bodies are all L / S = 2/2 μm.

The first to third test specimens are arranged on the stage 23, and a current is applied to the wiring 6 from the power source 24 through the probe 25 under the condition of a current density of 10 ⁶ A / cm ^2. The rate (ΔR / R) was measured. FIG. 10 is a diagram showing a result of measuring the resistance change rate of the wiring 6 of the first to third test bodies. The horizontal axis in FIG. 10 is the test time (hours), and the vertical axis in FIG. 10 is the resistance change rate (%) of the wiring 6.

As shown in FIG. 10, in the first test body according to Example 1, even when the measurement time reaches 100 hours, the resistance change rate of the wiring 6 is suppressed to 10% or less. As shown in FIG. 10, in the second test body according to Example 1, the resistance change rate of the wiring 6 is suppressed to 5% or less even when the measurement time reaches 100 hours. As shown in FIG. 10, in the third test body according to the comparative example, the resistance change rate of the wiring 6 rapidly increases in a short time, and an open failure occurs in the wiring 6. As the inorganic insulating film 9, an inorganic oxide film such as Al ₂ O ₃ , Ta ₂ O ₅ , Co ₃ O ₄ , WO ₃ , an inorganic nitride film such as SiN or AlN, an inorganic carbide film such as SiC, TiC, or W ₂ C The results similar to those shown in FIG. 10 were confirmed for each of these cases. The results similar to those shown in FIG. 10 were confirmed when Ta, TiN, and TaN were used as the material of the barrier film 10.

<Example 2>
A semiconductor device 1 according to a second embodiment will be described. The same components as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and the description thereof is omitted. FIG. 11 is a cross-sectional view of the semiconductor device 1 according to the second embodiment. The semiconductor device 1 includes a substrate 2, an adhesion layer 3, an organic insulating layer 31, wirings 5A and 5B, a plurality of wirings 6, vias 7, lands 8, a plurality of inorganic insulating films 9, and a plurality of barrier films 10. An adhesion layer 3 is formed on the substrate 2, and an organic insulating layer 31 is formed on the adhesion layer 3. In the organic insulating layer 31, wirings 5A and 5B, a plurality of wirings 6, vias 7, lands 8, a plurality of inorganic insulating films 9, and a plurality of barrier films 10 are provided. Wirings 5 </ b> A and 5 </ b> B are formed on the adhesion layer 3. Note that the organic insulating layer 31 and the wirings 5 </ b> A and 5 </ b> B may be formed on the substrate 2 by omitting the formation of the adhesion layer 3. The organic insulating layer 31 is made of, for example, a polyimide resin. The organic insulating layer 31 may be formed of, for example, photosensitive phenol resin, BCB, epoxy resin, epoxy acrylate, PBO, or the like.

  An inorganic insulating film 9 and a barrier film 10 are disposed between the organic insulating layer 31 and each wiring 6, and a barrier film 10 is disposed between each wiring 6 and each inorganic insulating film 9. The inorganic insulating film 9 and the barrier film 10 cover the side surface and the lower surface of each wiring 6. The inorganic insulating film 9 and the barrier film 10 are disposed between the organic insulating layer 31 and the via 7 and the land 8, and the inorganic insulating film 9 is disposed between the via 7 and the land 8 and the barrier film 10. The inorganic insulating film 9 and the barrier film 10 cover the side surface of the via 7 and the side surface and the lower surface of the land 8. The barrier film 10 prevents Cu, which is a constituent atom of each wiring 6, via 7, and land 8, from diffusing into the organic insulating layer 31.

  Since the inorganic insulating film 9 covers the periphery of each wiring 6, the dielectric constant of the insulator including the organic insulating layer 31 disposed around each wiring 6 is lowered. As a result, when a high current is applied, dielectric breakdown around each wiring 6 is suppressed, and a short circuit failure between each wiring 6 is suppressed. When the inorganic insulating film 9 covers the periphery of the via 7 and the land 8, the dielectric constant of the insulator including the organic insulating layer 31 disposed around the via 7 and the land 8 is lowered. As a result, when a high current is applied, dielectric breakdown around the via 7 and the land 8 is suppressed, and a short circuit failure between each wiring 6 and the via 7 and the land 8 is suppressed. Thereby, the reliability of the wiring structure of the semiconductor device 1 can be improved, and the reliability of the semiconductor device 1 when a high current is applied is improved.

  The inorganic insulating film 9 is excellent in heat resistance. It can withstand the temperature rise of each wiring 6, via 7 and land 8 due to a high current flowing through each wiring 6, via 7 and land 8. Therefore, even when a high current flows through each wiring 6, via 7, and land 8, dielectric breakdown around each wiring 6, via 7, and land 8 is suppressed. In addition, since the heat of each wiring 6, via 7, and land 8 is transmitted to the inorganic insulating film 9, oxidation of the outer peripheral portion of each wiring 6, via 7, and land 8 can be suppressed.

<Method for Manufacturing Semiconductor Device 1 According to Example 2>
A method for manufacturing the semiconductor device 1 according to the second embodiment will be described. 12 to 16 are cross-sectional views illustrating an example of a manufacturing process of the semiconductor device 1 according to the second embodiment. In Example 2, the same process as the process of forming wirings 5A and 5B in Example 1 (see FIG. 3) is performed. Since this step has been described in the first embodiment, the description thereof is omitted in the second embodiment.

  After performing the step of forming the wirings 5A and 5B, an organic insulating layer 31A is formed on the substrate 2 as shown in FIG. The formation of the organic insulating layer 31A may be performed, for example, by the following method. First, a polyimide resin is applied on the substrate 2. As the polyimide resin, a liquid resin that cures the exposed portion is used. The thickness of the polyimide resin is, for example, 10 μm or more and 20 μm or less. Next, the polyimide resin is exposed using an exposure mask in which vias having a diameter of 40 μm are patterned, and the polyimide resin is developed using a developer to form the organic insulating layer 31A. The developer is, for example, TMAH. The organic insulating layer 31A has a groove 32 in which a part of the wiring 5B is exposed.

  Next, as shown in FIG. 13, the organic insulating layer 31 </ b> B is formed on the organic insulating layer 31 </ b> A, thereby forming the organic insulating layer 31 on the substrate 2. The organic insulating layer 31B may be formed by the following method, for example. First, a polyimide resin is applied on the substrate 2. Thereby, the polyimide resin is applied on the organic insulating layer 31A, and the polyimide resin is applied in the groove 32 of the organic insulating layer 31A. The thickness of the polyimide resin is, for example, 4 μm or more and 10 μm or less. Next, the polyimide resin applied on the organic insulating layer 31A is exposed using an exposure mask in which L / S = 2/2 μm wiring and land having a diameter of 90 μm are patterned. Next, the polyimide resin applied in the groove 32 of the organic insulating layer 31A is exposed using an exposure mask in which a via having a diameter of 40 μm is patterned. Next, the polyimide resin is developed using a developer to form the organic insulating layer 31B on the organic insulating layer 31A. The developer is, for example, TMAH.

