JP2016027635A5 - - Google Patents
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- JP2016027635A5 JP2016027635A5 JP2015128498A JP2015128498A JP2016027635A5 JP 2016027635 A5 JP2016027635 A5 JP 2016027635A5 JP 2015128498 A JP2015128498 A JP 2015128498A JP 2015128498 A JP2015128498 A JP 2015128498A JP 2016027635 A5 JP2016027635 A5 JP 2016027635A5
- Authority
- JP
- Japan
- Prior art keywords
- mist
- substrate
- susceptor
- carrier gas
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003595 mist Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 26
- 239000012159 carrier gas Substances 0.000 claims description 17
- 230000002093 peripheral Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
Description
また、本発明は、
(2) 前記供給管内に、または所望により前記供給管に併設されている成長室内に、前記基板を保持するサセプタを備え、
前記サセプタが、ミストを前記基板まで加速させるためのミスト加速部を備えていることを特徴とする前記(1)記載の成膜装置、
(3) 前記サセプタが占めるサセプタ領域と、前記基板領域と、未反応のミストを排出する排出領域とに分けられる前記供給管または前記成長室内の断面において、前記サセプタ領域と前記基板との総面積が、前記排出領域の面積よりも大きいことを特徴とする前記(2)記載の成膜装置、
(4) 前記サセプタの外周形状の全部または一部が、前記供給管または前記成長室の内周に沿って略同一となるような形状である前記(2)または(3)に記載の成膜装置、
(5) 前記供給管内に前記サセプタを備え、前記サセプタの外周形状の全部または一部が、前記供給管の内周に沿って略同一となるような略円状である前記(1)〜(4)のいずれかに記載の成膜装置、
(6) 前記サセプタの前記基板側表面の外周形状が略半円状である前記(5)記載の成膜装置、
(7) 前記サセプタが前記基板を傾斜させて保持する手段を有していることを特徴とする前記(2)〜(6)のいずれかに記載の成膜装置、
(8) 前記基板の傾斜角が5°〜60°である前記(7)記載の成膜装置、
(9) 前記サセプタが前記基板を埋め込んで保持する手段を有する前記(2)〜(8)のいずれかに記載の成膜装置、
に関する。
The present invention also provides:
(2) A susceptor for holding the substrate is provided in the supply pipe or in a growth chamber provided in the supply pipe if desired.
Said susceptor, said characterized in that it comprises a mist accelerator for accelerating mist to said substrate (1) film-forming apparatus according,
(3) The total area of the susceptor region and the substrate in a cross section of the supply pipe or the growth chamber divided into a susceptor region occupied by the susceptor, the substrate region, and a discharge region for discharging unreacted mist. but the film forming apparatus before SL (2) Symbol mounting which being greater than the area of the discharge region,
(4) The film formation according to ( 2 ) or (3 ) , wherein all or part of the outer peripheral shape of the susceptor has a shape that is substantially the same along the inner periphery of the supply pipe or the growth chamber. apparatus,
(5) provided with the susceptor to the supply pipe, all or part of the outer peripheral shape of the susceptor, said a substantially circular such that substantially the same along the inner periphery of the supply pipe (1) to ( 4) The film forming apparatus according to any one of
(6) the peripheral shape of the substrate-side surface of the susceptor is substantially semicircular (5) film formation apparatus according,
(7) film deposition apparatus according to any one of the said susceptor, characterized in that it comprises a means for holding by tilting the substrate (2) to (6),
(8) The film forming apparatus according to (7), wherein an inclination angle of the substrate is 5 ° to 60 °,
(9) film deposition apparatus according to any one of the above said susceptor has a means for holding embed the substrate (2) to (8),
About.
また、本発明は、
(10) ミスト加速手段が、キャリアガスによって搬送されているミストに対し、さらに、0.1〜10m/s2の加速度を付与する前記(1)〜(9)のいずれかに記載の成膜装置、
(11) 加速させるミストの流路方向が、前記基板に対して、平行または略平行である前記(1)〜(10)のいずれかに記載の成膜装置、
(12) 原料を霧化して発生したミストをキャリアガスによって基板上に搬送して成膜する成膜方法であって、
前記原料を霧化してミストを発生させる工程と、
キャリアガスを供給するキャリアガス供給工程と、
前記ミスト発生器で発生したミストをキャリアガスによって前記基板へ供給するミスト供給工程と、
を含み、
前記ミスト供給工程にて、キャリアガスによって搬送されているミストを基板までさらに加速させることを特徴とする成膜方法、
(13) 前記(12)記載の成膜方法によって形成された膜、
に関する。
The present invention also provides:
(10) The film formation according to any one of (1) to (9), wherein the mist acceleration unit further applies an acceleration of 0.1 to 10 m / s 2 to the mist conveyed by the carrier gas. apparatus,
(11) The film forming apparatus according to any one of (1) to (10), wherein a flow path direction of the mist to be accelerated is parallel or substantially parallel to the substrate.
