JP6404703B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- JP6404703B2 JP6404703B2 JP2014256951A JP2014256951A JP6404703B2 JP 6404703 B2 JP6404703 B2 JP 6404703B2 JP 2014256951 A JP2014256951 A JP 2014256951A JP 2014256951 A JP2014256951 A JP 2014256951A JP 6404703 B2 JP6404703 B2 JP 6404703B2
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- 239000000758 substrate Substances 0.000 title claims description 289
- 238000003672 processing method Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 56
- 230000007246 mechanism Effects 0.000 claims description 50
- 230000001681 protective effect Effects 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000005507 spraying Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 11
- 238000011144 upstream manufacturing Methods 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 344
- 239000012495 reaction gas Substances 0.000 description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 26
- 229910002601 GaN Inorganic materials 0.000 description 25
- 239000002994 raw material Substances 0.000 description 23
- 239000000203 mixture Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 239000010453 quartz Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000007664 blowing Methods 0.000 description 5
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910021478 group 5 element Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Description
基板を処理する処理室と、
前記処理室内で前記基板を支持する基板支持部と、
前記処理室内に供給する処理ガス供給部と、
前記処理ガス供給部から供給された処理ガスが吹付けられる第1の位置と、前記処理ガス供給部から供給された処理ガスが吹付けられない第2の位置と、の間で、前記処理室内で前記基板支持部を移動させる移動機構と、を備える基板処理装置が提供される。
処理室内で基板を処理する工程を有し、
前記基板を処理する工程では、
処理ガス供給部から処理室内に供給される処理ガスが吹き付けられる第1の位置にある前記基板に、前記処理ガス供給部から処理ガスを吹き付けて基板の処理を行い、
前記処理ガス供給部から前記処理室内に供給される処理ガスが吹き付けられない第2の位置に、前記移動機構により前記基板を支持した前記基板支持部を移動させることで処理を終了する基板処理方法が提供される。
本発明の実施形態の説明に先立ち、本発明者等が得た知見について説明する。基板処理装置として、例えば高温雰囲気下で金属原料が溶融することで生成される液体原料と反応ガスとを反応させることで、基板の処理を行う処理ガスを生成する処理ガス生成器を備える基板処理装置がある。この基板処理装置では、処理ガス生成器内で処理ガスを生成しつつ、処理ガス生成器から処理室内に処理ガスを供給し、処理室内の基板に処理ガスを吹付けることで、基板の処理が行われる。
(1)基板処理装置の構成
以下に、本発明の一実施形態にかかる基板処理装置について、主に図1を参照しながら説明する。本実施形態では、基板処理装置がハイドライド気相成長装置(Hydride Vapor Phase Epitaxy(HVPE)装置)である場合を例に説明する。
次に、本実施形態にかかる半導体製造工程の一工程として実施される基板処理工程について説明する。かかる工程は、上述の基板処理装置10により実施される。ここでは、HVPE法により、基板100上にGaN膜を成膜する例について説明する。
本実施形態によれば、以下に示す1つまたは複数の効果を奏する。
以上、本発明の一実施形態を具体的に説明したが、本発明は上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。
以下に、本発明の好ましい態様について付記する。
本発明の一態様によれば、
基板を処理する処理室と、
前記処理室内で前記基板を支持する基板支持部と、
前記処理室内に供給する処理ガス供給部と、