  The organic insulating layer 31 has a plurality of grooves 33. The organic insulating layer 31B has a groove 34 connected to the groove 32 of the organic insulating layer 31A. The diameter of the groove 32 of the organic insulating layer 31A is about 40 μm, and the diameter of the groove 34 of the organic insulating layer 31B is about 90 μm. Therefore, the organic insulating layer 31 has a step-like groove 35 reaching the wiring 5B.

  Next, as shown in FIG. 14, the barrier film 10 is formed on the organic insulating layer 31 and the barrier film 10 is formed on the wiring 5B using a sputtering apparatus. The barrier film 10 is formed on the side surface and bottom surface of the groove 33 of the organic insulating layer 31 and on the side surface and bottom surface of the groove 35 of the organic insulating layer 31. The thickness of the barrier film 10 is, for example, not less than 50 nm and not more than 200 nm.

  Next, as shown in FIG. 15, an inorganic insulating film 9 is formed on the barrier film 10 by CVD. The inorganic insulating film 9 is formed on the exposed surface of the barrier film 10 in the groove 33 of the organic insulating layer 31. Therefore, the inorganic insulating film 9 is formed on the side surface and the bottom surface of the groove 33 of the organic insulating layer 31. The inorganic insulating film 9 is formed on the exposed surface of the barrier film 10 in the groove 35 of the organic insulating layer 31. Therefore, the inorganic insulating film 9 is formed on the side surface and the bottom surface of the groove 35 of the organic insulating layer 31. The thickness of the inorganic insulating film 9 is, for example, not less than 100 nm and not more than 300 nm.

  Next, as shown in FIG. 16, after applying a photosensitive resist on the barrier film 10, the photosensitive resist is exposed using an exposure mask, and the photosensitive resist is developed using a developer. Then, a resist pattern 36 is formed on the barrier film 10. The developer is, for example, TMAH. The resist pattern 36 has an opening through which the inorganic insulating film 9 formed on the bottom surface of the groove 35 of the organic insulating layer 31 is exposed.

Next, as shown in FIG. 16, the inorganic insulating film 9 formed on the bottom surface of the groove 35 of the organic insulating layer 31 is removed by performing anisotropic etching using the resist pattern 36 as a mask. That is, the inorganic insulating film 9 above the wiring 5B is removed. Thereby, the barrier film 10 formed on the wiring 5 </ b> B is exposed in the groove 35 of the organic insulating layer 31. Next, the resist pattern 36 is removed using a stripping solution. The stripping solution is, for example, NMP.

Next, a Cu seed layer is formed on the inorganic insulating film 9 and the barrier film 10 using a sputtering apparatus. The thickness of the Cu seed layer is, for example, not less than 100 nm and not more than 250 nm. Next, a Cu layer is formed on the Cu seed layer by, for example, electrolytic plating. The electroplating method is performed at a current density of about 4 A / cm ² , for example. Thereby, each groove 33 of the organic insulating layer 31 is formed.
A Cu seed layer and a Cu layer are embedded in the inside and the groove 35.

  Next, the Cu device, the Cu seed layer, the inorganic insulating film 9, and the barrier film 10 are polished by, for example, CMP until the surface of the organic insulating layer 31 is exposed, whereby the semiconductor device 1 shown in FIG. 11 is manufactured. The By leaving the Cu layer and the Cu seed layer in each groove 33 of the organic insulating layer 31, the wiring 6 is formed in each groove 33 of the organic insulating layer 31. The height of the wiring 6 is, for example, about 2 μm. By leaving the Cu layer and the Cu seed layer in the groove 35 of the organic insulating layer 31, the via 7 and the land 8 are formed in the groove 35 of the organic insulating layer 31. Since the inorganic insulating film 9 formed on the bottom surface of the groove 35 of the organic insulating layer 31 is removed, the wiring 5B and the via 7 are electrically connected through the barrier film 10.

In order to confirm the effect of Example 2, the resistance change rate of the wiring 6 of the test body according to Example 2 was measured by the same measurement method as in Example 1. SiN was used as the material of the inorganic insulating film 9 and Ti was used as the material of the barrier film 10. For the test body according to Example 2, it was confirmed that the resistance change rate of the wiring 6 was suppressed to 10% or less even when the measurement time reached 100 hours. As the inorganic insulating film 9, inorganic oxide films such as SiO ₂ , Al ₂ O ₃ , Ta ₂ O ₅ , Co ₃ O ₄ , WO ₃ , inorganic nitride films such as AlN, inorganic carbonization such as SiC, TiC, and W ₂ C Similar results were confirmed for each of the membranes. Similar results were confirmed when Ta, TiN, and TaN were used as the material of the barrier film 10, respectively.

<Example 3>
A semiconductor device 1 according to a third embodiment will be described. The same components as those in the first and second embodiments are denoted by the same reference numerals as those in the first and second embodiments, and the description thereof is omitted. In the third embodiment, a method of forming a plurality of wirings 6, vias 7 and lands 8 with solder will be described. 17 and 18 are cross-sectional views illustrating an example of the manufacturing process of the semiconductor device 1 according to the third embodiment. In Example 3, the same process as the process of removing the resist pattern 15 from the process of forming the wirings 5A and 5B in Example 1 (see FIGS. 3 to 7) is performed. Since these steps are described in the first embodiment, the description thereof is omitted in the third embodiment.

  After performing the process of removing the resist pattern 15, as shown in FIG. 17, the barrier film 10 is formed on the wiring 5B and the inorganic insulating film 9 using a sputtering apparatus. The barrier film 10 is formed on the exposed surface of the inorganic insulating film 9 in the groove 12 of the organic insulating layer 4. Therefore, the barrier film 10 is formed on the side surface and the bottom surface of the groove 12 of the organic insulating layer 4. The barrier film 10 is formed on the exposed surface of the inorganic insulating film 9 in the groove 14 of the organic insulating layer 4 and the exposed surface of the wiring 5B in the groove 14 of the organic insulating layer 4. Therefore, the barrier film 10 is formed on the side surface and the bottom surface of the groove 14 of the organic insulating layer 4. The thickness of the barrier film 10 is, for example, not less than 50 nm and not more than 200 nm.

Next, as shown in FIG. 17, the solder paste 42 is printed using the squeegee 41. As a result, the solder paste 42 is embedded in each groove 12 and groove 14 of the organic insulating layer 4. The solder paste 42 is, for example, a Sn—Ag—Cu solder paste. Next, reflow (heat treatment) is performed under the condition of a processing temperature of about 240 ° C. to cure the solder paste 42.

