KR101726699B1 - 증폭기 결함 보호 장치 및 방법 - Google Patents
증폭기 결함 보호 장치 및 방법 Download PDFInfo
- Publication number
- KR101726699B1 KR101726699B1 KR1020157002780A KR20157002780A KR101726699B1 KR 101726699 B1 KR101726699 B1 KR 101726699B1 KR 1020157002780 A KR1020157002780 A KR 1020157002780A KR 20157002780 A KR20157002780 A KR 20157002780A KR 101726699 B1 KR101726699 B1 KR 101726699B1
- Authority
- KR
- South Korea
- Prior art keywords
- transistor
- control circuit
- voltage
- signal pin
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims description 9
- 230000007547 defect Effects 0.000 claims abstract description 160
- 238000001514 detection method Methods 0.000 claims description 70
- 230000001052 transient effect Effects 0.000 claims description 27
- 230000004044 response Effects 0.000 claims description 21
- 230000003071 parasitic effect Effects 0.000 claims description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000002950 deficient Effects 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 15
- 230000000903 blocking effect Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
- 239000013256 coordination polymer Substances 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 2
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- 230000001976 improved effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude
- H03G11/08—Limiting rate of change of amplitude
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/30—Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R17/00—Measuring arrangements involving comparison with a reference value, e.g. bridge
- G01R17/02—Arrangements in which the value to be measured is automatically compared with a reference value
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/24—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to undervoltage or no-voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/426—Indexing scheme relating to amplifiers the amplifier comprising circuitry for protection against overload
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Emergency Protection Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/570,101 | 2012-08-08 | ||
| US13/570,101 US9088256B2 (en) | 2012-08-08 | 2012-08-08 | Apparatus and methods for amplifier fault protection |
| PCT/US2013/052711 WO2014025574A1 (en) | 2012-08-08 | 2013-07-30 | Apparatus and methods for amplifier fault protection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150034752A KR20150034752A (ko) | 2015-04-03 |
| KR101726699B1 true KR101726699B1 (ko) | 2017-04-13 |
Family
ID=49999312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157002780A Active KR101726699B1 (ko) | 2012-08-08 | 2013-07-30 | 증폭기 결함 보호 장치 및 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9088256B2 (enExample) |
| JP (1) | JP5917775B2 (enExample) |
| KR (1) | KR101726699B1 (enExample) |
| DE (1) | DE102013108302B4 (enExample) |
| WO (1) | WO2014025574A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013206412A1 (de) * | 2013-04-11 | 2014-10-16 | Ifm Electronic Gmbh | Schutzschaltung für eine Signalausgangs-Stufe |
| US11403170B2 (en) * | 2014-08-05 | 2022-08-02 | Macronix International Co., Ltd. | Method and device for monitoring data error status in a memory |
| US10068894B2 (en) | 2015-01-12 | 2018-09-04 | Analog Devices, Inc. | Low leakage bidirectional clamps and methods of forming the same |
| DE102015207783B4 (de) * | 2015-04-15 | 2019-01-31 | Continental Automotive Gmbh | Gegen Überspannung geschütztes elektronisches Steuergerät |
| US10158029B2 (en) | 2016-02-23 | 2018-12-18 | Analog Devices, Inc. | Apparatus and methods for robust overstress protection in compound semiconductor circuit applications |
| US10199369B2 (en) | 2016-03-04 | 2019-02-05 | Analog Devices, Inc. | Apparatus and methods for actively-controlled transient overstress protection with false condition shutdown |
| US10177566B2 (en) | 2016-06-21 | 2019-01-08 | Analog Devices, Inc. | Apparatus and methods for actively-controlled trigger and latch release thyristor |
| US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
