JP2016027635A5 - - Google Patents

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Publication number
JP2016027635A5
JP2016027635A5 JP2015128498A JP2015128498A JP2016027635A5 JP 2016027635 A5 JP2016027635 A5 JP 2016027635A5 JP 2015128498 A JP2015128498 A JP 2015128498A JP 2015128498 A JP2015128498 A JP 2015128498A JP 2016027635 A5 JP2016027635 A5 JP 2016027635A5
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JP
Japan
Prior art keywords
mist
substrate
susceptor
carrier gas
film forming
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JP2015128498A
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English (en)
Japanese (ja)
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JP2016027635A (ja
JP6627132B2 (ja
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Publication of JP2016027635A5 publication Critical patent/JP2016027635A5/ja
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JP2015128498A 2014-06-27 2015-06-26 成膜装置および成膜方法 Active JP6627132B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015128498A JP6627132B2 (ja) 2014-06-27 2015-06-26 成膜装置および成膜方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014132215 2014-06-27
JP2014132215 2014-06-27
JP2015128498A JP6627132B2 (ja) 2014-06-27 2015-06-26 成膜装置および成膜方法

Publications (3)

Publication Number Publication Date
JP2016027635A JP2016027635A (ja) 2016-02-18
JP2016027635A5 true JP2016027635A5 (enExample) 2018-08-09
JP6627132B2 JP6627132B2 (ja) 2020-01-08

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ID=55352872

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JP2015128498A Active JP6627132B2 (ja) 2014-06-27 2015-06-26 成膜装置および成膜方法

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JP (1) JP6627132B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202235663A (zh) 2021-03-02 2022-09-16 日商信越化學工業股份有限公司 製膜方法、製膜裝置及積層體

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61186288A (ja) * 1985-02-14 1986-08-19 Nec Corp 炭化珪素化合物半導体の気相エピタキシヤル成長装置
JPH02181938A (ja) * 1989-01-07 1990-07-16 Fujitsu Ltd 気相エピタキシャル成長装置
JPH03132014A (ja) * 1989-10-18 1991-06-05 Hitachi Ltd Ｍｏｃｖｄ装置
JPH03171718A (ja) * 1989-11-30 1991-07-25 Furukawa Electric Co Ltd:The 気相成長装置
JPH08288224A (ja) * 1995-04-17 1996-11-01 Furukawa Electric Co Ltd:The 気相成長装置
US6159287A (en) * 1999-05-07 2000-12-12 Cbl Technologies, Inc. Truncated susceptor for vapor-phase deposition
WO2008121793A1 (en) * 2007-03-30 2008-10-09 The Penn State Research Foundation Mist fabrication of quantum dot devices
JP5793732B2 (ja) * 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP5397794B1 (ja) * 2013-06-04 2014-01-22 Ｒｏｃａ株式会社 酸化物結晶薄膜の製造方法

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