  Next, as shown in FIG. 18, the solder, the inorganic insulating film 9, and the barrier film 10 are polished by CMP, for example, until the surface of the organic insulating layer 4 is exposed. As the solder remains in each groove 12 of the organic insulating layer 4, a wiring 43 is formed in each groove 12 of the organic insulating layer 4. The height of the wiring 43 is, for example, about 2 μm. By leaving solder in the grooves 14 of the organic insulating layer 4, vias 44 and lands 45 are formed in the grooves 14 of the organic insulating layer 4. Since the inorganic insulating film 9 on the wiring 5B is removed, the wiring 5B and the via 44 are electrically connected via the barrier film 10. 17 and 18 show an example in which the barrier film 10 is formed, but the third embodiment is not limited to this example, and the formation of the barrier film 10 may be omitted. The wiring 43, the via 44, and the land 45 are examples of conductors.

In order to confirm the effect of Example 3, the resistance change rate of the wiring 43 of the test body according to Example 3 was measured by the same measurement method as in Example 1. SiC was used as the material of the inorganic insulating film 9 and Ti was used as the material of the barrier film 10. For the test body according to Example 3, it was confirmed that the resistance change rate of the wiring 43 was suppressed to 10% or less even when the measurement time reached 100 hours. As the inorganic insulating film 9, inorganic oxide films such as SiO ₂ , Al ₂ O ₃ , Ta ₂ O ₅ , Co ₃ O ₄ and WO ₃ , inorganic nitride films such as SiN and AlN, and inorganic carbonization such as TiC and W ₂ C Similar results were confirmed for each of the membranes. Similar results were confirmed when Ta, TiN, and TaN were used as the material of the barrier film 10, respectively.

<Example 4>
A semiconductor device 1 according to a fourth embodiment will be described. The same components as in the first to third embodiments are denoted by the same reference numerals as those in the first to third embodiments, and the description thereof is omitted. In the fourth embodiment, a method of forming the wirings 5A and 5B, the plurality of wirings 6, the vias 7, and the lands 8 with Ag (silver) will be described. 19 to 21 are cross-sectional views illustrating an example of a manufacturing process of the semiconductor device 1 according to the fourth embodiment.

  First, as shown in FIG. 19, after preparing the substrate 2, the adhesion layer 3 is formed on the substrate 2. The adhesion layer 3 is made of, for example, a polyimide resin. The thickness of the adhesion layer 3 is, for example, 1 μm or more and 5 μm or less. Next, as shown in FIG. 19, wirings 51 </ b> A and 51 </ b> B are formed apart on the adhesion layer 3. The width of the wirings 51A and 51B is, for example, about 90 μm. The wirings 51 </ b> A and 51 </ b> B may be formed on the substrate 2 by omitting the formation of the adhesion layer 3.

  The wirings 51A and 51B may be formed by the following method, for example. A resist film having a thickness of 2 μm is formed on the substrate 2. By exposing and developing the resist film, a resist pattern in which regions where the wirings 51A and 51B are to be formed is formed is formed. After performing the Ag paste printing and CMP, the resist pattern is peeled to form the wirings 51A and 51B. Then, in Example 4, the process similar to the process (refer FIGS. 4-7) of removing the resist pattern 15 from the process of forming the organic insulating layer 4 in Example 1 is performed. Since these steps have been described in the first embodiment, the description thereof will be omitted in the fourth embodiment.

  After the step of removing the resist pattern 15 is performed, the conductor paste 52 is printed using the squeegee 41 as shown in FIG. The conductor paste 52 is, for example, an Ag paste, an Au (gold) paste, or an Al (aluminum) paste. Thereby, the conductor paste 52 is embedded in each groove 12 and the groove 14 of the organic insulating layer 4. Next, reflow (heat treatment) is performed under conditions of a processing temperature of 100 ° C. and a processing time of 30 minutes, and the conductor paste 52 is cured.

  Next, as shown in FIG. 21, the conductor and the inorganic insulating film 9 are polished by CMP, for example, until the surface of the organic insulating layer 4 is exposed. By leaving the conductor in each groove 12 of the organic insulating layer 4, a wiring 53 is formed in each groove 12 of the organic insulating layer 4. The height of the wiring 53 is, for example, about 2 μm. By leaving the conductor in the groove 14 of the organic insulating layer 4, a via 54 and a land 55 are formed in the groove 14 of the organic insulating layer 4. Since the inorganic insulating film 9 on the wiring 51B is removed, the wiring 51B and the via 54 are electrically connected. The barrier film 10 may be disposed between each wiring 53 and each inorganic insulating film 9. The barrier film 10 may be disposed between the via 54 and the land 55 and the inorganic insulating film 9. The barrier film 10 prevents the constituent atoms of the wiring 53, the via 54, and the land 55 from diffusing into the organic insulating layer 4 and the inorganic insulating film 9. The wiring 53, the via 54, and the land 55 are examples of conductors.

In order to confirm the effect of Example 4, the resistance change rate of the wiring 53 of the test body according to Example 4 was measured by the same measurement method as in Example 1. Ag paste was used as the conductor paste 52, SiC was used as the material of the inorganic insulating film 9, and Ti was used as the material of the barrier film 10. For the test body according to Example 4, it was confirmed that the resistance change rate of the wiring 53 was suppressed to 10% or less even when the measurement time reached 100 hours. As the inorganic insulating film 9, inorganic oxide films such as SiO ₂ , Al ₂ O ₃ , Ta ₂ O ₅ , Co ₃ O ₄ and WO ₃ , inorganic nitride films such as SiN and AlN, and inorganic carbonization such as TiC and W ₂ C Similar results were confirmed for each of the membranes.
Similar results were confirmed when each of the Au paste and the Al paste was used as the conductor paste 52. Similar results were confirmed when Ta, TiN, and TaN were used as the material of the barrier film 10, respectively.

<Example 5>
A semiconductor device 1 according to a fifth embodiment will be described. The same components as those of the first to fourth embodiments are denoted by the same reference numerals as those of the first to fourth embodiments, and the description thereof is omitted. FIG. 22 is a cross-sectional view of the semiconductor device 1 according to the fifth embodiment. The semiconductor device 1 includes a substrate 2, an adhesion layer 3, an organic insulating layer 4, wirings 5A and 5B, a plurality of wirings 6, a via 7, a land 8, a plurality of inorganic insulating films 9, a plurality of barrier films 10, and a plurality of organic insulations. A film 61 is provided. The organic insulating film 61 is made of, for example, phenol resin, polyimide resin, BCB, epoxy resin, epoxy acrylate, PBO, or the like. Inside the organic insulating layer 4, wirings 5A and 5B, a plurality of wirings 6, vias 7, lands 8, a plurality of inorganic insulating films 9, a plurality of barrier films 10, and a plurality of organic insulating films 61 are provided.

