JP2015522217A - キャビティ内コンタクトを有するvcsel - Google Patents
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- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
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- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
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- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18347—Mesa comprising active layer
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
2 DBRのAlAs層
3 DBRのGaAs層
4 底部DBR
5 n電流注入層
6 活性領域
7 電流絞り用のAlAs層
8 p電流注入層
9 エッチングストッパ層
10 頂部DBR
11 pコンタクト
12 nコンタクト
13 発光領域
14 エッチングされていないバー(架け橋部)
15 VCSEL
16 銅めっき
17 パッシベーション層
18 VCSEL層構造
19 レジスト
20 pコンタクトリフトオフ用のレジスト
21 レジストマスク
22 ドライエッチング用のレジスト
23 DBRの酸化アルミニウム層
24 電流絞り
Claims (10)
- キャビティ内コンタクトを有する少なくとも1つの垂直キャビティ面発光レーザで形成されるレーザデバイスであって、
前記垂直キャビティ面発光レーザは、第1の分布ブラッグ反射器と第2の分布ブラッグ反射器との間の活性領域と、前記第1の分布ブラッグ反射器と前記活性領域との間の第1の導電型の第1の電流注入層と、前記第2の分布ブラッグ反射器と前記活性領域との間の第2の導電型の第2の電流注入層とを有する層構造を有し、
前記第1及び第2の電流注入層は、それぞれ、第1及び第2の金属コンタクトと接触し、
前記第1及び/又は第2の分布ブラッグ反射器は、0≦x≦0.3として、交互にされた酸化アルミニウム含有層及びAl(x)Ga(1−x)As含有層で形成されている、
レーザデバイス。 - 前記第1の電流注入層は、nドープされた半導体層であり、前記第2の電流注入層は、pドープされた半導体層である、請求項1に記載のレーザデバイス。
- 前記第1及び/又は第2の電流注入層のドーピング濃度は、前記第1の導電型の、複数の、より高濃度にドープされた領域を、より低濃度にドープされた領域又はドーピングのない領域の間に形成するよう、レーザの光軸の方向に変化し、前記より高濃度にドープされた領域は、レーザ動作中に前記第1の分布ブラッグ反射器と前記第2の分布ブラッグ反射器との間に形成する定在電界の最小の位置に配置される、請求項1に記載のレーザデバイス。
- 前記層構造はエピタキシャル成長され且つ基板上に配置されている、請求項1に記載のレーザデバイス。
- 複数の前記垂直キャビティ面発光レーザが、隣り合わせて前記基板上に配置され、且つ前記基板上で電気的に直接接続されている、請求項4に記載のレーザデバイス。
- 前記第1及び第2の金属コンタクトは、前記垂直キャビティ面発光レーザの各々の反対側に配置され、前記レーザの少なくともグループが、該グループの前記レーザの前記第1の金属コンタクトが、該グループのうちの隣接レーザの前記第2の金属コンタクトに面するように配置されている、請求項5に記載のレーザデバイス。
- 複数の前記垂直キャビティ面発光レーザが、隣り合わせて配置され、且つ前記レーザの出力結合側とは反対側に設けられたメタライゼーション構造に電気的に接続され、前記メタライゼーション構造は、基板なしで前記レーザを機械的に支持するのに好適な厚さを有するように設計されている、請求項1に記載のレーザデバイス。
- 前記メタライゼーション構造は、前記レーザに電気接触するためのコンタクトパッドを形成している、請求項7に記載のレーザデバイス。
- 前記第1及び第2の分布ブラッグ反射器の一方は、10対未満の酸化アルミニウム含有層及びAl(x)Ga(1−x)As含有層を有し、前記第1及び第2の分布ブラッグ反射器の他方は、5対未満の酸化アルミニウム含有層及びAl(x)Ga(1−x)As含有層を有する、請求項1に記載のレーザデバイス。
- キャビティ内コンタクトを有する少なくとも1つの垂直キャビティ面発光レーザで形成されるレーザデバイスであって、
前記垂直キャビティ面発光レーザは、半導体基板上の上部ミラーと下部ミラーとの間の活性領域と、前記上部ミラーと前記活性領域との間の電流注入層とを有する層構造を有し、
前記電流注入層は金属コンタクトと接触し、
前記上部ミラーは、0≦x≦0.3として、交互にされた酸化アルミニウム含有層及びAl(x)Ga(1−x)As含有層で形成された分布ブラッグ反射器である、
レーザデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261670167P | 2012-07-11 | 2012-07-11 | |
US61/670,167 | 2012-07-11 | ||
PCT/IB2013/055381 WO2014009843A1 (en) | 2012-07-11 | 2013-07-01 | Vcsel with intracavity contacts |
Publications (2)
Publication Number | Publication Date |
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JP2015522217A true JP2015522217A (ja) | 2015-08-03 |
