JP2015532034A5 - - Google Patents

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Publication number
JP2015532034A5
JP2015532034A5 JP2015526571A JP2015526571A JP2015532034A5 JP 2015532034 A5 JP2015532034 A5 JP 2015532034A5 JP 2015526571 A JP2015526571 A JP 2015526571A JP 2015526571 A JP2015526571 A JP 2015526571A JP 2015532034 A5 JP2015532034 A5 JP 2015532034A5
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JP
Japan
Prior art keywords
transistor
control circuit
fault protection
source
electrically connected
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JP2015526571A
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English (en)
Japanese (ja)
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JP5917775B2 (ja
JP2015532034A (ja
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Priority claimed from US13/570,101 external-priority patent/US9088256B2/en
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Publication of JP2015532034A5 publication Critical patent/JP2015532034A5/ja
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JP2015526571A 2012-08-08 2013-07-30 増幅器故障保護のための装置および方法 Active JP5917775B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/570,101 US9088256B2 (en) 2012-08-08 2012-08-08 Apparatus and methods for amplifier fault protection
US13/570,101 2012-08-08
PCT/US2013/052711 WO2014025574A1 (en) 2012-08-08 2013-07-30 Apparatus and methods for amplifier fault protection

Publications (3)

Publication Number Publication Date
JP2015532034A JP2015532034A (ja) 2015-11-05
JP2015532034A5 true JP2015532034A5 (enExample) 2016-04-21
JP5917775B2 JP5917775B2 (ja) 2016-05-18

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JP2015526571A Active JP5917775B2 (ja) 2012-08-08 2013-07-30 増幅器故障保護のための装置および方法

Country Status (5)

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US (1) US9088256B2 (enExample)
JP (1) JP5917775B2 (enExample)
KR (1) KR101726699B1 (enExample)
DE (1) DE102013108302B4 (enExample)
WO (1) WO2014025574A1 (enExample)

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US12032014B2 (en) 2019-09-09 2024-07-09 Analog Devices International Unlimited Company Semiconductor device configured for gate dielectric monitoring
DE102020123481A1 (de) 2019-09-09 2021-03-11 Analog Devices International Unlimited Company Halbleitervorrichtung, die zur gate-dielektrikum-überwachung ausgebildet ist
US11552190B2 (en) 2019-12-12 2023-01-10 Analog Devices International Unlimited Company High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region
US11595036B2 (en) 2020-04-30 2023-02-28 Analog Devices, Inc. FinFET thyristors for protecting high-speed communication interfaces
US11499995B2 (en) 2020-10-26 2022-11-15 Analog Devices, Inc. Leakage compensation technique for current sensor
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