  An inorganic insulating film 9, a barrier film 10, and an organic insulating film 61 are respectively disposed between the organic insulating layer 4 and each wiring 6, and the barrier film 10 and the organic insulating film 61 are directed from the wiring 6 toward the organic insulating layer 4. And the inorganic insulating film 9 are arranged in this order. The inorganic insulating film 9, the barrier film 10 and the organic insulating film 61 cover the side surfaces and the lower surface of each wiring 6. An inorganic insulating film 9, a barrier film 10, and an organic insulating film 61 are respectively disposed between the organic insulating layer 4 and the via 7. The barrier film 10, the organic insulating film 61, and the organic insulating film 61 are arranged from the via 7 toward the organic insulating layer 4. The inorganic insulating films 9 are arranged in this order. Between the organic insulating layer 4 and the land 8, an inorganic insulating film 9, a barrier film 10, and an organic insulating film 61 are disposed, respectively, and from the land 8 toward the organic insulating layer 4, the barrier film 10, the organic insulating film 61, and The inorganic insulating films 9 are arranged in this order. The inorganic insulating film 9, the barrier film 10, and the organic insulating film 61 cover the side surface of the via 7 and the side surface and the lower surface of the land 8.

The dielectric constant of the organic insulating film 61 is smaller than the dielectric constant of the inorganic insulating film 9. Since the inorganic insulating film 9 and the organic insulating film 61 cover the periphery of each wiring 6, the dielectric constant of the insulator including the organic insulating layer 4 disposed around each wiring 6 is further reduced. As a result, when a high current is applied, dielectric breakdown around each wiring 6 is further suppressed, and a short circuit failure between each wiring 6 is further suppressed. When the inorganic insulating film 9 and the organic insulating film 61 cover the periphery of the via 7 and the land 8, the dielectric constant of the insulator including the organic insulating layer 4 disposed around the via 7 and the land 8 is further reduced. As a result, when a high current is applied, dielectric breakdown around the via 7 and the land 8 is further suppressed, and a short circuit failure between each wiring 6 and the via 7 and the land 8 is further suppressed.

The structure of the semiconductor device 1 according to the fifth embodiment may be modified as follows.
<Modification 1 of Example 5>
The formation of the barrier film 10 may be omitted. An inorganic insulating film 9 and an organic insulating film 61 are arranged between the organic insulating layer 4 and each wiring 6, and the organic insulating film 61 and the inorganic insulating film 9 are arranged in this order from the wiring 6 toward the organic insulating layer 4. May be. An inorganic insulating film 9 and an organic insulating film 61 are arranged between the organic insulating layer 4 and the via 7, respectively, and the organic insulating film 61 and the inorganic insulating film 9 are arranged in this order from the via 7 toward the organic insulating layer 4. May be. An inorganic insulating film 9 and an organic insulating film 61 are disposed between the organic insulating layer 4 and the land 8, respectively, and the organic insulating film 61 and the inorganic insulating film 9 are disposed in this order from the land 8 toward the organic insulating layer 4. May be.

<Modification 2 of Example 5>
The arrangement of the barrier film 10 and the organic insulating film 61 may be changed. An inorganic insulating film 9, a barrier film 10, and an organic insulating film 61 are disposed between the organic insulating layer 4 and each wiring 6. The organic insulating film 61 and the barrier film 10 are arranged from the wiring 6 toward the organic insulating layer 4. And the inorganic insulating film 9 may be disposed in this order. An inorganic insulating film 9, a barrier film 10, and an organic insulating film 61 are respectively disposed between the organic insulating layer 4 and the via 7. The barrier film 10, the organic insulating film 61, and the organic insulating film 61 are arranged from the via 7 toward the organic insulating layer 4. The inorganic insulating films 9 are arranged in this order. An inorganic insulating film 9, a barrier film 10, and an organic insulating film 61 are disposed between the organic insulating layer 4 and the land 8, and the organic insulating film 61, the barrier film 10 and the organic insulating film 61 are arranged from the land 8 toward the organic insulating layer 4. The inorganic insulating films 9 may be arranged in this order.

<Modification 3 of Example 5>
The arrangement of the inorganic insulating film 9, the barrier film 10, and the organic insulating film 61 may be changed. An inorganic insulating film 9, a barrier film 10 and an organic insulating film 61 are arranged between the organic insulating layer 4 and each wiring 6, and the organic insulating film 61 and the inorganic insulating film are arranged from the wiring 6 toward the organic insulating layer 4. 9 and the barrier film 10 may be arranged in this order. Between the organic insulating layer 4 and the via 7, the inorganic insulating film 9, the barrier film 10, and the organic insulating film 61 are disposed, respectively, and the organic insulating film 61 and the inorganic insulating film 9 are directed from the via 7 toward the organic insulating layer 4. And the barrier film 10 may be arranged in this order. An inorganic insulating film 9, a barrier film 10, and an organic insulating film 61 are disposed between the organic insulating layer 4 and the land 8, and the organic insulating film 61 and the inorganic insulating film 9 are directed from the land 8 toward the organic insulating layer 4. And the barrier film 10 may be arranged in this order.

<Manufacturing Method of Semiconductor Device 1 According to Example 5>
A method for manufacturing the semiconductor device 1 according to the fifth embodiment will be described. 23 to 25 are cross-sectional views illustrating an example of the manufacturing process of the semiconductor device 1 according to the fifth embodiment. In Example 5, the same process as the process of forming the inorganic insulating film 9 (see FIGS. 3 to 6) is performed from the process of forming the wirings 5A and 5B in Example 1. Since these steps are described in the first embodiment, the description thereof is omitted in the fifth embodiment.

  After performing the process of forming the inorganic insulating film 9, as shown in FIG. 23, the organic insulating film 61 is formed on the inorganic insulating film 9 by CVD, for example. The organic insulating film 61 is formed on the exposed surface of the inorganic insulating film 9 in the groove 12 of the organic insulating layer 4. Therefore, the organic insulating film 61 is formed on the side surface and the bottom surface of the groove 12 of the organic insulating layer 4. The organic insulating film 61 is formed on the exposed surface of the inorganic insulating film 9 in the groove 14 of the organic insulating layer 4. Therefore, the organic insulating film 61 is formed on the side surface and the bottom surface of the groove 14 of the organic insulating layer 4. The thickness of the organic insulating film 61 is, for example, not less than 100 nm and not more than 300 nm.

  Next, as shown in FIG. 24, after applying a photosensitive resist on the organic insulating film 61, the photosensitive resist is exposed using an exposure mask, and the photosensitive resist is developed using a developer. Then, a resist pattern 62 is formed on the organic insulating film 61. The developer is, for example, TMAH. The resist pattern 62 has an opening through which the organic insulating film 61 formed on the bottom surface of the groove 14 of the organic insulating layer 4 is exposed.

  Next, as shown in FIG. 24, the inorganic insulating film 9 and the organic insulating film 61 formed on the bottom surface of the groove 14 of the organic insulating layer 4 are removed by performing anisotropic etching using the resist pattern 62 as a mask. . That is, the inorganic insulating film 9 and the organic insulating film 61 formed on the wiring 5B are removed. Thereby, a part of the wiring 5 </ b> B is exposed in the groove 14 of the organic insulating layer 4. Next, the resist pattern 62 is removed using a stripping solution. The stripping solution is, for example, NMP.

