JP2016012713A - 樹脂フィルム、半導体装置および半導体装置の製造方法 - Google Patents

樹脂フィルム、半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP2016012713A
JP2016012713A JP2015004623A JP2015004623A JP2016012713A JP 2016012713 A JP2016012713 A JP 2016012713A JP 2015004623 A JP2015004623 A JP 2015004623A JP 2015004623 A JP2015004623 A JP 2015004623A JP 2016012713 A JP2016012713 A JP 2016012713A
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Prior art keywords
resin film
film layer
resin
resin layer
semiconductor device
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Pending
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JP2015004623A
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English (en)
Japanese (ja)
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JP2016012713A5 (enExample
Inventor
眞行 美野
Masayuki Mino
眞行 美野
河野　務
Tsutomu Kono
務 河野
蔵渕　和彦
Kazuhiko Kurabuchi
和彦 蔵渕
宏治 濱口
Koji Hamaguchi
宏治 濱口
正也 鳥羽
Masaya Toba
正也 鳥羽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
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Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2015004623A priority Critical patent/JP2016012713A/ja
Publication of JP2016012713A publication Critical patent/JP2016012713A/ja
Publication of JP2016012713A5 publication Critical patent/JP2016012713A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
  • Sealing Material Composition (AREA)
JP2015004623A 2014-06-05 2015-01-14 樹脂フィルム、半導体装置および半導体装置の製造方法 Pending JP2016012713A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015004623A JP2016012713A (ja) 2014-06-05 2015-01-14 樹脂フィルム、半導体装置および半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014116766 2014-06-05
JP2014116766 2014-06-05
JP2015004623A JP2016012713A (ja) 2014-06-05 2015-01-14 樹脂フィルム、半導体装置および半導体装置の製造方法

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JP2016012713A true JP2016012713A (ja) 2016-01-21
JP2016012713A5 JP2016012713A5 (enExample) 2017-04-13

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117842A (ja) * 2015-12-21 2017-06-29 京セラ株式会社 電子部品及び電子部品の製造方法
WO2018181761A1 (ja) * 2017-03-31 2018-10-04 日立化成株式会社 封止フィルム、電子部品装置の製造方法及び電子部品装置
JP2020068237A (ja) * 2018-10-22 2020-04-30 新光電気工業株式会社 配線基板
CN111370337A (zh) * 2020-03-18 2020-07-03 深圳杰微芯片科技有限公司 降低封装翘曲方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823005A (ja) * 1993-09-14 1996-01-23 Toshiba Corp 樹脂封止型半導体装置の製造方法、樹脂封止型半導体装置及び封止用樹脂シート
JP2011187877A (ja) * 2010-03-11 2011-09-22 Panasonic Corp 半導体装置及びその製造方法
JP2014056924A (ja) * 2012-09-12 2014-03-27 Hitachi Chemical Co Ltd 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれらにより得られる半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823005A (ja) * 1993-09-14 1996-01-23 Toshiba Corp 樹脂封止型半導体装置の製造方法、樹脂封止型半導体装置及び封止用樹脂シート
JP2011187877A (ja) * 2010-03-11 2011-09-22 Panasonic Corp 半導体装置及びその製造方法
JP2014056924A (ja) * 2012-09-12 2014-03-27 Hitachi Chemical Co Ltd 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれらにより得られる半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117842A (ja) * 2015-12-21 2017-06-29 京セラ株式会社 電子部品及び電子部品の製造方法
WO2018181761A1 (ja) * 2017-03-31 2018-10-04 日立化成株式会社 封止フィルム、電子部品装置の製造方法及び電子部品装置
CN110462818A (zh) * 2017-03-31 2019-11-15 日立化成株式会社 密封膜、电子部件装置的制造方法及电子部件装置
KR20190132401A (ko) * 2017-03-31 2019-11-27 히타치가세이가부시끼가이샤 봉지 필름, 전자 부품 장치의 제조 방법 및 전자 부품 장치
JPWO2018181761A1 (ja) * 2017-03-31 2020-02-20 日立化成株式会社 封止フィルム、電子部品装置の製造方法及び電子部品装置
JP7115469B2 (ja) 2017-03-31 2022-08-09 昭和電工マテリアルズ株式会社 封止フィルム、電子部品装置の製造方法及び電子部品装置
KR102440947B1 (ko) * 2017-03-31 2022-09-05 쇼와덴코머티리얼즈가부시끼가이샤 봉지 필름, 전자 부품 장치의 제조 방법 및 전자 부품 장치
CN110462818B (zh) * 2017-03-31 2023-12-26 株式会社力森诺科 密封膜、电子部件装置的制造方法及电子部件装置
JP2020068237A (ja) * 2018-10-22 2020-04-30 新光電気工業株式会社 配線基板
JP7211757B2 (ja) 2018-10-22 2023-01-24 新光電気工業株式会社 配線基板
CN111370337A (zh) * 2020-03-18 2020-07-03 深圳杰微芯片科技有限公司 降低封装翘曲方法

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