JP2015519848A5 - - Google Patents
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- Publication number
- JP2015519848A5 JP2015519848A5 JP2015515251A JP2015515251A JP2015519848A5 JP 2015519848 A5 JP2015519848 A5 JP 2015519848A5 JP 2015515251 A JP2015515251 A JP 2015515251A JP 2015515251 A JP2015515251 A JP 2015515251A JP 2015519848 A5 JP2015519848 A5 JP 2015519848A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- piezoelectric
- resonator
- integrated
- resonator device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/484,961 | 2012-05-31 | ||
| US13/484,961 US9240767B2 (en) | 2012-05-31 | 2012-05-31 | Temperature-controlled integrated piezoelectric resonator apparatus |
| PCT/US2013/043657 WO2013181562A1 (en) | 2012-05-31 | 2013-05-31 | Temperature-controlled integrated piezoelectric resonator |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015519848A JP2015519848A (ja) | 2015-07-09 |
| JP2015519848A5 true JP2015519848A5 (https=) | 2016-06-16 |
| JP6419069B2 JP6419069B2 (ja) | 2018-11-07 |
Family
ID=49669498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015515251A Active JP6419069B2 (ja) | 2012-05-31 | 2013-05-31 | 温度制御統合圧電性共振器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9240767B2 (https=) |
| JP (1) | JP6419069B2 (https=) |
| CN (1) | CN104321893B (https=) |
| WO (1) | WO2013181562A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI538395B (zh) * | 2014-05-07 | 2016-06-11 | 國立清華大學 | 主動式溫度補償共振器結構 |
| JP6256605B2 (ja) * | 2014-06-12 | 2018-01-10 | 株式会社村田製作所 | 圧電デバイス |
| US10778180B2 (en) * | 2015-12-10 | 2020-09-15 | Qorvo Us, Inc. | Bulk acoustic wave resonator with a modified outside stack portion |
| US9965930B1 (en) * | 2017-03-16 | 2018-05-08 | Apple Inc. | Electronic device including piezoelectric material layer and temperature compensation circuitry and related methods |
| JP6781271B2 (ja) * | 2017-09-22 | 2020-11-04 | 安徽安努奇科技有限公司Ａｎｈｕｉ Ａｎｕｋｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．， Ｌｔｄ． | 圧電共振器の製造方法と圧電共振器 |
| DE102017129160B3 (de) * | 2017-12-07 | 2019-01-31 | RF360 Europe GmbH | Elektroakustisches Resonatorbauelement und Verfahren zu dessen Herstellung |
| US11563419B1 (en) * | 2018-10-18 | 2023-01-24 | Hrl Laboratories, Llc | Piezoelectric resonator with multiple electrode sections |
| JP7434724B2 (ja) | 2019-05-23 | 2024-02-21 | セイコーエプソン株式会社 | 振動デバイス、電子機器および移動体 |
| TWI810698B (zh) * | 2019-06-12 | 2023-08-01 | 美商特拉華公司 | 電極界定未懸掛之聲波共振器 |
| CN111010115A (zh) * | 2019-08-09 | 2020-04-14 | 天津大学 | 体声波谐振器、滤波器和电子设备及控制谐振器温度的方法 |
| CN116263342B (zh) * | 2021-12-14 | 2026-01-13 | 苏州汉天下电子有限公司 | 一种体声波传感器及其制造方法 |
| WO2025249019A1 (ja) * | 2024-05-28 | 2025-12-04 | ローム株式会社 | 半導体装置、半導体装置の温度補償方法および半導体装置の検査方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62245811A (ja) * | 1986-04-18 | 1987-10-27 | Nippon Dempa Kogyo Co Ltd | 恒温型圧電振動子 |
| US5283458A (en) * | 1992-03-30 | 1994-02-01 | Trw Inc. | Temperature stable semiconductor bulk acoustic resonator |
| US5696423A (en) * | 1995-06-29 | 1997-12-09 | Motorola, Inc. | Temperature compenated resonator and method |
| US6060692A (en) * | 1998-09-02 | 2000-05-09 | Cts Corporation | Low power compact heater for piezoelectric device |
| JP3801083B2 (ja) * | 2001-06-06 | 2006-07-26 | 株式会社村田製作所 | 弾性表面波装置 |
| DE10251876B4 (de) * | 2002-11-07 | 2008-08-21 | Infineon Technologies Ag | BAW-Resonator mit akustischem Reflektor und Filterschaltung |
| KR100502569B1 (ko) | 2003-04-15 | 2005-07-20 | 박희대 | 선택형 블라그 반사층을 이용한 fbar 필터 |
| FR2857785B1 (fr) * | 2003-07-17 | 2005-10-21 | Commissariat Energie Atomique | Resonateur acoustique de volume a frequence de resonance ajustee et procede de realisation |
| US7358831B2 (en) * | 2003-10-30 | 2008-04-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with simplified packaging |
| US7362198B2 (en) | 2003-10-30 | 2008-04-22 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd | Pass bandwidth control in decoupled stacked bulk acoustic resonator devices |
| DE102005043039B4 (de) * | 2005-09-09 | 2008-10-30 | Siemens Ag | Vorrichtung mit piezoakustischem Resonatorelement, Verfahren zu dessen Herstellung und Verfahren zur Ausgabe eines Signals in Abhängigkeit einer Resonanzfrequenz |
| DE102005043037B4 (de) | 2005-09-09 | 2009-04-09 | Siemens Ag | Vorrichtung mit piezoakustischem Resonatorelement, Verfahren zu dessen Herstellung und Verfahren zur Ausgabe eines Signals in Abhängigkeit einer Resonanzfrequenz |
| US7463118B2 (en) * | 2006-06-09 | 2008-12-09 | Texas Instruments Incorporated | Piezoelectric resonator with an efficient all-dielectric Bragg reflector |
| US7898365B2 (en) * | 2006-09-06 | 2011-03-01 | Raytheon Company | Integrated saw device heater |
| US7385334B1 (en) * | 2006-11-20 | 2008-06-10 | Sandia Corporation | Contour mode resonators with acoustic reflectors |
| JP4978210B2 (ja) * | 2007-01-25 | 2012-07-18 | セイコーエプソン株式会社 | バルク音響振動子の製造方法 |
| KR101155989B1 (ko) * | 2007-06-21 | 2012-06-18 | 삼성전자주식회사 | 잉크젯 프린트헤드의 제조방법 |
| ATE534191T1 (de) * | 2009-03-09 | 2011-12-15 | Micro Crystal Ag | Oszillatorvorrichtung, die einen wärmegesteuerten piezoeletrischen quarz umfasst |
| US9608589B2 (en) | 2010-10-26 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of forming acoustic resonator using intervening seed layer |
-
2012
- 2012-05-31 US US13/484,961 patent/US9240767B2/en active Active
-
2013
- 2013-05-31 CN CN201380025923.6A patent/CN104321893B/zh active Active
- 2013-05-31 WO PCT/US2013/043657 patent/WO2013181562A1/en not_active Ceased
- 2013-05-31 JP JP2015515251A patent/JP6419069B2/ja active Active
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