  Next, as shown in FIG. 25, the barrier film 10 is formed on the wiring 5B and the organic insulating film 61 using a sputtering apparatus. The barrier film 10 is formed on the exposed surface of the organic insulating film 61 in the groove 12 of the organic insulating layer 4. Therefore, the barrier film 10 is formed on the side surface and the bottom surface of the groove 12 of the organic insulating layer 4. The barrier film 10 is formed on the exposed surface of the organic insulating film 61 in the groove 14 of the organic insulating layer 4 and the exposed surface of the wiring 5B in the groove 14 of the organic insulating layer 4. Therefore, the barrier film 10 is formed on the side surface and the bottom surface of the groove 14 of the organic insulating layer 4. The thickness of the barrier film 10 is, for example, not less than 50 nm and not more than 200 nm.

Next, a Cu seed layer is formed on the wiring 5B and the barrier film 10 using a sputtering apparatus. The thickness of the Cu seed layer is, for example, not less than 100 nm and not more than 250 nm. Next, a Cu layer is formed on the Cu seed layer by, for example, electrolytic plating. The electroplating method is performed at a current density of about 4 A / cm ² , for example. Thereby, the Cu seed layer and the Cu layer are embedded in each groove 12 and groove 14 of the organic insulating layer 4.

  Next, for example, by polishing the Cu layer, the Cu seed layer, the barrier film 10, the organic insulating film 61, and the inorganic insulating film 9 by CMP until the surface of the organic insulating layer 4 is exposed, the semiconductor shown in FIG. The device 1 is manufactured. By leaving the Cu layer and the Cu seed layer in each groove 12 of the organic insulating layer 4, the wiring 6 is formed in each groove 12 of the organic insulating layer 4. The height of the wiring 6 is, for example, about 2 μm. By leaving the Cu layer and the Cu seed layer in the groove 14 of the organic insulating layer 4, the via 7 and the land 8 are formed in the groove 14 of the organic insulating layer 4. Since the inorganic insulating film 9 and the organic insulating film 61 on the wiring 5B are removed, the wiring 5B and the via 7 are electrically connected through the barrier film 10.

<Method for Manufacturing Semiconductor Device 1 According to Modification 1 of Example 5>
A method for manufacturing the semiconductor device 1 according to the first modification of the fifth embodiment will be described. FIG. 26 is a cross-sectional view illustrating an example of the manufacturing process of the semiconductor device 1 according to the first modification of the fifth embodiment. In the first modification of the fifth embodiment, the same process as the process of forming the inorganic insulating film 9 (see FIGS. 3 to 6) is performed from the process of forming the wirings 5A and 5B in the first embodiment. In the first modification of the fifth embodiment, the same process as the process of removing the resist pattern 62 from the process of forming the organic insulating film 61 in the fifth embodiment (see FIGS. 23 and 24) is performed. Since these steps have been described in the first embodiment and the fifth embodiment, the description thereof is omitted in the first modification of the fifth embodiment.

After performing the step of removing the resist pattern 62, a Cu seed layer is formed on the wiring 5B and the organic insulating film 61 using a sputtering apparatus. The thickness of the Cu seed layer is, for example, not less than 100 nm and not more than 250 nm. Next, a Cu layer is formed on the Cu seed layer by, for example, electrolytic plating. The electroplating method is performed at a current density of about 4 A / cm ² , for example. Thereby, the Cu seed layer and the Cu layer are embedded in each groove 12 and groove 14 of the organic insulating layer 4.

  Next, as shown in FIG. 26, the Cu layer, the Cu seed layer, the inorganic insulating film 9, and the organic insulating film 61 are polished by CMP, for example, until the surface of the organic insulating layer 4 is exposed. By leaving the Cu layer and the Cu seed layer in each groove 12 of the organic insulating layer 4, the wiring 6 is formed in each groove 12 of the organic insulating layer 4. The height of the wiring 6 is, for example, about 2 μm. By leaving the Cu layer and the Cu seed layer in the groove 14 of the organic insulating layer 4, the via 7 and the land 8 are formed in the groove 14 of the organic insulating layer 4. Since the inorganic insulating film 9 and the organic insulating film 61 on the wiring 5B are removed, the wiring 5B and the via 7 are electrically connected.

<Method for Manufacturing Semiconductor Device 1 According to Modification 2 of Example 5>
A method for manufacturing the semiconductor device 1 according to the second modification of the fifth embodiment will be described. 27 to 30 are cross-sectional views illustrating an example of the manufacturing process of the semiconductor device 1 according to the second modification of the fifth embodiment. In the second modification of the fifth embodiment, the same process as the process of forming the inorganic insulating film 9 (see FIGS. 3 to 6) is performed from the process of forming the wirings 5A and 5B in the first embodiment. Since these steps are described in the first embodiment, the description thereof is omitted in the second modification of the fifth embodiment.

  After performing the process of forming the inorganic insulating film 9, as shown in FIG. 27, the barrier film 10 is formed on the inorganic insulating film 9 using a sputtering apparatus, for example. The barrier film 10 is formed on the exposed surface of the inorganic insulating film 9 in the groove 12 of the organic insulating layer 4. Therefore, the barrier film 10 is formed on the side surface and the bottom surface of the groove 12 of the organic insulating layer 4. The barrier film 10 is formed on the exposed surface of the inorganic insulating film 9 in the groove 14 of the organic insulating layer 4. Therefore, the barrier film 10 is formed on the side surface and the bottom surface of the groove 14 of the organic insulating layer 4. The thickness of the barrier film 10 is, for example, not less than 50 nm and not more than 200 nm.

  Next, as shown in FIG. 28, an organic insulating film 61 is formed on the barrier film 10 by, for example, CVD. The organic insulating film 61 is formed on the exposed surface of the barrier film 10 in the groove 12 of the organic insulating layer 4. Therefore, the organic insulating film 61 is formed on the side surface and the bottom surface of the groove 12 of the organic insulating layer 4. The organic insulating film 61 is formed on the exposed surface of the barrier film 10 in the groove 14 of the organic insulating layer 4. Therefore, the organic insulating film 61 is formed on the side surface and the bottom surface of the groove 14 of the organic insulating layer 4. The thickness of the organic insulating film 61 is, for example, not less than 100 nm and not more than 300 nm.

  Next, as shown in FIG. 29, after applying a photosensitive resist on the organic insulating film 61, the photosensitive resist is exposed using an exposure mask, and the photosensitive resist is developed using a developer. Then, a resist pattern 63 is formed on the organic insulating film 61. The developer is, for example, TMAH. The resist pattern 63 has an opening through which the organic insulating film 61 formed on the bottom surface of the groove 14 of the organic insulating layer 4 is exposed.

