JP2015523735A5 - - Google Patents

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Publication number
JP2015523735A5
JP2015523735A5 JP2015521750A JP2015521750A JP2015523735A5 JP 2015523735 A5 JP2015523735 A5 JP 2015523735A5 JP 2015521750 A JP2015521750 A JP 2015521750A JP 2015521750 A JP2015521750 A JP 2015521750A JP 2015523735 A5 JP2015523735 A5 JP 2015523735A5
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JP
Japan
Prior art keywords
flow rate
adjusted
substrate
rpm
hydrogen peroxide
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JP2015521750A
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English (en)
Japanese (ja)
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JP6088052B2 (ja
JP2015523735A (ja
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Priority claimed from US13/670,381 external-priority patent/US9875916B2/en
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Publication of JP2015523735A publication Critical patent/JP2015523735A/ja
Publication of JP2015523735A5 publication Critical patent/JP2015523735A5/ja
Application granted granted Critical
Publication of JP6088052B2 publication Critical patent/JP6088052B2/ja
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JP2015521750A 2012-07-09 2013-07-09 枚葉式基板システムでフォトレジストを剥離する方法 Active JP6088052B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261669663P 2012-07-09 2012-07-09
US61/669,663 2012-07-09
US13/670,381 2012-11-06
US13/670,381 US9875916B2 (en) 2012-07-09 2012-11-06 Method of stripping photoresist on a single substrate system
PCT/US2013/049760 WO2014011657A2 (en) 2012-07-09 2013-07-09 Method of stripping photoresist on a single substrate system

Publications (3)

Publication Number Publication Date
JP2015523735A JP2015523735A (ja) 2015-08-13
JP2015523735A5 true JP2015523735A5 (cg-RX-API-DMAC7.html) 2016-04-14
JP6088052B2 JP6088052B2 (ja) 2017-03-01

Family

ID=48808543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015521750A Active JP6088052B2 (ja) 2012-07-09 2013-07-09 枚葉式基板システムでフォトレジストを剥離する方法

Country Status (4)

Country Link
US (1) US9875916B2 (cg-RX-API-DMAC7.html)
JP (1) JP6088052B2 (cg-RX-API-DMAC7.html)
KR (1) KR101695111B1 (cg-RX-API-DMAC7.html)
WO (1) WO2014011657A2 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6222817B2 (ja) * 2013-09-10 2017-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US10464107B2 (en) * 2013-10-24 2019-11-05 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
CN107211274B (zh) * 2015-08-24 2020-11-03 华为技术有限公司 一种设备关联方法以及相关设备
TWI629720B (zh) 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
US9741585B1 (en) * 2016-04-12 2017-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Reactive radical treatment for polymer removal and workpiece cleaning
JP7421410B2 (ja) * 2020-04-30 2024-01-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、学習用データの生成方法、学習方法、学習装置、学習済モデルの生成方法、および、学習済モデル

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US5269850A (en) * 1989-12-20 1993-12-14 Hughes Aircraft Company Method of removing organic flux using peroxide composition
KR100434485B1 (ko) * 1999-10-08 2004-06-05 삼성전자주식회사 포토레지스트 스트립퍼 조성물 및 이를 이용한 포토레지스트 스트립 방법
JP2001118850A (ja) * 1999-10-18 2001-04-27 Nec Corp 半導体装置の製造方法
US6503693B1 (en) * 1999-12-02 2003-01-07 Axcelis Technologies, Inc. UV assisted chemical modification of photoresist
JP2001196348A (ja) * 2000-01-12 2001-07-19 Seiko Epson Corp 有機物の分解方法、および半導体素子の製造方法
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
JP3914842B2 (ja) * 2001-10-23 2007-05-16 有限会社ユーエムエス 有機被膜の除去方法および除去装置
US7374696B2 (en) * 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
US20040244818A1 (en) * 2003-05-13 2004-12-09 Fury Michael A. System and method for cleaning of workpieces using supercritical carbon dioxide
TWI377453B (en) * 2003-07-31 2012-11-21 Akrion Technologies Inc Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing
US8530359B2 (en) * 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
JP2005183937A (ja) 2003-11-25 2005-07-07 Nec Electronics Corp 半導体装置の製造方法およびレジスト除去用洗浄装置
JP4369325B2 (ja) 2003-12-26 2009-11-18 東京エレクトロン株式会社 現像装置及び現像処理方法
JP4439956B2 (ja) * 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
US20110061679A1 (en) * 2004-06-17 2011-03-17 Uvtech Systems, Inc. Photoreactive Removal of Ion Implanted Resist
JPWO2006051585A1 (ja) * 2004-11-10 2008-05-29 三益半導体工業株式会社 枚葉式ウェーハ処理装置
US7921859B2 (en) 2004-12-16 2011-04-12 Sematech, Inc. Method and apparatus for an in-situ ultraviolet cleaning tool
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
WO2007062111A1 (en) 2005-11-23 2007-05-31 Fsi International, Inc. Process for removing material from substrates
DE102006062035B4 (de) 2006-12-29 2013-02-07 Advanced Micro Devices, Inc. Verfahren zum Entfernen von Lackmaterial nach einer Implantation mit hoher Dosis in einem Halbleiterbauelement
JP5014811B2 (ja) * 2007-01-22 2012-08-29 東京エレクトロン株式会社 基板の処理方法
JP2009170554A (ja) 2008-01-11 2009-07-30 Panasonic Corp 半導体装置の製造方法
US20110226280A1 (en) 2008-11-21 2011-09-22 Axcelis Technologies, Inc. Plasma mediated ashing processes
KR20100067814A (ko) * 2008-12-12 2010-06-22 삼성전자주식회사 표시 기판 및 이의 제조 방법
EP2226834B1 (en) * 2009-03-06 2020-04-29 IMEC vzw Method for physical force assisted cleaning with reduced damage
JP2011228438A (ja) * 2010-04-19 2011-11-10 Panasonic Corp 基板洗浄方法及び基板洗浄装置
KR101665036B1 (ko) * 2010-04-27 2016-10-24 티이엘 에프에스아이, 인코포레이티드 기판 표면 근방의 유체 혼합을 제어하는 마이크로전자 기판의 습식 처리
US8772170B2 (en) * 2010-09-01 2014-07-08 Arizona Board Of Regents On Behalf Of The University Of Arizona Enhanced stripping of implanted resists
US9257292B2 (en) 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing

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