JP6216785B2 JP6216785B2 (ja) | 2017-10-18 |
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JP2015521100A Active JP6216785B2 (ja) | 2012-07-11 | 2013-07-01 | キャビティ内コンタクトを有するvcsel |
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Country | Link |
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US (1) | US9627854B2 (ja) |
EP (1) | EP2873124B1 (ja) |
JP (1) | JP6216785B2 (ja) |
CN (1) | CN104488148B (ja) |
BR (1) | BR112015000331A2 (ja) |
RU (1) | RU2633643C2 (ja) |
WO (1) | WO2014009843A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US11271367B1 (en) * | 2014-12-05 | 2022-03-08 | Ii-Vi Delaware, Inc. | Method to form a self-aligned evaporated metal contact in a deep hole and VCSEL with such contact |
KR20180015630A (ko) * | 2015-06-09 | 2018-02-13 | 코닌클리케 필립스 엔.브이. | 수직 공동 표면 방사 레이저 |
EP3514898A1 (en) * | 2018-01-19 | 2019-07-24 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser device with integrated photodiode |
WO2019217444A1 (en) * | 2018-05-08 | 2019-11-14 | The Regents Of The University Of California | Air cavity dominant vcsels with a wide wavelength sweep |
CN110011181A (zh) * | 2019-05-24 | 2019-07-12 | 苏州长瑞光电有限公司 | 晶体管垂直腔面发射激光器及其制备方法 |
CN110148885B (zh) * | 2019-06-13 | 2024-05-03 | 海南师范大学 | 一种水平空气柱电流注入孔径结构的垂直腔面发射激光器 |
EP3883073B1 (en) | 2020-03-20 | 2022-09-07 | TRUMPF Photonic Components GmbH | Method of forming an electrical metal contact and method of producing a vertical cavity surface emitting laser |
US11876348B2 (en) | 2020-09-25 | 2024-01-16 | Apple Inc. | Trench process for dense VCSEL design |
CN113206446A (zh) * | 2021-04-30 | 2021-08-03 | 厦门大学 | 基于导电氧化物dbr的氮化物垂直腔面发射激光器的制作方法 |
CN114204415B (zh) * | 2021-11-16 | 2023-11-28 | 深圳市嘉敏利光电有限公司 | 一种vcsel结构 |
DE102022120161A1 (de) | 2022-08-10 | 2024-02-15 | Ams-Osram International Gmbh | Optoelektronisches halbleiterbauelement mit epitaktisch gewachsener schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
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2013
- 2013-07-01 CN CN201380036911.3A patent/CN104488148B/zh active Active
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RU2633643C2 (ru) | 2017-10-16 |
US9627854B2 (en) | 2017-04-18 |
CN104488148A (zh) | 2015-04-01 |
EP2873124A1 (en) | 2015-05-20 |
RU2015104345A (ru) | 2016-08-27 |
WO2014009843A1 (en) | 2014-01-16 |
JP6216785B2 (ja) | 2017-10-18 |
CN104488148B (zh) | 2018-06-22 |
BR112015000331A2 (pt) | 2017-06-27 |
US20150139260A1 (en) | 2015-05-21 |
EP2873124B1 (en) | 2017-04-05 |
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