| US9948242B2 (en) * | 2016-08-02 | 2018-04-17 | Apex Microtechnology, Inc. | Selectable current limiter circuit |
| US10861845B2 (en) * | 2016-12-06 | 2020-12-08 | Analog Devices, Inc. | Active interface resistance modulation switch |
| US10319714B2 (en) | 2017-01-24 | 2019-06-11 | Analog Devices, Inc. | Drain-extended metal-oxide-semiconductor bipolar switch for electrical overstress protection |
| US10404059B2 (en) | 2017-02-09 | 2019-09-03 | Analog Devices, Inc. | Distributed switches to suppress transient electrical overstress-induced latch-up |
| DE102017208170A1 (de) * | 2017-05-15 | 2018-11-15 | Pepperl + Fuchs Gmbh | Verfahren zur Überwachung eines Betriebs einer binären Schnittstelle und entsprechende binäre Schnittstelle |
| DE102017208171B3 (de) | 2017-05-15 | 2018-10-11 | Pepperl + Fuchs Gmbh | Verfahren zur Überwachung eines Betriebs einer binären Schnittstelle und entsprechende binäre Schnittstelle |
| US10608431B2 (en) | 2017-10-26 | 2020-03-31 | Analog Devices, Inc. | Silicon controlled rectifier dynamic triggering and shutdown via control signal amplification |
| CN109787597B (zh) * | 2017-11-13 | 2024-07-26 | 恩智浦有限公司 | 负载开关栅极保护电路 |
| US10581423B1 (en) | 2018-08-17 | 2020-03-03 | Analog Devices Global Unlimited Company | Fault tolerant low leakage switch |
| CN109066577B (zh) * | 2018-09-14 | 2024-02-20 | 深圳众城卓越科技有限公司 | 一种抱闸驱动电路 |
| DE102018126913A1 (de) | 2018-10-29 | 2020-04-30 | Knorr-Bremse Systeme für Nutzfahrzeuge GmbH | Überspannungsschutzschaltung für ein Steuergerät für ein Fahrzeug, Steuergerät für ein Fahrzeug und Verfahren zum Testen einer Überspannungsschutzschaltung für ein Steuergerät für ein Fahrzeug |
| US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
| US11004849B2 (en) | 2019-03-06 | 2021-05-11 | Analog Devices, Inc. | Distributed electrical overstress protection for large density and high data rate communication applications |
| DE102020111863A1 (de) | 2019-05-03 | 2020-11-05 | Analog Devices International Unlimited Company | Gegen elektrische Überlastung tolerante Mikrowellenverstärker |
| US11469717B2 (en) | 2019-05-03 | 2022-10-11 | Analog Devices International Unlimited Company | Microwave amplifiers tolerant to electrical overstress |
| CN119855223A (zh) | 2019-09-09 | 2025-04-18 | 亚德诺半导体国际无限责任公司 | 配置用于栅极电介质监控的半导体器件 |
| US12032014B2 (en) | 2019-09-09 | 2024-07-09 | Analog Devices International Unlimited Company | Semiconductor device configured for gate dielectric monitoring |
| US11552190B2 (en) | 2019-12-12 | 2023-01-10 | Analog Devices International Unlimited Company | High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region |
| US11595036B2 (en) | 2020-04-30 | 2023-02-28 | Analog Devices, Inc. | FinFET thyristors for protecting high-speed communication interfaces |
| US11499995B2 (en) | 2020-10-26 | 2022-11-15 | Analog Devices, Inc. | Leakage compensation technique for current sensor |
| US12174773B2 (en) * | 2021-01-28 | 2024-12-24 | Realtek Semiconductor Corp. | Transmission control architecture between sensing device and host device |
| DE102023101916B4 (de) * | 2023-01-26 | 2024-10-10 | Tdk-Micronas Gmbh | Halbleiterchip mit einer integrierten Schaltung |
| US12477836B2 (en) | 2023-12-08 | 2025-11-18 | Analog Devices, Inc. | Low capacitance silicon controlled rectifier topology for overvoltage protection |
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| US3521087A (en) | 1969-05-16 | 1970-07-21 | Spacelabs Inc | Current limiting circuit |
| US5170310A (en) * | 1990-11-29 | 1992-12-08 | Square D Company | Fail-resistant solid state interruption system |
| US5455732A (en) * | 1993-09-15 | 1995-10-03 | National Semiconductor Corporation | Buffer protection against output-node voltage excursions |
| US5831061A (en) * | 1996-01-03 | 1998-11-03 | The Regents Of The University Of California | Nucleic acid encoding ecdysis-triggering hormone |
| US5838146A (en) * | 1996-11-12 | 1998-11-17 | Analog Devices, Inc. | Method and apparatus for providing ESD/EOS protection for IC power supply pins |
| JP2002187584A (ja) * | 2000-12-22 | 2002-07-02 | Shimano Inc | 自転車用電動ユニットの駆動制御回路 |