(12) A film forming method for forming a film by transporting a mist generated by atomizing a raw material onto a substrate by a carrier gas,
A step of atomizing the raw material to generate mist;
A carrier gas supply step for supplying a carrier gas;
A mist supply step of supplying the mist generated by the mist generator to the substrate by a carrier gas;
Including
In the mist supply step, the mist transported by carrier gas is further accelerated to the substrate,
(13) A film formed by the film forming method according to (12),
About.
Claims (13)
前記原料を霧化してミストを発生させるミスト発生器と、
前記キャリアガスを供給するキャリアガス供給手段と、
前記ミスト発生器で発生したミストを前記キャリアガスによって前記基板へ供給する供給管と、
を備え、
前記キャリアガスによって搬送されているミストを前記基板までさらに加速させるミスト加速手段を備えていることを特徴とする成膜装置。 A film forming apparatus for forming a film by conveying a mist made of a raw material onto a substrate with a carrier gas,
A mist generator that atomizes the raw material to generate mist;
A carrier gas supply means for supplying the carrier gas;
A supply pipe for supplying the mist generated by the mist generator to the substrate by the carrier gas;
With
A film forming apparatus comprising mist accelerating means for further accelerating the mist conveyed by the carrier gas to the substrate.
前記サセプタが、ミストを前記基板まで加速させるためのミスト加速部を備えていることを特徴とする請求項1記載の成膜装置。 A susceptor for holding the substrate is provided in the supply pipe or in a growth chamber attached to the supply pipe as required.
The susceptor film forming apparatus according to claim 1, characterized in that it comprises a mist accelerator for accelerating mist to the substrate.
前記原料を霧化してミストを発生させる工程と、
前記キャリアガスを供給するキャリアガス供給工程と、
前記ミスト発生器で発生したミストをキャリアガスによって前記基板へ供給するミスト供給工程と、
を含み、
前記ミスト供給工程にて、前記キャリアガスによって搬送されているミストを前記基板までさらに加速させることを特徴とする成膜方法。 A film forming method for forming a film by transporting a mist generated by atomizing a raw material onto a substrate by a carrier gas,
A step of atomizing the raw material to generate mist;
A carrier gas supply step for supplying the carrier gas;
A mist supply step of supplying the mist generated by the mist generator to the substrate by a carrier gas;
Including
In the mist supply step, the mist transported by the carrier gas is further accelerated to the substrate.
A film formed by the film forming method according to claim 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015128498A JP6627132B2 (en) | 2014-06-27 | 2015-06-26 | Film forming apparatus and film forming method |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014132215 | 2014-06-27 | ||
JP2014132215 | 2014-06-27 | ||
JP2015128498A JP6627132B2 (en) | 2014-06-27 | 2015-06-26 | Film forming apparatus and film forming method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016027635A JP2016027635A (en) | 2016-02-18 |
JP2016027635A5 true JP2016027635A5 (en) | 2018-08-09 |
JP6627132B2 JP6627132B2 (en) | 2020-01-08 |
Family
ID=55352872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015128498A Active JP6627132B2 (en) | 2014-06-27 | 2015-06-26 | Film forming apparatus and film forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6627132B2 (en) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61186288A (en) * | 1985-02-14 | 1986-08-19 | Nec Corp | Apparatus for vapor-phase epitaxial growth of silicon carbide compound semiconductor |
JPH02181938A (en) * | 1989-01-07 | 1990-07-16 | Fujitsu Ltd | Vapor phase epitaxial growth apparatus |
JPH03132014A (en) * | 1989-10-18 | 1991-06-05 | Hitachi Ltd | Mocvd apparatus |
JPH03171718A (en) * | 1989-11-30 | 1991-07-25 | Furukawa Electric Co Ltd:The | Vapor phase growth device |
JPH08288224A (en) * | 1995-04-17 | 1996-11-01 | Furukawa Electric Co Ltd:The | Vapor growth apparatus |
US6159287A (en) * | 1999-05-07 | 2000-12-12 | Cbl Technologies, Inc. | Truncated susceptor for vapor-phase deposition |
US8222061B2 (en) * | 2007-03-30 | 2012-07-17 | The Penn State Research Foundation | Mist fabrication of quantum dot devices |
JP5793732B2 (en) * | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | Highly crystalline conductive α-type gallium oxide thin film doped with dopant and method for producing the same |
JP5397794B1 (en) * | 2013-06-04 | 2014-01-22 | Roca株式会社 | Method for producing oxide crystal thin film |
-
2015
- 2015-06-26 JP JP2015128498A patent/JP6627132B2/en active Active
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