  Next, as shown in FIG. 29, by performing anisotropic etching using the resist pattern 63 as a mask, the inorganic insulating film 9, the barrier film 10, and the organic insulating film formed on the bottom surface of the groove 14 of the organic insulating layer 4 61 is removed. That is, the inorganic insulating film 9, the barrier film 10, and the organic insulating film 61 formed on the wiring 5B are removed. Thereby, a part of the wiring 5 </ b> B is exposed in the groove 14 of the organic insulating layer 4. Next, the resist pattern 63 is removed using a stripping solution. The stripping solution is, for example, NMP.

Next, a Cu seed layer is formed on the organic insulating film 61 using a sputtering apparatus. The thickness of the Cu seed layer is, for example, not less than 100 nm and not more than 250 nm. Next, a Cu layer is formed on the Cu seed layer by, for example, electrolytic plating. The electroplating method is performed at a current density of about 4 A / cm ² , for example. Thereby, the Cu seed layer and the Cu layer are embedded in each groove 12 and groove 14 of the organic insulating layer 4.

  Next, as shown in FIG. 30, the Cu layer, the Cu seed layer, the inorganic insulating film 9, the barrier film 10, and the organic insulating film 61 are polished by, for example, CMP until the surface of the organic insulating layer 4 is exposed. By leaving the Cu layer and the Cu seed layer in each groove 12 of the organic insulating layer 4, the wiring 6 is formed in each groove 12 of the organic insulating layer 4. The height of the wiring 6 is, for example, about 2 μm. By leaving the Cu layer and the Cu seed layer in the groove 14 of the organic insulating layer 4, the via 7 and the land 8 are formed in the groove 14 of the organic insulating layer 4. Since the inorganic insulating film 9, the barrier film 10, and the organic insulating film 61 on the wiring 5B are removed, the wiring 5B and the via 7 are electrically connected.

<Method for Manufacturing Semiconductor Device 1 According to Modification 3 of Example 5>
A method for manufacturing the semiconductor device 1 according to the third modification of the fifth embodiment will be described. 31 to 33 are cross-sectional views illustrating an example of the manufacturing process of the semiconductor device 1 according to the third modification of the fifth embodiment. In the third modification of the fifth embodiment, the same process as the process of forming the inorganic insulating film 9 (see FIGS. 12 to 15) is performed from the process of forming the wirings 5A and 5B in the second embodiment. Since these steps are described in the second embodiment, the description thereof is omitted in the third modification of the fifth embodiment.

  After performing the process of forming the inorganic insulating film 9, as shown in FIG. 31, the organic insulating film 61 is formed on the inorganic insulating film 9 by CVD, for example. The organic insulating film 61 is formed on the exposed surface of the inorganic insulating film 9 in the groove 33 of the organic insulating layer 31. Therefore, the organic insulating film 61 is formed on the side surface and the bottom surface of the groove 33 of the organic insulating layer 31. The organic insulating film 61 is formed on the exposed surface of the inorganic insulating film 9 in the groove 35 of the organic insulating layer 31. Accordingly, the organic insulating film 61 is formed on the side surface and the bottom surface of the groove 35 of the organic insulating layer 31. The thickness of the organic insulating film 61 is, for example, not less than 100 nm and not more than 300 nm.

  Next, as shown in FIG. 32, after applying a photosensitive resist on the organic insulating film 61, the photosensitive resist is exposed using an exposure mask, and the photosensitive resist is developed using a developer. Thus, a resist pattern 64 is formed on the organic insulating film 61. The developer is, for example, TMAH. The resist pattern 64 has an opening through which the organic insulating film 61 formed on the bottom surface of the groove 35 of the organic insulating layer 31 is exposed.

  Next, as shown in FIG. 32, by performing anisotropic etching using the resist pattern 64 as a mask, the inorganic insulating film 9 and the organic insulating film 61 formed on the bottom surface of the groove 35 of the organic insulating layer 31 are removed. . That is, the inorganic insulating film 9 and the organic insulating film 61 formed on the wiring 5B are removed. Thereby, the barrier film 10 formed on the wiring 5 </ b> B is exposed in the groove 35 of the organic insulating layer 31. Next, the resist pattern 64 is removed using a stripping solution. The stripping solution is, for example, NMP.

Next, a Cu seed layer is formed on the organic insulating film 61 using a sputtering apparatus. The thickness of the Cu seed layer is, for example, not less than 100 nm and not more than 250 nm. Next, a Cu layer is formed on the Cu seed layer by, for example, electrolytic plating. The electroplating method is performed at a current density of about 4 A / cm ² , for example. Thereby, in each groove | channel 31 and the groove | channel 35 of the organic insulating layer 31.
A Cu seed layer and a Cu layer are embedded therein.

Next, as shown in FIG. 33, the Cu layer, the Cu seed layer, the inorganic insulating film 9, the barrier film 10, and the organic insulating film 61 are polished by, for example, CMP until the surface of the organic insulating layer 31 is exposed. By leaving the Cu layer and the Cu seed layer in each groove 31 of the organic insulating layer 31, the wiring 6 is formed in each groove 31 of the organic insulating layer 31. The height of the wiring 6 is, for example, about 2 μm. By leaving the Cu layer and the Cu seed layer in the groove 35 of the organic insulating layer 31, the via 7 and the land 8 are formed in the groove 35 of the organic insulating layer 31. Since the inorganic insulating film 9 and the organic insulating film 61 on the wiring 5B are removed, the wiring 5B and the via 7 are electrically connected through the barrier film 10.

<Example 6>
A semiconductor device 1 according to Example 6 will be described. The same components as those of the first to fifth embodiments are denoted by the same reference numerals as those of the first to fifth embodiments, and the description thereof is omitted. FIG. 34 is a cross-sectional view of the semiconductor device 1 according to the sixth embodiment. The semiconductor device 1 includes a substrate 2, an adhesion layer 3, an organic insulating layer 71, wirings 5A and 5B, a plurality of wirings 6, a via 7, a land 8, a plurality of inorganic insulating films 9, a plurality of barrier films 10, and a plurality of inorganic insulations. A membrane 72 is provided. The inorganic insulating film 72 is made of, for example, SiO ₂ ,
Inorganic oxide films such as Al ₂ O ₃ , Ta ₂ O ₅ , Co ₃ O ₄ and WO ₃ , inorganic nitride films such as SiN and AlN, and inorganic carbide films such as SiC, TiC and W ₂ C. Inside the organic insulating layer 71, wiring 5A, 5
B, a plurality of wirings 6, vias 7, lands 8, a plurality of inorganic insulating films 9, a plurality of barrier films 10, and a plurality of inorganic insulating films 72 are provided. The inorganic insulating film 72 is an example of a second inorganic insulating film.

  Inorganic insulating films 9 and 72 are disposed between the organic insulating layer 71 and each wiring 6. The inorganic insulating film 9 covers the side surface and the lower surface of each wiring 6. The inorganic insulating film 72 covers the upper surface of each wiring 6. A via 7 is formed on the wiring 5 </ b> B, and a land 8 is formed on the via 7. Inorganic insulating films 9 and 72 are disposed between the organic insulating layer 71 and the vias 7 and lands 8. The inorganic insulating film 9 covers the side surface of the via 7 and the side surface and the lower surface of the land 8. The inorganic insulating film 72 covers the upper surface of the land 8.