前記処理ガス供給部から供給された処理ガスが吹付けられる第1の位置と、前記処理ガス供給部から供給された処理ガスが吹付けられない第2の位置と、の間で、前記処理室内で前記基板支持部を移動させる移動機構と、を備える基板処理装置が提供される。
付記1の基板処理装置であって、好ましくは、
前記移動機構は、
前記基板の処理が終了した後、前記処理ガス供給部から前記処理室内への処理ガスの供給が停止される前に、前記基板を支持した前記基板支持部を前記第2の位置に移動させる。
付記1又は2の基板処理装置であって、好ましくは、
前記移動機構は、
前記基板の処理が終了した後、前記処理ガス供給部から供給される処理ガスの供給条件が変わる前に、前記基板を支持した前記基板支持部を前記第2の位置に移動させる。
付記1ないし3のいずれかの基板処理装置であって、好ましくは、
前記移動機構により、前記基板を支持した前記基板支持部を前記第2の位置に移動させることで、前記基板の処理を停止させる。
付記1ないし4のいずれかの基板処理装置であって、好ましくは、
前記移動機構を制御する制御部を備える。
付記1ないし5のいずれかの基板処理装置であって、好ましくは、
前記処理ガス供給部は、金属原料と反応ガスとを反応させることで処理ガスを生成する処理ガス生成器を備えている。
付記6の基板処理装置であって、好ましくは、
前記金属原料はIII族元素を含む金属原料であり、
前記処理ガス生成器内で生成される処理ガスは、III族元素含有ガスである。
付記6又は7のいずれかの基板処理装置であって、好ましくは、
前記処理ガス供給部は、処理ガスとしてV族元素含有ガスを供給するV族元素含有ガス供給部を備えている。
付記1ないし8のいずれかの基板処理装置であって、好ましくは、
前記第2の位置に移動した処理済の前記基板に、処理済の前記基板の表面を保護する保護ガスを吹付ける保護ガス吹付部が設けられている。
付記1ないし9のいずれかの基板処理装置であって、好ましくは、
前記基板の処理として、前記基板上に膜を形成する処理が行われる場合、前記膜中に不純物をドープするドーピングガスを前記処理室内に供給するドーピングガス供給部が設けられている。
本発明の他の態様によれば、
処理室内で基板を処理する工程を有し、
前記基板を処理する工程では、
処理ガス供給部から処理室内に供給される処理ガスが吹き付けられる第1の位置にある前記基板に、前記処理ガス供給部から処理ガスを吹き付けて基板の処理を行い、
前記処理ガス供給部から前記処理室内に供給される処理ガスが吹き付けられない第2の位置に、前記移動機構により前記基板を支持した前記基板支持部を移動させることで処理を終了する基板処理方法が提供される。
付記11の基板処理方法であって、好ましくは、
保護ガス吹付部から、前記第2の位置に移動した処理済の前記基板の表面を保護する保護ガスを吹付ける工程を有する。
12 処理室
14 処理ガス生成器
20 サセプタ(基板支持部)
21 移動機構
Claims (7)
- 基板を処理する処理室と、
前記処理室内で前記基板を支持する基板支持部と、
前記処理室内に供給する処理ガス供給部と、
前記処理ガス供給部から供給された処理ガスが吹付けられる第1の位置と、前記処理ガス供給部から供給された処理ガスが吹付けられない第2の位置と、の間で、前記処理室内で前記基板支持部を移動させる移動機構と、
前記第2の位置に移動した処理済の前記基板に、処理済の前記基板の表面を保護するとともに、前記処理室内に残留する処理ガスが処理済の前記基板に供給されることを抑制する保護ガスを吹付ける保護ガス吹付部と、を備える
基板処理装置。 - 基板を処理する処理室と、
前記処理室内で前記基板を支持する基板支持部と、
前記処理室内に供給する処理ガス供給部と、
前記処理ガス供給部から供給された処理ガスが吹付けられる第1の位置と、前記処理ガス供給部から供給された処理ガスが吹付けられない第2の位置と、の間で、前記処理室内で前記基板支持部を移動させる移動機構と、を備え、
前記第2の位置は、前記処理室内における前記処理ガス供給部が有するガス供給管のガス供給口よりも上流側の位置である
基板処理装置。 - 前記移動機構は、
前記基板の処理が終了した後、前記処理ガス供給部から前記処理室内への処理ガスの供給が停止される前に、前記基板を支持した前記基板支持部を前記第2の位置に移動させる
請求項1または2に記載の基板処理装置。 - 前記移動機構は、
前記基板の処理が終了した後、前記処理ガス供給部から供給される処理ガスの供給条件が変わる前に、前記基板を支持した前記基板支持部を前記第2の位置に移動させる
請求項1〜3のいずれか1項に記載の基板処理装置。 - 前記処理ガス供給部は、金属原料と反応ガスとを反応させることで処理ガスを生成する処理ガス生成器を備えている
請求項1〜4のいずれか1項に記載の基板処理装置。 - 前記基板の処理として、前記基板上に膜を形成する処理が行われる場合、前記膜中に不純物をドープするドーピングガスを前記処理室内に供給するドーピングガス供給部が設けられている
請求項1〜5のいずれか1項に記載の基板処理装置。 - 処理室内で基板を処理する工程を有し、
前記基板を処理する工程では、処理ガス供給部から処理室内に供給される処理ガスが吹き付けられる第1の位置にある前記基板に、前記処理ガス供給部から処理ガスを吹き付けて基板の処理を行い、
前記処理ガス供給部から前記処理室内に供給される処理ガスが吹き付けられない第2の位置に、移動機構により前記基板を支持した基板支持部を移動させることで処理を終了し、
保護ガス吹付部から、前記第2の位置に移動した処理済の前記基板に、処理済の前記基板の表面を保護するとともに、前記処理室内に残留する処理ガスが処理済の前記基板に供給されることを抑制する保護ガスを吹付ける
基板処理方法。
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