JP2016027675A5 - - Google Patents

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Publication number
JP2016027675A5
JP2016027675A5 JP2015219556A JP2015219556A JP2016027675A5 JP 2016027675 A5 JP2016027675 A5 JP 2016027675A5 JP 2015219556 A JP2015219556 A JP 2015219556A JP 2015219556 A JP2015219556 A JP 2015219556A JP 2016027675 A5 JP2016027675 A5 JP 2016027675A5
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JP
Japan
Prior art keywords
layer
gate
conductivity type
semiconductor device
electrode layer
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JP2015219556A
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English (en)
Japanese (ja)
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JP6177300B2 (ja
JP2016027675A (ja
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Priority to JP2015219556A priority Critical patent/JP6177300B2/ja
Priority claimed from JP2015219556A external-priority patent/JP6177300B2/ja
Publication of JP2016027675A publication Critical patent/JP2016027675A/ja
Publication of JP2016027675A5 publication Critical patent/JP2016027675A5/ja
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JP2015219556A 2013-03-31 2015-11-09 半導体装置 Active JP6177300B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015219556A JP6177300B2 (ja) 2013-03-31 2015-11-09 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013059785 2013-03-31
JPPCT/JP2013/059785 2013-03-31
JP2015219556A JP6177300B2 (ja) 2013-03-31 2015-11-09 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2015510084A Division JP5841693B2 (ja) 2013-03-31 2014-03-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2016027675A JP2016027675A (ja) 2016-02-18
JP2016027675A5 true JP2016027675A5 (https=) 2016-04-14
JP6177300B2 JP6177300B2 (ja) 2017-08-09

Family

ID=55352892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015219556A Active JP6177300B2 (ja) 2013-03-31 2015-11-09 半導体装置

Country Status (1)

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JP (1) JP6177300B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114039219A (zh) * 2022-01-10 2022-02-11 珠海华萃科技有限公司 一种电子元器件焊锡用防漂移结构
CN115207092B (zh) * 2022-09-09 2022-12-13 深圳芯能半导体技术有限公司 一种高可靠性的沟槽侧壁栅碳化硅mosfet及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5048273B2 (ja) * 2006-05-10 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置
WO2008069309A1 (ja) * 2006-12-07 2008-06-12 Shindengen Electric Manufacturing Co., Ltd. 半導体装置及びその製造方法

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