  The inorganic insulating film 9 covers the side surface and the lower surface of each wiring 6, and the inorganic insulating film 72 covers the upper surface of each wiring 6, whereby an insulator including an organic insulating layer 71 disposed around each wiring 6. The dielectric constant further decreases. As a result, when a high current is applied, dielectric breakdown around each wiring 6 is further suppressed, and a short circuit failure between each wiring 6 is further suppressed. Further, when another wiring is disposed above the wiring 6, a short circuit defect between the wiring 6 and the other wiring is suppressed. The inorganic insulating film 9 covers the side surface of the via 7 and the side surface and the lower surface of the land 8, and the inorganic insulating film 72 covers the upper surface of the land 8, whereby the organic insulation disposed around the via 7 and the land 8. The dielectric constant of the insulator including the layer 71 is further reduced. As a result, when a high current is applied, dielectric breakdown around the via 7 and the land 8 is further suppressed, and a short circuit failure between each wiring 6 and the via 7 and the land 8 is further suppressed.

<Method for Manufacturing Semiconductor Device 1 According to Example 6>
A method for manufacturing the semiconductor device 1 according to the sixth embodiment will be described. 35 to 39 are cross-sectional views illustrating an example of the manufacturing process of the semiconductor device 1 according to the sixth embodiment. As shown in FIG. 35, the inorganic insulating film 72 is formed on the organic insulating layer 4 by, for example, CVD. The thickness of the inorganic insulating film 72 is, for example, not less than 100 nm and not more than 300 nm. FIG. 35 shows a process in the case where the inorganic insulating film 72 is formed on the organic insulating layer 4 provided in the semiconductor device 1 shown in FIG.

  Next, as shown in FIG. 36, after applying a photosensitive resist on the inorganic insulating film 72, the photosensitive resist is exposed using an exposure mask, and the photosensitive resist is developed using a developer. Thus, a resist pattern 73 is formed on the inorganic insulating film 72. The developer is, for example, TMAH.

Next, as shown in FIG. 37, the inorganic insulating film 72 is partially removed by performing anisotropic etching using the resist pattern 73 as a mask. The portion of the inorganic insulating film 72 where the resist pattern 73 is not formed is removed. Next, as shown in FIG. 38, the resist pattern 73 is removed using a stripping solution. The stripping solution is, for example, NMP. Next, as shown in FIG. 39, an organic insulating layer 74 is formed on the organic insulating layer 4, thereby forming an organic insulating layer 71 on the substrate 2. The organic insulating layer 74 is made of, for example, phenol resin, polyimide resin, BCB, epoxy resin, epoxy acrylate, PBO, or the like. The thickness of the organic insulating layer 74 is, for example, 4 μm or more and 20 μm or less.

  The sixth embodiment may be applied to the first to fifth embodiments and the first to third modifications of the fifth embodiment. Therefore, the upper surfaces of the wires 6 and lands 8 included in the semiconductor device 1 according to the first, second, and fifth embodiments and the first to third modifications of the fifth embodiment may be covered with the inorganic insulating film 72. The upper surfaces of the wirings 43 and lands 45 included in the semiconductor device 1 according to the third embodiment may be covered with the inorganic insulating film 72. The upper surfaces of the wirings 53 and the lands 55 provided in the semiconductor device 1 according to the fourth embodiment may be covered with the inorganic insulating film 72. The formation of the inorganic insulating film 72 on the top surface of the land 8 included in the semiconductor device 1 according to the first, second, and fifth embodiments and the first to third modifications of the fifth embodiment may be omitted. The formation of the inorganic insulating film 72 on the upper surface of the land 45 provided in the semiconductor device 1 according to the third embodiment may be omitted. The formation of the inorganic insulating film 72 on the upper surface of the land 55 provided in the semiconductor device 1 according to the fourth embodiment may be omitted.

  The steps of forming the inorganic insulating film 72 on the upper surface of each wiring 6 and land 8 included in the semiconductor device 1 according to the first, second, and fifth and the first to third modifications of the fifth embodiment are shown in FIGS. The process is similar to the process shown in FIG. The step of forming the inorganic insulating film 72 on the upper surfaces of the wirings 43 and the lands 45 included in the semiconductor device 1 according to the third embodiment is performed by the same steps as the steps shown in FIGS. The step of forming the inorganic insulating film 72 on the upper surfaces of the respective wirings 53 and lands 55 included in the semiconductor device 1 according to the fourth embodiment is performed by the same steps as the steps shown in FIGS.

<Example 7>
A semiconductor device 1 according to a seventh embodiment will be described. The same components as those of the first to sixth embodiments are denoted by the same reference numerals as those of the first to sixth embodiments, and the description thereof is omitted. FIG. 40 is a cross-sectional view of the semiconductor device 1 according to the seventh embodiment. The semiconductor device 1 includes a substrate 2, an adhesion layer 3, an organic insulating layer 4, wirings 5A and 5B, a plurality of wirings 6, a via 7, a land 8, a plurality of inorganic insulating films 9, a plurality of barrier films 10, and a plurality of inorganic insulations. A film 81 is provided. The inorganic insulating film 81 is made of, for example, SiO ₂ , A
inorganic oxide films such as l ₂ O ₃ , Ta ₂ O ₅ , Co ₃ O ₄ and WO ₃ , inorganic nitride films such as SiN and AlN,
It is an inorganic carbide film such as SiC, TiC, W ₂ C or the like. The inorganic insulating film 81 is an example of a third inorganic insulating film.

  An inorganic insulating film 81 is disposed between the organic insulating layer 4 and the wiring 5A. The inorganic insulating film 81 covers the side surface and the upper surface of the wiring 5A. The inorganic insulating film 81 covers the side surface and the upper surface of the wiring 5B. The inorganic insulating film 81 that covers the side surface and the upper surface of the wiring 5 </ b> B is connected to the inorganic insulating film 9 that covers the side surface of the via 7. That is, the inorganic insulating film 81 covering the side surface and the upper surface of the wiring 5B and the inorganic insulating film 9 covering the side surface of the via 7 are integrally formed.

  The inorganic insulating film 9 covers the side surface of the via 7 and the inorganic insulating film 81 covers the side surface and the upper surface of the wiring 5B, whereby the occurrence of electromigration at the connection portion between the wiring 5B and the via 7 can be suppressed. In addition, the inorganic insulating film 9 covers the side surface of the via 7 and the inorganic insulating film 81 covers the side surface and the upper surface of the wiring 5B, thereby suppressing the occurrence of electromigration at the edge of the wiring 5B and the edge of the via 7. it can.