| JP4319413B2 (ja) * | 2001-04-11 | 2009-08-26 | エヌエックスピー ビー ヴィ | 演算増幅器の高デューティサイクルオフセット補償 |
| AUPS045702A0 (en) | 2002-02-12 | 2002-03-07 | Fultech Pty Ltd | A protection device |
| US6897730B2 (en) | 2003-03-04 | 2005-05-24 | Silicon Laboratories Inc. | Method and apparatus for controlling the output power of a power amplifier |
| JP2004304052A (ja) * | 2003-03-31 | 2004-10-28 | Denso Corp | 半導体装置 |
| JP4421849B2 (ja) | 2003-07-22 | 2010-02-24 | 株式会社デンソー | 入力保護回路 |
| JP2007503108A (ja) | 2003-08-21 | 2007-02-15 | フルテック プロプリエタリー リミテッド | 集積化電子切断回路、方法およびシステム |
| KR100609266B1 (ko) | 2003-11-03 | 2006-08-04 | 삼성전자주식회사 | 폴트 감지 방법 및 이를 수행하기 위한 회로, 폴트에 따른파워앰프 회로 보호 방법 및 폴트를 감지하는 파워 앰프 |
| JP2006053898A (ja) * | 2004-07-15 | 2006-02-23 | Rohm Co Ltd | 過電流保護回路およびそれを利用した電圧生成回路ならびに電子機器 |
| WO2006053314A2 (en) | 2004-11-09 | 2006-05-18 | Fultec Semiconductor, Inc. | Apparatus and method for high-voltage transient blocking using low-voltage elements |
| US20060098373A1 (en) | 2004-11-09 | 2006-05-11 | Fultec Semiconductors, Inc. | Intelligent transient blocking unit |
| US7342433B2 (en) | 2004-11-09 | 2008-03-11 | Fultec Semiconductor, Inc. | Apparatus and method for enhanced transient blocking |
| US20060098363A1 (en) | 2004-11-09 | 2006-05-11 | Fultec Semiconductors, Inc. | Integrated transient blocking unit compatible with very high voltages |
| US7492566B2 (en) | 2005-01-14 | 2009-02-17 | Bourns, Inc. | Low resistance transient blocking unit |
| DE102005003682A1 (de) * | 2005-01-26 | 2006-08-24 | Siemens Ag | Schutzschaltung in einem Stromversorgungseingang einer elektrischen Einrichtung und Verwendung einer Schutzschaltung |
| US7375942B1 (en) | 2005-02-10 | 2008-05-20 | Fultec Semiconductor, Inc. | Flexible secondary overcurrent protection |
| US7576962B2 (en) | 2005-06-16 | 2009-08-18 | Bourns, Inc. | Transient blocking apparatus with reset |
| DE102007036618A1 (de) * | 2007-08-02 | 2009-02-05 | Dspace Digital Signal Processing And Control Engineering Gmbh | Schaltungsanordnung zum Schutz von elektronischen Bauteilen oder Baugruppen |
| US8018699B2 (en) * | 2007-10-26 | 2011-09-13 | Caterpillar Inc. | Over voltage protection for reduced level electrical signal interfaces |
| US8009395B2 (en) * | 2007-11-07 | 2011-08-30 | Texas Instruments Incorporated | Methods and apparatus for over-voltage protection of device inputs |
| US8416549B2 (en) * | 2008-03-13 | 2013-04-09 | Semiconductor Components Industries, Llc | Method for providing over-voltage protection and circuit therefor |
| US8004802B2 (en) | 2008-11-19 | 2011-08-23 | Eaton Corporation | Operational amplifier circuit and arc fault circuit interrupter including the same |
| KR101581723B1 (ko) | 2008-12-26 | 2015-12-31 | 주식회사 동부하이텍 | 액정 패널 소스 드라이버를 위한 앰프 출력 보호회로 및 이의 동작 방법 |
| JP5451094B2 (ja) * | 2009-02-02 | 2014-03-26 | スパンション エルエルシー | 充電回路、充電装置、電子機器及び充電方法 |
| US8487705B2 (en) * | 2010-05-26 | 2013-07-16 | Triquint Semiconductor, Inc. | Protection circuit for radio frequency power amplifier |
| US8570697B2 (en) * | 2011-09-12 | 2013-10-29 | Honeywell International Inc. | Appartus and method for protecting signal and communication lines from very high voltage and transient pulses |
| US8867186B2 (en) * | 2012-09-27 | 2014-10-21 | Intersil Americas LLC | Low power analog switch circuits that provide over-voltage, under-voltage and power-off protection, and related methods and systems |
-
2012
- 2012-08-08 US US13/570,101 patent/US9088256B2/en active Active
-
2013
- 2013-07-30 JP JP2015526571A patent/JP5917775B2/ja active Active
- 2013-07-30 WO PCT/US2013/052711 patent/WO2014025574A1/en not_active Ceased
- 2013-07-30 KR KR1020157002780A patent/KR101726699B1/ko active Active
- 2013-08-01 DE DE102013108302.1A patent/DE102013108302B4/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| DE102013108302A1 (de) | 2014-02-13 |
| WO2014025574A1 (en) | 2014-02-13 |
| JP5917775B2 (ja) | 2016-05-18 |
| KR20150034752A (ko) | 2015-04-03 |
| US9088256B2 (en) | 2015-07-21 |
| DE102013108302B4 (de) | 2016-09-22 |
| US20140043715A1 (en) | 2014-02-13 |
| JP2015532034A (ja) | 2015-11-05 |
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