JP6627132B2 - 成膜装置および成膜方法 - Google Patents
成膜装置および成膜方法 Download PDFInfo
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- JP6627132B2 JP6627132B2 JP2015128498A JP2015128498A JP6627132B2 JP 6627132 B2 JP6627132 B2 JP 6627132B2 JP 2015128498 A JP2015128498 A JP 2015128498A JP 2015128498 A JP2015128498 A JP 2015128498A JP 6627132 B2 JP6627132 B2 JP 6627132B2
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- Prior art keywords
- mist
- substrate
- susceptor
- carrier gas
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 13
- 239000003595 mist Substances 0.000 claims description 169
- 239000000758 substrate Substances 0.000 claims description 91
- 239000012159 carrier gas Substances 0.000 claims description 59
- 239000002994 raw material Substances 0.000 claims description 27
- 230000001133 acceleration Effects 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 95
- 238000005755 formation reaction Methods 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 0 *#CC(C1)C2C1CCCC2 Chemical compound *#CC(C1)C2C1CCCC2 0.000 description 1
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015128498A JP6627132B2 (ja) | 2014-06-27 | 2015-06-26 | 成膜装置および成膜方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014132215 | 2014-06-27 | ||
| JP2014132215 | 2014-06-27 | ||
| JP2015128498A JP6627132B2 (ja) | 2014-06-27 | 2015-06-26 | 成膜装置および成膜方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016027635A JP2016027635A (ja) | 2016-02-18 |
| JP2016027635A5 JP2016027635A5 (enExample) | 2018-08-09 |
| JP6627132B2 true JP6627132B2 (ja) | 2020-01-08 |
Family
ID=55352872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015128498A Active JP6627132B2 (ja) | 2014-06-27 | 2015-06-26 | 成膜装置および成膜方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6627132B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM633563U (zh) * | 2021-03-02 | 2022-11-01 | 日商信越化學工業股份有限公司 | 製膜系統及製膜裝置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61186288A (ja) * | 1985-02-14 | 1986-08-19 | Nec Corp | 炭化珪素化合物半導体の気相エピタキシヤル成長装置 |
| JPH02181938A (ja) * | 1989-01-07 | 1990-07-16 | Fujitsu Ltd | 気相エピタキシャル成長装置 |
| JPH03132014A (ja) * | 1989-10-18 | 1991-06-05 | Hitachi Ltd | Ｍｏｃｖｄ装置 |
| JPH03171718A (ja) * | 1989-11-30 | 1991-07-25 | Furukawa Electric Co Ltd:The | 気相成長装置 |
| JPH08288224A (ja) * | 1995-04-17 | 1996-11-01 | Furukawa Electric Co Ltd:The | 気相成長装置 |
| US6159287A (en) * | 1999-05-07 | 2000-12-12 | Cbl Technologies, Inc. | Truncated susceptor for vapor-phase deposition |
| US8222061B2 (en) * | 2007-03-30 | 2012-07-17 | The Penn State Research Foundation | Mist fabrication of quantum dot devices |
| JP5793732B2 (ja) * | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| JP5397794B1 (ja) * | 2013-06-04 | 2014-01-22 | Ｒｏｃａ株式会社 | 酸化物結晶薄膜の製造方法 |
-
2015
- 2015-06-26 JP JP2015128498A patent/JP6627132B2/ja active Active
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| Publication number | Publication date |
|---|---|
| JP2016027635A (ja) | 2016-02-18 |
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