<Method for Manufacturing Semiconductor Device 1 According to Example 7>
A method for manufacturing the semiconductor device 1 according to the seventh embodiment will be described. 41 to 44 are cross-sectional views illustrating an example of the manufacturing process of the semiconductor device 1 according to the seventh embodiment. In Example 7, the same process as the process of forming wirings 5A and 5B in Example 1 (see FIG. 3) is performed. Since this step has been described in the first embodiment, the description thereof is omitted in the seventh embodiment.

  After performing the process of forming the wirings 5A and 5B, as shown in FIG. 41, the inorganic insulating film 81 is formed on the adhesion layer 3 by CVD, for example. When the formation of the adhesion layer 3 is omitted, the inorganic insulating film 81 is formed on the substrate 2. The thickness of the inorganic insulating film 81 is, for example, not less than 100 nm and not more than 300 nm. The inorganic insulating film 81 covers the side surface and upper surface of the wiring 5A and the side surface and upper surface of the wiring 5B.

  Next, as shown in FIG. 42, after applying a photosensitive resist on the inorganic insulating film 81, the photosensitive resist is exposed using an exposure mask, and the photosensitive resist is developed using a developer. Thus, a resist pattern 82 is formed on the inorganic insulating film 81. The developer is, for example, TMAH.

  Next, as shown in FIG. 43, the inorganic insulating film 81 is partially removed by performing anisotropic etching using the resist pattern 82 as a mask. The portion of the inorganic insulating film 81 where the resist pattern 82 is not formed is removed. Next, as shown in FIG. 44, the resist pattern 82 is removed using a stripping solution. The stripping solution is, for example, NMP. After performing the process of removing the resist pattern 82, the same process as the process of forming the plurality of wirings 6, vias 7 and lands 8 from the process of forming the organic insulating layer 4 in Example 1 (see FIGS. 4 to 7). By performing the steps, the semiconductor device 1 shown in FIG. 40 is manufactured. In the step shown in FIG. 7, the inorganic insulating films 9 and 81 formed on the bottom surface of the groove 14 of the organic insulating layer 4 are removed by performing anisotropic etching using the resist pattern 15 as a mask.

  Example 7 may be applied to Examples 1 to 6 and Modifications 1 to 3 of Example 5. Therefore, the side surfaces and the upper surface of the wirings 5A and 5B included in the semiconductor device 1 according to the first to third embodiments, the fifth and sixth embodiments, and the first to third modifications of the fifth embodiment may be covered with the inorganic insulating film 81. Side surfaces and upper surfaces of the wirings 51 </ b> A and 51 </ b> B included in the semiconductor device 1 according to the fourth embodiment may be covered with the inorganic insulating film 81. The steps of forming the inorganic insulating film 81 on the side surfaces and the upper surface of the wirings 5A and 5B included in the semiconductor device 1 according to the first to sixth embodiments and the first to third modifications of the fifth embodiment are the same as those illustrated in FIGS. The same process as shown in FIG. The step of forming the inorganic insulating film 81 on the side surfaces and the upper surface of the wirings 51A and 51B provided in the semiconductor device 1 according to the fourth embodiment is performed by the same steps as the steps shown in FIGS.

  The semiconductor device 1 according to the first to seventh embodiments and the first to third modifications of the fifth embodiment may be applied to a semiconductor chip. For example, the semiconductor devices 1 according to the first to seventh embodiments and the first to third modifications of the fifth embodiment may be applied to an upper semiconductor chip and a lower semiconductor chip in a stacked semiconductor chip. For example, the semiconductor device 1 according to the first to seventh embodiments and the first to third modifications of the fifth embodiment may be applied to a semiconductor chip and a circuit board on which the semiconductor chip is mounted. For example, the semiconductor devices 1 according to the first to seventh embodiments and the first to third modifications of the fifth embodiment may be applied to the upper circuit board and the lower circuit board in the multilayer circuit board. For example, the semiconductor device 1 according to the first to seventh embodiments and the first to third modifications of the fifth embodiment includes a multilayer printed board, an LSI wiring board, a MEMS (Micro Electro Mechanical Systems), a chip package board, a wafer level package (WLP). You may apply to.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Board | substrate 3 Adhesion layer 4, 4A, 4B, 31, 31A, 31B, 71, 74 Organic insulating layer 5A, 5B, 6, 43, 51A, 51B, 53 Wiring 7, 44, 54 Via 8, 45, 55 Land 9, 72, 81 Inorganic insulating film 10 Barrier film 11, 12, 13, 14, 32, 33, 34, 35 Groove 15, 36, 62, 63, 64, 73, 82 Resist pattern 61 Organic insulating film

Claims (14)

A substrate,
An organic insulating layer formed on the substrate;
A conductor provided inside the organic insulating layer;
An inorganic insulating film disposed between the organic insulating layer and the conductor and covering at least a side surface of the conductor;
A semiconductor device comprising:   The semiconductor device according to claim 1, further comprising a barrier film disposed between the conductor and the inorganic insulating film.   The semiconductor device according to claim 1, further comprising a barrier film disposed between the organic insulating layer and the inorganic insulating film.   The semiconductor device according to claim 1, further comprising an organic insulating film disposed between the conductor and the inorganic insulating film.   The semiconductor device according to claim 1, wherein an upper surface of the conductor is covered with a second inorganic insulating film. Comprising wiring disposed under the conductor;
The conductor includes a via and a land,
The via is disposed on the wiring;
The land is disposed on the via;
6. The semiconductor device according to claim 1, wherein a part of an upper surface and a side surface of the wiring are covered with a third inorganic insulating film. Forming an organic insulating layer having a groove on the substrate;
Forming an inorganic insulating film on at least a side surface of the groove;
Forming a conductor in the groove;
A method for manufacturing a semiconductor device, comprising:   8. The method of manufacturing a semiconductor device according to claim 7, further comprising a step of forming a barrier film on an exposed surface of the inorganic insulating film in the groove before the step of forming the conductor. Before the step of forming the conductor, forming a barrier film on at least the side surface of the groove;
Forming the inorganic insulating film on the exposed surface of the barrier film in the groove;
The method of manufacturing a semiconductor device according to claim 7, comprising: Before the step of forming the conductor, forming an organic insulating film on the exposed surface of the inorganic insulating film in the groove;
Forming a barrier film on the exposed surface of the organic insulating film in the groove;
The method of manufacturing a semiconductor device according to claim 7, comprising:   The method of manufacturing a semiconductor device according to claim 7, further comprising a step of forming an organic insulating film on an exposed surface of the inorganic insulating film in the groove before the step of forming the conductor. 9. The method of manufacturing a semiconductor device according to claim 8, further comprising a step of forming an organic insulating film on an exposed surface of the barrier film in the groove.   The method for manufacturing a semiconductor device according to claim 9, further comprising a step of forming an organic insulating film on an exposed surface of the inorganic insulating film in the groove.   The method for manufacturing a semiconductor device according to claim 7, further comprising a step of forming a second inorganic insulating film on an upper surface of the conductor.

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